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1. 发明申请

US20130237007A1 TRENCH PROCESS AND STRUCTURE FOR BACKSIDE CONTACT SOLAR CELLS WITH POLYSILICON DOPED REGIONS 有权
标题翻译：背景接触太阳能电池与多晶硅区域的工艺和结构
公开(公告)号：US20130237007A1
公开(公告)日：2013-09-12
申请号：US13872961
申请日：2013-04-29
申请人： Denis DE CEUSTER , Peter John COUSINS , David D. SMITH
发明人： Denis DE CEUSTER , Peter John COUSINS , David D. SMITH
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/02008 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/028 , H01L31/035272 , H01L31/035281 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.
摘要翻译：太阳能电池包括在诸如硅晶片的衬底的背面上的多晶硅P型和N型掺杂区域。中断的沟槽结构在一些位置中将P型掺杂区域与N型掺杂区域分离，但是允许P型掺杂区域和N型掺杂区域在其它位置接触。 P型和N型掺杂区中的每一个可以形成在薄的电介质层上。除了其它优点之外，所得的太阳能电池结构允许提高效率，同时具有相对较低的反向击穿电压。

2. 发明申请

US20110059571A1 Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions 有权
标题翻译：背面接触太阳能电池与多晶硅掺杂区域的沟槽工艺和结构
公开(公告)号：US20110059571A1
公开(公告)日：2011-03-10
申请号：US12945555
申请日：2010-11-12
申请人： Denis DE CEUSTER , Peter John COUSINS , David D. SMITH
发明人： Denis DE CEUSTER , Peter John COUSINS , David D. SMITH
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/02008 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/028 , H01L31/035272 , H01L31/035281 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.
摘要翻译：太阳能电池包括在诸如硅晶片的衬底的背面上的多晶硅P型和N型掺杂区域。中断的沟槽结构在一些位置中将P型掺杂区域与N型掺杂区域分离，但是允许P型掺杂区域和N型掺杂区域在其它位置接触。 P型和N型掺杂区中的每一个可以形成在薄的电介质层上。除了其它优点之外，所得的太阳能电池结构允许提高效率，同时具有相对较低的反向击穿电压。

3. 发明申请

US20090308438A1 Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions 有权
标题翻译：背面接触太阳能电池与多晶硅掺杂区域的沟槽工艺和结构
公开(公告)号：US20090308438A1
公开(公告)日：2009-12-17
申请号：US12392923
申请日：2009-02-25
申请人： Denis DE CEUSTER , Peter John COUSINS , David D. SMITH
发明人： Denis DE CEUSTER , Peter John COUSINS , David D. SMITH
IPC分类号： H01L31/00 , H01L31/0352
CPC分类号： H01L31/0682 , H01L31/02008 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/028 , H01L31/035272 , H01L31/035281 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.
摘要翻译：太阳能电池包括在诸如硅晶片的衬底的背面上的多晶硅P型和N型掺杂区域。中断的沟槽结构在一些位置中将P型掺杂区域与N型掺杂区域分离，但是允许P型掺杂区域和N型掺杂区域在其它位置接触。 P型和N型掺杂区中的每一个可以形成在薄的电介质层上。除了其它优点之外，所得的太阳能电池结构允许提高效率，同时具有相对较低的反向击穿电压。

4. 发明申请

US20100307562A1 Preventing Harmful Polarization Of Solar Cells 审中-公开
标题翻译：防止太阳能电池有害极化
公开(公告)号：US20100307562A1
公开(公告)日：2010-12-09
申请号：US12845627
申请日：2010-07-28
申请人： Richard M. SWANSON , Denis DE CEUSTER , Vikas DESAI , Douglas H. ROSE , David D. SMITH , Neil KAMINAR
发明人： Richard M. SWANSON , Denis DE CEUSTER , Vikas DESAI , Douglas H. ROSE , David D. SMITH , Neil KAMINAR
IPC分类号： H01L31/042
CPC分类号： H02S40/32 , H01L31/02167 , H01L31/02168 , H01L31/022466 , H01L31/048 , H01L31/049 , H01L31/0504 , H01L31/0516 , H01L31/18 , H02J3/383 , H02J3/46 , H02S30/10 , H02S40/36 , Y02B10/12 , Y02B10/14 , Y02E10/52 , Y02E10/547 , Y10T29/49117
摘要： In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.
摘要翻译：在一个实施例中，通过提供将电荷从太阳能电池的正面向电池片散出的导电路径来防止或最小化有害的太阳能电池极化。导电路径可以包括例如在抗反射涂层的顶表面或底表面上形成的电介质钝化层中的图案化孔，导电抗反射涂层或导电材料层。也可以通过偏置太阳能电池正面上的太阳能电池模块的区域来防止有害的太阳能电池极化。

5. 发明申请

US20120204926A1 PROCESS AND STRUCTURES FOR FABRICATION OF SOLAR CELLS 有权
标题翻译：太阳能电池制造的工艺和结构
公开(公告)号：US20120204926A1
公开(公告)日：2012-08-16
申请号：US13028059
申请日：2011-02-15
申请人： Gabriel HARLEY , David D. SMITH , Tim DENNIS , Ann WALDHAUER , Taeseok KIM , Peter John COUSINS
发明人： Gabriel HARLEY , David D. SMITH , Tim DENNIS , Ann WALDHAUER , Taeseok KIM , Peter John COUSINS
IPC分类号： H01L31/042 , H01L31/0224 , H01L31/0232 , H01L31/0256
CPC分类号： H01L31/02168 , H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.
摘要翻译：通过激光烧蚀形成太阳能电池的接触孔，以适应各种太阳能电池设计。通过用具有基本上均匀的厚度的膜代替在扩散区上形成的膜来促进使用激光来形成接触孔。接触孔可以形成到深扩散区域，以增加激光烧蚀过程边缘。可以调整激光器配置以通过不同厚度的介电膜形成接触孔。

6. 发明申请

US20130048067A1 HIGH THROUGHPUT LASER ABLATION PROCESSES AND STRUCTURES FOR FORMING CONTACT HOLES IN SOLAR CELLS 有权
标题翻译：用于在太阳能电池中形成接触孔的高通量激光吸收过程和结构
公开(公告)号：US20130048067A1
公开(公告)日：2013-02-28
申请号：US13298136
申请日：2011-11-16
申请人： Taeseok KIM , Gabriel HARLEY , David D. SMITH , Peter John COUSINS
发明人： Taeseok KIM , Gabriel HARLEY , David D. SMITH , Peter John COUSINS
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , Y02E10/547 , Y02P70/521
摘要： Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Throughput of the solar cell ablation process is improved by incorporating linear base diffusion regions with narrow width, for example as compared to an overlying metal contact. Throughput of the solar cell ablation process may also be improved by having contact holes to base diffusion regions that are perpendicular to contact holes to emitter diffusion regions. To allow for continuous laser scanning, a laser blocking layer may be located over an interlayer dielectric to prevent contact hole formation on certain regions, such as regions where a metal contact of one polarity may electrically shunt to a diffusion region of opposite polarity. In a hybrid design, a solar cell may have both linear and dotted base diffusion regions. An electro-optical modulator may be employed to allow for continuous laser scanning in dotted base diffusion designs.
摘要翻译：通过激光烧蚀形成太阳能电池的接触孔，以适应各种太阳能电池设计。通过结合具有窄宽度的线性基极扩散区域，例如与覆盖的金属接触相比，改善了太阳能电池烧蚀过程的吞吐量。通过将与接触孔垂直的基底扩散区域的接触孔设置到发射极扩散区，也可以改善太阳能电池烧蚀过程的吞吐量。为了允许连续激光扫描，激光阻挡层可以位于层间电介质上方，以防止在某些区域（例如一个极性的金属接触可以电分流到相反极性的扩散区域的区域）上的接触孔形成。在混合设计中，太阳能电池可以具有线性和点状的基极扩散区域。可以使用电光调制器来允许在虚点扩散设计中的连续激光扫描。

7. 发明申请

US20130240029A1 TRENCH PROCESS AND STRUCTURE FOR BACKSIDE CONTACT SOLAR CELLS WITH POLYSILICON DOPED REGIONS 有权
公开(公告)号：US20130240029A1
公开(公告)日：2013-09-19
申请号：US13893005
申请日：2013-05-13
申请人： David D. SMITH
发明人： David D. SMITH
IPC分类号： H01L31/0352
CPC分类号： H01L31/0682 , H01L31/02008 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/028 , H01L31/035272 , H01L31/035281 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

8. 发明申请

US20110312119A1 ETCHING OF SOLAR CELL MATERIALS 审中-公开
标题翻译：太阳能电池材料的蚀刻
公开(公告)号：US20110312119A1
公开(公告)日：2011-12-22
申请号：US13220974
申请日：2011-08-30
申请人： Douglas H. ROSE , Pongsthorn URALWONG , David D. SMITH
发明人： Douglas H. ROSE , Pongsthorn URALWONG , David D. SMITH
IPC分类号： H01L31/02
CPC分类号： H01L31/022425 , H01L31/02008 , H01L31/18
摘要： A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etch® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.
摘要翻译：通过蚀刻其一个或多个层而不基本上蚀刻太阳能电池的另一层来制造太阳能电池。在一个实施例中，蚀刻太阳能电池中的铜层而基本上不蚀刻包含锡的最顶层金属层。例如，可以使用包含硫酸和过氧化氢的蚀刻剂来蚀刻对锡层有选择性的铜层。上述蚀刻剂的一个具体实例是改性为包含约1体积％的硫酸，约4体积％的磷酸和约2体积％的稳定的过氧化氢的Co-Bra Etch蚀刻剂。在一个实施例中，蚀刻太阳能电池中的铝层而基本上不蚀刻锡层。例如，可以使用包含氢氧化钾的蚀刻剂来蚀刻铝层而基本上不蚀刻锡层。

9. 发明申请

US20110003423A1 Trench Process And Structure For Backside Contact Solar Cells With Polysilicon Doped Regions 有权
标题翻译：背面接触多孔掺杂太阳能电池的沟槽工艺和结构
公开(公告)号：US20110003423A1
公开(公告)日：2011-01-06
申请号：US12879847
申请日：2010-09-10
申请人： David D. SMITH
发明人： David D. SMITH
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/02008 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/028 , H01L31/035272 , H01L31/035281 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.
摘要翻译：太阳能电池包括在诸如硅晶片的衬底的背面上的多晶硅P型和N型掺杂区域。沟槽结构将P型掺杂区域与N型掺杂区域分离。 P型和N型掺杂区中的每一个可以形成在薄的电介质层上。沟槽结构可以包括用于增加太阳辐射收集的纹理表面。除了其它优点之外，所得到的结构通过在相邻的P型和N型掺杂区域之间提供隔离来提高效率，从而防止在掺杂区域将被触摸的空间电荷区域中的复合。

10. 发明申请

US20120276685A1 BACKSIDE CONTACT SOLAR CELL WITH FORMED POLYSILICON DOPED REGIONS 有权
标题翻译：背面联系太阳能电池与形成多晶硅的区域
公开(公告)号：US20120276685A1
公开(公告)日：2012-11-01
申请号：US13547405
申请日：2012-07-12
申请人： David D. SMITH
发明人： David D. SMITH
IPC分类号： H01L31/18
CPC分类号： H01L31/182 , H01L31/02363 , H01L31/0682 , H01L31/1872 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a backside of a solar cell substrate (e.g., silicon wafer). The polysilicon layer has a relatively large average grain size to reduce or eliminate recombination in a space charge region between the P-type and N-type doped regions, thereby increasing efficiency.
摘要翻译：太阳能电池包括在多晶硅层的邻接部分中邻接的P型和N型掺杂区域。多晶硅层可以形成在形成在太阳能电池基板（例如，硅晶片）的背面上的薄介电层上。多晶硅层具有相对大的平均晶粒尺寸以减少或消除P型和N型掺杂区域之间的空间电荷区域中的复合，从而提高效率。

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