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1. 发明授权

US07041238B2 Conductive polymer having positive temperature coefficient, method of controlling positive temperature coefficient property of the same and electrical device using the same 失效
标题翻译：具有正温度系数的导电聚合物，控制其正温度系数性质的方法和使用其的电气装置
公开(公告)号：US07041238B2
公开(公告)日：2006-05-09
申请号：US10487956
申请日：2002-04-25
申请人： Do-Yun Kim , Jong-Ho Lee , Soo-An Choi , Joon-Koo Han , Chang-Mo Ko
发明人： Do-Yun Kim , Jong-Ho Lee , Soo-An Choi , Joon-Koo Han , Chang-Mo Ko
IPC分类号： H01B1/22 , H01B1/24 , H01C7/02
CPC分类号： H01C17/06586 , H01C7/027
摘要： PTC conductive polymer composition includes organic polymer containing polyolefin components essentially consisting of 30˜40 w % high density polyethylene (HDPE), 20˜40 w % low density polyethylene (LDPE) and 10˜30 w % ethylene-acrylic-acid (EAA) or ethylene-vinyl-acetate (EVA), and 20˜30 w % high or low density polyethylene which is denaturated into maleic anhydride compound; 60˜120 w % electrical conductive particles dispersed into the organic polymer, the electrical conductive particles by weight of the organic polymer; and 0.2˜0.5 w % peroxidic cross-linking agent added for cross-linking reaction by weight of the organic polymer. Thus, it becomes possible to control PTC characteristics such as switching temperature and trip time of an electrical device by suitably adjusting an added amount of the polyethylene, which is denaturated into maleic anhydride compound.
摘要翻译： PTC导电聚合物组合物包括基本上由30〜40w％的高密度聚乙烯（HDPE），20〜40w％的低密度聚乙烯（LDPE）和10〜30w％的乙烯 - 丙烯酸（EAA）组成的聚烯烃成分的有机聚合物，或乙烯 - 乙酸乙烯酯（EVA）和20〜30w％的高密度或低密度聚乙烯，其变性成马来酸酐化合物; 60〜120w％的导电颗粒分散在有机聚合物中，导电颗粒按有机聚合物的重量计; 并加入0.2〜0.5w％的过氧化物交联剂用于通过有机聚合物的重量进行交联反应。因此，通过适当地调节将变性为马来酸酐化合物的聚乙烯的添加量，可以控制电气装置的PTC特性如开关温度和跳闸时间。

2. 发明申请

US20070103269A1 Surface-mounted thermistor and manufacturing method thereof 审中-公开
标题翻译：表面贴装热敏电阻及其制造方法
公开(公告)号：US20070103269A1
公开(公告)日：2007-05-10
申请号：US11642771
申请日：2006-12-19
申请人： Jun-Ku Han , Su-An Choi , Chang-Mo Ko , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee , Dong-Hyun Kim
发明人： Jun-Ku Han , Su-An Choi , Chang-Mo Ko , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee , Dong-Hyun Kim
IPC分类号： H01C7/13 , H01C7/10
CPC分类号： H05K3/3442 , H01C1/148 , H01C7/008 , H05K2201/09181 , H05K2201/09381 , H05K2201/10636 , Y02P70/611 , Y02P70/613
摘要： A thermistor, which is to be mounted on a PCB, for protecting other circuit elements is disclosed. Electrode patterns separately formed on both surfaces of a film resistance element are respectively shaped into two parts which are engaged to each other with a non-conductive gap interposed therebetween. Thus, a Tombstone phenomenon caused by asymmetric structure may be fundamentally prevented. Grooves are formed in both sides of the thermistor, and connection portions for electrically connecting the electrodes formed on both surfaces of the thermistor are formed through the inside of the grooves or through the sides except the grooves. Thus, though a crack arises in the connection portion, it is possible to prevent the crack from being propagated to the entire connection portion along the side of the thermistor.
摘要翻译：公开了一种要安装在PCB上的热敏电阻，用于保护其他电路元件。分别形成在膜电阻元件的两个表面上的电极图案分别成形为彼此接合的两个部分，其间插入非导电间隙。因此，可以从根本上防止由不对称结构引起的墓碑现象。在热敏电阻的两侧形成槽，并且通过槽的内部或通过除了凹槽之外的侧面形成用于电连接形成在热敏电阻的两个表面上的电极的连接部。因此，尽管在连接部分发生裂缝，但是可以防止裂纹沿着热敏电阻的一侧传播到整个连接部分。

3. 发明授权

US07173512B2 Thermistor having improved lead structure and secondary battery having the thermistor 失效
标题翻译：具有改进的引线结构的热敏电阻和具有该热敏电阻的二次电池
公开(公告)号：US07173512B2
公开(公告)日：2007-02-06
申请号：US10888309
申请日：2004-07-09
申请人： Chang-Mo Ko , Su-An Choi , Jun-Ku Han , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee , Jong-Seo Yoon
发明人： Chang-Mo Ko , Su-An Choi , Jun-Ku Han , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee , Jong-Seo Yoon
IPC分类号： H01C7/10
CPC分类号： H01C7/008 , H01C1/144
摘要： A thermistor of which resistance is changed depending on temperature and a secondary battery to which the thermistor is attached are disclosed. The thermistor is attached to an object via a lead which is made of different kinds of materials. The lead is configured so that a part of the lead to be united to the thermistor electrode is mainly made of the same material as the electrode and a part of the lead to be united to the object is mainly made of the same material as the surface of the object. Thus, the thermistor may be simply attached to the object only using the ultrasonic welding, thereby remarkably reducing junction inferiorities.
摘要翻译：公开了根据温度改变电阻的热敏电阻和附接有热敏电阻的二次电池。热敏电阻通过由不同种类的材料制成的引线附着到物体上。引线被配置为使得与热敏电阻电极相结合的引线的一部分主要由与电极相同的材料制成，并且与物体结合的引线的一部分主要由与表面相同的材料制成的对象。因此，热敏电阻可以仅使用超声波焊接简单地附接到物体，从而显着地减少了接合性。

4. 发明授权

US07173511B2 Surface-mounted thermistor and manufacturing method thereof 失效
公开(公告)号：US07173511B2
公开(公告)日：2007-02-06
申请号：US10859505
申请日：2004-06-01
申请人： Jun-Ku Han , Su-An Choi , Chang-Mo Ko , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee , Dong-Hyun Kim
发明人： Jun-Ku Han , Su-An Choi , Chang-Mo Ko , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee , Dong-Hyun Kim
IPC分类号： H01C7/10
CPC分类号： H05K3/3442 , H01C1/148 , H01C7/008 , H05K2201/09181 , H05K2201/09381 , H05K2201/10636 , Y02P70/611 , Y02P70/613
摘要： A thermistor, which is to be mounted on a PCB, for protecting other circuit elements is disclosed. Electrode patterns separately formed on both surfaces of a film resistance element are respectively shaped into two parts which are engaged to each other with a non-conductive gap interposed therebetween. Thus, a Tombstone phenomenon caused by asymmetric structure may be fundamentally prevented. Grooves are formed in both sides of the thermistor, and connection portions for electrically connecting the electrodes formed on both surfaces of the thermistor are formed through the inside of the grooves or through the sides except the grooves. Thus, though a crack arises in the connection portion, it is possible to prevent the crack from being propagated to the entire connection portion along the side of the thermistor.

5. 发明申请

US20050206494A1 Thermistor having improved lead structure and secondary battery having the thermistor 失效
标题翻译：具有改进的引线结构的热敏电阻和具有该热敏电阻的二次电池
公开(公告)号：US20050206494A1
公开(公告)日：2005-09-22
申请号：US10888309
申请日：2004-07-09
申请人： Chang-Mo Ko , Su-An Choi , Jun-Ku Han , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee , Jong-Seo Yoon
发明人： Chang-Mo Ko , Su-An Choi , Jun-Ku Han , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee , Jong-Seo Yoon
IPC分类号： H01C7/02 , H01C1/144 , H01C7/00 , H01C7/10 , H01C7/13 , H01M2/10 , H01M2/34 , H01M10/48
CPC分类号： H01C7/008 , H01C1/144
摘要： A thermistor of which resistance is changed depending on temperature and a secondary battery to which the thermistor is attached are disclosed. The thermistor is attached to an object via a lead which is made of different kinds of materials. The lead is configured so that a part of the lead to be united to the thermistor electrode is mainly made of the same material as the electrode and a part of the lead to be united to the object is mainly made of the same material as the surface of the object. Thus, the thermistor may be simply attached to the object only using the ultrasonic welding, thereby remarkably reducing junction inferiorities.
摘要翻译：公开了根据温度改变电阻的热敏电阻和附接有热敏电阻的二次电池。热敏电阻通过由不同种类的材料制成的引线附着到物体上。引线被配置为使得与热敏电阻电极相结合的引线的一部分主要由与电极相同的材料制成，并且与物体结合的引线的一部分主要由与表面相同的材料制成的对象。因此，热敏电阻可以仅使用超声波焊接简单地附接到物体，从而显着地减少了接合性。

6. 发明授权

US07145431B2 Thermistor having symmetrical structure 失效
标题翻译：具有对称结构的热敏电阻
公开(公告)号：US07145431B2
公开(公告)日：2006-12-05
申请号：US10724484
申请日：2003-11-28
申请人： Jun-Ku Han , Su-An Choi , Chang-Mo Ko , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee
发明人： Jun-Ku Han , Su-An Choi , Chang-Mo Ko , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee
IPC分类号： H01C7/10
CPC分类号： H01C1/1406 , H01C7/02
摘要： A thermistor is disclosed, which comprises a resistance element having upper and lower surfaces and showing a resistance varying characteristics according to the change of temperature; first and second conductive layers formed on the upper surface of the resistance element and engaged to each other with a non-conductive gap interposed therebetween; first and second electrodes formed on the lower surface of the resistance element and electrically separated from each other; a first connector for electrically connecting the first conductive layer to the first electrode; and a second connector for electrically connecting the second conductive layer to the second electrode. Thus, the thermistor has a structurally point-symmetric shape, so it is possible to prevent the Tombstone phenomenon, caused by an asymmetric structure. Since the conductive layers having opposite polarities are engaged to each other with the non-conductive gap therebetween, the flow of current is increased and the resistance of the thermistor is decreased.
摘要翻译：公开了一种热敏电阻器，其包括具有上表面和下表面的电阻元件，并且根据温度变化显示出电阻变化特性; 第一和第二导电层形成在电阻元件的上表面上并且彼此接合，并具有插入其间的非导电间隙; 第一和第二电极形成在电阻元件的下表面上并彼此电分离; 用于将所述第一导电层电连接到所述第一电极的第一连接器; 以及用于将所述第二导电层电连接到所述第二电极的第二连接器。因此，热敏电阻具有结构上点对称的形状，因此可以防止由不对称结构引起的墓碑现象。由于具有相反极性的导电层之间具有非导电间隙而彼此接合，所以电流的流动增加并且热敏电阻的电阻降低。

7. 发明申请

US20050057338A1 Surface-mounted thermistor and manufacturing method thereof 失效
标题翻译：表面贴装热敏电阻及其制造方法
公开(公告)号：US20050057338A1
公开(公告)日：2005-03-17
申请号：US10859505
申请日：2004-06-01
申请人： Jun-Ku Han , Su-An Choi , Chang-Mo Ko , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee , Dong-Hyun Kim
发明人： Jun-Ku Han , Su-An Choi , Chang-Mo Ko , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee , Dong-Hyun Kim
IPC分类号： H01C7/02 , H01C1/148 , H01C7/00 , H01C7/04 , H01C17/00 , H05K3/34 , H01C7/10
CPC分类号： H05K3/3442 , H01C1/148 , H01C7/008 , H05K2201/09181 , H05K2201/09381 , H05K2201/10636 , Y02P70/611 , Y02P70/613
摘要： A thermistor, which is to be mounted on a PCB, for protecting other circuit elements is disclosed. Electrode patterns separately formed on both surfaces of a film resistance element are respectively shaped into two parts which are engaged to each other with a non-conductive gap interposed therebetween. Thus, a Tombstone phenomenon caused by asymmetric structure may be fundamentally prevented. Grooves are formed in both sides of the thermistor, and connection portions for electrically connecting the electrodes formed on both surfaces of the thermistor are formed through the inside of the grooves or through the sides except the grooves. Thus, though a crack arises in the connection portion, it is possible to prevent the crack from being propagated to the entire connection portion along the side of the thermistor.
摘要翻译：公开了一种要安装在PCB上的热敏电阻，用于保护其他电路元件。分别形成在膜电阻元件的两个表面上的电极图案分别成形为彼此接合的两个部分，其间插入非导电间隙。因此，可以从根本上防止由不对称结构引起的墓碑现象。在热敏电阻的两侧形成槽，并且通过槽的内部或通过除了凹槽之外的侧面形成用于电连接形成在热敏电阻的两个表面上的电极的连接部。因此，尽管在连接部分发生裂缝，但是可以防止裂纹沿着热敏电阻的一侧传播到整个连接部分。

8. 发明授权

US06965293B2 Electrical device having PTC conductive polymer 失效
标题翻译：具有PTC导电聚合物的电气装置
公开(公告)号：US06965293B2
公开(公告)日：2005-11-15
申请号：US10877188
申请日：2004-06-24
申请人： Soo-An Choi , Jong-Ho Lee , Chang-Hee Choi , Tae-Sung Kim , Jun-Ku Hahn
发明人： Soo-An Choi , Jong-Ho Lee , Chang-Hee Choi , Tae-Sung Kim , Jun-Ku Hahn
IPC分类号： H01C1/14 , H01C7/02 , H01C7/10
CPC分类号： H01C1/1406 , H01C7/027
摘要： An electrical device including a PTC conductive polymer sheet, and first and second electrodes physically contacted with opposite surfaces of the conductive polymer sheet is disclosed. The first and second electrodes have a plurality of protrusions protruded from surfaces thereof, respectively. The protrusions have an surface roughness (Rz) of 1 to 20 μm and an average width ({overscore (Rw)}) which is 0.5 to 2 times of the surface roughness (Rz), and an average gap ({overscore (Rg)}) between adjacent protrusions is 0.5 and 2 times of the surface roughness (Rz). The conductive polymer sheet has a thickness which is more than 5 times of the surface roughness (Rz).
摘要翻译：公开了一种包括PTC导电聚合物薄片的电气装置以及与导电聚合物薄片的相对表面物理接触的第一和第二电极。第一和第二电极分别具有从其表面突出的多个突起。突起的表面粗糙度（Rz）为1〜20μm，平均宽度（{超芯（Rw）为表面粗糙度（Rz）的0.5〜2倍），平均间隙（{间距（Rg）突起是表面粗糙度的0.5倍和2倍（Rz），导电性聚合物片的厚度大于表面粗糙度（Rz）的5倍。

9. 发明授权

US11138898B2 Device and method for providing studying of incorrectly answered question 有权
公开(公告)号：US11138898B2
公开(公告)日：2021-10-05
申请号：US16342248
申请日：2017-10-13
申请人： Jong-Ho Lee
发明人： Jong-Ho Lee
IPC分类号： G09B7/08 , G09B7/073 , G06F16/33 , G06Q50/20 , G09B7/06 , G09B7/02 , G06F9/44
摘要： Disclosed are a device and method for providing a checking question designed to allow a user to perform the checking study of correct answers or incorrect answers by using the choices of one or more incorrectly answered questions. The device includes: an incorrectly answered question selection unit which selects one or more questions incorrectly answered by a user from among questions provided to the user; a choice extraction unit which extracts correct answers as choices for the respective selected incorrectly answered questions; a checking question generation unit which generates one or more checking questions designed to allow the user to study the incorrectly answered questions by allocating the extracted choices so that the extracted choices become the choices of the checking questions; and a checking study provision unit which provides the study of the incorrectly answered questions by transmitting the generated checking questions to a user terminal.

10. 发明授权

US09553094B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09553094B2
公开(公告)日：2017-01-24
申请号：US15069920
申请日：2016-03-14
申请人： Wei-Hsiung Tseng , Ju-Youn Kim , Seok-Jun Won , Jong-Ho Lee , Hye-Lan Lee , Yong-Ho Ha
发明人： Wei-Hsiung Tseng , Ju-Youn Kim , Seok-Jun Won , Jong-Ho Lee , Hye-Lan Lee , Yong-Ho Ha
IPC分类号： H01L27/092 , H01L29/49 , H01L29/43
CPC分类号： H01L27/0924 , H01L21/02126 , H01L21/0214 , H01L21/0217 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/823821 , H01L21/823842 , H01L21/823857 , H01L21/823864 , H01L21/845 , H01L29/165 , H01L29/41791 , H01L29/435 , H01L29/4958 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545 , H01L29/6681 , H01L29/7848
摘要： Provided is a method for fabricating a semiconductor device. The method includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench; forming a high-k dielectric layer in the first trench; successively forming a diffusion layer and a blocking layer on the high-k dielectric layer; subsequently performing annealing; after the annealing, successively removing the blocking layer and the diffusion layer; forming a first barrier layer on the high-k dielectric layer; successively forming a work function adjustment layer and a gate conductor on the first barrier layer; and forming a capping layer on the gate conductor.
摘要翻译：提供一种制造半导体器件的方法。该方法包括在衬底上形成层间绝缘层，所述层间绝缘层包括第一沟槽; 在第一沟槽中形成高k电介质层; 在高k电介质层上依次形成扩散层和阻挡层; 随后进行退火; 退火后，依次去除阻挡层和扩散层; 在高k电介质层上形成第一阻挡层; 在第一阻挡层上依次形成功函数调整层和栅极导体; 并在栅极导体上形成覆盖层。

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