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1. 发明授权

US5230970A Method of forming metal regions 失效
标题翻译：形成金属区域的方法
公开(公告)号：US5230970A
公开(公告)日：1993-07-27
申请号：US890047
申请日：1992-05-28
申请人： Donald K. Atwood , Georgia J. Fisanick , Michal E. Gross , Abraham Katzir , Gary L. Wolk
发明人： Donald K. Atwood , Georgia J. Fisanick , Michal E. Gross , Abraham Katzir , Gary L. Wolk
IPC分类号： G03F1/72 , H05K3/22
CPC分类号： G03F1/72 , H05K3/225 , Y10S430/146 , Y10S430/148 , Y10S430/165
摘要： A process of radiation-induced formation of a uniform metal or metal oxide region suitable for device application or for repairing transparent defects in pattern metal films of lithographic masks has been found. The process requires that the heat evolved during the radiation-induced reactions be carefully limited to produce the desired uniformity.
摘要翻译：已经发现了辐射诱导形成均匀金属或金属氧化物区域的过程，其适用于设备应用或修复光刻掩模的图案金属膜中的透明缺陷。该过程要求在辐射诱导的反应期间放出的热量被小心地限制以产生所需的均匀性。

2. 发明授权

US4636403A Method of repairing a defective photomask 失效
标题翻译：修复缺陷光掩模的方法
公开(公告)号：US4636403A
公开(公告)日：1987-01-13
申请号：US728551
申请日：1985-04-29
申请人： Georgia J. Fisanick , Michal E. Gross , Gary L. Wolk
发明人： Georgia J. Fisanick , Michal E. Gross , Gary L. Wolk
IPC分类号： C03C17/06 , C23C4/18 , C23C14/28 , C23C16/04 , C23C16/56 , G03F1/72 , H05K3/10 , H05K3/22 , B05D3/06 , B32B35/00
CPC分类号： G03F1/72 , C03C17/06 , C23C14/28 , C23C16/047 , C23C16/56 , C23C4/18 , C03C2217/255 , C03C2218/112 , C03C2218/114 , C03C2218/119 , C03C2218/32 , C03C2218/34 , H05K3/105 , H05K3/225 , Y10S148/14 , Y10S430/146
摘要： A process of laser-induced metal deposition for repairing transparent defects (18) in patterned metal films (14) of photomasks (10). The process comprises the steps of (a) coating the surface (16) of the substrate (12) having the film (14) thereon with a layer of metal-organic compound (50); (b) exposing the portions of the layer of metal-organic compound (50) overlying the defects (18) to a beam (24) of electromagnetic radiation from a laser (22); (c) ramping the power level of the radiation beam (24) delivered by the laser (22) until a metal patch (52) is reflective and adherent is formed; and (d) removing the unexposed portions of metal-organic compound (50) remaining on the substrate surface (16).
摘要翻译：一种用于修复光掩模（10）的图案化金属膜（14）中的透明缺陷（18）的激光诱导金属沉积过程。该方法包括以下步骤：（a）在其上涂覆具有薄膜（14）的基底（12）的表面（16），其上有一层金属 - 有机化合物（50）; （b）将覆盖缺陷（18）的金属 - 有机化合物（50）层的部分暴露于来自激光器（22）的电磁辐射束（24）; （c）使由激光器（22）传送的辐射束（24）的功率电平斜升直到金属贴片（52）形成反射和粘附; 和（d）除去留在基材表面（16）上的金属有机化合物（50）的未曝光部分。

3. 发明授权

US06639724B2 Device having a barrier layer located therein and a method of manufacture therefor 有权
公开(公告)号：US06639724B2
公开(公告)日：2003-10-28
申请号：US09874838
申请日：2001-06-05
申请人： John Eric Bower , Michal E. Gross , Sungho Jin , Hareesh Mavoori , Ainissa Ramirez
发明人： John Eric Bower , Michal E. Gross , Sungho Jin , Hareesh Mavoori , Ainissa Ramirez
IPC分类号： G02B1320
CPC分类号： B81C1/00666 , B81C2201/0167 , B81C2201/017 , G02B6/3518 , G02B6/3548 , G02B6/356 , G02B6/3584 , G02B6/3588 , G02B6/3594 , G02B26/0841
摘要： A device for use in a micro-electro-mechanical system (MEMS) optical device. The device includes a substrate having opposing first and second sides and a diffusion barrier layer formed over at least the first side. The device further includes a light reflective optical layer formed over the diffusion barrier layer on the first side of the substrate. The second side may desirably have a stress balancing layer located thereover.

4. 发明授权

US4851895A Metallization for integrated devices 失效
标题翻译：集成设备的金属化
公开(公告)号：US4851895A
公开(公告)日：1989-07-25
申请号：US59210
申请日：1987-06-03
申请人： Martin L. Green , Michal E. Gross
发明人： Martin L. Green , Michal E. Gross
IPC分类号： H01L23/532
CPC分类号： H01L23/53223 , H01L2924/0002
摘要： Metallization of integrated devices using ruthenium as a metallization material results in well-adhering contacts to source and drain regions as well as to gate oxide. Ruthenium is similarly suited as a diffusion barrier metallization between, e.g., silicon and aluminum and as an interconnection metallization material. And, as a diffusion barrier material, ruthenium dioxide may be used.
摘要翻译：使用钌作为金属化材料的集成器件的金属化导致源极和漏极区以及栅极氧化物的良好粘合接触。钌类似地适合于例如硅和铝之间的扩散阻挡金属化，以及作为互连金属化材料。并且，作为扩散阻挡材料，可以使用二氧化钌。

5. 发明授权

US5416063A Method of producing a layer of superconductive oxide 失效
标题翻译：制造超导氧化物层的方法
公开(公告)号：US5416063A
公开(公告)日：1995-05-16
申请号：US126448
申请日：1987-11-30
申请人： Michal E. Gross , Catherine E. Rice
发明人： Michal E. Gross , Catherine E. Rice
IPC分类号： C23C26/00 , H01L39/24 , B05D3/02 , B05D5/12
CPC分类号： H01L39/2467 , C23C26/00 , H01L39/2425 , H01L39/2454 , H01L39/2458 , Y10S505/704 , Y10S505/734 , Y10S505/737
摘要： Disclosed is a method for forming a superconductive oxide layer on a substrate. The method comprises applying a precursor solution to a major surface of the substrate such that a metal-containing layer is formed on the surface, and heat treating the substrate/layer combination such that at least a substantial portion of the layer material is transformed into superconductive oxide. Exemplarily, the precursor solution is formed by dissolving Ba--, Y--, and Cu-containing compounds in acetic acid and water, spinning the solution on a MgO substrate, driving of unwanted constituents of the resulting layer at 400.degree. C., heating the combination to about 830.degree. C. in O.sub.2 such that the (perovskite) phase that is associated with superconductivity in YBa.sub.2 Cu.sub.3 O.sub.7 is formed, and oxygenating the layer at about 400.degree. C. in O.sub.2.
摘要翻译：公开了一种在基板上形成超导氧化物层的方法。该方法包括将前体溶液施加到基底的主表面上，使得在表面上形成含金属层，并对基底/层组合进行热处理，使得至少大部分的层材料转变为超导氧化物。示例性地，通过将含有Ba，Y和Cu的化合物溶解在乙酸和水中形成前体溶液，将溶液纺丝在MgO基板上，在400℃下驱动所得层的不想要的成分，加热在O 2中组合至约830℃，使得形成与YBa 2 Cu 3 O 7中的超导性相关的（钙钛矿）相，并在约400℃下在O2中使该层氧化。

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