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1. 发明申请

US20080210163A1 Independent Radiant Gas Preheating for Precursor Disassociation Control and Gas Reaction Kinetics in Low Temperature CVD Systems 有权
标题翻译：独立辐射气体预热用于前体脱离控制和气体反应动力学在低温CVD系统
公开(公告)号：US20080210163A1
公开(公告)日：2008-09-04
申请号：US11937388
申请日：2007-11-08
申请人： David Keith Carlson , Satheesh Kuppurao , Howard Beckford , Herman Diniz , Kailash Kiran Patalay , Brian Hayes Burrows , Jeffrey Ronald Campbell , Zouming Zhu , Xiaowei Li , Errol Antonio Sanchez
发明人： David Keith Carlson , Satheesh Kuppurao , Howard Beckford , Herman Diniz , Kailash Kiran Patalay , Brian Hayes Burrows , Jeffrey Ronald Campbell , Zouming Zhu , Xiaowei Li , Errol Antonio Sanchez
IPC分类号： C23C16/455
CPC分类号： C23C16/455 , C23C16/22 , C23C16/452 , H01L21/02532 , H01L21/0262 , Y10T137/0318
摘要： A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.
摘要翻译：描述了将前体材料输送到处理室的方法和装置。该装置包括具有多个气体输送区的气体分配组件。每个区域可以包括具有用于接收前体气体的入口和至少一个非热能源的诸如红外光源的气室。可以改变至少一个非热能源，以控制来自红外光源的波长的强度。

2. 发明授权

US08663390B2 Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems 有权
标题翻译：独立辐射气体预热用于前体分解控制和低温CVD系统中的气体反应动力学
公开(公告)号：US08663390B2
公开(公告)日：2014-03-04
申请号：US13175499
申请日：2011-07-01
申请人： David Keith Carlson , Satheesh Kuppurao , Howard Beckford , Herman Diniz , Kailash Kiran Patalay , Brian Hayes Burrows , Jeffrey Ronald Campbell , Zouming Zhu , Xiaowei Li , Errol Antonio Sanchez
发明人： David Keith Carlson , Satheesh Kuppurao , Howard Beckford , Herman Diniz , Kailash Kiran Patalay , Brian Hayes Burrows , Jeffrey Ronald Campbell , Zouming Zhu , Xiaowei Li , Errol Antonio Sanchez
IPC分类号： C23C16/452 , C23C16/46 , C23F1/00 , H01L21/306 , C23C16/02 , C23C16/06
CPC分类号： C23C16/455 , C23C16/22 , C23C16/452 , H01L21/02532 , H01L21/0262 , Y10T137/0318
摘要： A method and apparatus for delivering precursor materials to a processing chamber is provided. In one embodiment, a deposition apparatus is provided. The apparatus includes a chamber having a longitudinal axis, and a gas distribution assembly coupled to a sidewall of the chamber. The gas distribution assembly comprises a plurality of plenums coupled to one or more gas sources, an energy source positioned to provide energy to each of the plurality of plenums, and a variable power source coupled to the energy source, wherein the gas distribution assembly provides a flow path through the chamber that is normal to the longitudinal axis of the chamber.
摘要翻译：提供了一种用于将前体材料输送到处理室的方法和装置。在一个实施例中，提供了沉积设备。该装置包括具有纵向轴线的腔室和联接到腔室的侧壁的气体分配组件。气体分配组件包括耦合到一个或多个气体源的多个增压室，被定位成向多个增压室中的每一个提供能量的能量源以及耦合到该能量源的可变电源，其中该气体分配组件提供一个通过腔室的流动通道，其垂直于腔室的纵向轴线。

3. 发明授权

US07976634B2 Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems 有权
标题翻译：独立辐射气体预热用于前体分解控制和低温CVD系统中的气体反应动力学
公开(公告)号：US07976634B2
公开(公告)日：2011-07-12
申请号：US11937388
申请日：2007-11-08
申请人： David Keith Carlson , Satheesh Kuppurao , Howard Beckford , Herman Diniz , Kailash Kiran Patalay , Brian Hayes Burrows , Jeffrey Ronald Campbell , Zouming Zhu , Xiaowei Li , Errol Antonio Sanchez
发明人： David Keith Carlson , Satheesh Kuppurao , Howard Beckford , Herman Diniz , Kailash Kiran Patalay , Brian Hayes Burrows , Jeffrey Ronald Campbell , Zouming Zhu , Xiaowei Li , Errol Antonio Sanchez
IPC分类号： C23C16/452 , C23C16/46 , C23C16/02 , C23F1/00 , H01L21/306 , C23C16/06
CPC分类号： C23C16/455 , C23C16/22 , C23C16/452 , H01L21/02532 , H01L21/0262 , Y10T137/0318
摘要： A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.
摘要翻译：描述了将前体材料输送到处理室的方法和装置。该装置包括具有多个气体输送区的气体分配组件。每个区域可以包括具有用于接收前体气体的入口和至少一个非热能源的诸如红外光源的气室。可以改变至少一个非热能源，以控制来自红外光源的波长的强度。

4. 发明申请

US20100120259A1 METHOD AND APPARATUS TO ENHANCE PROCESS GAS TEMPERATURE IN A CVD REACTOR 有权
标题翻译：在CVD反应器中提高工艺气体温度的方法和装置
公开(公告)号：US20100120259A1
公开(公告)日：2010-05-13
申请号：US12270590
申请日：2008-11-13
申请人： JEAN R. VATUS , Kailash Kiran Patalay
发明人： JEAN R. VATUS , Kailash Kiran Patalay
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/4585 , C23C16/45504
摘要： Methods and apparatus for controlling temperature and flow characteristics of process gases in a process chamber have been provided herein. In some embodiments, an apparatus for controlling temperature and flow characteristics of a process gas in a process chamber may include a gas pre-heat ring configured to be disposed about a substrate and having a labyrinthine conduit disposed therein, wherein the labyrinthine conduit has an inlet and outlet to facilitate the flow of the process gas therethrough.
摘要翻译：本文提供了用于控制处理室中工艺气体的温度和流动特性的方法和装置。在一些实施例中，用于控制处理室中的处理气体的温度和流动特性的装置可以包括气体预热环，其构造成围绕基板设置并且具有布置在其中的迷宫式导管，其中迷宫式管道具有入口和出口以便于工艺气体流过其中。

5. 发明授权

US08951351B2 Wafer processing hardware for epitaxial deposition with reduced backside deposition and defects 有权
标题翻译：用于外延沉积的晶片处理硬件具有减少的背面沉积和缺陷
公开(公告)号：US08951351B2
公开(公告)日：2015-02-10
申请号：US11868289
申请日：2007-10-05
申请人： Kailash Kiran Patalay , Craig Metzner , Jean Vatus
发明人： Kailash Kiran Patalay , Craig Metzner , Jean Vatus
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , C23C16/458 , C23C16/455 , H01L21/687
CPC分类号： C23C16/4585 , C23C16/45521 , H01L21/68728 , H01L21/68735
摘要： Methods and apparatus for reducing autodoping and backside defects on a substrate during epitaxial deposition processes are provided herein. In some embodiments, an apparatus for reducing autodoping and backside defects on a substrate includes a substrate support ring having a substrate holder structure configured to support the substrate in a position for processing along an edge defined by the backside of the substrate and a sidewall of the substrate or along a plurality of discrete points on or proximate to the edge; and a spacer ring for positioning the substrate support ring above a susceptor plate to define a substrate gap region between the susceptor plate and the backside of the substrate, the spacer ring comprising a plurality of openings formed therethrough that facilitate passage of a gas into and out of the substrate gap region.
摘要翻译：本文提供了在外延沉积工艺期间减少衬底上自动掺杂和背面缺陷的方法和装置。在一些实施例中，用于减少衬底上的自动掺杂和背面缺陷的装置包括衬底支撑环，衬底支撑环具有衬底保持器结构，该衬底支撑结构构造成将衬底支撑在沿着由衬底背面限定的边缘处理的位置，衬底或沿着边缘上或附近的多个离散点; 以及间隔环，用于将衬底支撑环定位在基座板上方以限定基座板和衬底背面之间的衬底间隙区域，间隔环包括穿过其中形成的多个开口，其有助于气体进入和离开的衬底间隙区域。

6. 发明授权

US08512472B2 Method and apparatus to enhance process gas temperature in a CVD reactor 有权
标题翻译：提高CVD反应器中工艺气体温度的方法和装置
公开(公告)号：US08512472B2
公开(公告)日：2013-08-20
申请号：US12270590
申请日：2008-11-13
申请人： Jean R. Vatus , Kailash Kiran Patalay
发明人： Jean R. Vatus , Kailash Kiran Patalay
IPC分类号： C23C16/00
CPC分类号： C23C16/4585 , C23C16/45504
摘要： Methods and apparatus for controlling temperature and flow characteristics of process gases in a process chamber have been provided herein. In some embodiments, an apparatus for controlling temperature and flow characteristics of a process gas in a process chamber may include a gas pre-heat ring configured to be disposed about a substrate and having a labyrinthine conduit disposed therein, wherein the labyrinthine conduit has an inlet and outlet to facilitate the flow of the process gas therethrough.
摘要翻译：本文提供了用于控制处理室中工艺气体的温度和流动特性的方法和装置。在一些实施例中，用于控制处理室中的处理气体的温度和流动特性的装置可以包括气体预热环，其构造成围绕基板设置并且具有布置在其中的迷宫式导管，其中迷宫式管道具有入口和出口以便于工艺气体流过其中。

7. 发明授权

US08441640B2 Non-contact substrate support position sensing system and corresponding adjustments 有权
标题翻译：非接触式基板支撑位置传感系统及相应调整
公开(公告)号：US08441640B2
公开(公告)日：2013-05-14
申请号：US12238987
申请日：2008-09-26
申请人： Kailash Kiran Patalay , Richard O. Collins , Jean R. Vatus , Zhepeng Cong
发明人： Kailash Kiran Patalay , Richard O. Collins , Jean R. Vatus , Zhepeng Cong
IPC分类号： G01B11/00 , C23F1/00
CPC分类号： H01L21/68 , C30B25/12 , H01L21/67259 , H01L21/68785 , H01L21/68792
摘要： A substrate processing system includes an optical measurement assembly coupled to an exterior of a processing chamber that has a portion that is transparent. The processing chamber includes a reference object and a pedestal for supporting a work piece. The optical measurement assembly measures a lateral location, a height and a tilt of the pedestal by transmitting light into the processing chamber through the transparent portion of the processing chamber and detecting a reflected light from both the reference object and the portion of the pedestal after the reflected light leaves the chamber through the transparent portion of the processing chamber. A method of adjusting a pedestal includes analyzing the reflected light and leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal in response to the analyzed reflected light.
摘要翻译：衬底处理系统包括耦合到具有透明部分的处理室的外部的光学测量组件。处理室包括用于支撑工件的参考物体和基座。光学测量组件通过将光通过处理室的透明部分传输到处理室中来测量基座的横向位置，高度和倾斜度，并且检测来自基准物体和底座部分之后的反射光反射光通过处理室的透明部分离开室。调整基座的方法包括：分析反射光并调平基座，平移基座，将基座高度校准到预热环电平，以及响应分析的反射光检查基座的电平和位置。

8. 发明授权

US07964038B2 Apparatus for improved azimuthal thermal uniformity of a substrate 有权
标题翻译：用于改善基底的方位角热均匀性的装置
公开(公告)号：US07964038B2
公开(公告)日：2011-06-21
申请号：US12244604
申请日：2008-10-02
申请人： Kailash Kiran Patalay , Jean R. Vatus , Dean Berlin
发明人： Kailash Kiran Patalay , Jean R. Vatus , Dean Berlin
IPC分类号： C23C16/00
CPC分类号： H01L21/68785 , H01L21/67115 , H01L21/68742 , Y10T428/31504
摘要： Methods and apparatus for providing an improved azimuthal thermal uniformity of a substrate are provided herein. In some embodiments, a substrate support for use in a semiconductor process chamber includes a susceptor plate; and a supporting member to support a backside of the susceptor plate proximate an outer edge thereof, wherein the supporting member substantially covers the backside of the susceptor plate. In some embodiments, the substrate support is disposed in a process chamber having at least some lamps disposed below the supporting member and utilized for heating the back side of the susceptor plate.
摘要翻译：本文提供了提供改善的基板的方位角热均匀性的方法和装置。在一些实施例中，用于半导体处理室的衬底支撑件包括基座板; 以及支撑构件，其支撑靠近其外边缘的基座板的背面，其中支撑构件基本上覆盖基座板的背面。在一些实施例中，衬底支撑件设置在具有至少一些设置在支撑构件下方并用于加热感受板的背面的灯的处理室中。

9. 发明授权

US08398777B2 System and method for pedestal adjustment 有权
标题翻译：基座调整系统及方法
公开(公告)号：US08398777B2
公开(公告)日：2013-03-19
申请号：US12238921
申请日：2008-09-26
申请人： Richard O. Collins , Kailash Kiran Patalay , Jean R. Vatus , Zhepeng Cong
发明人： Richard O. Collins , Kailash Kiran Patalay , Jean R. Vatus , Zhepeng Cong
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68 , C30B25/12 , H01L21/67259 , H01L21/68785 , H01L21/68792
摘要： A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.
摘要翻译：用于基板处理系统的基座定位组件系统包括刚性地连接到基座轴的基座，刚性地附接到基板处理系统的基准，横向调整组件，用于调节基座相对于基准的横向位置，以及垂直调节组件，用于调节基座相对于基准的倾斜。横向调节组件和垂直调节组件位于处理室的外部，并且通过基座轴联接到设置在处理室内的基座。参考可以是环，并且横向调节组件使基座在环内基本上居中。一种调节基座的方法包括调平基座，平移基座，将基座高度校准到预热环水平面，以及在旋转基座时检查基座的水平和位置。

10. 发明申请

US20100075488A1 CVD REACTOR WITH MULTIPLE PROCESSING LEVELS AND DUAL-AXIS MOTORIZED LIFT MECHANISM 审中-公开
标题翻译：具有多种加工水平和双轴电动机构的CVD反应器
公开(公告)号：US20100075488A1
公开(公告)日：2010-03-25
申请号：US12560073
申请日：2009-09-15
申请人： Richard O. Collins , Nyi O. Myo , Kevin J. Bautista , John S. Webb , Errol C. Sanchez , Yi-Chiau Huang , Kailash Kiran Patalay , Zhi Yuan Zhou , Wilson Yu
发明人： Richard O. Collins , Nyi O. Myo , Kevin J. Bautista , John S. Webb , Errol C. Sanchez , Yi-Chiau Huang , Kailash Kiran Patalay , Zhi Yuan Zhou , Wilson Yu
IPC分类号： H01L21/20 , C23C16/458
CPC分类号： H01L21/67115 , C23C16/45551 , H01L21/68742 , H01L21/68792
摘要： An apparatus for processing a substrate, comprising a processing chamber and a substrate support and lift pin assembly disposed within the chamber. The substrate support and lift pin assembly are coupled to a lift mechanism that controls positioning of the substrate support and the lift pins and provides rotation for the substrate support. The lift mechanism includes at least one sensor capable of generating a signal when clearance between the substrate support and the lift pins allows rotation of the substrate support to begin. The substrate support capable of concurrent axial motion and rotation may be used in a processing chamber comprising multiple processing zones separated by edge rings. Substrates may be subjected to successive or cyclical processes by moving between the multiple processing zones.
摘要翻译：一种用于处理衬底的装置，包括处理室和设置在腔室内的衬底支撑件和提升销组件。基板支撑和提升销组件联接到升降机构，该提升机构控制基板支撑件和升降销的定位并提供用于基板支撑件的旋转。提升机构包括至少一个传感器，当传感器支架和提升销之间的间隙允许基板支撑件的旋转开始时能产生信号。能够同时进行轴向运动和旋转的基板支撑件可用于包括由边缘环分开的多个处理区域的处理室。可以通过在多个处理区之间移动来对衬底进行连续或循环过程。

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