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1. 发明授权

US08679734B2 Photoresist removal 有权
标题翻译：光刻胶去除
公开(公告)号：US08679734B2
公开(公告)日：2014-03-25
申请号：US13568790
申请日：2012-08-07
申请人： David W. Minsek , Melissa K. Rath , David D. Bernhard , Thomas H. Baum
发明人： David W. Minsek , Melissa K. Rath , David D. Bernhard , Thomas H. Baum
IPC分类号： G03F7/42 , B08B3/04
CPC分类号： C11D3/30 , C11D1/72 , C11D3/044 , C11D3/3947 , C11D3/3955 , C11D3/3956 , C11D3/43 , C11D7/06 , C11D7/3209 , C11D7/3281 , C11D7/34 , C11D7/50 , C11D11/0047 , C23G1/20 , G03F7/423 , G03F7/425 , H01L21/02052 , H01L21/0206 , H01L21/31116 , H01L21/31133 , Y10S438/906
摘要： Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
摘要翻译：本文公开了一种用于半导体处理的组合物和方法。在一个实施方案中，提供了用于去除光致抗蚀剂的湿清洁组合物。组合物包含强碱; 氧化剂和极性溶剂。在另一个实施例中，提供了一种去除光刻胶的方法。该方法包括以下步骤：施加包含约0.1至约30重量％的强碱的湿清洁组合物; 约1到约30重量％的氧化剂; 约20至约95重量％的极性溶剂; 并去除光致抗蚀剂。

2. 发明申请

US20080242574A1 Metal and Dielectric Compatible Sacrificial Anti-Reflective Coating Cleaning and Removal Composition 有权
标题翻译：金属和电介质兼容的牺牲防反射涂层清洁和去除组合物
公开(公告)号：US20080242574A1
公开(公告)日：2008-10-02
申请号：US11916891
申请日：2006-06-07
申请人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , David W. Minsek
发明人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , David W. Minsek
IPC分类号： G03F7/42
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/10 , C11D7/261 , C11D7/263 , C11D7/265 , C11D7/28 , C11D7/34 , C11D7/50 , G03F7/423
摘要： A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.
摘要翻译：一种液体去除组合物和从其上具有其的基材去除牺牲抗反射涂层（SARC）材料的方法。液体去除组合物包括至少一种含氟化物的化合物，至少一种有机溶剂，任选的水和任选的至少一种螯合剂。该组合物在集成电路的制造中至少部分去除SARC材料，同时对基板上的金属物质（例如铝，铜和钴合金）进行最小蚀刻，并且不损坏在半导体结构中使用的低k电介质材料。

3. 发明申请

US20090215659A1 COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI-REFLECTION COATINGS 有权
标题翻译：用于去除蚀刻后胶片和底漆抗反射涂层的组合物
公开(公告)号：US20090215659A1
公开(公告)日：2009-08-27
申请号：US11813497
申请日：2006-01-09
申请人： David W. Minsek , Weihua Wang , David D. Bernhard , Thomas H. Baum , Melissa K. Rath
发明人： David W. Minsek , Weihua Wang , David D. Bernhard , Thomas H. Baum , Melissa K. Rath
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , G03F7/091
摘要： An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
摘要翻译：一种水性组合物和从其上具有其的微电子器件去除硬化的光致抗蚀剂和/或底部抗反射涂层（BARC）材料的方法。水基组合物包括至少一种离液序列溶质，至少一种碱性碱和去离子水。组合物在集成电路的制造中实现了高效去除硬化的光致抗蚀剂和/或BARC材料，而不会对衬底（例如铜）上的金属物质产生不利影响，并且不损害在微电子器件结构中使用的低k电介质材料。

4. 发明授权

US08951948B2 Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition 有权
标题翻译：金属和电介质兼容的牺牲抗反射涂层清洗和去除组成
公开(公告)号：US08951948B2
公开(公告)日：2015-02-10
申请号：US11916891
申请日：2006-06-07
申请人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , David W. Minsek
发明人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , David W. Minsek
IPC分类号： C11D7/32 , G03F7/42 , C11D3/20 , C23G1/06
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/10 , C11D7/261 , C11D7/263 , C11D7/265 , C11D7/28 , C11D7/34 , C11D7/50 , G03F7/423
摘要： A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.
摘要翻译：一种液体去除组合物和从其上具有其的基材去除牺牲抗反射涂层（SARC）材料的方法。液体去除组合物包括至少一种含氟化物的化合物，至少一种有机溶剂，任选的水和任选的至少一种螯合剂。该组合物在集成电路的制造中至少部分去除SARC材料，同时对基板上的金属物质（例如铝，铜和钴合金）进行最小蚀刻，并且不损坏在半导体结构中使用的低k电介质材料。

5. 发明授权

US07994108B2 Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings 有权
标题翻译：用于去除蚀刻后光致抗蚀剂和底部防反射涂层的组合物
公开(公告)号：US07994108B2
公开(公告)日：2011-08-09
申请号：US11813497
申请日：2006-01-09
申请人： David W. Minsek , Weihua Wang , David D. Bernhard , Thomas H. Baum , Melissa K. Rath
发明人： David W. Minsek , Weihua Wang , David D. Bernhard , Thomas H. Baum , Melissa K. Rath
IPC分类号： G03F7/32
CPC分类号： G03F7/425 , G03F7/091
摘要： An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
摘要翻译：一种水性组合物和从其上具有其的微电子器件去除硬化的光致抗蚀剂和/或底部抗反射涂层（BARC）材料的方法。水基组合物包括至少一种离液序列溶质，至少一种碱性碱和去离子水。组合物在集成电路的制造中实现了高效去除硬化的光致抗蚀剂和/或BARC材料，而不会对衬底（例如铜）上的金属物质产生不利影响，并且不损害在微电子器件结构中使用的低k电介质材料。

6. 发明申请

US20090118153A1 METALS COMPATIBLE POST-ETCH PHOTORESIST REMOVER AND/OR SACRIFICIAL ANTIREFLECTIVE COATING ETCHANT 有权
标题翻译：金属兼容后蚀刻光刻胶去除剂和/或杀真菌抗反射涂层
公开(公告)号：US20090118153A1
公开(公告)日：2009-05-07
申请号：US12090213
申请日：2006-10-12
申请人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , Ping Jiang , Renjie Zhou , Michael B. Korzenski
发明人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , Ping Jiang , Renjie Zhou , Michael B. Korzenski
IPC分类号： C11D3/26 , C11D3/02
CPC分类号： C11D3/26 , C09D9/04 , C11D3/30 , C11D3/3773 , C11D3/43 , C11D7/32 , C11D7/3209 , C11D11/0047 , C23G1/20 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/3212
摘要： A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
摘要翻译：一种液体去除组合物和用于从其上具有其的微电子器件去除光致抗蚀剂和/或牺牲抗反射涂层（SARC）材料的方法。液体去除组合物包括至少一种有机季碱和至少一种表面相互作用增强添加剂。组合物在集成电路的制造中至少部分去除光致抗蚀剂和/或SARC材料，其中微电子器件（例如铜和钴）上的金属物质的蚀刻最小，并且不损坏微电子器件中使用的低k电介质材料设备架构。

7. 发明授权

US08058219B2 Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant 有权
标题翻译：金属相容的蚀刻后光刻胶去除剂和/或牺牲抗反射涂层蚀刻剂
公开(公告)号：US08058219B2
公开(公告)日：2011-11-15
申请号：US12090213
申请日：2006-10-12
申请人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , Ping Jiang , Renjie Zhou , Michael B. Korzenski
发明人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , Ping Jiang , Renjie Zhou , Michael B. Korzenski
IPC分类号： C11D3/39
CPC分类号： C11D3/26 , C09D9/04 , C11D3/30 , C11D3/3773 , C11D3/43 , C11D7/32 , C11D7/3209 , C11D11/0047 , C23G1/20 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/3212
摘要： A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
摘要翻译：一种液体去除组合物和用于从其上具有其的微电子器件去除光致抗蚀剂和/或牺牲抗反射涂层（SARC）材料的方法。液体去除组合物包括至少一种有机季碱和至少一种表面相互作用增强添加剂。组合物在集成电路的制造中至少部分去除光致抗蚀剂和/或SARC材料，其中微电子器件（例如铜和钴）上的金属物质的蚀刻最小，并且不损坏微电子器件中使用的低k电介质材料设备架构。

8. 发明授权

US08338087B2 Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate 有权
标题翻译：用于蚀刻后去除沉积在基底上的光致抗蚀剂和/或牺牲抗反射材料的组合物和方法
公开(公告)号：US08338087B2
公开(公告)日：2012-12-25
申请号：US10792038
申请日：2004-03-03
申请人： Melissa K. Rath , David D. Bernhard , David Minsek , Michael B. Korzenski , Thomas H. Baum
发明人： Melissa K. Rath , David D. Bernhard , David Minsek , Michael B. Korzenski , Thomas H. Baum
IPC分类号： G03F7/32 , G03F7/42
CPC分类号： C11D3/044 , C11D3/30 , C11D3/3947 , C11D7/06 , C11D11/0047 , G03F7/423 , G03F7/425
摘要： A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.
摘要翻译：用于从其上具有这种材料的基材去除光致抗蚀剂和/或牺牲抗反射涂层（SARC）材料的组合物和方法。组合物包括碱性组分，例如与碱金属或碱土金属碱组合的季铵碱，或与氧化剂组合的强碱。该组合物可以在水性介质中使用，例如与螯合剂，表面活性剂和/或共溶剂物质一起使用，以在集成电路的制造中实现高效去除光致抗蚀剂和/或SARC材料，而不会对金属物质产生不利影响在基底上，例如铜，铝和/或钴合金，并且不损坏在半导体结构中使用的SiOC基电介质材料。

9. 发明申请

US20090032766A1 COMPOSITION AND METHOD FOR SELECTIVELY ETCHING GATE SPACER OXIDE MATERIAL 审中-公开
标题翻译：选择蚀刻间隔氧化物材料的组合物和方法
公开(公告)号：US20090032766A1
公开(公告)日：2009-02-05
申请号：US12089346
申请日：2006-10-04
申请人： Martha M. Rajaratnam , David D. Bernhard , David W. Minsek
发明人： Martha M. Rajaratnam , David D. Bernhard , David W. Minsek
IPC分类号： C09K13/00
CPC分类号： H01L21/31111 , H01L21/28052 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A gate spacer oxide material removal composition and process for at least partial removal of gate spacer oxide material from a microelectronic device having same thereon. The anhydrous removal composition includes at least one organic solvent, at least one chelating agent, a base fluoride:acid fluoride component, and optionally at least one passivator. The composition achieves the selective removal of gate spacer oxide material relative to polysilicon and silicon nitride from the vicinity of the gate electrode on the surface of the microelectronic device with minimal etching of metal silicide interconnect material species employed in the gate electrode architecture.
摘要翻译：一种栅间隔氧化物材料去除组合物和用于从其上具有其的微电子器件至少部分去除栅极间隔物氧化物材料的工艺。无水去除组合物包括至少一种有机溶剂，至少一种螯合剂，氟化氟化物：氟化氢成分和任选的至少一种钝化剂。该组合物通过在栅电极结构中使用的金属硅化物互连材料物质的最小蚀刻，实现了在微电子器件的表面上从栅电极附近相对于多晶硅和氮化硅选择性去除栅间隔物氧化物材料。

10. 发明申请

US20090212021A1 COMPOSITIONS AND METHODS FOR SELECTIVE REMOVAL OF METAL OR METAL ALLOY AFTER METAL SILICIDE FORMATION 审中-公开
标题翻译：金属硅化物形成后选择性去除金属或金属合金的组合物和方法
公开(公告)号：US20090212021A1
公开(公告)日：2009-08-27
申请号：US11917453
申请日：2006-06-13
申请人： David D. Bernhard , Weihua Wang , Thomas H. Baum
发明人： David D. Bernhard , Weihua Wang , Thomas H. Baum
IPC分类号： B44C1/22 , C09K13/00 , C09K13/06 , C09K13/08
CPC分类号： H01L21/32134 , C23F1/26 , C23F1/28
摘要： An aqueous metal etching composition useful for removal of metals such as nickel, cobalt, titanium, tungsten, and alloys thereof, after formation of metal silicides via rapid thermal annealing during complementary metal-oxide-semiconductor (CMOS) transistor fabrication. The aqueous metal etching composition is also useful for selective removal of metal silicides and/or metal nitrides for wafer re-work. In one formulation, the aqueous metal etching composition contains oxalic acid, and a chloride-containing compound, and in other formulations, the composition contains an oxidizer, such as hydrogen peroxide, and a fluoride source, e.g., borofluoric acid. The composition in another specific formulation contains borofluoric acid and boric acid for effective etching of nickel, cobalt, titanium, tungsten, metal alloys, metal silicides and metal nitrides, without attacking the dielectric and the substrate.
摘要翻译：在互补金属氧化物半导体（CMOS）晶体管制造中通过快速热退火形成金属硅化物之后，可用于去除诸如镍，钴，钛，钨及其合金的金属的含水金属蚀刻组合物。含水金属蚀刻组合物还可用于选择性去除金属硅化物和/或金属氮化物用于晶片再加工。在一种配方中，含水金属蚀刻组合物含有草酸和含氯化合物，并且在其它配方中，该组合物含有氧化剂，例如过氧化氢和氟化物源，例如硼氟酸。另一具体制剂中的组合物含有硼氟酸和硼酸，用于有效地蚀刻镍，钴，钛，钨，金属合金，金属硅化物和金属氮化物，而不侵蚀电介质和基底。

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