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1. 发明授权

US5935320A Process for producing silicon semiconductor wafers with low defect density 失效
标题翻译：具有低缺陷密度的硅半导体晶片的制造方法
公开(公告)号：US5935320A
公开(公告)日：1999-08-10
申请号：US918843
申请日：1997-08-26
申请人： Dieter Graef , Wilfried Von Ammon , Reinhold Wahlich , Peter Krottenthaler , Ulrich Lambert
发明人： Dieter Graef , Wilfried Von Ammon , Reinhold Wahlich , Peter Krottenthaler , Ulrich Lambert
IPC分类号： C30B29/06 , C30B13/00 , C30B15/00 , C30B33/02 , H01L21/322 , H01L21/324
CPC分类号： C30B15/00 , C30B13/00 , C30B29/06 , Y10S117/916
摘要： A process for producing silicon wafers with low defect density is one wherein a) a silicon single crystal having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 is produced by molten material being solidified to form a single crystal and is then cooled, and the holding time of the single crystal during cooling in the temperature range of from 850.degree. C. to 1100.degree. C. is less than 80 minutes; b) the single crystal is processed to form silicon wafers; and c) the silicon wafers are annealed at a temperature of at least 1000.degree. C. for at least one hour. Also, it is possible to prepare a silicon single crystal based upon having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 and a nitrogen doping concentration of at least 1*10.sup.14 /cm.sup.3 for (a) above.
摘要翻译：一种制造低缺陷密度的硅晶片的方法是其中a）通过熔融材料固化形成单晶并且然后冷却而产生具有至少4×10 17 / cm 3的氧掺杂浓度的硅单晶，然后冷却在850℃至1100℃的温度范围内的冷却期间单晶的保持时间小于80分钟; b）处理单晶以形成硅晶片; 和c）将硅晶片在至少1000℃的温度下退火至少1小时。此外，可以基于上述（a）的氧掺杂浓度至少为4×10 17Ω/ cm 3和氮掺杂浓度为至少1×10 14 / cm 3来制备硅单晶。

2. 发明授权

US08323403B2 SOI wafer and method for producing it 有权
标题翻译： SOI晶片及其制造方法
公开(公告)号：US08323403B2
公开(公告)日：2012-12-04
申请号：US12016225
申请日：2008-01-18
申请人： Dieter Graef , Markus Blietz , Reinhold Wahlich , Alfred Miller , Dirk Zemke
发明人： Dieter Graef , Markus Blietz , Reinhold Wahlich , Alfred Miller , Dirk Zemke
IPC分类号： C30B29/06
CPC分类号： H01L21/76254 , C30B15/00 , C30B15/20 , C30B29/06 , H01L21/3226
摘要： An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G
摘要翻译： SOI晶片由载体晶片和厚度小于500nm的单晶硅层构成，在硅层的整个体积中存在过量的间隙硅原子。可以通过Czochralski硅单晶生长制备SOI晶片，在整个晶体截面处在结晶前沿满足条件v / G <（v / G）crit = 1.3×10 -3 cm 2 /（K·min），结果是在所生成的硅单晶中存在过量的间隙硅原子; 从该硅单晶分离至少一个施主晶片，将施主晶片与载体晶片的接合以及施主晶片的厚度的减小，结果是厚度小于500nm的硅层与载体晶片残留。

3. 发明申请

US20080153259A1 SOI WAFER AND METHOD FOR PRODUCING IT 有权
标题翻译： SOI WAFER及其生产方法
公开(公告)号：US20080153259A1
公开(公告)日：2008-06-26
申请号：US12016225
申请日：2008-01-18
申请人： Dieter Graef , Markus Blietz , Reinhold Wahlich , Alfred Miller , Dirk Zemke
发明人： Dieter Graef , Markus Blietz , Reinhold Wahlich , Alfred Miller , Dirk Zemke
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , C30B15/00 , C30B15/20 , C30B29/06 , H01L21/3226
摘要： An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G
摘要翻译： SOI晶片由载体晶片和厚度小于500nm的单晶硅层构成，在硅层的整个体积中存在过量的间隙硅原子。 SOI晶片可以通过Czochralski硅单晶生长制备，条件v / G <（V / G） = 1.3×10 -3 cm 2 在整个晶体截面上在结晶前沿实现/SUP>/(K.min），结果产生的硅单晶中存在过量的间隙硅原子; 从该硅单晶分离至少一个施主晶片，将施主晶片与载体晶片的接合以及施主晶片的厚度减小，结果是厚度小于500nm的硅层与载体晶片残留。

4. 发明授权

US5352637A Process for producing storage-stable silicon wafer surfaces having advantageous oxidation properties and silicon wafer fored thereby 失效
标题翻译：由此制造具有有利氧化性能的储存稳定的硅晶片表面和硅晶片的工艺
公开(公告)号：US5352637A
公开(公告)日：1994-10-04
申请号：US961083
申请日：1992-10-14
申请人： Laszlo Fabry , Manfred Grundner , Dieter Graef , Susanne Bauer-Mayer , Peter John
发明人： Laszlo Fabry , Manfred Grundner , Dieter Graef , Susanne Bauer-Mayer , Peter John
IPC分类号： H01L21/02 , H01L21/312 , H01L21/316 , H01L21/302
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/02312 , H01L21/3121 , H01L21/31662 , Y10S438/974
摘要： A process for producing silicon wafers which have a storage-stable surface and which can be thermally oxidized directly, that is to say, without a prior HF immersion bath, and without the addition of halogen-containing gases, it being possible to achieve an equal or better oxidation result than that achieved by including these measures.
摘要翻译：一种生产具有储存稳定表面并且可以直接热氧化的硅晶片的方法，也就是说，没有先前的HF浸渍浴，并且不加入含卤素的气体，可以实现相等或比通过包括这些措施实现的更好的氧化结果。

5. 发明授权

US4739929A Fuel injection valve 失效
标题翻译：燃油喷射阀
公开(公告)号：US4739929A
公开(公告)日：1988-04-26
申请号：US905517
申请日：1986-09-09
申请人： Burkhard Brandner , Dieter Graef , Klaus Wenzlik
发明人： Burkhard Brandner , Dieter Graef , Klaus Wenzlik
IPC分类号： F02M51/00 , F02M51/06 , B05B3/14 , F16K31/02
CPC分类号： F02M51/0603 , F02M51/005
摘要： A fuel injection valve having a piezoceramic valve body, comprising a plurality of superposed ceramic plates each having one conductor layer on each side and voltage leads to the conductor layers. Each ceramic plate is arranged on a carrier plate. Between each unit, consisting of a ceramic plate and a carrier plate, an insulating foil is provided with conductor foils arranged on each side as conductor layers. Each insulating foil comprises two terminal lugs. Each insulating foil, in the region of a terminal lug, is laminated on one side with one conductor foil. The correlated termial lugs are connected in each case to an electrical contact for the correlated conductor foils.
摘要翻译：一种具有压电陶瓷阀体的燃料喷射阀，包括多个叠置的陶瓷板，每个陶瓷板在每一侧具有一个导体层，并且电压通向导体层。每个陶瓷板布置在承载板上。在由陶瓷板和承载板组成的每个单元之间，绝缘箔设置有作为导体层设置在每一侧的导体箔。每个绝缘箔包括两个接线片。在端子片的区域中的每个绝缘箔在一侧层叠有一个导体箔。相关联的接线片在每种情况下连接到相关导体箔的电接触。

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