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1. 发明申请

US20080157270A1 Metal to Metal Low-K Antifuse 审中-公开
标题翻译：金属与金属Low-K防腐剂
公开(公告)号：US20080157270A1
公开(公告)日：2008-07-03
申请号：US11618757
申请日：2006-12-30
申请人： Deok-kee Kim , Anil K. Chinthakindi , Son Van Nguyen , Kelly Malone , Byeongju Park
发明人： Deok-kee Kim , Anil K. Chinthakindi , Son Van Nguyen , Kelly Malone , Byeongju Park
IPC分类号： H01L29/00
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/00
摘要： The embodiments of the invention generally relate to fuse and anti-fuse structures and include a copper conductor positioned within a substrate and a metal cap on the first conductor. A low-k dielectric is on the substrate and the metal cap. A tantalum nitride resistor is on the dielectric, and the resistor is positioned above the metal cap such that an antifuse element region of the dielectric is positioned between the resistor and the metal cap. The antifuse element region of the dielectric is adapted to change resistance values by application of a voltage difference between the resistor and the copper conductor/metal cap. The antifuse element region has a first higher resistance (more closely matching an insulator) before application of the voltage and a second lower resistance (more closely matching a conductor) after application of such voltage. In one embodiment herein the voltage can be supplemented by heating through application of voltage through the first conductor which helps change the resistance of the antifuse element region.
摘要翻译：本发明的实施例一般涉及熔丝和反熔丝结构，并且包括定位在基板内的铜导体和第一导体上的金属盖。低k电介质位于基板和金属盖上。电介质上的氮化钽电阻器，电阻器位于金属帽的上方，使得电介质的反熔丝元件区域位于电阻器和金属帽之间。电介质的反熔丝元件区域适于通过施加电阻器和铜导体/金属帽之间的电压差来改变电阻值。在施加电压之后，反熔丝元件区域具有第一高电阻（更紧密地匹配绝缘体）和施加电压之后的第二较低电阻（更接近地匹配导体）。在本文的一个实施例中，可以通过施加通过第一导体的电压进行加热来补充电压，这有助于改变反熔丝元件区域的电阻。

2. 发明申请

US20080157268A1 Fuse Element Using Low-K Dielectric 审中-公开
标题翻译：使用低K电介质的保险丝元件
公开(公告)号：US20080157268A1
公开(公告)日：2008-07-03
申请号：US11618749
申请日：2006-12-30
申请人： Deok-kee Kim , Anil K. Chinthakindi , Kelly Malone , Son Van Nguyen , Byeongju Park
发明人： Deok-kee Kim , Anil K. Chinthakindi , Kelly Malone , Son Van Nguyen , Byeongju Park
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A programmable structure such as a write once read many (WORM) or one time programmable read only memories (OTPROM) is disclosed herein. The structure includes a first conductor (such as copper) positioned within a substrate and a metal cap on the first conductor. A low-k dielectric is on the substrate and the metal cap. A tantalum nitride resistor is on the dielectric, and the resistor is positioned above the metal cap such that a programmable region of the dielectric is positioned between the resistor and the metal cap. The first conductor (including the metal cap), the programmable region of the dielectric, and the resistor form a metal-insulator-metal capacitor. Further, the programmable region of the dielectric is adapted to be permanently changed from heat produced by the resistor when a voltage difference is applied to the first and second ends of the resistor, respectively, through the first and second contacts. Thus, the capacitor comprises a first capacitance before the programmable region is permanently changed by the heat from the resistor and comprises a second capacitance after the programmable region is permanently changed by the heat from the resistor.
摘要翻译：这里公开了诸如一次写入一次读取（WORM）或一次可编程只读存储器（OTPROM）的可编程结构。该结构包括位于基板内的第一导体（例如铜）和第一导体上的金属盖。低k电介质位于基板和金属盖上。电介质上有一个氮化钽电阻器，电阻器位于金属帽的上方，使电介质的可编程区域位于电阻器和金属帽之间。第一导体（包括金属盖），电介质的可编程区域和电阻器形成金属 - 绝缘体 - 金属电容器。此外，电介质的可编程区域分别适用于当通过第一和第二触点将电压差分别施加到电阻器的第一和第二端时由电阻器产生的热量永久地改变。因此，电容器包括在可编程区域被来自电阻器的热量永久地变化之前的第一电容，并且在可编程区域被来自电阻器的热量永久地改变之后包括第二电容。

3. 发明申请

US20090065761A1 PROGRAMMABLE FUSE/NON-VOLATILE MEMORY STRUCTURES IN BEOL REGIONS USING EXTERNALLY HEATED PHASE CHANGE MATERIAL 有权
标题翻译：使用外部加热相变材料在BEOL区域可编程保险丝/非易失性存储器结构
公开(公告)号：US20090065761A1
公开(公告)日：2009-03-12
申请号：US11850742
申请日：2007-09-06
申请人： Kuang-Neng Chen , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Chung Hon Lam , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park , Sampath Purushothaman
发明人： Kuang-Neng Chen , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Chung Hon Lam , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park , Sampath Purushothaman
IPC分类号： H01L47/00 , H01L21/82
CPC分类号： H01L23/5256 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.
摘要翻译：可编程相变材料（PCM）结构包括形成在半导体器件的BEOL级的加热器元件，BEOL级包括其中的低K电介质材料; 与加热器元件的第一端电接触的第一通孔和与加热器元件的第二端电接触的第二通孔，从而限定通过第一通孔，加热元件和第二通孔的编程电流通路通过; 设置在所述加热器元件上方的PCM元件，所述PCM元件被配置为通过使用通过所述加热器元件的编程电流在较低电阻结晶状态和较高电阻非晶态之间被编程; 以及与PCM元件电接触的第三通孔，从而限定穿过第三通孔，PCM元件，加热器元件和第二通孔的感测电流路径。

4. 发明申请

US20080217733A1 ELECTRICAL FUSE STRUCTURE FOR HIGHER POST-PROGRAMMING RESISTANCE 失效
标题翻译：用于更高后编程电阻的电熔丝结构
公开(公告)号：US20080217733A1
公开(公告)日：2008-09-11
申请号：US11683071
申请日：2007-03-07
申请人： Subramanian S. Iyer , Deok-Kee Kim , Chandrasekara Kothandaraman , Byeongju Park
发明人： Subramanian S. Iyer , Deok-Kee Kim , Chandrasekara Kothandaraman , Byeongju Park
IPC分类号： H01L23/58
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an electrical fuse structure for achieving a post-programming resistance distribution with higher resistance values and to enhance the reliability of electrical fuse programming. A partly doped electrical fuse structure with undoped semiconductor material in the cathode combined with P-doped semiconductor material in the fuselink and anode is disclosed and the data supporting the superior performance of the disclosed electrical fuse is shown.
摘要翻译：本发明提供一种用于实现具有更高电阻值的后编程电阻分布并提高电熔丝编程的可靠性的电熔丝结构。公开了在阴极中与掺杂了P掺杂的半导体材料结合在阴极中的未掺杂半导体材料的部分掺杂的电熔丝结构，并且示出了所公开的电熔丝的优异性能的数据。

5. 发明申请

US20080217658A1 ELECTRICAL ANTIFUSE WITH INTEGRATED SENSOR 有权
标题翻译：集成传感器的电气防护
公开(公告)号：US20080217658A1
公开(公告)日：2008-09-11
申请号：US11683075
申请日：2007-03-07
申请人： Deok-kee Kim , Hoki Kim , Chandrasekharan Kothandaraman , Byeongju Park , John M. Safran
发明人： Deok-kee Kim , Hoki Kim , Chandrasekharan Kothandaraman , Byeongju Park , John M. Safran
IPC分类号： H01L27/10 , H01L29/00
CPC分类号： H01L27/112 , H01L23/5252 , H01L27/101 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The present invention provides structures for antifuses that utilize electromigration for programming. By providing a portion of antifuse link with high resistance without conducting material and then by inducing electromigration of the conducting material into the antifuse link, the resistance of the antifuse structure is changed. By providing a terminal on the antifuse link, the change in the electrical properties of the antifuse link is detected and sensed. Also disclosed are an integrated antifuse with a built-in sensing device and a two dimensional array of integrated antifuses that can share programming transistors and sensing circuitry.
摘要翻译：本发明提供了利用电迁移进行编程的反熔丝的结构。通过在没有导电材料的情况下提供具有高电阻的一部分反熔丝连接，然后通过将导电材料电迁移到反熔丝连接中，反熔丝结构的电阻改变。通过在反熔丝链路上设置端子，检测和感测反熔丝连接的电特性的变化。还公开了具有内置感测装置的集成反熔丝和可共享编程晶体管和感测电路的集成反熔丝的二维阵列。

6. 发明授权

US07411818B1 Programmable fuse/non-volatile memory structures using externally heated phase change material 有权
标题翻译：使用外部加热相变材料的可编程保险丝/非易失性存储器结构
公开(公告)号：US07411818B1
公开(公告)日：2008-08-12
申请号：US11672110
申请日：2007-02-07
申请人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
发明人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
IPC分类号： G11C11/00
CPC分类号： H01L27/2436 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
摘要翻译：可编程相变材料（PCM）结构包括形成在半导体器件的晶体管栅极级处的加热器元件，所述加热器元件还包括通过细线结构相对于电极连接的一对电极，所述加热器元件被配置为接收通过其中的编程电流，设置在细线结构的一部分顶部的相变材料层以及被配置为感测相变材料的电阻的感测电路。

7. 发明申请

US20070284693A1 ELECTRICALLY PROGRAMMABLE FUSE WITH ASYMMETRIC STRUCTURE 审中-公开
标题翻译：具有非对称结构的电气可编程保险丝
公开(公告)号：US20070284693A1
公开(公告)日：2007-12-13
申请号：US11423181
申请日：2006-06-09
申请人： Deok-Kee Kim , Byeongju Park
发明人： Deok-Kee Kim , Byeongju Park
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An electrically programmable fuse is provided which includes a cathode, an anode, and a fuse link conductively connecting the cathode to the anode. The cathode, the anode and the fuse link each have a length in a direction of current between the anode and cathode. Each of the cathode, the anode and the fuse link also has a width in a direction transverse to the respective length. At a cathode junction where the cathode meets the fuse link, the width of the fuse link decreases substantially and abruptly relative to the width of the cathode. The width of the fuse link increases only gradually in a direction towards an anode junction where the fuse link meets the anode.
摘要翻译：提供了电可编程保险丝，其包括阴极，阳极和将阴极导电连接到阳极的熔断体。阴极，阳极和熔断体在阳极和阴极之间的电流方向上具有长度。阴极，阳极和熔丝链中的每一个也在横向于相应长度的方向上具有宽度。在阴极与熔丝连接的阴极结处，熔丝链的宽度相对于阴极的宽度基本上急剧下降。熔丝链的宽度仅在熔丝链接到阳极的阳极结的方向上逐渐增加。

8. 发明授权

US07745855B2 Single crystal fuse on air in bulk silicon 有权
标题翻译：单晶保险丝在散装硅中的空气中
公开(公告)号：US07745855B2
公开(公告)日：2010-06-29
申请号：US11867268
申请日：2007-10-04
申请人： William K. Henson , Deok-Kee Kim , Chandrasekharan Kothandaraman , Byeongju Park
发明人： William K. Henson , Deok-Kee Kim , Chandrasekharan Kothandaraman , Byeongju Park
IPC分类号： H01L27/10
CPC分类号： H01L23/5256 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： An integrated eFUSE device is formed by forming a silicon “floating beam” on air, whereupon the fusible portion of the eFUSE device resides. This beam extends between two larger, supporting terminal structures. “Undercutting” techniques are employed whereby a structure is formed atop a buried layer, and that buried layer is removed by selective etching. Whereby a “floating” silicide eFUSE conductor is formed on a silicon beam structure. In its initial state, the eFUSE silicide is highly conductive, exhibiting low electrical resistance (the “unblown state of the eFUSE). When a sufficiently large current is passed through the eFUSE conductor, localized heating occurs. This heating causes electromigration of the silicide into the silicon beam (and into surrounding silicon, thereby diffusing the silicide and greatly increasing its electrical resistance. When the current source is removed, the silicide remains permanently in this diffused state, the “blown” state of the eFUSE.
摘要翻译：通过在空气中形成硅“浮动光束”形成集成eFUSE装置，于是eFUSE装置的可熔部分驻留。该梁在两个较大的支撑端子结构之间延伸。采用“底切”技术，由此在掩埋层顶部形成结构，并且通过选择性蚀刻去除掩埋层。由此在硅梁结构上形成“浮动”硅化物eFUSE导体。在其初始状态下，eFUSE硅化物具有高导电性，表现出低电阻（eFUSE的未吹出状态）。当足够大的电流通过eFUSE导体时，发生局部加热。这种加热导致硅化物的电迁移到硅束（并进入周围的硅，从而扩散硅化物，并大大增加其电阻。当电流源被去除时，硅化物永久地保持在这种扩散状态，“吹”状态 eFUSE。

9. 发明授权

US07723820B2 Transistor based antifuse with integrated heating element 失效
标题翻译：具有集成加热元件的基于晶体管的反熔丝
公开(公告)号：US07723820B2
公开(公告)日：2010-05-25
申请号：US11616965
申请日：2006-12-28
申请人： Deok-kee Kim , Byeongju Park , John M. Safran
发明人： Deok-kee Kim , Byeongju Park , John M. Safran
IPC分类号： H01L29/00
CPC分类号： H01L23/5252 , G11C17/16 , G11C17/18 , H01L27/105 , H01L27/112 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides structures for an integrated antifuse that incorporates an integrated sensing transistor with an integrated heater. Two terminals connected to the upper plate allow the heating of the upper plate, accelerating the breakdown of the antifuse dielectric at a lower bias voltage. Part of the upper plate also serves as the gate of the integrated sensing transistor. The antifuse dielectric serves as the gate dielectric of the integrated transistor. The lower plate comprises a channel, a drain, and a source of a transistor. While intact, the integrated sensing transistor allows a passage of transistor current through the drain. When programmed, the antifuse dielectric, which is the gate of the integrated transistor, is subjected to a gate breakdown, shorting the gate to the channel and resulting in a decreased drain current. The integrated antifuse structure can also be wired in an array to provide a compact OTP memory array.
摘要翻译：本发明提供了一种集成反熔丝的结构，该结构集成了具有集成加热器的集成感测晶体管。连接到上板的两个端子允许上板的加热，加速在更低偏压下的反熔丝电介质的击穿。上板的一部分也用作集成感测晶体管的栅极。反熔丝电介质用作集成晶体管的栅极电介质。下板包括晶体管的沟道，漏极和源极。虽然完整，集成感测晶体管允许晶体管电流通过漏极。当编程时，作为集成晶体管的栅极的反熔丝电介质受到栅极击穿，使栅极短路到沟道并导致漏极电流降低。集成的反熔丝结构也可以以阵列布线，以提供紧凑的OTP存储器阵列。

10. 发明授权

US07633079B2 Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material 有权
标题翻译：使用外部加热相变材料的BEOL区域可编程保险丝/非易失性存储器结构
公开(公告)号：US07633079B2
公开(公告)日：2009-12-15
申请号：US11850742
申请日：2007-09-06
申请人： Kuang-Neng Chen , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns , Byeongju Park , Sampath Purushothaman
发明人： Kuang-Neng Chen , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns , Byeongju Park , Sampath Purushothaman
IPC分类号： H01L47/00
CPC分类号： H01L23/5256 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.
摘要翻译：可编程相变材料（PCM）结构包括形成在半导体器件的BEOL级的加热器元件，BEOL级包括其中的低K电介质材料; 与加热器元件的第一端电接触的第一通孔和与加热器元件的第二端电接触的第二通孔，从而限定通过第一通孔，加热元件和第二通孔的编程电流通路通过; 设置在所述加热器元件上方的PCM元件，所述PCM元件被配置为通过使用通过所述加热器元件的编程电流在较低电阻结晶状态和较高电阻非晶态之间被编程; 以及与PCM元件电接触的第三通孔，从而限定穿过第三通孔，PCM元件，加热器元件和第二通孔的感测电流路径。

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