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    • 6. 发明申请
    • ELECTRONIC DEVICE AND METHOD FOR PRODUCING THE SAME
    • 电子设备及其制造方法
    • US20090075407A1
    • 2009-03-19
    • US12274977
    • 2008-11-20
    • Ryuichiro MaruyamaMasafumi AtaMasashi Shiraishi
    • Ryuichiro MaruyamaMasafumi AtaMasashi Shiraishi
    • H01L21/66
    • H01L51/0595B82Y10/00H01L51/0048H01L51/0508Y10S977/762Y10S977/936Y10S977/938Y10S977/949
    • A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).
    • 微电子器件及其制造方法可以克服由碳分子构成的已知电子器件的缺点,能够提供优于已知器件的性能。 绝缘栅场效应晶体管包括具有外半导体碳纳米管层(1)的多壁碳纳米管(10)和被外半导体碳纳米管层部分覆盖的内金属碳纳米管层(2) 1)。 金属源电极(3)和金属漏电极(5)与半导体碳纳米管层(1)的两端接触,同时金属栅电极(4)与金属碳纳米管层 2)。 将半导体碳纳米管层(1)与金属碳纳米管层(2)之间的间隔用作栅极绝缘层。 包含外半导体碳纳米管层(1)和内金属碳纳米管层(2)的两层选自多壁碳纳米管的碳纳米管层。 这些层被加工成适合用作多壁碳纳米管(10)的形式。
    • 7. 发明授权
    • Electronic device and method for producing the same
    • 电子装置及其制造方法
    • US07790539B2
    • 2010-09-07
    • US12274977
    • 2008-11-20
    • Ryuichiro MaruyamaMasafumi AtaMasashi Shiraishi
    • Ryuichiro MaruyamaMasafumi AtaMasashi Shiraishi
    • H01L21/336
    • H01L51/0595B82Y10/00H01L51/0048H01L51/0508Y10S977/762Y10S977/936Y10S977/938Y10S977/949
    • A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).
    • 微电子器件及其制造方法可以克服由碳分子构成的已知电子器件的缺点,能够提供优于已知器件的性能。 绝缘栅场效应晶体管包括具有外半导体碳纳米管层(1)的多壁碳纳米管(10)和被外半导体碳纳米管层部分覆盖的内金属碳纳米管层(2) 1)。 金属源电极(3)和金属漏电极(5)与半导体碳纳米管层(1)的两端接触,同时金属栅电极(4)与金属碳纳米管层 2)。 将半导体碳纳米管层(1)与金属碳纳米管层(2)之间的间隔用作栅极绝缘层。 包含外半导体碳纳米管层(1)和内金属碳纳米管层(2)的两层选自多壁碳纳米管的碳纳米管层。 这些层被加工成适合用作多壁碳纳米管(10)的形式。
    • 8. 发明授权
    • Electronic device and its manufacturing method
    • 电子器件及其制造方法
    • US07719032B2
    • 2010-05-18
    • US10535927
    • 2003-11-05
    • Ryuichiro MaruyamaMasafumi AtaMasashi Shiraishi
    • Ryuichiro MaruyamaMasafumi AtaMasashi Shiraishi
    • H01L21/00
    • H01L51/0595B82Y10/00H01L51/0048H01L51/0508Y10S977/762Y10S977/936Y10S977/938Y10S977/949
    • A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).
    • 微电子器件及其制造方法可以克服由碳分子构成的已知电子器件的缺点,能够提供优于已知器件的性能。 绝缘栅场效应晶体管包括具有外半导体碳纳米管层(1)的多壁碳纳米管(10)和被外半导体碳纳米管层部分覆盖的内金属碳纳米管层(2) 1)。 金属源电极(3)和金属漏电极(5)与半导体碳纳米管层(1)的两端接触,同时金属栅电极(4)与金属碳纳米管层 2)。 将半导体碳纳米管层(1)与金属碳纳米管层(2)之间的间隔用作栅极绝缘层。 包含外半导体碳纳米管层(1)和内金属碳纳米管层(2)的两层选自多壁碳纳米管的碳纳米管层。 这些层被加工成适合用作多壁碳纳米管(10)的形式。
    • 9. 发明申请
    • Electronic device and it's manufacturing method
    • 电子设备及其制造方法
    • US20060205105A1
    • 2006-09-14
    • US10535927
    • 2003-11-05
    • Ryuichiro MaruyamaMasafumi AtaMasashi Shiraishi
    • Ryuichiro MaruyamaMasafumi AtaMasashi Shiraishi
    • H01L21/00
    • H01L51/0595B82Y10/00H01L51/0048H01L51/0508Y10S977/762Y10S977/936Y10S977/938Y10S977/949
    • A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).
    • 微电子器件及其制造方法可以克服由碳分子构成的已知电子器件的缺点,能够提供优于已知器件的性能。 绝缘栅场效应晶体管包括具有外半导体碳纳米管层(1)的多壁碳纳米管(10)和被外半导体碳纳米管层部分覆盖的内金属碳纳米管层(2) 1)。 金属源电极(3)和金属漏电极(5)与半导体碳纳米管层(1)的两端接触,同时金属栅电极(4)与金属碳纳米管层 2)。 将半导体碳纳米管层(1)与金属碳纳米管层(2)之间的间隔用作栅极绝缘层。 包含外半导体碳纳米管层(1)和内金属碳纳米管层(2)的两层选自多壁碳纳米管的碳纳米管层。 这些层被加工成适合用作多壁碳纳米管(10)的形式。