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1. 发明申请

US20100084009A1 Solar Cells 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20100084009A1
公开(公告)日：2010-04-08
申请号：US12531138
申请日：2008-03-14
申请人： David E. Carlson , Murray S. Bennett
发明人： David E. Carlson , Murray S. Bennett
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/062 , H01L31/0745 , H01L31/0747 , Y02E10/547
摘要： A photovoltaic cell comprising a semiconductor wafer comprising a front, light receiving surface and an opposite back surface, a passivation layer on at least the back surface, a doped layer opposite in conductivity type to the wafer over the passivation layer, an induced inversion layer, a dielectric layer over the doped layer, and one or more localized emitter contacts and one or more localized base contacts on at least the back surface extending at least through the dielectric layer; and a neutral surface photovoltaic cell comprising a semiconductor wafer comprising a front, light receiving surface and an opposite back surface, neutral passivation layer on at least the back surface, a dielectric layer over the passivation layer, and one or more localized emitter contacts and one or more localized base contacts on at least the back surface extending at least through the dielectric layer.
摘要翻译：一种包括半导体晶片的光伏电池，包括前面，光接收表面和相对的后表面，在至少背表面上的钝化层，与钝化层上的晶片相反的导电类型的掺杂层，感应反型层，在所述掺杂层上方的电介质层，以及至少延伸至少通过所述电介质层的至少所述背表面上的一个或多个局部发射极触点和一个或多个局部基极触点; 以及包括半导体晶片的中性表面光伏电池，所述半导体晶片包括前面，光接收表面和相对的后表面，至少在所述背表面上的中性钝化层，所述钝化层上的电介质层，以及一个或多个局部发射体触点和一个或至少在至少通过介电层延伸的背表面上的局部基底触点。

2. 发明申请

US20100243041A1 Apparatus and Method for Solar Cells with Laser Fired Contacts in Thermally Diffused Doped Regions 审中-公开
标题翻译：在热扩散掺杂区域中具有激光烧结触头的太阳能电池的装置和方法
公开(公告)号：US20100243041A1
公开(公告)日：2010-09-30
申请号：US12726600
申请日：2010-03-18
申请人： David E. Carlson , Lian Zou , Murray S. Bennett , George Hmung
发明人： David E. Carlson , Lian Zou , Murray S. Bennett , George Hmung
IPC分类号： H01L31/00 , H01L31/18 , H01L31/0248 , H01L31/0232
CPC分类号： H01L31/022441 , H01L31/0682 , H01L31/0747 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： This invention relates to an apparatus and a method for solar cells with laser fired contacts in thermally diffused doped regions. The cell includes a doped wafer and a plurality of first highly doped regions having a first conductivity type. The cell also includes a plurality of second highly doped regions having an opposite conductivity type from the first conductivity type and a passivation layer disposed over at least a portion of each the plurality of first highly doped regions and the plurality of second highly doped regions. The cell also includes a network of conductors having a first conductor and a second conductor, and a plurality of contacts electrically connecting the first highly doped regions with the first conductor and electrically connecting the second highly doped regions with the second conductor.
摘要翻译：本发明涉及一种在热扩散掺杂区域中具有激光烧结触头的太阳能电池的装置和方法。电池包括掺杂晶片和具有第一导电类型的多个第一高掺杂区域。电池还包括多个第二高度掺杂区域，其具有与第一导电类型相反的导电类型，以及钝化层，设置在多个第一高度掺杂区域和多个第二高掺杂区域的至少一部分上。电池还包括具有第一导体和第二导体的导体网络，以及将第一高度掺杂区域与第一导体电连接并将第二高度掺杂区域与第二导体电连接的多个触点。

3. 发明授权

US5646050A Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition 失效
标题翻译：通过高氢稀释的较低温度等离子体沉积产生的非晶硅基器件的性能提高了
公开(公告)号：US5646050A
公开(公告)日：1997-07-08
申请号：US600154
申请日：1996-02-09
申请人： Yaun-Min Li , Murray S. Bennett , Liyou Yang
发明人： Yaun-Min Li , Murray S. Bennett , Liyou Yang
IPC分类号： C23C16/42 , C23C16/50 , H01L21/205 , H01L31/0376 , H01L31/04 , H01L31/075 , H01L31/076 , H01L31/20
CPC分类号： H01L31/076 , H01L31/03767 , H01L31/075 , H01L31/202 , H01L31/204 , Y02B10/12 , Y02E10/548 , Y02P70/521
摘要： High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.
摘要翻译：通过特殊的等离子体沉积工艺生产高质量，稳定的光伏和电子非晶硅器件，其有效地抵抗光诱导的降解和电流引起的退化。通过特殊的等离子体沉积工艺可以经济地制造具有高开路电压和填充因子以及更宽带宽的强大，高效的单结和多结太阳能电池。优选的方法包括在高浓度氢气存在下硅烷的相对较低的温度，高压，辉光放电。

4. 发明授权

US5942049A Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition 失效
标题翻译：通过高氢稀释的较低温度等离子体沉积产生的非晶硅基器件的性能提高了
公开(公告)号：US5942049A
公开(公告)日：1999-08-24
申请号：US820431
申请日：1997-03-12
申请人： Yaun-Min Li , Murray S. Bennett , Liyou Yang
发明人： Yaun-Min Li , Murray S. Bennett , Liyou Yang
IPC分类号： C23C16/42 , C23C16/50 , H01L21/205 , H01L31/0376 , H01L31/04 , H01L31/075 , H01L31/076 , H01L31/20
CPC分类号： H01L31/076 , H01L31/03767 , H01L31/075 , H01L31/202 , H01L31/204 , Y02B10/12 , Y02E10/548 , Y02P70/521
摘要： High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.
摘要翻译：通过特殊的等离子体沉积工艺生产高质量，稳定的光伏和电子非晶硅器件，其有效地抵抗光诱导的降解和电流引起的退化。通过特殊的等离子体沉积工艺可以经济地制造具有高开路电压和填充因子以及更宽带宽的强大，高效的单结和多结太阳能电池。优选的方法包括在高浓度氢气存在下硅烷的相对较低的温度，高压，辉光放电。

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