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1. 发明申请

US20160133767A1 SOLAR CELL EMITTER REGION FABRICATION USING ION IMPLANTATION 审中-公开
公开(公告)号：US20160133767A1
公开(公告)日：2016-05-12
申请号：US15000492
申请日：2016-01-19
申请人： David D. Smith , Timothy Weidman , Staffan Westerberg
发明人： David D. Smith , Timothy Weidman , Staffan Westerberg
IPC分类号： H01L31/0368 , H01L31/0224 , H01L31/0236 , H01L31/18 , H01L31/0288
CPC分类号： H01L31/03685 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/0288 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/1824 , H01L31/1864 , H01L31/1872 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type. First and second conductive contact structures are electrically connected to the first and second polycrystalline silicon emitter regions, respectively.

2. 发明申请

US20160284913A1 SOLAR CELL EMITTER REGION FABRICATION USING SUBSTRATE-LEVEL ION IMPLANTATION 审中-公开
标题翻译：太阳能电池区域制造使用基板级离子植入
公开(公告)号：US20160284913A1
公开(公告)日：2016-09-29
申请号：US14672071
申请日：2015-03-27
申请人： Staffan Westerberg , Timothy Weidman , David D. Smith
发明人： Staffan Westerberg , Timothy Weidman , David D. Smith
IPC分类号： H01L31/065 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/1864 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions using substrate-level ion implantation, and resulting solar cells, are described. In an example, a method of fabricating a solar cell involves forming a lightly doped region in a semiconductor substrate by ion implantation, the lightly doped region of a first conductivity type of a first concentration. The method also involves forming a first plurality of dopant regions of the first conductivity type of a second, higher, concentration by ion implantation, the first plurality of dopant regions overlapping with a first portion of the lightly doped region. The method also involves forming a second plurality of dopant regions by ion implantation, the second plurality of dopant regions having a second conductivity type of a concentration higher than the first concentration, and the second plurality of dopant regions overlapping with a second portion of the lightly doped region and alternating with but not overlapping the first plurality of dopant regions.
摘要翻译：描述了使用衬底级离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。在一个实例中，制造太阳能电池的方法包括通过离子注入在半导体衬底中形成轻掺杂区域，即第一浓度的第一导电类型的轻掺杂区域。该方法还包括通过离子注入形成第一导电类型的第一导电类型的第一多个掺杂区，第一多个掺杂区与轻掺杂区的第一部分重叠。该方法还涉及通过离子注入形成第二多个掺杂剂区域，第二多个掺杂剂区域具有高于第一浓度的浓度的第二导电类型，并且第二多个掺杂剂区域与轻微的第二部分重叠并且与第一多个掺杂区域交替而不重叠。

3. 发明申请

US20150380599A1 SOLAR CELL EMITTER REGION FABRICATION USING ION IMPLANTATION 有权
标题翻译：太阳能电池发射区使用离子植入制造
公开(公告)号：US20150380599A1
公开(公告)日：2015-12-31
申请号：US14320438
申请日：2014-06-30
申请人： David D. Smith , Timothy Weidman , Staffan Westerberg
发明人： David D. Smith , Timothy Weidman , Staffan Westerberg
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0368
CPC分类号： H01L31/03685 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/0288 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/1824 , H01L31/1864 , H01L31/1872 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type. First and second conductive contact structures are electrically connected to the first and second polycrystalline silicon emitter regions, respectively.
摘要翻译：描述了使用离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。在一个示例中，背接触太阳能电池包括具有光接收表面和背表面的晶体硅衬底。第一多晶硅发射极区域设置在晶体硅衬底之上。第一多晶硅发射极区域掺杂有第一导电类型的掺杂剂杂质种类，并且还包括与第一导电类型的掺杂杂质种类不同的辅助杂质种类。第二多晶硅发射极区域设置在晶体硅衬底之上并且与第一多晶硅发射极区域相邻但分离。第二多晶硅发射极区掺杂有第二相反导电类型的掺杂杂质物质。第一和第二导电接触结构分别电连接到第一和第二多晶硅发射极区域。

4. 发明授权

US09577126B2 Solar cell emitter region fabrication using ion implantation 有权
标题翻译：使用离子注入的太阳能电池发射极区域制造
公开(公告)号：US09577126B2
公开(公告)日：2017-02-21
申请号：US15000492
申请日：2016-01-19
申请人： David D. Smith , Timothy Weidman , Staffan Westerberg
发明人： David D. Smith , Timothy Weidman , Staffan Westerberg
IPC分类号： H01L31/0368 , H01L31/18 , H01L31/0224 , H01L31/0236 , H01L31/0288 , H01L31/0745 , H01L31/0747
CPC分类号： H01L31/03685 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/0288 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/1824 , H01L31/1864 , H01L31/1872 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type. First and second conductive contact structures are electrically connected to the first and second polycrystalline silicon emitter regions, respectively.
摘要翻译：描述了使用离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。在一个示例中，背接触太阳能电池包括具有光接收表面和背表面的晶体硅衬底。第一多晶硅发射极区域设置在晶体硅衬底之上。第一多晶硅发射极区掺杂有第一导电类型的掺杂剂杂质种类，并且还包括与第一导电类型的掺杂杂质种类不同的辅助杂质种类。第二多晶硅发射极区域设置在晶体硅衬底之上并且与第一多晶硅发射极区域相邻但分离。第二多晶硅发射极区掺杂有第二相反导电类型的掺杂杂质物质。第一和第二导电接触结构分别电连接到第一和第二多晶硅发射极区域。

5. 发明授权

US09263625B2 Solar cell emitter region fabrication using ion implantation 有权
标题翻译：使用离子注入的太阳能电池发射极区域制造
公开(公告)号：US09263625B2
公开(公告)日：2016-02-16
申请号：US14320438
申请日：2014-06-30
申请人： David D. Smith , Timothy Weidman , Staffan Westerberg
发明人： David D. Smith , Timothy Weidman , Staffan Westerberg
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0368 , H01L31/0224
CPC分类号： H01L31/03685 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/0288 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/1824 , H01L31/1864 , H01L31/1872 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type. First and second conductive contact structures are electrically connected to the first and second polycrystalline silicon emitter regions, respectively.
摘要翻译：描述了使用离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。在一个示例中，背接触太阳能电池包括具有光接收表面和背表面的晶体硅衬底。第一多晶硅发射极区域设置在晶体硅衬底之上。第一多晶硅发射极区掺杂有第一导电类型的掺杂剂杂质种类，并且还包括与第一导电类型的掺杂杂质种类不同的辅助杂质种类。第二多晶硅发射极区域设置在晶体硅衬底之上并且与第一多晶硅发射极区域相邻但分离。第二多晶硅发射极区掺杂有第二相反导电类型的掺杂杂质物质。第一和第二导电接触结构分别电连接到第一和第二多晶硅发射极区域。

6. 发明申请

US20160284923A1 DEPOSITION APPROACHES FOR EMITTER LAYERS OF SOLAR CELLS 有权
标题翻译：太阳能电池发射层的沉积方法
公开(公告)号：US20160284923A1
公开(公告)日：2016-09-29
申请号：US14866239
申请日：2015-09-25
申请人： Michael C. Johnson , Taiqing Qiu , David D. Smith , Peter John Cousins , Staffan Westerberg
发明人： Michael C. Johnson , Taiqing Qiu , David D. Smith , Peter John Cousins , Staffan Westerberg
IPC分类号： H01L31/18 , H01L31/0224
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/02363 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.
摘要翻译：本文描述了制造太阳能电池的方法和所得到的太阳能电池。在一个示例中，制造太阳能电池的方法包括通过基底表面的自由基氧化或等离子体氧化在基板的表面上形成薄的电介质层。该方法还涉及在薄介电层上形成硅层。该方法还涉及从硅层形成多个发射极区域。

7. 发明申请

US20160043267A1 SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES 有权
公开(公告)号：US20160043267A1
公开(公告)日：2016-02-11
申请号：US14919049
申请日：2015-10-21
申请人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
发明人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
IPC分类号： H01L31/18 , H01L31/0236 , H01L31/0368 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/03682 , H01L31/068 , H01L31/0682 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/182 , H01L31/202 , H01L31/208 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

8. 发明授权

US09634177B2 Solar cell emitter region fabrication with differentiated P-type and N-type region architectures 有权
公开(公告)号：US09634177B2
公开(公告)日：2017-04-25
申请号：US14919049
申请日：2015-10-21
申请人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
发明人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/068 , H01L31/20 , H01L31/0236 , H01L31/0368 , H01L31/0216 , H01L31/0745 , H01L31/0747
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/03682 , H01L31/068 , H01L31/0682 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/182 , H01L31/202 , H01L31/208 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

9. 发明申请

US20170222072A1 SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES 审中-公开
公开(公告)号：US20170222072A1
公开(公告)日：2017-08-03
申请号：US15493021
申请日：2017-04-20
申请人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
发明人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/0236 , H01L31/18 , H01L31/0368
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/03682 , H01L31/068 , H01L31/0682 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/182 , H01L31/202 , H01L31/208 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

10. 发明申请

US20150349180A1 RELATIVE DOPANT CONCENTRATION LEVELS IN SOLAR CELLS 审中-公开
标题翻译：太阳能电池中的相对浓度浓度水平
公开(公告)号：US20150349180A1
公开(公告)日：2015-12-03
申请号：US14292454
申请日：2014-05-30
申请人： David D. Smith , Staffan Westerberg
发明人： David D. Smith , Staffan Westerberg
IPC分类号： H01L31/065 , H01L31/0288 , H01L31/18 , H01L31/0368
CPC分类号： H01L31/065 , H01L31/0288 , H01L31/03682 , H01L31/1804 , H01L31/182 , H01L31/1868 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell may include a substrate having a front side facing the sun to receive solar radiation during normal operation and a backside opposite the front side. The solar cell may further include a polysilicon layer formed over the backside of the substrate. A P-type diffusion region and an N-type diffusion region may be formed in the polysilicon layer to provide a butting PN junction. The P-type diffusion region may have a first dopant concentration level and the N-type diffusion region may have a second dopant concentration level such that the first dopant concentration level is less than the second dopant concentration level.
摘要翻译：太阳能电池可以包括在正常操作期间具有面向太阳以接收太阳辐射的正面的基板和与正面相反的背面。太阳能电池还可以包括形成在衬底背面上的多晶硅层。可以在多晶硅层中形成P型扩散区和N型扩散区，以提供对接PN结。 P型扩散区可以具有第一掺杂剂浓度水平，并且N型扩散区可以具有第二掺杂剂浓度水平，使得第一掺杂剂浓度水平小于第二掺杂剂浓度水平。

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