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    • 4. 发明授权
    • Lateral SOI semiconductor device
    • 横向SOI半导体器件
    • US07531875B2
    • 2009-05-12
    • US10556927
    • 2003-05-13
    • Florin UdreaDavid Garner
    • Florin UdreaDavid Garner
    • H01L29/94
    • H01L29/7824H01L29/0653H01L29/0692H01L29/0696H01L29/7394H01L29/8086H01L29/861
    • This invention is generally concerned with semiconductor-on-insulator devices, particularly for high voltage applications. A lateral semiconductor-on-insulator device is described, comprising: a semiconductor substrate; an insulating layer on said semiconductor substrate; and a lateral semiconductor device on said insulator; said lateral semiconductor device having: a first region of a first conductivity type; a second region of a second conductivity type laterally spaced apart from said first region; and a drift region extending in a lateral direction between said first region and said second region; and wherein said drift region comprises at least one first zone and at least one second zone adjacent a said first zone, a said first zone having said second conductivity type, a said second zone being an insulating zone, a said first zone being tapered to narrow towards said first region.
    • 本发明通常涉及绝缘体上半导体器件,特别是对于高电压应用。 描述了一种绝缘体侧向半导体器件,包括:半导体衬底; 在所述半导体衬底上的绝缘层; 和在所述绝缘体上的横向半导体器件; 所述横向半导体器件具有:第一导电类型的第一区域; 与所述第一区域横向间隔开的第二导电类型的第二区域; 以及在所述第一区域和所述第二区域之间沿横向方向延伸的漂移区域; 并且其中所述漂移区包括至少一个第一区和邻近所述第一区的至少一个第二区,具有所述第二导电类型的所述第一区,所述第二区是绝缘区,所述第一区逐渐缩窄 朝向第一个地区。
    • 5. 发明申请
    • Lateral soi semiconductor device
    • 侧面半导体器件
    • US20070120187A1
    • 2007-05-31
    • US10556927
    • 2003-05-13
    • Florin UdreaDavid Garner
    • Florin UdreaDavid Garner
    • H01L27/12H01L27/01H01L31/0392
    • H01L29/7824H01L29/0653H01L29/0692H01L29/0696H01L29/7394H01L29/8086H01L29/861
    • This invention is generally concerned with semiconductor-on-insulator devices, particularly for high voltage applications. A lateral semiconductor-on-insulator device is described, comprising: a semiconductor substrate; an insulating layer on said semiconductor substrate; and a lateral semiconductor device on said insulator; said lateral semiconductor device having: a first region of a first conductivity type; a second region of a second conductivity type laterally spaced apart from said first region; and a drift region extending in a lateral direction between said first region and said second region; and wherein said drift region comprises at least one first zone and at least one second zone adjacent a said first zone, a said first zone having said second conductivity type, a said second zone being an insulating zone, a said first zone being tapered to narrow towards said first region.
    • 本发明通常涉及绝缘体上半导体器件,特别是对于高电压应用。 描述了一种绝缘体侧向半导体器件,包括:半导体衬底; 在所述半导体衬底上的绝缘层; 和在所述绝缘体上的横向半导体器件; 所述横向半导体器件具有:第一导电类型的第一区域; 与所述第一区域横向间隔开的第二导电类型的第二区域; 以及在所述第一区域和所述第二区域之间沿横向方向延伸的漂移区域; 并且其中所述漂移区包括至少一个第一区和邻近所述第一区的至少一个第二区,具有所述第二导电类型的所述第一区,所述第二区是绝缘区,所述第一区逐渐缩窄 朝向第一个地区。
    • 7. 发明授权
    • Battery pack support with thermal control
    • 电池组支持热控制
    • US08852780B2
    • 2014-10-07
    • US13069270
    • 2011-03-22
    • Richard KleimanSteve AlfordDavid GarnerLen Wolf
    • Richard KleimanSteve AlfordDavid GarnerLen Wolf
    • H01M10/50H01M2/10H01M10/6556H01M10/613H01M10/615H01M10/627
    • H01M10/5004H01M10/613H01M10/615H01M10/627H01M10/6556Y02E60/12
    • A battery support includes a rigid, thermally conductive upper plate having first and second opposing major surfaces. The support also includes at least one lower plate disposed on the second major surface and comprising a plurality of protrusions extending away from the second major surface and in fluid communication, the plurality of protrusions defining a first manifold portion, a second manifold portion, and plurality of non-linear passages extending along a first direction between the first and second manifolds, a cross-section of the plurality of protrusions defining the plurality of non-linear passages comprising a curved portion with a width that is at least twice the height of the curved portion. The support further includes a first conduit in fluid communication with the first manifold portion and a second conduit in fluid communication with the second manifold portion.
    • 电池支撑件包括具有第一和第二相对主表面的刚性导热上板。 所述支撑件还包括设置在所述第二主表面上的至少一个下板,并且包括多个突出部,所述突出部远离所述第二主表面延伸并且处于流体连通状态,所述多个突出部限定第一歧管部分,第二歧管部分和多个 在第一和第二歧管之间沿着第一方向延伸的非直线通道,限定多个非直线通道的多个突起的横截面包括弯曲部分,该弯曲部分的宽度是至少两倍于 弯曲部分。 支撑件还包括与第一歧管部分流体连通的第一导管和与第二歧管部分流体连通的第二导管。
    • 9. 发明申请
    • Power supply driver circuit
    • 电源驱动电路
    • US20070182386A1
    • 2007-08-09
    • US11639820
    • 2006-12-15
    • David Garner
    • David Garner
    • G05F1/613
    • H03K19/018521
    • A high-side driver circuit for a switching power supply, configured to translate a low-side switching control signal referenced to a first ground rail to a high-side switching control signal referenced to a second, high-side ground rail for driving a switching control connection of a power switching device, the high-side driver circuit including first and second inputs to receive first and second low-side switching control signals; a differential amplifier having a differential pair of inputs coupled to said first and second inputs and having an output, the differential amplifier having a ground connection for connection to said high-side ground rail and a power connection to receive a power supply from a second voltage supply; and an output coupled to said differential amplifier output to provide the high-side switching control signal.
    • 一种用于开关电源的高侧驱动器电路,被配置为将参考第一接地线的低侧开关控制信号转换为参考第二高侧接地线的高侧开关控制信号,用于驱动开关 控制电力开关装置的连接,所述高侧驱动电路包括第一和第二输入端以接收第一和第二低端开关控制信号; 差分放大器,其具有耦合到所述第一和第二输入并具有输出的差分输入对,所述差分放大器具有用于连接到所述高侧接地导轨的接地连接和用于从第二电压接收电力的电源连接 供应; 以及耦合到所述差分放大器输出以提供高侧开关控制信号的输出。