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1. 发明申请

US20130044532A1 LOW TEMPERATURE BEOL COMPATIBLE DIODE HAVING HIGH VOLTAGE MARGINS FOR USE IN LARGE ARRAYS OF ELECTRONIC COMPONENTS 有权
标题翻译：具有高电压容量的低温BEO兼容二极管用于大型电子元件阵列
公开(公告)号：US20130044532A1
公开(公告)日：2013-02-21
申请号：US13209569
申请日：2011-08-15
申请人： Donald S. Bethune , Kailash Gopalakrishnan , Andrew J. Kellock , Rohit S. Shenoy , Kumar R. Virwani
发明人： Donald S. Bethune , Kailash Gopalakrishnan , Andrew J. Kellock , Rohit S. Shenoy , Kumar R. Virwani
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L29/872 , G11C13/003 , G11C2029/5002 , G11C2029/5006 , G11C2213/72 , H01L27/1021 , H01L27/224 , H01L27/2427 , H01L45/141 , H01L45/1616
摘要： A crystalline semiconductor Schottky barrier-like diode sandwiched between two conducting electrodes is in series with a memory element, a word line and a bit line, wherein the setup provides voltage margins greater than 1V and current densities greater than 5×106 A/cm2. This Schottky barrier-like diode can be fabricated under conditions compatible with low-temperature BEOL semiconductor processing, can supply high currents at low voltages, exhibits high on-off ratios, and enables large memory arrays.
摘要翻译：夹在两个导电电极之间的晶体半导体肖特基势垒状二极管与存储元件，字线和位线串联，其中，该设置提供大于1V的电压裕度和大于5×106A / cm 2的电流密度。这种肖特基势垒状二极管可以在与低温BEOL半导体处理兼容的条件下制造，可以在低电压下提供高电流，具有高开关比，并且可以实现大型存储器阵列。

2. 发明授权

US08830725B2 Low temperature BEOL compatible diode having high voltage margins for use in large arrays of electronic components 有权
标题翻译：低温BEOL兼容二极管具有高电压裕度，可用于大型电子元件阵列
公开(公告)号：US08830725B2
公开(公告)日：2014-09-09
申请号：US13209569
申请日：2011-08-15
申请人： Donald S Bethune , Kailash Gopalakrishnan , Andrew J Kellock , Rohit S Shenoy , Kumar R Virwani
发明人： Donald S Bethune , Kailash Gopalakrishnan , Andrew J Kellock , Rohit S Shenoy , Kumar R Virwani
IPC分类号： G11C11/00
CPC分类号： H01L29/872 , G11C13/003 , G11C2029/5002 , G11C2029/5006 , G11C2213/72 , H01L27/1021 , H01L27/224 , H01L27/2427 , H01L45/141 , H01L45/1616
摘要： A crystalline semiconductor Schottky barrier-like diode sandwiched between two conducting electrodes is in series with a memory element, a word line and a bit line, wherein the setup provides voltage margins greater than 1V and current densities greater than 5×106 A/cm2. This Schottky barrier-like diode can be fabricated under conditions compatible with low-temperature BEOL semiconductor processing, can supply high currents at low voltages, exhibits high on-off ratios, and enables large memory arrays.
摘要翻译：夹在两个导电电极之间的晶体半导体肖特基势垒状二极管与存储元件，字线和位线串联，其中，该设置提供大于1V的电压裕度和大于5×106A / cm 2的电流密度。这种肖特基势垒状二极管可以在与低温BEOL半导体处理兼容的条件下制造，可以在低电压下提供高电流，具有高开关比，并且可以实现大型存储器阵列。

3. 发明授权

US09812638B2 Backend of line (BEOL) compatible high current density access device for high density arrays of electronic components 有权
公开(公告)号：US09812638B2
公开(公告)日：2017-11-07
申请号：US12727746
申请日：2010-03-19
申请人： Donald S Bethune , Kailash Gopalakrishnan , Andrew J Kellock , Rohit S Shenoy
发明人： Donald S Bethune , Kailash Gopalakrishnan , Andrew J Kellock , Rohit S Shenoy
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/00 , H01L27/2409 , H01L45/06 , H01L45/1233
摘要： A device has a M8XY6 layer in between a first conductive layer on the top and a second conductive layer on the bottom, wherein (i) M includes at least one element selected from the following: Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element. Another device has MaXbYc material contacted on opposite sides by respective layers of conductive material, wherein: (i) M includes at least one element selected from the following: Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element, and a is in the range of 48-60 atomic percent, b is in the range of 4-10 atomic percent, c is in the range of 30-45 atomic percent, and a+b+c is at least 90 atomic percent.

4. 发明申请

US20110227023A1 BACKEND OF LINE (BEOL) COMPATIBLE HIGH CURRENT DENSITY ACCESS DEVICE FOR HIGH DENSITY ARRAYS OF ELECTRONIC COMPONENTS 有权
标题翻译：线（BEOL）的兼容高电流密度访问设备用于电子元件的高密度阵列
公开(公告)号：US20110227023A1
公开(公告)日：2011-09-22
申请号：US12727746
申请日：2010-03-19
申请人： Donald S. Bethune , Kailash Gopalakrishnan , Andrew J. Kellock , Rohit S. Shenoy
发明人： Donald S. Bethune , Kailash Gopalakrishnan , Andrew J. Kellock , Rohit S. Shenoy
IPC分类号： H01L45/00
CPC分类号： H01L45/00 , H01L27/2409 , H01L45/06 , H01L45/1233
摘要： A device is disclosed having a M8XY6 layer sandwiched in between a first conductive layer on the top and a second conductive layer on the bottom, wherein (i) M includes at least one element selected from the group consisting of Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element. Also disclosed is a device comprising: an MaXbYc material contacted on opposite sides by respective layers of conductive material, wherein: (i) M includes at least one element selected from the group consisting of Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element, and wherein a is in the range of 48-60 atomic percent, b is in the range of 4-10 atomic percent, c is in the range of 30-45 atomic percent, and a+b+c is at least 90 atomic percent.
摘要翻译：公开了一种器件，其具有夹在顶部的第一导电层和底部的第二导电层之间的M8XY6层，其中（i）M包括选自由Cu，Ag，Li和 Zn，（ii）X包括至少一种XIV族，和（iii）Y包括至少一个XVI族。还公开了一种装置，包括：MaXbYc材料，在相对侧通过相应的导电材料层接触，其中：（i）M包括选自由Cu，Ag，Li和Zn组成的组中的至少一种元素，（ii） X包括至少一个第XIV族元素，和（iii）Y包括至少一个第ⅩⅥ族元素，并且其中a在48-60原子百分比的范围内，b在4-10原子百分比的范围内，c是在30-45原子％的范围内，a + b + c为至少90原子％。

5. 发明授权

US08811060B2 Non-volatile memory crosspoint repair 有权
标题翻译：非易失性存储器交叉点修复
公开(公告)号：US08811060B2
公开(公告)日：2014-08-19
申请号：US13485748
申请日：2012-05-31
申请人： Geoffrey W. Burr , Rohit S. Shenoy , Kailash Gopalakrishnan
发明人： Geoffrey W. Burr , Rohit S. Shenoy , Kailash Gopalakrishnan
IPC分类号： G11C11/00 , G11C13/00
CPC分类号： G11C13/0069 , G11C13/0002 , G11C13/0004 , G11C13/003 , G11C17/165
摘要： A device for use with a memory cross-point array of elements, each of which comprises a selection device in series with a state-holding device, in one embodiment includes a controller, configured to apply at least one voltage and/or current pulse to a selected one or more of the elements, said selected one or more of the elements including a partially- or completely-shorted selection device, so that said partially- or completely-shorted selection device passes enough current so as to damage its corresponding state-holding device and place said corresponding state-holding device in a highly resistive state, while any other selection device that is not partially- or completely-shorted passes less current so that the state-holding device corresponding to said other selection device remains unaffected. Additional systems and methods are also presented.
摘要翻译：一种与存储器交叉点阵列元件一起使用的装置，每个元件包括与状态保持装置串联的选择装置，在一个实施例中包括控制器，被配置为将至少一个电压和/或电流脉冲施加到所选择的一个或多个元件，所述选定的一个或多个元件包括部分或完全短路的选择装置，使得所述部分或完全短路的选择装置通过足够的电流，以便损坏其对应的状态 - 并且将所述对应的状态保持装置置于高电阻状态，而没有部分或全部短路的任何其他选择装置通过较少电流，使得与所述其他选择装置对应的状态保持装置保持不受影响。还介绍了其他系统和方法。

6. 发明申请

US20080314738A1 Electrolytic Device Based on a Solution-Processed Electrolyte 审中-公开
标题翻译：基于溶液处理电解质的电解装置
公开(公告)号：US20080314738A1
公开(公告)日：2008-12-25
申请号：US11765142
申请日：2007-06-19
申请人： Kailash Gopalakrishnan , David B. Mitzi , Rohit S. Shenoy
发明人： Kailash Gopalakrishnan , David B. Mitzi , Rohit S. Shenoy
IPC分类号： C25B9/06 , B05D5/12 , H01L21/64
CPC分类号： H01L45/142 , C23C18/1204 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/1608
摘要： The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.
摘要翻译：本公开内容涉及包含非晶态硫族化物固体活性电解质层的固体电解质装置; 第一和第二金属层。无定形硫族化物固体活性电解质层位于第一和第二金属层之间。无定形硫族化物固体活性电解质层是通过将金属硫属元素化合物的肼类前体溶液获得的，将溶液施加到基底上; 然后使前体退火以将前体转化为无定形金属硫族化物。本公开还涉及制造固体电解质器件的方法。

7. 发明授权

US07928419B2 Electrolytic device based on a solution-processed electrolyte 有权
标题翻译：基于溶液处理电解质的电解装置
公开(公告)号：US07928419B2
公开(公告)日：2011-04-19
申请号：US11830213
申请日：2007-07-30
申请人： Kailash Gopalakrishnan , David B. Mitzi , Rohit S. Shenoy
发明人： Kailash Gopalakrishnan , David B. Mitzi , Rohit S. Shenoy
IPC分类号： H01L47/00 , B01D59/50 , C25C3/00 , C25C5/04 , C25C7/00 , G11C11/00 , B05D5/12
CPC分类号： H01L45/142 , C23C18/1204 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/1608
摘要： The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.
摘要翻译：本公开内容涉及包含非晶态硫族化物固体活性电解质层的固体电解质装置; 第一和第二金属层。无定形硫族化物固体活性电解质层位于第一和第二金属层之间。无定形硫族化物固体活性电解质层是通过将金属硫属元素化合物的肼类前体溶液获得的，将溶液施加到基底上; 然后使前体退火以将前体转化为无定形金属硫族化物。本公开还涉及制造固体电解质器件的方法。

8. 发明申请

US20130322153A1 NON-VOLATILE MEMORY CROSSPOINT REPAIR 有权
标题翻译：非挥发性记忆修复修复
公开(公告)号：US20130322153A1
公开(公告)日：2013-12-05
申请号：US13485748
申请日：2012-05-31
申请人： Geoffrey W. Burr , Kailash Gopalakrishnan , Rohit S. Shenoy
发明人： Geoffrey W. Burr , Kailash Gopalakrishnan , Rohit S. Shenoy
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0002 , G11C13/0004 , G11C13/003 , G11C17/165
摘要： A device for use with a memory cross-point array of elements, each of which comprises a selection device in series with a state-holding device, in one embodiment includes a controller, configured to apply at least one voltage and/or current pulse to a selected one or more of the elements, said selected one or more of the elements including a partially- or completely-shorted selection device, so that said partially- or completely-shorted selection device passes enough current so as to damage its corresponding state-holding device and place said corresponding state-holding device in a highly resistive state, while any other selection device that is not partially- or completely-shorted passes less current so that the state-holding device corresponding to said other selection device remains unaffected. Additional systems and methods are also presented.
摘要翻译：一种与存储器交叉点阵列元件一起使用的装置，每个元件包括与状态保持装置串联的选择装置，在一个实施例中包括控制器，被配置为将至少一个电压和/或电流脉冲施加到所选择的一个或多个元件，所述选定的一个或多个元件包括部分或完全短路的选择装置，使得所述部分或完全短路的选择装置通过足够的电流，以便损坏其对应的状态 - 并且将所述对应的状态保持装置置于高电阻状态，而没有部分或全部短路的任何其他选择装置通过较少电流，使得与所述其他选择装置对应的状态保持装置保持不受影响。还介绍了其他系统和方法。

9. 发明申请

US20080314739A1 ELECTROLYTIC DEVICE BASED ON A SOLUTION-PROCESSED ELECTROLYTE 有权
标题翻译：基于溶液处理电解质的电解设备
公开(公告)号：US20080314739A1
公开(公告)日：2008-12-25
申请号：US11830213
申请日：2007-07-30
申请人： Kailash Gopalakrishnan , David B. Mitzi , Rohit S. Shenoy
发明人： Kailash Gopalakrishnan , David B. Mitzi , Rohit S. Shenoy
IPC分类号： C25B9/06
CPC分类号： H01L45/142 , C23C18/1204 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/1608
摘要： The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.
摘要翻译：本公开内容涉及包含非晶态硫族化物固体活性电解质层的固体电解质装置; 第一和第二金属层。无定形硫族化物固体活性电解质层位于第一和第二金属层之间。无定形硫族化物固体活性电解质层是通过将金属硫属元素化合物的肼类前体溶液获得的，将溶液施加到基底上; 然后使前体退火以将前体转化为无定形金属硫族化物。本公开还涉及制造固体电解质器件的方法。

10. 发明授权

US08842491B2 Decoding scheme for bipolar-based diode three-dimensional memory requiring unipolar programming 有权
标题翻译：需要单极编程的双极型二极管三维存储器的解码方案
公开(公告)号：US08842491B2
公开(公告)日：2014-09-23
申请号：US13551597
申请日：2012-07-17
申请人： Kailash Gopalakrishnan , Chung H. Lam , Jing Li , Robert K. Montoye
发明人： Kailash Gopalakrishnan , Chung H. Lam , Jing Li , Robert K. Montoye
IPC分类号： G11C8/00
CPC分类号： G11C13/0069 , G11C13/0002 , G11C13/0023 , G11C13/0038 , G11C13/004 , G11C2213/71 , G11C2213/72
摘要： A system and method for operating a unipolar memory cell array including a bidirectional access diode. The system includes a column voltage switch electrically coupled to a plurality of column voltages. The column voltage switch includes an output electrically coupled to the bidirectional access diode. The plurality of column voltages includes at least one select column voltage and one deselect column voltage. The system includes a row voltage switch electrically coupled to a plurality of row voltages. The row voltage switch includes an output electrically coupled to the bidirectional access diode. The plurality of row voltages includes at least one select row voltage and one deselect row voltage. The system includes a column and row decoder electrically coupled to a select line of the column and row voltage switches, respectively.
摘要翻译：一种用于操作包括双向存取二极管的单极存储单元阵列的系统和方法。该系统包括电耦合到多个列电压的列电压开关。列电压开关包括电耦合到双向存取二极管的输出。多个列电压包括至少一个选择列电压和一个取消选择列电压。该系统包括电耦合到多个行电压的行电压开关。行电压开关包括电耦合到双向存取二极管的输出。多个行电压包括至少一个选择行电压和一个取消选择行电压。该系统包括分别电耦合到列的选择线和行电压开关的列和行解码器。

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