专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110207054A1 SELF-ALIGNED, SUB-WAVELENGTH OPTICAL LITHOGRAPHY 有权
标题翻译：自对准，亚波长光学光刻
公开(公告)号：US20110207054A1
公开(公告)日：2011-08-25
申请号：US13100458
申请日：2011-05-04
申请人： David Fattal , Jason Blackstock
发明人： David Fattal , Jason Blackstock
IPC分类号： G03F7/20
CPC分类号： G03F7/201 , G03F7/2022 , G03F7/2051
摘要： Embodiments of the invention provide a method and an apparatus for performing self-aligned, sub-wavelength optical lithography. One embodiment provides a region of photoresist above a conductive surface having a plurality of periodically arrayed openings extending therethrough. At least a portion of the region of photoresist is then exposed to a light, wherein the intensity of the light is less than the intensity required to cure the photoresist. In so doing, at least one self-aligned, sub-wavelength location in at least one location of the region of photoresist is cured.
摘要翻译：本发明的实施例提供一种用于执行自对准亚波长光刻技术的方法和装置。一个实施例提供在导电表面上方的光致抗蚀剂区域，其具有延伸穿过其中的多个周期性排列的开口。然后光致抗蚀剂区域的至少一部分暴露于光，其中光的强度小于固化光致抗蚀剂所需的强度。这样做时，光致抗蚀剂区域的至少一个位置中的至少一个自对准的亚波长位置被固化。

2. 发明申请

US20110177647A1 METHOD AND APPARATUS FOR FORMING A PHOTODIODE 有权
标题翻译：形成光电离体的方法和装置
公开(公告)号：US20110177647A1
公开(公告)日：2011-07-21
申请号：US13026761
申请日：2011-02-14
申请人： David Fattal , Jason Blackstock , Raymond Beausoleil
发明人： David Fattal , Jason Blackstock , Raymond Beausoleil
IPC分类号： H01L31/18
CPC分类号： H01L31/1085 , H01L31/02024 , H01L31/02162 , H01L31/022408
摘要： A method for forming a photodiode is provided. The method comprises: providing a region of semiconductor material having a first surface and a second surface; coupling a first conductive layer to the first surface of the semiconductor material; and coupling a second conductive surface to the second surface of the semiconductor material to form a photodiode, the second conductive surface comprising a metal surface having a two-dimensional periodic array of openings therethrough, wherein the photodiode is configured to be operated such that light is incident on the second conductive surface. A method for reducing the required thickness of a photodiode is also provided.
摘要翻译：提供了形成光电二极管的方法。该方法包括：提供具有第一表面和第二表面的半导体材料区域; 将第一导电层耦合到半导体材料的第一表面; 以及将第二导电表面耦合到所述半导体材料的第二表面以形成光电二极管，所述第二导电表面包括金属表面，所述金属表面具有穿过其的开口的二维周期性阵列，其中所述光电二极管被配置为使得所述光事件在第二导电表面上。还提供了减少光电二极管所需厚度的方法。

3. 发明授权

US07964925B2 Photodiode module and apparatus including multiple photodiode modules 有权
标题翻译：光电二极管模块和包括多个光电二极管模块的设备
公开(公告)号：US07964925B2
公开(公告)日：2011-06-21
申请号：US11654046
申请日：2007-01-17
申请人： David Fattal , Jason Blackstock , Duncan Stewart
发明人： David Fattal , Jason Blackstock , Duncan Stewart
IPC分类号： H01L31/06 , H01L27/14
CPC分类号： H01L31/02024 , H01L27/1446 , H01L31/02162 , H01L31/022408 , H01L31/1085
摘要： Various embodiments of the present invention are directed to a photodiode module including a structure configured to selectively couple light to a dielectric-surface mode of a photonic crystal of the photodiode module. In one embodiment of the present invention, a photodiode module includes a semiconductor structure having a p-region and an n-region. The photodiode module further includes a photonic crystal having a surface positioned adjacent to the semiconductor structure. A diffraction grating of the photodiode module may be positioned and configured to selectively couple light incident on the diffraction grating to a dielectric-surface mode associated with the surface of the photonic crystal. In another embodiment of the present invention, a photodiode apparatus includes multiple, stacked photodiode modules, each of which is configured to selectively absorb light at a selected wavelength or range of wavelengths.
摘要翻译：本发明的各种实施例涉及一种光电二极管模块，其包括被配置为选择性地将光耦合到光电二极管模块的光子晶体的电介质表面模式的结构。在本发明的一个实施例中，光电二极管模块包括具有p区和n区的半导体结构。光电二极管模块还包括具有邻近半导体结构定位的表面的光子晶体。可以将光电二极管模块的衍射光栅定位和配置为将入射在衍射光栅上的光选择性地耦合到与光子晶体的表面相关联的电介质表面模式。在本发明的另一实施例中，光电二极管装置包括多个堆叠的光电二极管模块，每个光电二极管模块被配置为选择性地吸收所选择的波长或波长范围的光。

4. 发明授权

US08268534B2 Self-aligned, sub-wavelength optical lithography 有权
标题翻译：自对准，亚波长光刻
公开(公告)号：US08268534B2
公开(公告)日：2012-09-18
申请号：US13100458
申请日：2011-05-04
申请人： David Fattal , Jason Blackstock
发明人： David Fattal , Jason Blackstock
IPC分类号： G03F7/20
CPC分类号： G03F7/201 , G03F7/2022 , G03F7/2051
摘要： Embodiments of the invention provide a method and an apparatus for performing self-aligned, sub-wavelength optical lithography. One embodiment provides a region of photoresist above a conductive surface having a plurality of periodically arrayed openings extending therethrough. At least a portion of the region of photoresist is then exposed to a light, wherein the intensity of the light is less than the intensity required to cure the photoresist. In so doing, at least one self-aligned, sub-wavelength location in at least one location of the region of photoresist is cured.
摘要翻译：本发明的实施例提供一种用于执行自对准亚波长光刻技术的方法和装置。一个实施例提供在导电表面上方的光致抗蚀剂区域，其具有延伸穿过其中的多个周期性排列的开口。然后光致抗蚀剂区域的至少一部分暴露于光，其中光的强度小于固化光致抗蚀剂所需的强度。这样做时，光致抗蚀剂区域的至少一个位置中的至少一个自对准的亚波长位置被固化。

5. 发明授权

US07965381B2 Self-aligned, sub-wavelength optical lithography 有权
标题翻译：自对准，亚波长光刻
公开(公告)号：US07965381B2
公开(公告)日：2011-06-21
申请号：US11580646
申请日：2006-10-13
申请人： David Fattal , Jason Blackstock
发明人： David Fattal , Jason Blackstock
IPC分类号： G03B27/72 , G03F7/26
CPC分类号： G03F7/201 , G03F7/2022 , G03F7/2051
摘要： Embodiments of the invention provide a method and an apparatus for performing self-aligned, sub-wavelength optical lithography. One embodiment provides a region of photoresist above a conductive surface having a plurality of periodically arrayed openings extending therethrough. At least a portion of the region of photoresist is then exposed to a light, wherein the intensity of the light is less than the intensity required to cure the photoresist. In so doing, at least one self-aligned, sub-wavelength location in at least one location of the region of photoresist is cured.
摘要翻译：本发明的实施例提供一种用于执行自对准亚波长光刻技术的方法和装置。一个实施例提供在导电表面上方的光致抗蚀剂区域，其具有延伸穿过其中的多个周期性排列的开口。然后光致抗蚀剂区域的至少一部分暴露于光，其中光的强度小于固化光致抗蚀剂所需的强度。这样做时，光致抗蚀剂区域的至少一个位置中的至少一个自对准的亚波长位置被固化。

6. 发明授权

US07923802B2 Method and apparatus for forming a photodiode 有权
标题翻译：用于形成光电二极管的方法和装置
公开(公告)号：US07923802B2
公开(公告)日：2011-04-12
申请号：US11580647
申请日：2006-10-13
申请人： David Fattal , Jason Blackstock , Raymond Beausoleil
发明人： David Fattal , Jason Blackstock , Raymond Beausoleil
IPC分类号： H01L31/0224
CPC分类号： H01L31/1085 , H01L31/02024 , H01L31/02162 , H01L31/022408
摘要： Embodiments of the invention provide a method and an apparatus for forming a photodiode. One embodiment provides a thin dielectric layer sandwiched between two metallic plates (electrodes), one or both of which are periodically patterned in one or two dimensions. The effect of the pattern is to couple incident light within some range of wavelength and/or incidence angles to surface excitations of the metal surface called surface plasmons, enhancing the electric field near the surface and resulting in dramatically increased photo-absorption and carrier generation in the dielectric layer.
摘要翻译：本发明的实施例提供一种用于形成光电二极管的方法和装置。一个实施例提供夹在两个金属板（电极）之间的薄介电层，其中一个或两个在一个或两个维度上周期性地构图。图案的作用是将波长和/或入射角的一些范围内的入射光耦合到称为表面等离子体激元的金属表面的表面激发，增强表面附近的电场，并导致光吸收和载流子产生的显着增加电介质层。

7. 发明授权

US08138013B2 Method and apparatus for forming a photodiode 有权
标题翻译：用于形成光电二极管的方法和装置
公开(公告)号：US08138013B2
公开(公告)日：2012-03-20
申请号：US13026761
申请日：2011-02-14
申请人： David Fattal , Jason Blackstock , Raymond Beausoleil
发明人： David Fattal , Jason Blackstock , Raymond Beausoleil
IPC分类号： H01L31/18 , H01L31/0236 , H01L31/0224 , H01L21/28
CPC分类号： H01L31/1085 , H01L31/02024 , H01L31/02162 , H01L31/022408
摘要： A method for forming a photodiode is provided. The method comprises: providing a region of semiconductor material having a first surface and a second surface; coupling a first conductive layer to the first surface of the semiconductor material; and coupling a second conductive surface to the second surface of the semiconductor material to form a photodiode, the second conductive surface comprising a metal surface having a two-dimensional periodic array of openings therethrough, wherein the photodiode is configured to be operated such that light is incident on the second conductive surface. A method for reducing the required thickness of a photodiode is also provided.
摘要翻译：提供了形成光电二极管的方法。该方法包括：提供具有第一表面和第二表面的半导体材料区域; 将第一导电层耦合到半导体材料的第一表面; 以及将第二导电表面耦合到所述半导体材料的第二表面以形成光电二极管，所述第二导电表面包括金属表面，所述金属表面具有穿过其的开口的二维周期性阵列，其中所述光电二极管被配置为被操作，事件在第二导电表面上。还提供了减少光电二极管所需厚度的方法。

8. 发明授权

US07466410B2 Photonic-based sensors and methods for detecting analytes 有权
公开(公告)号：US07466410B2
公开(公告)日：2008-12-16
申请号：US11698320
申请日：2007-01-26
申请人： Mihail Sigalas , David Fattal , Jason Blackstock , Raymond G. Beausoleil
发明人： Mihail Sigalas , David Fattal , Jason Blackstock , Raymond G. Beausoleil
IPC分类号： G01J3/18 , G01J3/42
CPC分类号： G01N21/59 , B82Y20/00 , G01N21/7743 , G01N2021/7783
摘要： Various embodiments of the present invention are directed to analyte detection methods and to photonic-based sensors that employ photonic crystal gratings to detect analytes. In one embodiment of the present invention, a photonic-based sensor includes a source, a photonic crystal, and a photodetector. The source is configured to output electromagnetic radiation. The photonic crystal includes a photonic crystal grating positioned to receive the electromagnetic radiation. The electromagnetic radiation interacts with the photonic crystal grating and an analyte situated on or in the photonic crystal grating to produce a transmission spectrum that characterizes the analyte. The photodetector is positioned to detect the transmission spectrum.

9. 发明申请

US20080165338A1 Self-aligned, sub-wavelength optical lithography 有权
标题翻译：自对准，亚波长光刻
公开(公告)号：US20080165338A1
公开(公告)日：2008-07-10
申请号：US11580646
申请日：2006-10-13
申请人： David Fattal , Jason Blackstock
发明人： David Fattal , Jason Blackstock
IPC分类号： G03B27/72 , G03B27/32 , G03F7/00 , G03F7/26
CPC分类号： G03F7/201 , G03F7/2022 , G03F7/2051
摘要： Embodiments of the invention provide a method and an apparatus for performing self-aligned, sub-wavelength optical lithography. One embodiment provides a region of photoresist above a conductive surface having a plurality of periodically arrayed openings extending therethrough. At least a portion of the region of photoresist is then exposed to a light, wherein the intensity of the light is less than the intensity required to cure the photoresist. In so doing, at least one self-aligned, sub-wavelength location in at least one location of the region of photoresist is cured.
摘要翻译：本发明的实施例提供一种用于执行自对准亚波长光刻技术的方法和装置。一个实施例提供在导电表面上方的光致抗蚀剂区域，其具有延伸穿过其中的多个周期性排列的开口。然后光致抗蚀剂区域的至少一部分暴露于光，其中光的强度小于固化光致抗蚀剂所需的强度。这样做时，光致抗蚀剂区域的至少一个位置中的至少一个自对准的亚波长位置被固化。

10. 发明授权

US08202755B2 Photodiode module and apparatus including multiple photodiode modules 有权
标题翻译：光电二极管模块和包括多个光电二极管模块的设备
公开(公告)号：US08202755B2
公开(公告)日：2012-06-19
申请号：US13108733
申请日：2011-05-16
申请人： David Fattal , Jason Blackstock , Duncan Stewart
发明人： David Fattal , Jason Blackstock , Duncan Stewart
IPC分类号： H01L31/18
CPC分类号： H04N1/053 , H04N2201/04787 , H04N2201/04793 , H04N2201/04794
摘要： Various embodiments of the present invention are directed to a photodiode module including a structure configured to selectively couple light to a dielectric-surface mode of a photonic crystal of the photodiode module. In one embodiment of the present invention, a photodiode module includes a semiconductor structure having a p-region and an n-region. The photodiode module further includes a photonic crystal having a surface positioned adjacent to the semiconductor structure. A diffraction grating of the photodiode module may be positioned and configured to selectively couple light incident on the diffraction grating to a dielectric-surface mode associated with the surface of the photonic crystal. In another embodiment of the present invention, a photodiode apparatus includes multiple, stacked photodiode modules, each of which is configured to selectively absorb light at a selected wavelength or range of wavelengths.
摘要翻译：本发明的各种实施例涉及一种光电二极管模块，其包括被配置为选择性地将光耦合到光电二极管模块的光子晶体的电介质表面模式的结构。在本发明的一个实施例中，光电二极管模块包括具有p区和n区的半导体结构。光电二极管模块还包括具有邻近半导体结构定位的表面的光子晶体。可以将光电二极管模块的衍射光栅定位和配置为将入射在衍射光栅上的光选择性地耦合到与光子晶体的表面相关联的电介质表面模式。在本发明的另一实施例中，光电二极管装置包括多个堆叠的光电二极管模块，每个光电二极管模块被配置为选择性地吸收所选择的波长或波长范围的光。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式