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1. 发明授权

US09449851B2 Local doping of two-dimensional materials 有权
标题翻译：局部掺杂二维材料
公开(公告)号：US09449851B2
公开(公告)日：2016-09-20
申请号：US14833407
申请日：2015-08-24
申请人： Dillon Wong , Jairo Velasco, Jr. , Long Ju , Salman Kahn , Juwon Lee , Chad E. Germany , Alexander K. Zettl , Feng Wang , Michael F. Crommie
发明人： Dillon Wong , Jairo Velasco, Jr. , Long Ju , Salman Kahn , Juwon Lee , Chad E. Germany , Alexander K. Zettl , Feng Wang , Michael F. Crommie
IPC分类号： H01L21/20 , H01L21/326 , H01L21/479 , H01L21/225 , H01L29/16 , H01L21/02
CPC分类号： H01L21/326 , H01L21/02381 , H01L21/02488 , H01L21/02502 , H01L21/02527 , H01L21/02568 , H01L21/2254 , H01L21/2256 , H01L21/479 , H01L22/14 , H01L29/1606
摘要： This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.
摘要翻译：本公开提供了与局部掺杂二维（2D）材料有关的系统，方法和装置。在一个方面中，形成包括衬底，设置在衬底上的第一绝缘体，设置在第一绝缘体上的第二绝缘体和设置在第二绝缘体上的2D材料的组件。在2D材料和衬底之间施加第一电压。通过施加在2D材料和衬底之间的第一电压，在2D材料和位于2D材料附近的探针之间施加第二电压。去除2D材料和探头之间的第二电压。去除2D材料和衬底之间的第一电压。当施加第二电压时，靠近探针的2D材料的一部分与2D材料的其余部分具有不同的电子密度。

2. 发明申请

US20160064249A1 LOCAL DOPING OF TWO-DIMENSIONAL MATERIALS 有权
标题翻译：二维材料的局部抛光
公开(公告)号：US20160064249A1
公开(公告)日：2016-03-03
申请号：US14833407
申请日：2015-08-24
申请人： Dillon Wong , Jairo Velasco, JR. , Long Ju , Salman Kahn , Juwon Lee , Chad E. Germany , Alexander K. Zettl , Feng Wang , Michael F. Crommie
发明人： Dillon Wong , Jairo Velasco, JR. , Long Ju , Salman Kahn , Juwon Lee , Chad E. Germany , Alexander K. Zettl , Feng Wang , Michael F. Crommie
IPC分类号： H01L21/326 , H01L21/479 , H01L21/02
CPC分类号： H01L21/326 , H01L21/02381 , H01L21/02488 , H01L21/02502 , H01L21/02527 , H01L21/02568 , H01L21/2254 , H01L21/2256 , H01L21/479 , H01L22/14 , H01L29/1606
摘要： This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.
摘要翻译：本公开提供了与局部掺杂二维（2D）材料有关的系统，方法和装置。在一个方面中，形成包括衬底，设置在衬底上的第一绝缘体，设置在第一绝缘体上的第二绝缘体和设置在第二绝缘体上的2D材料的组件。在2D材料和衬底之间施加第一电压。通过施加在2D材料和衬底之间的第一电压，在2D材料和位于2D材料附近的探针之间施加第二电压。去除2D材料和探头之间的第二电压。去除2D材料和衬底之间的第一电压。当施加第二电压时，靠近探针的2D材料的一部分与2D材料的其余部分具有不同的电子密度。

3. 发明申请

US20110006837A1 Graphene Device, Method of Investigating Graphene, and Method of Operating Graphene Device 审中-公开
标题翻译：石墨烯装置，研究石墨烯的方法和操作石墨烯装置的方法
公开(公告)号：US20110006837A1
公开(公告)日：2011-01-13
申请号：US12792647
申请日：2010-06-02
申请人： Feng Wang , Yuanbo Zhang , Tsung-ta Tang , Michael F. Crommie , Alexander K. Zettl , Caglar Girit
发明人： Feng Wang , Yuanbo Zhang , Tsung-ta Tang , Michael F. Crommie , Alexander K. Zettl , Caglar Girit
IPC分类号： G05F3/02 , H01L29/66 , G01N21/00
CPC分类号： H01L29/1606 , H01L29/778 , H01L29/7831 , H01L29/78648 , H01L29/78684
摘要： The present invention provides for a graphene device comprising: a first gate structure, a second gate structure that is transparent or semi-transparent, and a bilayer graphene coupled to the first and second gate structures, the bilayer graphene situated at least partially between the first and second gate structures. The present invention also provides for a method of investigating semiconductor properties of bilayer graphene and a method of operating the graphene device by producing a bandgap of at least 50 mV within the bilayer graphene by using the graphene device.
摘要翻译：本发明提供一种石墨烯装置，其包括：第一栅极结构，透明或半透明的第二栅极结构和耦合到第一和第二栅极结构的双层石墨烯，所述双层石墨烯至少部分位于第一栅极结构和第二栅极结构。本发明还提供了一种研究双层石墨烯的半导体性质的方法以及通过使用石墨烯器件在双层石墨烯内产生至少50mV的带隙来操作石墨烯器件的方法。

4. 发明申请

US20130334501A1 Field-Effect P-N Junction 审中-公开
标题翻译：场效应P-N结
公开(公告)号：US20130334501A1
公开(公告)日：2013-12-19
申请号：US13607347
申请日：2012-09-07
申请人： William Regan , Steven Byrnes , Alexander K. Zettl , Feng Wang
发明人： William Regan , Steven Byrnes , Alexander K. Zettl , Feng Wang
IPC分类号： H01L31/0216 , H01L51/42
CPC分类号： H01L31/02168 , H01L31/0296 , H01L31/0322 , H01L31/0326 , H01L31/113 , H01L31/1136 , H01L51/428 , Y02E10/541 , Y02E10/549
摘要： Embodiments described herein provide a field-effect p-n junction. In some embodiments, the field-effect p-n junction includes (1) an ohmic contact, (2) a semiconductor layer above the ohmic contact, (3) at least one rectifying contact above the semiconductor layer, where the lateral width of the rectifying contact is less than the semiconductor depletion width of the semiconductor layer, and (4) a gate above the rectifying contact. In some embodiments, the field-effect p-n junction includes (1) an ohmic contact, (2) a semiconductor layer above the ohmic contact, (3) a thin top contact above the semiconductor layer, where the out of plane thickness of the thin top contact is less than the Debye screening length of the thin top contact, and (4) a gate above the thin top contact.
摘要翻译：本文描述的实施例提供场效应p-n结。在一些实施例中，场效应pn结包括（1）欧姆接触，（2）欧姆接触上方的半导体层，（3）半导体层上方的至少一个整流接触，其中整流接触的横向宽度小于半导体层的半导体耗尽宽度，（4）整流接点上方的栅极。在一些实施例中，场效应pn结包括（1）欧姆接触，（2）在欧姆接触之上的半导体层，（3）半导体层之上的薄顶部接触，其中薄的平面厚度顶部触点小于薄顶部触点的德拜屏蔽长度，（4）薄顶部触点上方的栅极。

5. 发明授权

US08717046B2 Nanotube resonator devices 有权
标题翻译：纳米管谐振器装置
公开(公告)号：US08717046B2
公开(公告)日：2014-05-06
申请号：US12681760
申请日：2008-09-03
申请人： Kenneth J. Jensen , Alexander K. Zettl , Jeffrey A. Weldon
发明人： Kenneth J. Jensen , Alexander K. Zettl , Jeffrey A. Weldon
IPC分类号： G01R27/04 , H03H9/24
CPC分类号： H03D1/02 , H03D3/34
摘要： A fully-functional radio receiver fabricated from a single nanotube is being disclosed. Simultaneously, a single nanotube can perform the functions of all major components of a radio: antenna, tunable band-pass filter, amplifier, and demodulator. A DC voltage source, as supplied by a battery, can power the radio. Using carrier waves in the commercially relevant 40-400 MHz range and both frequency and amplitude modulation techniques, successful music and voice reception has been demonstrated. Also disclosed are a radio transmitter and a mass sensor using a nanotube resonator device.
摘要翻译：公开了由单个纳米管制造的全功能无线电接收机。同时，单个纳米管可以执行无线电的所有主要部件的功能：天线，可调谐带通滤波器，放大器和解调器。由电池提供的直流电压源可为无线电供电。在商业上相关的40-400MHz范围内使用载波以及频率和幅度调制技术，已经证明了成功的音乐和语音接收。还公开了使用纳米管谐振器装置的无线电发射机和质量传感器。

6. 发明授权

US08703023B2 Functionalized boron nitride nanotubes 有权
标题翻译：官能化氮化硼纳米管
公开(公告)号：US08703023B2
公开(公告)日：2014-04-22
申请号：US13527369
申请日：2012-06-19
申请人： Toby Sainsbury , Takashi Ikuno , Alexander K. Zettl
发明人： Toby Sainsbury , Takashi Ikuno , Alexander K. Zettl
IPC分类号： H01B1/20
CPC分类号： C01B21/064 , B82Y30/00 , C01B21/0648 , C01P2002/82 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/13 , C01P2006/22
摘要： A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.
摘要翻译：已经使用等离子体处理来改变BNNT的表面。在一个实例中，BNNT的表面已经使用氨等离子体进行了修饰以包括胺官能团。胺官能化允许BNNTs可溶于氯仿，以前是不可能的。还已经证明了胺官能化的BNNT与硫醇封端的有机分子的进一步官能化。金纳米颗粒已经在溶液中在胺和硫醇官能化的氮化硼纳米管（BNNT）的表面处自组装。这种方法构成了高度官能化的BNNTs的制备和作为纳米尺度模板用于与其他纳米级材料组装和集成的基础。

7. 发明授权

US08674134B2 Oligomer functionalized nanotubes and composites formed therewith 有权
标题翻译：低聚官能化纳米管及其形成的复合材料
公开(公告)号：US08674134B2
公开(公告)日：2014-03-18
申请号：US13162422
申请日：2011-06-16
申请人： Alexander K. Zettl , Toby Sainsbury , Jean M. J. Fréchet
发明人： Alexander K. Zettl , Toby Sainsbury , Jean M. J. Fréchet
IPC分类号： C07C233/65 , B82Y40/00 , B82Y30/00
CPC分类号： C07C233/65 , B82Y30/00 , B82Y40/00 , C07C211/44 , C07C233/80 , C08J5/005 , C08J2377/06
摘要： Disclosed herein is a sequential functionalization methodology for the covalent modification of nanotubes with between one and four repeat units of a polymer. Covalent attachment of oligomer units to the surface of nanotubes results in oligomer units forming an organic sheath around the nanotubes, polymer-functionalized-nanotubes (P-NTs). P-NTs possess chemical functionality identical to that of the functionalizing polymer, and thus provide nanoscale scaffolds which may be readily dispersed within a monomer solution and participate in the polymerization reaction to form a polymer-nanotube/polymer composite. Formation of polymer in the presence of P-NTs leads to a uniform dispersion of nanotubes within the polymer matrix, in contrast to aggregated masses of nanotubes in the case of pristine-NTs. The covalent attachment of oligomeric units to the surface of nanotubes represents the formation of a functional nanoscale building block which can be readily dispersed and integrated within the polymer to form a novel composite material.
摘要翻译：本文公开了用聚合物的一至四个重复单元共价修饰纳米管的顺序官能化方法。寡聚体单元与纳米管表面的共价连接导致形成纳米管周围的有机鞘的低聚物单元，聚合物官能化的纳米管（P-NT）。 P-NT具有与官能化聚合物相同的化学功能，因此提供纳米级支架，其可以容易地分散在单体溶液中并参与聚合反应以形成聚合物 - 纳米管/聚合物复合材料。在存在P-NT的情况下，聚合物的形成导致纳米管在聚合物基质内的均匀分散，与原始NT的情况下的纳米管的聚集体相反。低聚单元与纳米管表面的共价连接代表形成功能性纳米级结构单元，其可以容易地分散并整合在聚合物内以形成新的复合材料。

8. 发明授权

US08567249B2 Nanomechanical resonance detector 有权
标题翻译：纳米机械共振检测器
公开(公告)号：US08567249B2
公开(公告)日：2013-10-29
申请号：US12543359
申请日：2009-08-18
申请人： Jeffrey C. Grossman , Alexander K. Zettl
发明人： Jeffrey C. Grossman , Alexander K. Zettl
IPC分类号： G01H13/00
CPC分类号： G01H13/00
摘要： An embodiment of a nanomechanical frequency detector includes a support structure and a plurality of elongated nanostructures coupled to the support structure. Each of the elongated nanostructures has a particular resonant frequency. The plurality of elongated nanostructures has a range of resonant frequencies. An embodiment of a method of identifying an object includes introducing the object to the nanomechanical resonance detector. A resonant response by at least one of the elongated nanostructures of the nanomechanical resonance detector indicates a vibrational mode of the object. An embodiment of a method of identifying a molecular species of the present invention includes introducing the molecular species to the nanomechanical resonance detector. A resonant response by at least one of the elongated nanostructures of the nanomechanical resonance detector indicates a vibrational mode of the molecular species.
摘要翻译：纳米机械频率检测器的实施例包括支撑结构和耦合到支撑结构的多个细长纳米结构。每个细长的纳米结构具有特定的谐振频率。多个细长纳米结构具有一定范围的谐振频率。识别物体的方法的实施例包括将物体引入纳米机械共振检测器。通过纳米机械共振检测器的至少一个细长纳米结构的共振响应表示物体的振动模式。识别本发明的分子种类的方法的实施方案包括将分子种类引入纳米机械共振检测器。通过纳米机械共振检测器的至少一个细长纳米结构的共振响应指示分子种类的振动模式。

9. 发明申请

US20120118551A1 Heat Transfer Interface And Method Of Improving Heat Transfer 审中-公开
标题翻译：传热接口及改善传热的方法
公开(公告)号：US20120118551A1
公开(公告)日：2012-05-17
申请号：US13255876
申请日：2010-03-08
申请人： Alexander K. Zettl
发明人： Alexander K. Zettl
IPC分类号： F28F7/00 , B21D53/02
CPC分类号： F28F13/185 , F24S20/20 , F24S70/20 , Y02E10/41 , Y10T29/4935
摘要： An embodiment of a heat transfer interface includes a solid material having first and second surfaces, and a nanotube forest covering at least a portion of the first surface, In operation in a heat exchanger, the heat transfer interface transmits heat from a first side to a second side of the heat transfer interface. An embodiment of a method of improving heat transfer in a heat exchanger includes applying a nanotube forest to a heat transfer surface of a heat transfer interface and installing the heat transfer interface in the heat exchanger.
摘要翻译：传热界面的实施例包括具有第一表面和第二表面的固体材料和覆盖第一表面的至少一部分的纳米管森林。在热交换器中操作时，热传递界面将热量从第一侧传递到传热接口的第二面。改进热交换器中的热传递的方法的一个实施例包括将纳米管森林应用于传热界面的传热表面，并将传热界面安装在热交换器中。

10. 发明授权

US07863798B2 Nanocrystal powered nanomotor 有权
标题翻译：纳米晶纳米电机
公开(公告)号：US07863798B2
公开(公告)日：2011-01-04
申请号：US11229935
申请日：2005-09-19
申请人： Brian C. Regan , Alexander K. Zettl , Shaul Aloni
发明人： Brian C. Regan , Alexander K. Zettl , Shaul Aloni
IPC分类号： H02N11/00 , H02N1/04
CPC分类号： B81B3/0021 , B81B2201/038 , B82Y15/00 , B82Y30/00 , Y10S977/725 , Y10S977/733 , Y10S977/752 , Y10T117/1004
摘要： A nanoscale nanocrystal which may be used as a reciprocating motor is provided, comprising a substrate having an energy differential across it, e.g. an electrical connection to a voltage source at a proximal end; an atom reservoir on the substrate distal to the electrical connection; a nanoparticle ram on the substrate distal to the atom reservoir; a nanolever contacting the nanoparticle ram and having an electrical connection to a voltage source, whereby a voltage applied between the electrical connections on the substrate and the nanolever causes movement of atoms between the reservoir and the ram. Movement of the ram causes movement of the nanolever relative to the substrate. The substrate and nanolever preferably comprise multiwalled carbon nanotubes (MWNTs) and the atom reservoir and nanoparticle ram are preferably metal (e.g. indium) deposited as small particles on the MWNTs. The substrate may comprise a silicon chip that has been fabricated to provide the necessary electrodes and other electromechanical structures, and further supports an atomic track, which may comprise an MWNT.
摘要翻译：提供了可用作往复式电动机的纳米级纳米晶体，其包括具有跨过其的能量差异的衬底。在近端处与电压源的电连接; 基板远离电连接的原子储存器; 位于原子储存器远端的衬底上的纳米颗粒柱塞; 纳米级接触纳米颗粒柱塞并且具有与电压源的电连接，由此施加在衬底上的电连接和纳米器之间的电压引起原子在储存器和柱塞之间的移动。柱塞的移动导致纳米级器件相对于衬底的移动。衬底和纳米棒优选地包括多壁碳纳米管（MWNT），并且原子储存器和纳米颗粒柱塞优选是作为小颗粒沉积在MWNT上的金属（例如铟）。衬底可以包括硅芯片，其被制造成提供必要的电极和其它机电结构，并且还支持可以包括MWNT的原子轨道。

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