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    • 2. 发明授权
    • Reading method of non-volatile memory device
    • 非易失性存储器件的读取方法
    • US09159436B2
    • 2015-10-13
    • US13620466
    • 2012-09-14
    • Do-Young Kim
    • Do-Young Kim
    • G11C16/26G11C16/24G11C16/34
    • G11C16/26G11C16/24G11C16/3418
    • A non-volatile memory device includes a first selection transistor, a second selection transistor, and a plurality of memory cells serially coupled between the first selection transistor and the second selection transistor. A reading method of the non-volatile memory device includes applying a read voltage to a gate of a selected memory cell; applying a first pass voltage to a gate of a memory cell adjacent to the selected memory cell, and applying a second pass voltage to gates of the other memory cells, wherein the selected memory cell is in one program state among first to Tth program states in a direction that threshold voltage is increased, where T is a natural number greater than 2, and the first pass voltage is decreased as the selected memory cell goes toward the Tth program state.
    • 非易失性存储器件包括第一选择晶体管,第二选择晶体管和串联耦合在第一选择晶体管和第二选择晶体管之间的多个存储单元。 非易失性存储器件的读取方法包括将读取电压施加到所选存储单元的栅极; 对与所选择的存储单元相邻的存储单元的栅极施加第一通过电压,以及向其它存储单元的栅极施加第二通过电压,其中所选择的存储单元在第一至第T程序状态中处于一个程序状态 阈值电压增加的方向,其中T是大于2的自然数,并且随着所选择的存储器单元朝向第T编程状态,第一通过电压减小。