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1. 发明授权

US10180627B2 Processes for photolithography 有权
公开(公告)号：US10180627B2
公开(公告)日：2019-01-15
申请号：US12795997
申请日：2010-06-08
申请人： Deyan Wang , George G. Barclay , Thomas A. Estelle , Kenneth J. Spizuoco , Doris Kang
发明人： Deyan Wang , George G. Barclay , Thomas A. Estelle , Kenneth J. Spizuoco , Doris Kang
IPC分类号： G03F7/11 , G03F7/38 , H01L21/027 , G03F7/039 , G03F7/20 , G03F7/32
摘要： New lithographic processing methods are provided which are particularly useful in immersion lithography schemes. In one aspect, processes of the invention comprise: applying on a substrate a photoresist composition; exposing the photoresist layer to radiation activating for the photoresist composition; removing a portion but not all of the exposed photoresist layer; and developing the treated photoresist layer to provide a photoresist relief image.

2. 发明申请

US20110003257A1 PROCESSES FOR PHOTOLITHOGRAPHY 审中-公开
标题翻译：光刻技术
公开(公告)号：US20110003257A1
公开(公告)日：2011-01-06
申请号：US12795997
申请日：2010-06-08
申请人： Deyan Wang , George G. Barclay , Thomas A. Estelle , Kenneth J. Spizuoco , Doris Kang
发明人： Deyan Wang , George G. Barclay , Thomas A. Estelle , Kenneth J. Spizuoco , Doris Kang
IPC分类号： G03F7/20
CPC分类号： G03F7/38 , G03F7/0392 , G03F7/11 , G03F7/2041 , G03F7/325 , H01L21/0274
摘要： New lithographic processing methods are provided which are particularly useful in immersion lithography schemes. In one aspect, processes of the invention comprise: applying on a substrate a photoresist composition; exposing the photoresist layer to radiation activating for the photoresist composition; removing a portion but not all of the exposed photoresist layer; and developing the treated photoresist layer to provide a photoresist relief image.
摘要翻译：提供了新的光刻处理方法，其在浸没式光刻方案中特别有用。在一个方面，本发明的方法包括：在基底上施加光致抗蚀剂组合物; 将光致抗蚀剂层暴露于用于光致抗蚀剂组合物的辐射活化; 去除一部分而不是全部暴露的光致抗蚀剂层; 并显影经处理的光致抗蚀剂层以提供光刻胶浮雕图像。

3. 发明申请

US20130001088A1 LEVELER COMPOUNDS 有权
标题翻译：水平化合物
公开(公告)号：US20130001088A1
公开(公告)日：2013-01-03
申请号：US13609267
申请日：2012-09-11
申请人： Deyan Wang , Robert D. Mikkola , George G. Barclay
发明人： Deyan Wang , Robert D. Mikkola , George G. Barclay
IPC分类号： C25D3/38 , C25D7/00 , C25D3/02
CPC分类号： C25D3/38 , C25D3/02 , C25D3/40 , C25D7/12 , C25D7/123 , H05K3/423
摘要： Leveling agents for metal plating baths are provided. Plating baths containing such leveling agents provide metal deposits having substantially level surfaces. Such leveling agents may be selected to selectively incorporate desired levels of impurities into the metal deposit.
摘要翻译：提供金属电镀浴的流平剂。含有这种流平剂的镀浴提供具有基本水平表面的金属沉积物。可以选择这种流平剂以选择性地将期望水平的杂质掺入到金属沉积物中。

4. 发明申请

US20080193872A1 Compositions and processes for immersion lithography 有权
标题翻译：浸没光刻的组成和工艺
公开(公告)号：US20080193872A1
公开(公告)日：2008-08-14
申请号：US11978910
申请日：2007-10-30
申请人： Stefan J. Caporale , George G. Barclay , Deyan Wang , Li Jia
发明人： Stefan J. Caporale , George G. Barclay , Deyan Wang , Li Jia
IPC分类号： G03F7/004 , G03F7/00
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials having a water contact angle that can be changed by treatment with base and/or one or more materials that comprise fluorinated photoacid-labile groups and/or one or more materials that comprise acidic groups spaced from a polymer backbone. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。本发明优选的光致抗蚀剂组合物包含具有水接触角的一种或多种材料，其可以通过用碱和/或一种或多种包含氟化光致酸不稳定基团的材料和/或一种或多种包含酸性基团间隔的材料来自聚合物骨架。本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

5. 发明授权

US09507260B2 Compositions and processes for photolithography 有权
标题翻译：光刻的组成和工艺
公开(公告)号：US09507260B2
公开(公告)日：2016-11-29
申请号：US12592160
申请日：2009-11-19
申请人： Deyan Wang , Chunyi Wu , Cheng-Bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cheng-Bai Xu , George G. Barclay
IPC分类号： G03F7/039 , G03F7/20 , G03F7/004 , G03F7/038 , G03F7/11 , G03F7/075
CPC分类号： G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/0757 , G03F7/11 , G03F7/2041
摘要： New photoresist compositions are provided that are useful for immersion lithography. In one preferred aspect, photoresist composition are provided that comprise: (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。在一个优选的方面，提供光致抗蚀剂组合物，其包含：（i）一种或多种包含光酸不稳定基团的树脂，（ii）光活性组分，和（iii）一种或多种包含光致酸不稳定基团并且是不同的从一种或多种树脂; 其中所述一种或多种材料的光致酸不稳定基团的去保护活化能大约等于或低于所述一种或多种树脂的光致酸不稳定基团的去保护活化能。在另一个优选的方面，提供光致抗蚀剂组合物，其包含（i）一种或多种树脂，（ii）光活性组分，和（iii）一种或多种包含足够量的酸性基团以提供暗场溶解速率的材料每秒至少一埃。

6. 发明申请

US20090139873A1 Leveler compounds 有权
公开(公告)号：US20090139873A1
公开(公告)日：2009-06-04
申请号：US12322090
申请日：2009-01-29
申请人： Deyan Wang , Robert D. Mikkola , Chunyi Wu , George G. Barclay
发明人： Deyan Wang , Robert D. Mikkola , Chunyi Wu , George G. Barclay
IPC分类号： C25D3/38 , C08L63/10
CPC分类号： C25D3/38 , H01L21/2885 , H05K3/423
摘要： Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.

7. 发明申请

US20090117489A1 Compositons and processes for immersion lithography 有权
标题翻译：浸入式光刻的组合物和工艺
公开(公告)号：US20090117489A1
公开(公告)日：2009-05-07
申请号：US12290980
申请日：2008-11-05
申请人： Deyan Wang , Cheng-Bai Xu , George G. Barclay
发明人： Deyan Wang , Cheng-Bai Xu , George G. Barclay
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/2041 , C08F220/22 , C08F220/24 , C08F220/26 , G03F7/0046 , G03F7/038 , G03F7/0392 , G03F7/0757 , H01L21/0274
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。本发明优选的光致抗蚀剂组合物包含两种或多种不同的材料，其可以与抗蚀剂的树脂组分基本上不可混合。本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

8. 发明授权

US10359698B2 Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography 有权
公开(公告)号：US10359698B2
公开(公告)日：2019-07-23
申请号：US12592156
申请日：2009-11-19
申请人： Deyan Wang , Cheng-Bai Xu , George G. Barclay
发明人： Deyan Wang , Cheng-Bai Xu , George G. Barclay
IPC分类号： G03F7/004 , G03F7/20 , G03F7/038 , G03F7/039
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises one or more materials that have hetero-substituted carbocyclic aryl groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

9. 发明授权

US09244355B2 Compositions and processes for immersion lithography 有权
标题翻译：浸没光刻的组成和工艺
公开(公告)号：US09244355B2
公开(公告)日：2016-01-26
申请号：US11978910
申请日：2007-10-30
申请人： Stefan J. Caporale , George G. Barclay , Deyan Wang , Li Jia
发明人： Stefan J. Caporale , George G. Barclay , Deyan Wang , Li Jia
IPC分类号： G03F7/26 , G03F7/004 , G03F7/20 , G03F7/039 , G03F7/038
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials having a water contact angle that can be changed by treatment with base and/or one or more materials that comprise fluorinated photoacid-labile groups and/or one or more materials that comprise acidic groups spaced from a polymer backbone. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。本发明优选的光致抗蚀剂组合物包含具有水接触角的一种或多种材料，其可以通过用碱和/或一种或多种包含氟化光致酸不稳定基团的材料和/或一种或多种包含酸性基团间隔的材料来自聚合物骨架。本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

10. 发明授权

US09005880B2 Compositions comprising sulfonamide material and processes for photolithography 有权
标题翻译：包含磺酰胺材料的组合物和用于光刻的方法
公开(公告)号：US09005880B2
公开(公告)日：2015-04-14
申请号：US12592159
申请日：2009-11-19
申请人： Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
发明人： Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
IPC分类号： G03F7/20 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/075
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0048 , G03F7/0382 , G03F7/039 , G03F7/0392 , G03F7/0757
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。本发明优选的光致抗蚀剂组合物包含一种或多种具有磺酰胺取代基的材料。本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

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