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    • 4. 发明授权
    • Radar detector having function of hands-free device
    • 雷达探测器具有免提装置功能
    • US07440779B2
    • 2008-10-21
    • US11299770
    • 2005-12-13
    • Dong Chul KimJeong Hun KimYoung Jip KimJong Yeon KimJung Hyun Kim
    • Dong Chul KimJeong Hun KimYoung Jip KimJong Yeon KimJung Hyun Kim
    • H04M1/00
    • H04M1/6075G01S7/021H04B1/3877
    • A radar detector enabling hands-free communication over a mobile phone by connecting the mobile phone to the radar detector. The radar detector includes a horn antenna; a signal-processing unit (SPU) for detecting a signal received by the horn antenna; a laser module for receiving a laser signal; a central processing unit (CPU) for controlling the SPU; a pulse delay unit for delaying or sustaining a CPU pulse; a sweep voltage generator unit for driving the SPU; a warning unit for warning the detected signal; an audio amplifier controller connected to the CPU and the warning unit to amplify an audio signal; and a connecting unit installed to connect the audio amplifier controller with a mobile phone. The connecting unit includes a microphone, a switch for reception of a signal from the mobile phone, and a connection portion for connection to the mobile phone.
    • 一种雷达检测器,通过将移动电话连接到雷达探测器,实现手机上的免提通信。 雷达检测器包括喇叭天线; 用于检测由喇叭天线接收的信号的信号处理单元(SPU); 用于接收激光信号的激光模块; 用于控制SPU的中央处理单元(CPU); 用于延迟或维持CPU脉冲的脉冲延迟单元; 用于驱动SPU的扫描电压发生器单元; 用于警告所检测到的信号的警告单元; 音频放大器控制器,连接到CPU和警告单元以放大音频信号; 以及安装用于将音频放大器控制器与移动电话连接的连接单元。 连接单元包括麦克风,用于接收来自移动电话的信号的开关,以及用于连接到移动电话的连接部分。
    • 9. 发明授权
    • Wafer cleaning method and wafer bonding method using the same
    • 晶片清洗方法及使用其的晶片接合方法
    • US08278186B2
    • 2012-10-02
    • US12602285
    • 2007-10-31
    • Yong Won ChaDong Chul Kim
    • Yong Won ChaDong Chul Kim
    • H01L21/30
    • H01L21/02052H01L21/02046H01L21/02054H01L21/0206H01L21/187H01L21/76251
    • The present invention relates to a wafer cleaning and a wafer bonding method using the same that can improve a yield of cleaning process and bonding property in bonding the cleaned wafer by cleaning the wafer using atmospheric pressure plasma and cleaning solution. The wafer cleaning method includes the steps of providing a process chamber with a wafer whose bonding surface faces upward, cleaning and surface-treating the bonding surface of the wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the wafer, and withdrawing out the wafer from the process chamber. The wafer bonding method includes the steps of: providing a first process chamber with a first wafer whose bonding surface faces upward; cleaning and surface-treating the bonding surface of the first wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the first wafer; withdrawing out the first wafer from the first process chamber and providing a second process chamber with the first wafer; providing a third process chamber with a second wafer whose bonding surface faces upward; cleaning and surface-treating the bonding surface of the second wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the second wafer; withdrawing out the second wafer from the third process chamber and providing the second process chamber with the second wafer whose bonding surface faces to the bonding surface of the first wafer and bonding the bonding surfaces of the first and second wafers to each other.
    • 本发明涉及使用这种方法的晶片清洗和晶片接合方法,其可以通过使用大气压等离子体和清洁溶液清洁晶片来提高清洁工艺的产率和粘合清洁晶片的接合性能。 晶片清洗方法包括以下步骤:向处理室提供接合面朝上的晶片,通过向晶片的接合表面供给大气压等离子体和清洗溶液来清洁和表面处理晶片的接合表面;以及 从处理室中取出晶片。 晶片接合方法包括以下步骤:向第一处理室提供接合面朝上的第一晶片; 通过向第一晶片的接合表面供应大气压等离子体和清洁溶液来清洁和表面处理第一晶片的接合表面; 从第一处理室中取出第一晶片并且提供具有第一晶片的第二处理室; 提供具有接合表面朝上的第二晶片的第三处理室; 通过向第二晶片的接合表面供应大气压等离子体和清洁溶液来清洁和表面处理第二晶片的结合表面; 从第三处理室中取出第二晶片,并向第二处理室提供第二晶片,其第二晶片的键合表面面向第一晶片的结合表面,并将第一和第二晶片的结合表面彼此结合。