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1. 发明授权

US08527945B2 Method and system for integrating multiple scripts 有权
标题翻译：集成多个脚本的方法和系统
公开(公告)号：US08527945B2
公开(公告)日：2013-09-03
申请号：US12776310
申请日：2010-05-07
申请人： David D. Smith , John Colosi
发明人： David D. Smith , John Colosi
IPC分类号： G06F9/44
CPC分类号： H04L43/50 , G06F8/30 , G06F11/3672 , H04L29/12066 , H04L61/1511
摘要： A method of testing the server implementation of the Domain Name System protocol by using a first body of computer code in a first programming language capable of sending and receiving DNS requests, and a second body of computer readable code in a second programming language capable of generating DNS requests and verifying responses. The second programming language may be tailored to writing code being capable of generating Domain Name System requests and verifying the response thereby allowing the program to be efficiently reconfigured to test different aspects of the server.
摘要翻译：一种通过使用能够发送和接收DNS请求的第一种编程语言的第一代计算机代码来测试域名系统协议的服务器实现的方法，以及能够产生第二编程语言的第二机体的计算机可读代码 DNS请求和验证响应。第二编程语言可以被定制以编写能够生成域名系统请求并验证响应的代码，从而允许有效地重新配置程序来测试服务器的不同方面。

2. 发明申请

US20170236966A1 CONTACTS FOR SOLAR CELLS 审中-公开
公开(公告)号：US20170236966A1
公开(公告)日：2017-08-17
申请号：US15499732
申请日：2017-04-27
申请人： Matthieu Moors , David D. Smith , Gabriel Harley , Taeseok Kim
发明人： Matthieu Moors , David D. Smith , Gabriel Harley , Taeseok Kim
IPC分类号： H01L31/061 , H01L31/18
CPC分类号： H01L31/061 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1864 , Y02E10/547
摘要： A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

3. 发明授权

US09716205B2 Solar cell emitter region fabrication using ion implantation 有权
公开(公告)号：US09716205B2
公开(公告)日：2017-07-25
申请号：US15197616
申请日：2016-06-29
申请人： Timothy Weidman , David D. Smith
发明人： Timothy Weidman , David D. Smith
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/068 , H01L31/0352
CPC分类号： H01L31/182 , H01L31/022441 , H01L31/035272 , H01L31/0682 , H01L31/1864 , H01L31/1872 , H01L31/1876 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a method of fabricating alternating N-type and P-type emitter regions of a solar cell involves forming a silicon layer above a substrate. Dopant impurity atoms of a first conductivity type are implanted, through a first shadow mask, in the silicon layer to form first implanted regions and resulting in non-implanted regions of the silicon layer. Dopant impurity atoms of a second, opposite, conductivity type are implanted, through a second shadow mask, in portions of the non-implanted regions of the silicon layer to form second implanted regions and resulting in remaining non-implanted regions of the silicon layer. The remaining non-implanted regions of the silicon layer are removed with a selective etch process, while the first and second implanted regions of the silicon layer are annealed to form doped polycrystalline silicon emitter regions.

4. 发明授权

US09653638B2 Contacts for solar cells formed by directing a laser beam with a particular shape on a metal foil over a dielectric region 有权
公开(公告)号：US09653638B2
公开(公告)日：2017-05-16
申请号：US14137970
申请日：2013-12-20
申请人： Matthieu Moors , David D. Smith , Gabriel Harley , Taeseok Kim
发明人： Matthieu Moors , David D. Smith , Gabriel Harley , Taeseok Kim
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/061 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1864 , Y02E10/547
摘要： A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

5. 发明授权

US09634177B2 Solar cell emitter region fabrication with differentiated P-type and N-type region architectures 有权
公开(公告)号：US09634177B2
公开(公告)日：2017-04-25
申请号：US14919049
申请日：2015-10-21
申请人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
发明人： Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/068 , H01L31/20 , H01L31/0236 , H01L31/0368 , H01L31/0216 , H01L31/0745 , H01L31/0747
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/03682 , H01L31/068 , H01L31/0682 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/182 , H01L31/202 , H01L31/208 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

6. 发明授权

US09520507B2 Solar cells with improved lifetime, passivation and/or efficiency 有权
标题翻译：具有改善寿命，钝化和/或效率的太阳能电池
公开(公告)号：US09520507B2
公开(公告)日：2016-12-13
申请号：US14579935
申请日：2014-12-22
申请人： David D. Smith , Tim Dennis , Russelle De Jesus Tabajonda
发明人： David D. Smith , Tim Dennis , Russelle De Jesus Tabajonda
IPC分类号： H01L27/15 , H01L31/02 , H01L31/18 , H01L31/0368 , H01L31/0224
CPC分类号： H01L31/02008 , H01L21/3221 , H01L31/02167 , H01L31/022441 , H01L31/0368 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/186 , H01L31/1864 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
摘要翻译：制造太阳能电池的方法可以包括在硅衬底上形成电介质区域。该方法还可以包括在电介质区域上形成发射极区域，并在硅衬底的表面上形成掺杂区域。在一个实施例中，该方法可以包括在高于900摄氏度的温度下加热硅衬底以将杂质吸收到发射极区域，并将掺杂剂从掺杂剂区域驱动到硅衬底的一部分。

7. 发明申请

US20160329441A1 SOLAR CELLS WITH IMPROVED LIFETIME, PASSIVATION AND/OR EFFICIENCY 审中-公开
公开(公告)号：US20160329441A1
公开(公告)日：2016-11-10
申请号：US15213273
申请日：2016-07-18
申请人： David D. Smith , Tim Dennis , Russelle De Jesus Tabajonda
发明人： David D. Smith , Tim Dennis , Russelle De Jesus Tabajonda
IPC分类号： H01L31/02 , H01L31/0368 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/02008 , H01L21/3221 , H01L31/02167 , H01L31/022441 , H01L31/0368 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/186 , H01L31/1864 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

8. 发明申请

US20160284917A1 Passivation Layer for Solar Cells 审中-公开
标题翻译：太阳能电池钝化层
公开(公告)号：US20160284917A1
公开(公告)日：2016-09-29
申请号：US14672072
申请日：2015-03-27
申请人： Seung Bum Rim , David D. Smith , Michael C. Johnson , Christine Bourdet Simmons
发明人： Seung Bum Rim , David D. Smith , Michael C. Johnson , Christine Bourdet Simmons
IPC分类号： H01L31/075 , H01L31/0216 , H01L31/077 , H01L31/0376 , H01L31/0224
CPC分类号： H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/0747 , Y02E10/50
摘要： Methods of fabricating solar cells having passivation layers, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a first surface and a second surface. A plurality of emitter regions is disposed on the first surface of the substrate and spaced apart from one another. An amorphous silicon passivation layer is disposed on each of the plurality of emitter regions and between each of the plurality of emitter regions, directly on an exposed portion of the first surface of the substrate.
摘要翻译：描述了制造具有钝化层的太阳能电池的方法和所得到的太阳能电池。在一个示例中，太阳能电池包括具有第一表面和第二表面的基板。多个发射极区域设置在基板的第一表面上并且彼此间隔开。非晶硅钝化层设置在多个发射极区域中的每一个上，并且在多个发射极区域中的每一个之间，直接位于衬底的第一表面的暴露部分上。

9. 发明申请

US20160233348A1 SOLAR CELLS WITH TUNNEL DIELECTRICS 审中-公开
标题翻译：具有隧道电介质的太阳能电池
公开(公告)号：US20160233348A1
公开(公告)日：2016-08-11
申请号：US15135225
申请日：2016-04-21
申请人： David D. Smith
发明人： David D. Smith
IPC分类号： H01L31/0216 , H01L31/02 , H01L31/068 , H01L31/028 , H01L31/0376
摘要： A solar cell can have a first dielectric formed over a it doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.
摘要翻译：太阳能电池可以具有在硅衬底的其掺杂区域上形成的第一电介质。太阳能电池可以具有在硅衬底的第二掺杂区域上形成的第二电介质，其中第一电介质是与第二电介质不同类型的电介质。可以在第一和第二电介质上形成掺杂半导体。可以在掺杂半导体上形成正型金属和负型金属。

10. 发明申请

US20160072000A1 FRONT CONTACT HETEROJUNCTION PROCESS 审中-公开
标题翻译：前接触异常过程
公开(公告)号：US20160072000A1
公开(公告)日：2016-03-10
申请号：US14578216
申请日：2014-12-19
申请人： David D. Smith
发明人： David D. Smith
IPC分类号： H01L31/18 , H01L31/0236 , H01L31/068 , H01L31/0368 , H01L31/0224
CPC分类号： H01L31/1804 , H01L31/02363 , H01L31/0745 , H01L31/0747 , H01L31/075 , H01L31/1872 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods of fabricating solar cells using improved front contact heterojunction processes, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having first and second light-receiving surfaces. A tunnel dielectric layer is disposed on the first and second light-receiving surfaces. An N-type polycrystalline silicon layer is disposed on the portion of the tunnel dielectric layer disposed on the first light-receiving surface. A P-type polycrystalline silicon layer is disposed on the portion of the tunnel dielectric layer disposed on the second light-receiving surface. A transparent conductive oxide layer is disposed on the N-type polycrystalline silicon layer and on the P-type polycrystalline silicon layer. A first set of conductive contacts is disposed on the portion of the transparent conductive oxide layer disposed on the N-type polycrystalline silicon layer. A second set of conductive contacts is disposed on the portion of the transparent conductive oxide layer disposed on the P-type polycrystalline silicon layer.
摘要翻译：描述了使用改进的前接触异质结工艺制造太阳能电池的方法，以及所得到的太阳能电池。在一个示例中，太阳能电池包括具有第一和第二光接收表面的基板。隧道介电层设置在第一和第二光接收表面上。 N型多晶硅层设置在设置在第一受光面上的隧道介电层的部分上。 P型多晶硅层设置在设置在第二受光面上的隧道介电层的部分上。在N型多晶硅层和P型多晶硅层上设置透明导电氧化物层。第一组导电触点设置在设置在N型多晶硅层上的透明导电氧化物层的部分上。第二组导电触点设置在设置在P型多晶硅层上的透明导电氧化物层的部分上。

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