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    • 2. 发明授权
    • Reflection-type optoelectronic semiconductor device
    • 反射型光电半导体器件
    • US07259401B2
    • 2007-08-21
    • US10923025
    • 2004-08-23
    • Daw-Heng WongHung-Yuan Su
    • Daw-Heng WongHung-Yuan Su
    • H01L29/22H01L29/24
    • H01L33/60H01L25/0753H01L2224/48091H01L2224/48247H01L2924/00014H01L2924/00
    • A reflection-type optoelectronic semiconductor device has an LED chip disposed on a first conducting wire portion, a second conducting wire portion connected to the LED chip via a connection wire, a packaging body for sealing the LED chip and part of the first conducting wire portion and the second conducting wire portion, a reflecting face disposed in an opposite direction of a light emission face of the LED chip and surrounding the packaging body, and an optical spectrum conversion layer coated onto the packaging body. A primary light emitted by the LED chip is reflected to the optical spectrum conversion layer by the reflecting face to undergo light excitation for producing a secondary light. The primary light and the secondary light are combined to generate a mixed light. A lens can be placed in the travel direction of the mixed light to change the distribution of the mixed light.
    • 反射型光电子半导体器件具有设置在第一导线部分上的LED芯片,经由连接线连接到LED芯片的第二导线部分,用于密封LED芯片的封装体和第一导线部分的一部分 所述第二导线部,与所述LED芯片的发光面相反的方向配置并包围所述封装体的反射面以及涂覆在所述封装体上的光谱转换层。 由LED芯片发射的初级光被反射面反射到光谱转换层,以进行用于产生二次光的光激发。 初级光和次级光被组合以产生混合光。 可以将透镜放置在混合光的行进方向上以改变混合光的分布。