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1. 发明授权

US07829638B2 Antireflective hardmask composition and methods for using same 有权
标题翻译：防反射硬掩模组合物及其使用方法
公开(公告)号：US07829638B2
公开(公告)日：2010-11-09
申请号：US11348203
申请日：2006-02-06
申请人： Dong Seon Uh , Chang Il Oh , Do Hyeon Kim , Jin Kuk Lee , Irina Nam
发明人： Dong Seon Uh , Chang Il Oh , Do Hyeon Kim , Jin Kuk Lee , Irina Nam
IPC分类号： G03F7/11 , G03F7/039
CPC分类号： G03F7/091
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided.
摘要翻译：提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。

2. 发明授权

US11311016B1 Preparation method for plant disease control composition and plant disease control method for seed soaking using the same 有权
公开(公告)号：US11311016B1
公开(公告)日：2022-04-26
申请号：US17403370
申请日：2021-08-16
申请人： Do Hyeon Kim
发明人： Do Hyeon Kim
IPC分类号： A01N59/14 , A01N59/26 , A01N59/20 , A01P15/00
摘要： Disclosed is a plant disease control composition for soaking virus-infected plant seeds. The plant disease control composition is a composition including nitrogen, phosphate, potassium oxide, manganese, molybdenum, zinc, boron, copper, and a surfactant and characterized by exhibiting an effect on the diseases of cucurbitaceae or solanaceae crops. A plant disease control method for seed soaking involves soaking seeds in a plant disease control composition including nitrogen (N), phosphoric anhydride (P2O5), potassium oxide (K2O), boron (B), manganese (Mn), molybdenum (Mo), zinc (Zn), copper (Cu), and a surfactant to control plant diseases.

3. 发明申请

US20080118875A1 Hardmask composition and associated methods 有权
标题翻译：硬掩模组成及相关方法
公开(公告)号：US20080118875A1
公开(公告)日：2008-05-22
申请号：US11984741
申请日：2007-11-21
申请人： Mi Young Kim , Sang Kyun Kim , Sang Hak Lim , Sang Ran Koh , Hui Chan Yun , Do Hyeon Kim , Dong Seon Uh , Jong Seob Kim
发明人： Mi Young Kim , Sang Kyun Kim , Sang Hak Lim , Sang Ran Koh , Hui Chan Yun , Do Hyeon Kim , Dong Seon Uh , Jong Seob Kim
IPC分类号： C08G77/04 , C08K5/16 , C08K5/3432 , C08K5/42 , C08K5/52 , G03F7/20
CPC分类号： C08G77/50 , C08L83/14 , G03F7/11 , G03F7/2022 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0271 , H01L21/31144 , H01L21/3122
摘要： A hardmask composition includes a solvent and an organosilicon copolymer. The organosilicon copolymer may be represented by Formula A: (SiO1.5—Y—SiO1.5)x(R3SiO1.5)y (A) wherein x and y may satisfy the following relations: x is about 0.05 to about 0.9, y is about 0.05 to about 0.9, and x+y=1, R3 may be a C1-C12 alkyl group, and Y may be a linking group including a substituted or unsubstituted, linear or branched C1-C20 alkyl group, a C1-C20 group containing a chain that includes an aromatic ring, a heterocyclic ring, a urea group or an isocyanurate group, or a C2-C20 group containing one or more multiple bonds.
摘要翻译：硬掩模组合物包括溶剂和有机硅共聚物。有机硅共聚物可以由式A表示：<？in-line-formula description =“In-line Formulas”end =“lead”→（SiO 1.5 -Y-SiO 1.5 （A）＆lt;＆lt; /＆gt;（S）＆lt; 公式描述=“在线公式”end =“tail”？>其中x和y可以满足以下关系：x为约0.05至约0.9，y为约0.05至约0.9，x + y = 1，R 3可以是C 1 -C 12烷基，Y可以是包含取代或未取代的直链或支链C 含有包含芳香环的链的C 1 -C 20 -C 20烷基，C 1 -C 20 -C 20烷基，C 1 -C 20 -C 20烷基，，杂环，脲基或异氰脲酸酯基，或含有一个或多个多重键的C 2 -C 20 -C 20基团。

4. 发明授权

US07879526B2 Hardmask compositions for resist underlayer films 有权
标题翻译：用于抗蚀剂底层膜的硬掩模组合物
公开(公告)号：US07879526B2
公开(公告)日：2011-02-01
申请号：US11508074
申请日：2006-08-22
申请人： Dong Seon Uh , Chang Il Oh , Do Hyeon Kim , Hui Chan Yun , Jin Kuk Lee , Irina Nam , Jong Seob Kim
发明人： Dong Seon Uh , Chang Il Oh , Do Hyeon Kim , Hui Chan Yun , Jin Kuk Lee , Irina Nam , Jong Seob Kim
IPC分类号： G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36 , G03C1/825
CPC分类号： H01L21/0273 , G03F7/11
摘要： Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2 (R)m—Si—(OCH3)4-m (2) in the presence of a catalyst, wherein R is a monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent. Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.
摘要翻译：本文提供了用于抗蚀剂下层膜的硬掩模组合物，其中根据本发明的一些实施方案，硬掩模组合物包括通过式1的化合物与式2（R）m-Si-（OCH 3）的化合物反应制备的聚合物，（2）在催化剂存在下，其中R为一价有机基团，n为3至20的整数，m为1或2; 和有机溶剂。本文还提供了使用根据本发明实施例的硬掩模组合物制造半导体集成电路器件的方法。还提供了通过本发明的方法实施例制造的半导体集成电路器件。

5. 发明授权

US07405029B2 Antireflective hardmask composition and methods for using same 有权
标题翻译：防反射硬掩模组合物及其使用方法
公开(公告)号：US07405029B2
公开(公告)日：2008-07-29
申请号：US11325281
申请日：2006-01-04
申请人： Chang Il Oh , Dong Seon Uh , Do Hyeon Kim , Jin Kuk Lee , Irina Nam , Hui Chan Yun , Jong Seob Kim
发明人： Chang Il Oh , Dong Seon Uh , Do Hyeon Kim , Jin Kuk Lee , Irina Nam , Hui Chan Yun , Jong Seob Kim
IPC分类号： G03C1/73 , G03C1/76 , G03F7/095
CPC分类号： G03F7/091
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) wherein R1 and R2 may each independently be hydrogen, hydroxyl, C1-10 alkyl, C6-10 aryl, allyl, or halo; R3 and R4 may be each independently be hydrogen, a crosslinking functionality, or a chromophore; R5 and R6 may each independently be hydrogen or an alkoxysiloxane having the structure of Formula (II), wherein at least one of R5 and R6 is an alkoxysilane; wherein R8, R9, and R10 may each independently be a hydrogen, alkyl, or aryl; and x is 0 or a positive integer; R7 may be hydrogen, C1-10 alkyl, C6-10 aryl, or allyl; and n is a positive integer; (b) a crosslinking component; and (c) an acid catalyst.
摘要翻译：提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。本发明的抗反射硬掩模组合物包括：（a）包含至少一种具有式（I）的单体单元的聚合物的聚合物组分，其中R 1和R 2各自独立地是氢，羟基，C 1-10烷基，C 6-10芳基，烯丙基或卤素; R 3和R 4可以各自独立地为氢，交联官能团或发色团; R 5和R 6可各自独立地为氢或具有式（II）结构的烷氧基硅氧烷，其中R 5和和R 6是烷氧基硅烷; 其中R 8，R 9和R 10可各自独立地为氢，烷基或芳基; x为0或正整数; R 7可以是氢，C 1-10烷基，C 6-10芳基或烯丙基; 并且n是正整数; （b）交联组分; 和（c）酸催化剂。

6. 发明申请

US20090226824A1 Hardmask composition and associated methods 有权
标题翻译：硬掩模组成及相关方法
公开(公告)号：US20090226824A1
公开(公告)日：2009-09-10
申请号：US12320874
申请日：2009-02-06
申请人： Sang Kyun Kim , Sang Hak Lim , Mi Young Kim , Sang Ran Koh , Hui Chan Yun , Do Hyeon Kim , Dong Seon Uh , Jong Seob Kim
发明人： Sang Kyun Kim , Sang Hak Lim , Mi Young Kim , Sang Ran Koh , Hui Chan Yun , Do Hyeon Kim , Dong Seon Uh , Jong Seob Kim
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： H01L21/31144 , C08G77/04 , C09D183/04 , H01L21/0276
摘要： A hardmask composition for processing a resist underlayer film includes a solvent and an organosilane polymer, wherein the organosilane polymer is represented by Formula 6: In Formula 6, R is methyl or ethyl, R′ is substituted or unsubstituted cyclic or acyclic alkyl, Ar is an aromatic ring-containing functional group, x, y and z satisfy the relations x+y=4, 0.4≦x≦4, 0≦y≦3.6, and 4×10−4≦z≦1, and n is from about 3 to about 500.
摘要翻译：用于加工抗蚀剂下层膜的硬掩模组合物包括溶剂和有机硅烷聚合物，其中有机硅烷聚合物由式6表示：在式6中，R是甲基或乙基，R'是取代或未取代的环状或无环烷基，Ar是含芳环的官能团x，y和z满足x + y = 4,0.4 <= x <= 4,0 <= y <= 3.6和4×10-4 <= z <1的关系，以及 n为约3至约500。

7. 发明申请

US20070148974A1 Hardmask compositions for resist underlayer films 有权
标题翻译：用于抗蚀剂底层膜的硬掩模组合物
公开(公告)号：US20070148974A1
公开(公告)日：2007-06-28
申请号：US11508074
申请日：2006-08-22
申请人： Dong Seon Uh , Chang Il Oh , Do Hyeon Kim , Hui Chan Yun , Jin Kuk Lee , Irina Nam , Jong Seob Kim
发明人： Dong Seon Uh , Chang Il Oh , Do Hyeon Kim , Hui Chan Yun , Jin Kuk Lee , Irina Nam , Jong Seob Kim
IPC分类号： C23F1/00 , H01L21/302
CPC分类号： H01L21/0273 , G03F7/11
摘要： Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2 (R)m—Si—(OCH3)4-m (2) in the presence of a catalyst, wherein R is a monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent.Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.
摘要翻译：本文提供了用于抗蚀剂下层膜的硬掩模组合物，其中根据本发明的一些实施方案，硬掩模组合物包括通过式1的化合物与式2化合物的反应制备的聚合物，（2）（2）式（2）所示的化合物，其中R 1，R 2，R 3，在存在催化剂的情况下，<？in-line-formula description =“In-line Formulas”end =“tail”？>，其中R为一价有机基团，n为3至20的整数，m为1 或2; 和有机溶剂。本文还提供了使用根据本发明实施例的硬掩模组合物制造半导体集成电路器件的方法。还提供了通过本发明的方法实施例生产的半导体集成电路器件。

8. 发明申请

US20070148586A1 Hardmask compositions for resist underlayer film and method for producing semiconductor integrated circuit device using the same 有权
标题翻译：用于抗蚀剂下层膜的硬掩模组合物和使用其的半导体集成电路器件的制造方法
公开(公告)号：US20070148586A1
公开(公告)日：2007-06-28
申请号：US11507701
申请日：2006-08-22
申请人： Dong Seon Uh , Chang Il Oh , Do Hyeon Kim , Hui Chan Yun , Jin Kuk Lee , Irina Nam , Jong Seob Kim
发明人： Dong Seon Uh , Chang Il Oh , Do Hyeon Kim , Hui Chan Yun , Jin Kuk Lee , Irina Nam , Jong Seob Kim
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/0752 , Y10S430/106 , Y10S430/111
摘要： Provided herein are hardmask compositions for resist underlayer films, wherein in some embodiments, the hardmask compositions include(a) a first polymer prepared by the reaction of a compound of Formula 1 wherein n is a number of 3 to 20, with a compound of Formula 2 (R)m—Si—(OCH3)4-m (2) wherein R is a monovalent organic group and m is 0, 1 or 2;(b) a second polymer that includes at least one of the structures represented by Formulae 3-6;(c) an acid or base catalyst; and(d) an organic solvent.Further provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the present invention.In addition, provided herein are semiconductor integrated circiut devices produced by a method embodiment of the invention.
摘要翻译：本文提供了用于抗蚀剂下层膜的硬掩模组合物，其中在一些实施方案中，硬掩模组合物包括（a）通过其中n为3至20数的式1化合物与式1化合物的反应制备的第一聚合物 2 <？in-line-formula description =“In-line Formulas”end =“lead”？（R） -Si-（OCH 3 3）_{其中R是一价有机基团，m是0,1或2; （b）第二聚合物，其包含由式3-6表示的至少一种结构; （c）酸或碱催化剂; 和（d）有机溶剂。本文还提供了使用根据本发明实施例的硬掩模组合物制造半导体集成电路器件的方法。此外，本发明提供了通过本发明的方法实施例制造的半导体集成循环装置。}

9. 发明授权

US08916329B2 Hardmask composition and associated methods 有权
标题翻译：硬掩模组成及相关方法
公开(公告)号：US08916329B2
公开(公告)日：2014-12-23
申请号：US12320874
申请日：2009-02-06
申请人： Sang Kyun Kim , Sang Hak Lim , Mi Young Kim , Sang Ran Koh , Hui Chan Yun , Do Hyeon Kim , Dong Seon Uh , Jong Seob Kim
发明人： Sang Kyun Kim , Sang Hak Lim , Mi Young Kim , Sang Ran Koh , Hui Chan Yun , Do Hyeon Kim , Dong Seon Uh , Jong Seob Kim
IPC分类号： G03F7/075 , H01L21/027 , C09D183/04 , C08G77/04 , H01L21/311
CPC分类号： H01L21/31144 , C08G77/04 , C09D183/04 , H01L21/0276
摘要： A hardmask composition for processing a resist underlayer film includes a solvent and an organosilane polymer, wherein the organosilane polymer is represented by Formula 6: In Formula 6, R is methyl or ethyl, R′ is substituted or unsubstituted cyclic or acyclic alkyl, Ar is an aromatic ring-containing functional group, x, y and z satisfy the relations x+y=4, 0.4≦x≦4, 0≦y≦3.6, and 4×10−4≦z≦1, and n is from about 3 to about 500.
摘要翻译：用于加工抗蚀剂下层膜的硬掩模组合物包括溶剂和有机硅烷聚合物，其中有机硅烷聚合物由式6表示：在式6中，R是甲基或乙基，R'是取代或未取代的环状或无环烷基，Ar是含芳环的官能团x，y和z满足关系x + y = 4,0.4＆nlE; x＆nlE; 4,0＆nlE; y＆nlE; 3.6和4×10-4＆nlE; z＆nlE; 1，n为约3至约500。

10. 发明授权

US08273519B2 Hardmask composition and associated methods 有权
标题翻译：硬掩模组成及相关方法
公开(公告)号：US08273519B2
公开(公告)日：2012-09-25
申请号：US11984741
申请日：2007-11-21
申请人： Mi Young Kim , Sang Kyun Kim , Sang Hak Lim , Sang Ran Koh , Hui Chan Yun , Do Hyeon Kim , Dong Seon Uh , Jong Seob Kim
发明人： Mi Young Kim , Sang Kyun Kim , Sang Hak Lim , Sang Ran Koh , Hui Chan Yun , Do Hyeon Kim , Dong Seon Uh , Jong Seob Kim
IPC分类号： G03F7/075 , G03F7/038 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： C08G77/50 , C08L83/14 , G03F7/11 , G03F7/2022 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0271 , H01L21/31144 , H01L21/3122
摘要： A hardmask composition includes a solvent and an organosilicon copolymer. The organosilicon copolymer may be represented by Formula A: (SiO1.5—Y—SiO1.5)x(R3SiO1.5)y (A) wherein x and y may satisfy the following relations: x is about 0.05 to about 0.9, y is about 0.05 to about 0.9, and x+y=1, R3 may be a C1-C12 alkyl group, and Y may be a linking group including a substituted or unsubstituted, linear or branched C1-C20 alkyl group, a C1-C20 group containing a chain that includes an aromatic ring, a heterocyclic ring, a urea group or an isocyanurate group, or a C2-C20 group containing one or more multiple bonds.
摘要翻译：硬掩模组合物包括溶剂和有机硅共聚物。有机硅共聚物可以由式A表示：（SiO 1.5-Y-SiO 1.5）x（R 3 SiO 1.5）y（A）其中x和y可以满足以下关系：x为约0.05至约0.9，y 为约0.05至约0.9，x + y = 1，R 3可以是C 1 -C 12烷基，Y可以是包含取代或未取代的直链或支链C 1 -C 20烷基，C 1 -C 20 含有芳香环，杂环，脲基或异氰脲酸酯基的链或含有一个以上多重键的C2-C20基的基团。

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