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1. 发明授权

US06888223B2 Use of photoresist in substrate vias during backside grind 失效
标题翻译：在背面研磨过程中在基板通孔中使用光致抗蚀剂
公开(公告)号：US06888223B2
公开(公告)日：2005-05-03
申请号：US10405763
申请日：2003-04-01
申请人： Donald W. Brouillette , Joseph D. Danaher , Timothy C. Krywanczyk , Amye L. Wells
发明人： Donald W. Brouillette , Joseph D. Danaher , Timothy C. Krywanczyk , Amye L. Wells
IPC分类号： H01L21/768 , H01L23/048
CPC分类号： H01L21/76898
摘要： A structure and method of formation. The substrate has front and back surfaces on opposite sides of the substrate. The substrate has a backside portion extending from the back surface to a second depth into the substrate as measured from the front surface. At least one via is formed in the substrate and extends from the front surface to a via depth into the substrate. The via depth is specific to each via. The via depth of each via is less than an initial thickness of the substrate. The second depth does not exceed the minimum via depth of the via depths. Organic material (e.g., photoresist) is inserted into each via. The organic material is subsequently covered with a tape, followed by removal of the backside portion of the substrate. The tape is subsequently removed from the organic material, followed by removal of the organic material from each via.
摘要翻译：一种结构和形成方法。衬底在衬底的相对侧上具有前表面和后表面。衬底具有从前表面测量的从后表面延伸到衬底的第二深度的背侧部分。在衬底中形成至少一个通孔，并从前表面延伸到通孔深度进入衬底。通孔深度特定于每个通孔。每个通孔的通孔深度小于衬底的初始厚度。第二深度不超过通孔深度的最小值。将有机材料（例如光致抗蚀剂）插入每个通孔中。随后用带覆盖有机材料，随后除去基材的背面部分。随后从有机材料中取出胶带，然后从每个通孔中除去有机材料。

2. 发明授权

US07074715B2 Use of photoresist in substrate vias during backside grind 失效
标题翻译：在背面研磨过程中在基板通孔中使用光致抗蚀剂
公开(公告)号：US07074715B2
公开(公告)日：2006-07-11
申请号：US10989059
申请日：2004-11-15
申请人： Donald W. Brouillette , Joseph D. Danaher , Timothy C. Krywanczyk , Amye L. Wells
发明人： Donald W. Brouillette , Joseph D. Danaher , Timothy C. Krywanczyk , Amye L. Wells
IPC分类号： H01L21/4763
CPC分类号： H01L21/76898
摘要： A structure and method of formation. The substrate has front and back surfaces on opposite sides of the substrate. The substrate has a backside portion extending from the back surface to a second depth into the substrate as measured from the front surface. At least one via is formed in the substrate and extends from the front surface to a via depth into the substrate. The via depth is specific to each via. The via depth of each via is less than an initial thickness of the substrate. The second depth does not exceed the minimum via depth of the via depths. Organic material (e.g., photoresist) is inserted into each via. The organic material is subsequently covered with a tape, followed by removal of the backside portion of the substrate. The tape is subsequently removed from the organic material, followed by removal of the organic material from each via.
摘要翻译：一种结构和形成方法。衬底在衬底的相对侧上具有前表面和后表面。衬底具有从前表面测量的从后表面延伸到衬底的第二深度的背侧部分。在衬底中形成至少一个通孔，并从前表面延伸到通孔深度进入衬底。通孔深度特定于每个通孔。每个通孔的通孔深度小于衬底的初始厚度。第二深度不超过通孔深度的最小值。将有机材料（例如光致抗蚀剂）插入每个通孔中。随后用带覆盖有机材料，随后除去基材的背面部分。随后从有机材料中取出胶带，然后从每个通孔中除去有机材料。

3. 发明授权

US06455434B1 Prevention of slurry build-up within wafer topography during polishing 失效
标题翻译：在抛光期间防止晶片形貌中的浆料积聚
公开(公告)号：US06455434B1
公开(公告)日：2002-09-24
申请号：US10001562
申请日：2001-10-23
申请人： Chad R. Binkerd , Jose L. Cruz , Timothy C. Krywanczyk , Brian D. Pfeifer , Rosemary A. Previti-Kelly , Patricia Schink , Amye L. Wells
发明人： Chad R. Binkerd , Jose L. Cruz , Timothy C. Krywanczyk , Brian D. Pfeifer , Rosemary A. Previti-Kelly , Patricia Schink , Amye L. Wells
IPC分类号： H01L21302
CPC分类号： H01L23/544 , H01L21/3212 , H01L2223/54473 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method of preventing the build-up of polishing material within low areas of a substrate during polishing. Following the blanket deposition of a first layer, a selectively removable material is deposited over the first layer, wherein the selectively removable material fills the low areas. A surface of the substrate is polished removing the excess first layer and selectively removable material from the surface, leaving the first layer and selectively removable material within the low area. Following polishing, the selectively removable material is removed from the low areas prior to the deposition of a second layer.
摘要翻译：本发明提供了一种在抛光期间防止抛光材料在衬底的低区域内积聚的方法。在第一层的覆盖沉积之后，在第一层上沉积可选择性地移除的材料，其中可选择性地移除的材料填充低的区域。研磨基材的表面，从表面除去多余的第一层和选择性地除去的材料，留下第一层和选择性地可移除的材料在低区域内。在抛光之后，在沉积第二层之前，从低区域去除可选择性去除的材料。

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