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    • 3. 发明申请
    • SUPERABRASIVE ELEMENTS AND METHODS FOR PROCESSING AND MANUFACTURING THE SAME USING PROTECTIVE LAYERS
    • 超级元素及其使用保护层加工和制造相同方法
    • US20160016290A1
    • 2016-01-21
    • US14864649
    • 2015-09-24
    • David P. MiessAndrew E. Dadson
    • David P. MiessAndrew E. Dadson
    • B24D3/00B24D18/00
    • A method of processing a polycrystalline diamond element includes forming a protective layer over a selected portion of a polycrystalline diamond element, the polycrystalline diamond element having a polycrystalline diamond table that includes a superabrasive face, a superabrasive side surface, and a chamfer extending between the superabrasive face and the superabrasive side surface. A portion of the superabrasive side surface is covered by the protective layer and the protective layer is not formed over the chamfer. The method includes exposing at least a portion of the polycrystalline diamond element to a leaching solution. A polycrystalline diamond element has a polycrystalline diamond table that includes a leached volume extending from the superabrasive face to a portion of the chamfer proximate to the superabrasive side surface, and the leached volume does not substantially extend along the superabrasive side surface.
    • 一种处理多晶金刚石元件的方法包括在多晶金刚石元件的选定部分上形成保护层,所述多晶金刚石元件具有多晶金刚石台,所述多晶金刚石台包括超研磨面,超磨料侧表面和在超磨料之间延伸的倒角 面和超磨损侧面。 超研磨侧表面的一部分被保护层覆盖,保护层不形成在倒角上。 该方法包括将至少一部分多晶金刚石元件暴露于浸出溶液中。 多晶金刚石元件具有多晶金刚石台,该多晶金刚石台包括从超研磨面延伸到靠近超磨料侧表面的斜面的一部分的浸出体积,并且浸出体积基本上不沿着超研磨侧表面延伸。
    • 8. 发明授权
    • Polycrystalline diamond compact including a non-uniformly leached polycrystalline diamond table and applications therefor
    • 多晶金刚石复合体包括非均匀浸出的多晶金刚石台及其应用
    • US08596387B1
    • 2013-12-03
    • US12898047
    • 2010-10-05
    • Mohammad N. SaniAndrew E. Dadson
    • Mohammad N. SaniAndrew E. Dadson
    • E21B10/36
    • E21B10/55B22F2005/001B22F2207/03B24D3/06B24D99/005C22C26/00C22C2204/00E21B10/567
    • Embodiments relate to polycrystalline diamond compacts (“PDCs”) including a non-uniformly leached polycrystalline diamond (“PCD”) table, and methods of fabricating such PDCs. In an embodiment, a PDC includes a substrate and a PCD table integrally formed with and bonded to the substrate. The PCD table defines an upper surface and at least one peripheral surface. The PCD table includes a plurality of bonded diamond grains. The PCD table includes a first region adjacent to the substrate that includes metal-solvent catalyst disposed interstitially between the bonded diamond grains thereof, and a leached second region extending inwardly from the upper surface and the at least one peripheral surface that is depleted of the metal-solvent catalyst. The leached second region exhibits a leach depth profile having a maximum leach depth that is measured from the upper surface. A leach depth of the leach depth profile decreases with lateral distance from a central axis of the PCD table and toward the at least one peripheral surface.
    • 实施例涉及包括非均匀浸出的多晶金刚石(“PCD”)表的多晶金刚石压块(“PDC”),以及制造这种PDC的方法。 在一个实施例中,PDC包括与衬底一体形成并结合到衬底的基底和PCD台。 PCD表定义了上表面和至少一个外围表面。 PCD台包括多个结合的金刚石晶粒。 PCD台包括与衬底相邻的第一区域,该第一区域包括位于其结合的金刚石晶粒之间间隙的金属 - 溶剂催化剂和从上表面向内延伸的浸出的第二区域和至少一个耗尽金属的外围表面 - 溶剂催化剂。 浸出的第二区域具有从上表面测量的具有最大浸出深度的浸出深度分布。 浸出深度分布的浸出深度随着从PCD台的中心轴线朝向至少一个周边表面的横向距离而减小。