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1. 发明授权

US5733641A Buffered substrate for semiconductor devices 失效
标题翻译：用于半导体器件的缓冲衬底
公开(公告)号：US5733641A
公开(公告)日：1998-03-31
申请号：US656460
申请日：1996-05-31
申请人： David K. Fork , James B. Boyce , Ping Mei , Steve Ready , Richard I. Johnson , Greg B. Anderson
发明人： David K. Fork , James B. Boyce , Ping Mei , Steve Ready , Richard I. Johnson , Greg B. Anderson
IPC分类号： H01L21/02 , H01L21/20 , H01L21/205 , H01L21/336 , H01L27/12 , H01L29/786 , B32B15/00
CPC分类号： H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02675 , Y10S438/967 , Y10T428/24479 , Y10T428/24926 , Y10T428/265
摘要： The invention provides a buffered substrate that includes a substrate, a buffer layer and a silicon layer. The buffer layer is disposed between the substrate and the silicon layer. The buffer layer has a melting point higher than a melting point of the substrate. A polycrystalline silicon layer is formed by crystallizing the silicon layer using a laser beam.
摘要翻译：本发明提供一种缓冲衬底，其包括衬底，缓冲层和硅层。缓冲层设置在基板和硅层之间。缓冲层的熔点高于基板的熔点。通过使用激光束使硅层结晶来形成多晶硅层。

2. 发明授权

US5821135A Methods for and applications of making buried structures in semiconductor thin films 失效
标题翻译：在半导体薄膜中制作掩埋结构的方法和应用
公开(公告)号：US5821135A
公开(公告)日：1998-10-13
申请号：US730981
申请日：1996-10-16
申请人： Ping Mei , Gregory B. Anderson , James B. Boyce , David K. Fork , Richard I. Johnson
发明人： Ping Mei , Gregory B. Anderson , James B. Boyce , David K. Fork , Richard I. Johnson
IPC分类号： H01L21/20 , H01L21/00 , H01L21/84
CPC分类号： H01L21/2026
摘要： A transparent substrate as formed on its front side a layer of amorphous silicon. A laser beam is used to irradiate through the backside of the transparent substrate in order to form buried nucleation sites within the amorphous silicon. The buried nucleation sites which are used as nucleation seeds are then used during a front side crystallization process in order to form large single silicon crystals over the substrate surface.
摘要翻译：在其正面形成非晶硅层的透明基板。使用激光束照射穿过透明基板的背面，以便在非晶硅内形成掩埋的成核位置。然后在前侧结晶过程中使用用作成核种子的掩埋成核位点，以便在基材表面上形成大的单硅晶体。

3. 发明授权

US6011531A Methods and applications of combining pixels to the gate and data lines for 2-D imaging and display arrays 失效
标题翻译：将像素组合到用于2-D成像和显示阵列的栅极和数据线的方法和应用
公开(公告)号：US6011531A
公开(公告)日：2000-01-04
申请号：US734770
申请日：1996-10-21
申请人： Ping Mei , James B. Boyce , Robert A. Street , David K. Fork
发明人： Ping Mei , James B. Boyce , Robert A. Street , David K. Fork
IPC分类号： G02F1/136 , G02F1/1368 , G09F9/30 , G09G3/20 , G09G3/36 , G06F17/30
CPC分类号： G09G3/2085 , G09G3/20 , H04N3/1562 , G09G2300/0465 , G09G2300/08 , G09G2300/0804 , G09G2310/0262
摘要： This invention relates to methods and applications of forming clusters of pixels in 2-D sensing and display arrays. Using TFT switches having more than one predetermined electrical characteristics. The array formed according to these teachings being used in sensing, displaying, adjusting resolution, color selection, image processing, object recognition and filtering.
摘要翻译：本发明涉及在二维感测和显示阵列中形成像素簇的方法和应用。使用具有多于一个预定电特性的TFT开关。根据这些教导形成的阵列用于感测，显示，调整分辨率，颜色选择，图像处理，对象识别和滤波。

4. 发明授权

US5358925A Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer 失效
标题翻译：具有YSZ外延阻挡层和外延超导层的硅衬底
公开(公告)号：US5358925A
公开(公告)日：1994-10-25
申请号：US927791
申请日：1992-08-10
申请人： George A. Neville Connell , David B. Fenner , James B. Boyce , David K. Fork
发明人： George A. Neville Connell , David B. Fenner , James B. Boyce , David K. Fork
IPC分类号： C30B23/02 , H01L39/24 , H01L39/22 , H01L39/12
CPC分类号： H01L39/2458 , C30B23/02 , C30B29/22 , C30B29/225
摘要： An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85.degree. K., a transition width (10-90%) of no more than 1.0.degree. K., a resistivity at 300.degree. K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300.degree. K./100.degree. K.) of 3.0.+-. 0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.
摘要翻译：外延沉积在单晶硅衬底表面上的YSZ缓冲层上的HTSC材料具有至少85°K的零电阻转变温度，不超过1.0°K的转变宽度（10-90％），在300°K的电阻率不超过300微欧姆厘米，电阻率比（300°K / 100°K）为3.0 +/- 0.2。使用旋转蚀刻工艺清洁硅衬底的表面，以产生用诸如氢的元素的原子层终止的不与硅反应的原子清洁表面。衬底可以移动到沉积室而没有污染。氢气在室中蒸发，然后优选通过激光烧蚀外延沉积YSZ。此后，优选通过激光烧蚀外延沉积诸如YBCO的HTSC材料。然后将结构在氧气气氛中冷却。

5. 发明授权

US5173474A Silicon substrate having an epitaxial superconducting layer thereon and method of making same 失效
标题翻译：具有外延超导层的硅衬底及其制造方法
公开(公告)号：US5173474A
公开(公告)日：1992-12-22
申请号：US667669
申请日：1991-03-11
申请人： George A. N. Connell , David B. Fenner , James B. Boyce , David K. Fork
发明人： George A. N. Connell , David B. Fenner , James B. Boyce , David K. Fork
IPC分类号： C30B23/02 , H01L39/24
CPC分类号： H01L39/2458 , C30B23/02 , C30B29/22 , C30B29/225 , Y10S505/701 , Y10S505/729 , Y10S505/73 , Y10S505/731 , Y10S505/732 , Y10S505/734
摘要： An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85.degree. K., a transition width (10-90%) of no more than 1.0.degree. K., a resistivity at 300.degree. K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300.degree. K./100.degree. K.) of 3.0.+-.0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.
摘要翻译：外延沉积在单晶硅衬底表面上的YSZ缓冲层上的HTSC材料具有至少85°K的零电阻转变温度，不超过1.0°K的转变宽度（10-90％），在300°K的电阻率不超过300微欧姆厘米，电阻率比（300°K / 100°K）为3.0 +/- 0.2。使用旋转蚀刻工艺清洁硅衬底的表面，以产生用诸如氢的元素的原子层终止的不与硅反应的原子清洁表面。衬底可以移动到沉积室而没有污染。氢气在室中蒸发，然后优选通过激光烧蚀外延沉积YSZ。此后，优选通过激光烧蚀外延沉积诸如YBCO的HTSC材料。然后将结构在氧气气氛中冷却。

6. 发明授权

US06794725B2 Amorphous silicon sensor with micro-spring interconnects for achieving high uniformity in integrated light-emitting sources 有权
标题翻译：具有微弹簧互连的非晶硅传感器，用于实现集成发光源的高均匀性
公开(公告)号：US06794725B2
公开(公告)日：2004-09-21
申请号：US09469122
申请日：1999-12-21
申请人： Francesco Lemmi , Christopher L. Chua , Ping Mei , JengPing Lu , David K. Fork , Harry J. McIntyre
发明人： Francesco Lemmi , Christopher L. Chua , Ping Mei , JengPing Lu , David K. Fork , Harry J. McIntyre
IPC分类号： H01L3100
CPC分类号： H01L31/1055 , B41J2/45 , H01L25/0753 , H01L31/1016 , H01L2924/0002 , H01L2924/3011 , H01S5/02 , H01S5/0262 , H01S5/4025 , H01L2924/00
摘要： A hybrid structure or device is provided wherein carried on a single substrate is at least one micro-spring interconnect having an elastic material that is initially fixed to a surface of the substrate, an anchor portion which is fixed to the substrate surface and a free portion. The spring contact is self-assembling in that as the free portion is released it moves out of the plane of the substrate. Also integrated on the substrate is a sensor having an active layer and contacts. The substrate and sensor may be formed of materials which are somewhat partially transparent to light at certain infrared wavelengths. The integrated sensor/spring contact configuration may be used in an imaging system to sense output from a light source which is used for image formation. The light source may be a laser array, LED array or other appropriate light source. The sensor is appropriately sized to sense all or some part of light from the light source. The sensor may also be sufficiently transparent so that light is not blocked from its emission path, with a contrast ratio such that it only absorbs a small fraction of light passing therethrough. An additional characteristic is that the manufacturing process is compatible with the manufacturing process for the micro-spring interconnects. Data from the sensor is used as light source correction information. This information is provided to a calibration configuration which allows for calibration of high-speed systems.
摘要翻译：提供了一种混合结构或装置，其中承载在单个基板上的是具有弹性材料的至少一个微弹簧互连，弹性材料最初固定到基板的表面，固定到基板表面的锚定部分和自由部分。弹簧接触件是自组装的，因为随着自由部分的释放，它移出基板的平面。还集成在基板上的是具有有源层和触点的传感器。衬底和传感器可以由对某些红外波长的光稍微部分透明的材料形成。集成的传感器/弹簧接触配置可用于成像系统中以感测用于图像形成的光源的输出。光源可以是激光阵列，LED阵列或其他合适的光源。传感器的尺寸适当，可以感测来自光源的全部或部分光线。传感器也可以是足够透明的，使得光不被其发射路径阻挡，对比度使得其仅吸收通过其中的一小部分光。另外的特征是制造工艺与微弹簧互连的制造工艺兼容。来自传感器的数据用作光源校正信息。该信息被提供给允许校准高速系统的校准配置。

7. 发明授权

US06848175B2 Method of forming an out-of-plane structure 有权
标题翻译：形成平面外结构的方法
公开(公告)号：US06848175B2
公开(公告)日：2005-02-01
申请号：US10417544
申请日：2003-04-16
申请人： David K. Fork , Ping Mei , Koenraad F. Van Schuylenbergh
发明人： David K. Fork , Ping Mei , Koenraad F. Van Schuylenbergh
IPC分类号： G03F7/20 , B81B1/00 , B81B3/00 , B81C1/00 , B81C3/00 , H01F17/00 , H01F17/02 , H01F27/00 , H01F41/04 , H01L21/48 , H01L21/60 , H01L23/522 , H01L27/08 , H05K3/40 , H05K3/00
CPC分类号： H01L27/08 , H01F17/0033 , H01F41/041 , H01L21/4853 , H01L23/5227 , H01L24/11 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/1305 , H01L2924/13062 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H05K3/4092 , Y10T29/49147 , Y10T29/49204 , Y10T29/49208 , Y10T29/49218 , H01L2924/00
摘要： Several methods and structures for improving the yield of out-of-plane micro-device structures including springs and coils are described. In one method the springs used to form out-of-plane structures are constrained via a tether to avoid bunching and entanglement. The high yield structure may be used in numerous electronic applications such as filter circuits.
摘要翻译：描述了用于提高包括弹簧和线圈在内的平面外微结构结构的产量的几种方法和结构。在一种方法中，用于形成平面外结构的弹簧通过系绳来约束以避免聚束和缠结。高产量结构可用于许多电子应用中，例如滤波电路。

8. 发明授权

US06595787B2 Low cost integrated out-of-plane micro-device structures and method of making 有权
公开(公告)号：US06595787B2
公开(公告)日：2003-07-22
申请号：US09780163
申请日：2001-02-09
申请人： David K. Fork , Ping Mei , Koenraad F. Van Schuylenbergh
发明人： David K. Fork , Ping Mei , Koenraad F. Van Schuylenbergh
IPC分类号： H01R1200
CPC分类号： H01L27/08 , H01F17/0033 , H01F41/041 , H01L21/4853 , H01L23/5227 , H01L24/11 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/1305 , H01L2924/13062 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H05K3/4092 , Y10T29/49147 , Y10T29/49204 , Y10T29/49208 , Y10T29/49218 , H01L2924/00
摘要： Several methods and structures for improving the yield of out-of-plane micro-device structures including springs and coils are described. In one method the springs used to form out-of-plane structures are constrained via a tether to avoid bunching and entanglement. The high yield structure may be used in numerous electronic applications such as filter circuits.

9. 发明授权

US09643394B2 Oblique angle micromachining of fluidic structures 有权
公开(公告)号：US09643394B2
公开(公告)日：2017-05-09
申请号：US13019246
申请日：2011-02-01
申请人： David K. Fork , Scott E. Solberg
发明人： David K. Fork , Scott E. Solberg
IPC分类号： B29C47/06 , B29C47/12 , B32B38/10 , B29C47/70 , B29C47/00 , B29C47/08
CPC分类号： B32B38/10 , B29C47/0002 , B29C47/0021 , B29C47/06 , B29C47/0883 , B29C47/128 , B29C47/705 , B29C47/707 , Y10T156/1082
摘要： An extrusion device has a stack of at least two layers, the stack including an outlet, an inlet for a first material, and a feed channel for the first material arranged to fluidically connect to the inlet for the first material, the feed channel having a sloped end. A method of manufacturing an extrusion device includes forming an outlet, an inlet for a first material and a feed channel for the first material having a sloped end in a stack of layers, aligning the stack of layers to fluidically connect the feed channel for the first material with the inlet for the first material and to fluidically connect the inlet for the first material with the outlet, and bonding the layers together.

10. 发明授权

US08839512B2 Oblique parts or surfaces 有权
标题翻译：倾斜的零件或表面
公开(公告)号：US08839512B2
公开(公告)日：2014-09-23
申请号：US13619548
申请日：2012-09-14
申请人： Jurgen Daniel , David K. Fork , Armin R. Volkel
发明人： Jurgen Daniel , David K. Fork , Armin R. Volkel
IPC分类号： F16F3/02 , G01R1/067 , B81B3/00 , H01L23/00 , B81C1/00
CPC分类号： F16F3/02 , B81B3/0059 , B81B2203/0118 , B81C1/0015 , F16F1/025 , F16H1/125 , G01R1/06716 , G01R1/06727 , G01R1/06744 , H01L24/72 , H01L24/90 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/15788 , Y10T29/49155 , Y10T29/49204 , Y10T29/49609 , H01L2924/00
摘要： Various structures, such as microstructures and wall-like structures, can include parts or surfaces that are oblique. In some implementations, a cantilevered element includes a spring-like portion with a uniformly oblique surface or with another artifact of an oblique radiation technique. In some implementations, when a deflecting force is applied, a spring-like portion can provide deflection and spring force within required ranges. Various oblique radiation techniques can be used, such as radiation of a layer through a prism, and structures having spring-like portions with oblique radiation artifacts can be used in various applications, such as with downward or upward deflecting forces.
摘要翻译：诸如微结构和壁状结构的各种结构可以包括倾斜的部分或表面。在一些实施方案中，悬臂元件包括具有均匀倾斜表面的弹簧状部分或具有倾斜辐射技术的另一伪像。在一些实施方案中，当施加偏转力时，弹簧状部分可以在所需范围内提供偏转和弹簧力。可以使用各种倾斜辐射技术，例如穿过棱镜的层的辐射，并且具有具有倾斜辐射伪影的弹簧状部分的结构可以用于各种应用中，例如具有向下或向上偏转力。

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