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    • 9. 发明授权
    • Voltage source and memory-voltage switch in a memory chip
    • 存储器芯片中的电压源和存储器 - 电压开关
    • US5841724A
    • 1998-11-24
    • US873445
    • 1997-06-12
    • Mark S. EbelRobert Shen
    • Mark S. EbelRobert Shen
    • G11C5/14G11C7/00
    • G11C5/143
    • A circuit for connecting a memory cell matrix to voltage sources includes a voltage sensor responsive to the voltage levels of a first voltage source and of a second voltage source by producing a sense signal, and a voltage source coupler connected between the memory cell matrix and the voltage sensor. When the first voltage source voltage level is greater than a predetermined threshold voltage level, the sense signal causes the voltage source coupler to drive the first voltage source voltage level into the memory cell matrix. When the first voltage source voltage level falls to the threshold voltage level, the sense signal also causes the voltage source coupler to drive the second voltage source voltage level into the memory cell matrix to sustain memory cell data.
    • 用于将存储单元矩阵连接到电压源的电路包括响应于第一电压源的电压电平和通过产生感测信号的第二电压源的电压电平的电压传感器,以及连接在存储单元矩阵和 电压传感器 当第一电压源电压电平大于预定阈值电压电平时,感测信号使电压源耦合器将第一电压源电压电平驱动到存储单元矩阵中。 当第一电压源电压电平下降到阈值电压电平时,感测信号也使电压源耦合器将第二电压源电压电平驱动到存储单元矩阵中以维持存储单元数据。