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    • 1. 发明授权
    • Probe storage with doped diamond-like carbon medium and current limiter
    • 探针存储与掺杂类金刚石碳介质和限流器
    • US07738350B2
    • 2010-06-15
    • US11714379
    • 2007-03-05
    • Donald AdamsYevgeny V. AnoikinByong M. Kim
    • Donald AdamsYevgeny V. AnoikinByong M. Kim
    • G11B9/00
    • G11B9/04B82Y10/00G11B9/149
    • According to embodiments of the present invention, a probe storage medium includes a conductive layer as an electrode and a metal, metalloid, and/or non-metal doped diamond-like carbon (DLC) layer disposed on the conductive layer. A probe array may be positioned close proximity with the layer of doped DLC. An individual probe in the probe array may have an atomic force microscope tip. The probe storage medium may be written to by applying a current, voltage, and/or power to the tip between a thresholds current, voltage, and/or power value and a limiting current, voltage, and/or power value. The current, voltage, and/or power cause the layer of DLC to change conductance. The probe storage medium may be read by applying a current, voltage, and/or power to the tip below a threshold current, voltage, and/or power value and sensing the conductance.
    • 根据本发明的实施例,探针存储介质包括作为电极的导电层和设置在导电层上的金属,准金属和/或非金属掺杂的类金刚石碳(DLC)层。 探针阵列可以位于与掺杂DLC层紧密接近的位置。 探针阵列中的单个探针可以具有原子力显微镜尖端。 可以通过在阈值电流,电压和/或功率值与极限电流,电压和/或功率值之间向尖端施加电流,电压和/或功率来写入探针存储介质。 电流,电压和/或功率导致DLC层改变电导。 可以通过将尖端的电流,电压和/或功率施加到阈值电流,电压和/或功率值以下并感测电导来读取探针存储介质。
    • 2. 发明申请
    • Probe storage with doped diamond-like carbon medium and current limiter
    • 探针存储与掺杂类金刚石碳介质和限流器
    • US20080219133A1
    • 2008-09-11
    • US11714379
    • 2007-03-05
    • Donald AdamsYevgeny V. AnoikinByong M. Kim
    • Donald AdamsYevgeny V. AnoikinByong M. Kim
    • G11B9/14
    • G11B9/04B82Y10/00G11B9/149
    • According to embodiments of the present invention, a probe storage medium includes a conductive layer as an electrode and a metal, metalloid, and/or non-metal doped diamond-like carbon (DLC) layer disposed on the conductive layer. A probe array may be positioned close proximity with the layer of doped DLC. An individual probe in the probe array may have an atomic force microscope tip. The probe storage medium may be written to by applying a current, voltage, and/or power to the tip between a thresholds current, voltage, and/or power value and a limiting current, voltage, and/or power value. The current, voltage, and/or power cause the layer of DLC to change conductance. The probe storage medium may be read by applying a current, voltage, and/or power to the tip below a threshold current, voltage, and/or power value and sensing the conductance.
    • 根据本发明的实施例,探针存储介质包括作为电极的导电层和设置在导电层上的金属,准金属和/或非金属掺杂的类金刚石碳(DLC)层。 探针阵列可以位于与掺杂DLC层紧密接近的位置。 探针阵列中的单个探针可以具有原子力显微镜尖端。 可以通过在阈值电流,电压和/或功率值与极限电流,电压和/或功率值之间向尖端施加电流,电压和/或功率来写入探针存储介质。 电流,电压和/或功率导致DLC层改变电导。 可以通过将尖端的电流,电压和/或功率施加到阈值电流,电压和/或功率值以下并感测电导来读取探针存储介质。
    • 8. 发明申请
    • Media for writing highly resolved domains
    • 撰写高度解决的域的媒体
    • US20070041237A1
    • 2007-02-22
    • US11177550
    • 2005-07-08
    • Yevgeny AnoikinDonald AdamsZhaohui Fan
    • Yevgeny AnoikinDonald AdamsZhaohui Fan
    • G11C11/00
    • G11C13/02B82Y10/00G11B9/04G11B9/08G11B9/149G11C13/0004G11C23/00
    • Systems in accordance with the present invention can include a tip contactable with a media, the media including a phase change material in an embodiment (or polarity-dependent memory material or other memory material in other embodiments) disposed between a substrate and an overcoat. The overcoat is a co-deposited film having a conductive portion and a substantially non-conductive portion, the co-deposited film conducting current more efficiently through the overcoat than across the overcoat. The overcoat substantially directs the current so that a portion of the phase change material directly beneath the tip is heated to a sufficient temperature such that the structure of the material become disordered. The current is then removed from the phase change material, which is quickly cooled to form an domain having a resistivity larger than the crystalline bulk structure.
    • 根据本发明的系统可以包括与介质接触的尖端,所述介质包括设置在基底和外涂层之间的实施例中的相变材料(或其它实施例中的极性相关的记忆材料或其它记忆材料)。 外涂层是具有导电部分和基本上非导电部分的共沉积膜,共沉积膜通过外涂层比通过外涂层更有效地传导电流。 外涂层基本上引导电流,使得直接在尖端下方的相变材料的一部分被加热到足够的温度,使得材料的结构变得无序。 然后将电流从相变材料中去除,其被快速冷却以形成具有大于结晶体结构的电阻率的畴。