专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4805138A An unerasable eprom cell 失效
标题翻译：一个不可能的eprom细胞
公开(公告)号：US4805138A
公开(公告)日：1989-02-14
申请号：US768787
申请日：1985-08-23
申请人： David McElroy , Timmie M. Coffman , Buster Ashmore
发明人： David McElroy , Timmie M. Coffman , Buster Ashmore
IPC分类号： G11C16/18 , H01L29/788 , G11C7/02 , G11C19/00 , H01L25/04
CPC分类号： H01L29/7881 , G11C16/18
摘要： An electrically programmable memory cell of a type having a source, a drain, a floating gate and a control gate formed over a face of a semiconductor substrate in which a ring region of material doped similarly to the substrate encloses the source, drain and gates and extends to a surface of the substrate around its length. Drain and source coupling regions of material doped oppositely to the substrate contact the drain and source, respectively, within the ring and extend under the ring to the substrate surface outside of the ring defining drain and source contact regions, respectively. A contact outside the ring to the control gate is provided by a gate coupling region also extending under the ring to a substrate surface on either side thereof. An interconnect couples the floating gate to the gate coupling region. A non-light transmitting, electrically conducting shield extends over the cell contacting the ring region around its periphery at the substrate surface.
摘要翻译：一种具有源极，漏极，浮置栅极和控制栅极的类型的电可编程存储器单元，其形成在半导体衬底的表面上，其中掺杂类似于衬底的材料的环区域包围源极，漏极和栅极，延伸到基板周围的表面。与衬底相反地掺杂的材料的漏极和源极耦合区域分别在环内接触漏极和源极，并在环下方分别延伸到限定漏极和源极接触区域的环外的衬底表面。环之外的与控制栅极接触的接触由也在环下延伸到其任一侧上的衬底表面的栅极耦合区域提供。互连将浮置栅极耦合到栅极耦合区域。非透光导电屏蔽层在基板表面周围环绕其周围的环区域延伸出来。

IPRDB

热门服务

关于我们

友情链接

联系方式