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    • 1. 发明授权
    • Position sensor including a thin film indium arsenide magnetoresistor on
a permanent magnet
    • 位置传感器包括在永久磁铁上的薄膜砷化铟磁阻
    • US4939456A
    • 1990-07-03
    • US426249
    • 1989-10-25
    • Donald T. MorelliJoseph P. HeremansDale L. PartinChristopher M. ThrushLouis Green
    • Donald T. MorelliJoseph P. HeremansDale L. PartinChristopher M. ThrushLouis Green
    • G01D5/14G01D5/16
    • G01D5/147
    • For increased sensitivity, an improved position sensor includes a magnetic circuit in which the stationary portion includes a permanent magnet whose width is optimally 1.5 times the tooth pitch of the exciter portion of the sensor and the magnet face proximate the exciter includes a thin layer of ferromagnetic material over which is centered a narrow magnetic sensing element, such as a magnetoresistor. The sensing element has a width typically less than the tooth width. The sensing element includes a thin film of a monocrystalline semiconductive material, preferably having only a moderate bulk mobility and a larger band gap, such as indium arsenide. Current carriers flow along the length of the thin film in a surface accumulation layer, effective to provide a significant apparent increase in mobility and conductivity of said semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. The flux density is typically applied by appropriate magnet thickness or choice of magnet material without the need of a flux guide.
    • 为了提高灵敏度,改进的位置传感器包括一个磁路,其中固定部分包括永磁体,其宽度最好是传感器的激励器部分的齿距的1.5倍,并且靠近激励器的磁体面包括铁磁薄层 其上以诸如磁电阻器的窄磁感应元件为中心的材料。 感测元件具有通常小于齿宽度的宽度。 感测元件包括单晶半导体材料的薄膜,优选仅具有适度的体迁移率和较大的带隙,例如砷化铟。 电流载流子沿着表面积累层中的薄膜的长度流动,有效地提供所述半导体材料的迁移率和导电性的明显增加,并且磁敏感性和温度不敏感性的实际增加。 磁通密度通常通过适当的磁体厚度或磁体材料的选择来施加,而不需要助焊剂引导。