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    • 1. 发明授权
    • Fluid ejector having an anisotropic surface chamber etch
    • 具有各向异性表面腔蚀刻的流体喷射器
    • US07836600B2
    • 2010-11-23
    • US11685259
    • 2007-03-13
    • James M. ChwalekJohn A. LebensChristopher N. DelametterDavid P. TrauernichtGary A. Kneezel
    • James M. ChwalekJohn A. LebensChristopher N. DelametterDavid P. TrauernichtGary A. Kneezel
    • B23P17/00B21D53/76B41J2/14B41J2/16
    • B41J2/1601B41J2/14137B41J2/1628B41J2/1629B41J2/1635B41J2/1637B41J2002/1437B41J2002/14467Y10T29/49401
    • A method of forming a fluid chamber and a source of fluid impedance includes providing a substrate having a surface; depositing a first material layer on the surface of the substrate, the first material layer being differentially etchable with respect to the substrate; removing a portion of the first material layer thereby forming a patterned first material layer and defining the fluid chamber boundary location; depositing a sacrificial material layer over the patterned first layer; removing a portion of the sacrificial material layer thereby forming a patterned sacrificial material layer and further defining the fluid chamber boundary location; depositing at least one additional material layer over the patterned sacrificial material layer; forming a hole extending from the at least one additional material layer to the sacrificial material layer, the hole being positioned within the fluid chamber boundary location; removing the sacrificial material layer in the fluid chamber boundary location by introducing an etchant through the hole; forming the fluid chamber by introducing an etchant through the hole; and forming a source of fluid impedance.
    • 形成流体室和流体阻抗源的方法包括提供具有表面的基底; 在所述衬底的表面上沉积第一材料层,所述第一材料层相对于所述衬底可差分蚀刻; 去除第一材料层的一部分,从而形成图案化的第一材料层并限定流体室边界位置; 在所述图案化的第一层上沉积牺牲材料层; 去除牺牲材料层的一部分,从而形成图案化的牺牲材料层并进一步限定流体室边界位置; 在图案化的牺牲材料层上沉积至少一个附加材料层; 形成从所述至少一个附加材料层延伸到所述牺牲材料层的孔,所述孔位于所述流体室边界位置内; 通过在孔中引入蚀刻剂来除去流体室边界位置中的牺牲材料层; 通过在孔中引入蚀刻剂来形成流体室; 并形成流体阻抗源。