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1. 发明授权

US08591634B2 Method and equipment for selectively collecting process effluent 有权
标题翻译：选择性收集工艺流出物的方法和设备
公开(公告)号：US08591634B2
公开(公告)日：2013-11-26
申请号：US13009400
申请日：2011-01-19
申请人： David Charles Winchester , Matthew John Bosco , Gerald W. Klein , Isaac Patrick West , Richard Linton Samsal , Douglas Paul Dee , Andrew David Johnson , Eugene Joseph Karwacki, Jr.
发明人： David Charles Winchester , Matthew John Bosco , Gerald W. Klein , Isaac Patrick West , Richard Linton Samsal , Douglas Paul Dee , Andrew David Johnson , Eugene Joseph Karwacki, Jr.
IPC分类号： B01D53/02
CPC分类号： B01D53/04 , B01D2256/18 , B01D2258/0216 , B01D2259/402 , Y10T137/7837
摘要： An apparatus and process for recovering a desired gas such as xenon difluoride, xenon, argon, helium or neon, from the effluent of a chemical process reactor that utilizes such gases alone or in a gas mixture or in a molecule that becomes decomposed wherein the chemical process reactor uses a sequence of different gas composition not all of which contain the desired gas and the desired gas is captured and recovered substantially only during the time the desired gas is in the effluent.
摘要翻译：用于从化学处理反应器的流出物中单独或以气体混合物或分解成分解的分子中回收所需气体如二氯化氙，氙气，氩气，氦气或氖气的设备和方法，其中化学过程反应器使用不同于所有气体组合的序列，其中所有气体组成都不包含所需气体，并且所需气体基本上仅在所需气体在流出物中的时间内被捕获和回收。

2. 发明申请

US20120012201A1 METHOD AND EQUIPMENT FOR SELECTIVELY COLLECTING PROCESS EFFLUENT 有权
标题翻译：选择过程流程的方法和设备
公开(公告)号：US20120012201A1
公开(公告)日：2012-01-19
申请号：US13009400
申请日：2011-01-19
申请人： David Charles Winchester , Matthew John Bosco , Gerald W. Klein , Isaac Patrick West , Richard Linton Samsal , Douglas Paul Dee , Andrew David Johnson , Eugene Joseph Karwacki, JR.
发明人： David Charles Winchester , Matthew John Bosco , Gerald W. Klein , Isaac Patrick West , Richard Linton Samsal , Douglas Paul Dee , Andrew David Johnson , Eugene Joseph Karwacki, JR.
IPC分类号： F16K21/04
CPC分类号： B01D53/04 , B01D2256/18 , B01D2258/0216 , B01D2259/402 , Y10T137/7837
摘要： An apparatus and process for recovering a desired gas such as xenon difluoride, xenon, argon, helium or neon, from the effluent of a chemical process reactor that utilizes such gases alone or in a gas mixture or in a molecule that becomes decomposed wherein the chemical process reactor uses a sequence of different gas composition not all of which contain the desired gas and the desired gas is captured and recovered substantially only during the time the desired gas is in the effluent.
摘要翻译：用于从化学处理反应器的流出物中单独或以气体混合物或分解成分解的分子中回收所需气体如二氯化氙，氙气，氩气，氦气或氖气的设备和方法，其中化学过程反应器使用不同于所有气体组合的序列，其中所有气体组成都不包含所需气体，并且所需气体基本上仅在所需气体在流出物中的时间内被捕获和回收。

3. 发明授权

US08535414B2 Recovering of xenon by adsorption process 有权
标题翻译：通过吸附过程回收氙气
公开(公告)号：US08535414B2
公开(公告)日：2013-09-17
申请号：US13236112
申请日：2011-09-19
申请人： Andrew David Johnson , Richard Vincent Pearce , Thomas Stephen Farris , Timothy Christopher Golden , Matthew John Bosco , Eugene Joseph Karwacki, Jr. , David Charles Winchester , Jeffrey Raymond Hufton
发明人： Andrew David Johnson , Richard Vincent Pearce , Thomas Stephen Farris , Timothy Christopher Golden , Matthew John Bosco , Eugene Joseph Karwacki, Jr. , David Charles Winchester , Jeffrey Raymond Hufton
IPC分类号： B01D53/047 , C01B23/00
CPC分类号： B01D53/0476 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/108 , B01D2256/10 , B01D2256/18 , B01D2257/102 , B01D2257/11 , B01D2257/2047 , B01D2257/2066 , B01D2257/55 , B01D2257/80 , C01B23/0057 , C01B23/0068 , C01B2210/0037 , C01B2210/0045 , C01B2210/0051 , C01B2210/0056 , C01B2210/0062 , Y02P20/154
摘要： The present invention discloses the improvements to a vacuum swing adsorption (VSA) process used for Xe recovery. By only collecting the recovered gas mixture after the initial evacuation of N2 from the adsorbent vessel and void space, the recovered Xe is not diluted by N2 contained in the adsorbent vessel and void space. The concentration of the recovered Xe can by increased (high purity), simultaneously little Xenon is lost. During the initial evacuation of N2, the vessel has been evacuated to a pressure less than 1 atmospheric pressure, for example, from 100 to 1 torr.
摘要翻译：本发明公开了用于Xe回收的真空挥发吸附（VSA）方法的改进。通过在从吸附剂容器和空隙空间初始抽出N 2之后仅收集回收的气体混合物，回收的Xe不被包含在吸附剂容器和空隙空间中的N 2稀释。回收的Xe的浓度可以通过增加（高纯度），同时少量的氙被丢失。在N2初始抽真空期间，将容器抽真空至小于1大气压，例如100至1托。

4. 发明申请

US20120079939A1 RECOVERING OF XENON BY ADSORPTION PROCESS 有权
标题翻译：通过吸附过程恢复氙气
公开(公告)号：US20120079939A1
公开(公告)日：2012-04-05
申请号：US13236112
申请日：2011-09-19
申请人： Andrew David Johnson , Richard Vincent Pearce , Thomas Stephen Farris , Timothy Christopher Golden , Matthew John Bosco , Eugene Joseph Karwacki, JR. , David Charles Winchester , Jeffrey Raymond Hufton
发明人： Andrew David Johnson , Richard Vincent Pearce , Thomas Stephen Farris , Timothy Christopher Golden , Matthew John Bosco , Eugene Joseph Karwacki, JR. , David Charles Winchester , Jeffrey Raymond Hufton
IPC分类号： B01D53/04
CPC分类号： B01D53/0476 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/108 , B01D2256/10 , B01D2256/18 , B01D2257/102 , B01D2257/11 , B01D2257/2047 , B01D2257/2066 , B01D2257/55 , B01D2257/80 , C01B23/0057 , C01B23/0068 , C01B2210/0037 , C01B2210/0045 , C01B2210/0051 , C01B2210/0056 , C01B2210/0062 , Y02P20/154
摘要： The present invention discloses the improvements to a vacuum swing adsorption (VSA) process used for Xe recovery. By only collecting the recovered gas mixture after the initial evacuation of N2 from the adsorbent vessel and void space, the recovered Xe is not diluted by N2 contained in the adsorbent vessel and void space. The concentration of the recovered Xe can by increased (high purity), simultaneously little Xenon is lost. During the initial evacuation of N2, the vessel has been evacuated to a pressure less than 1 atmospheric pressure, for example, from 100 to 1 torr.
摘要翻译：本发明公开了用于Xe回收的真空挥发吸附（VSA）方法的改进。通过在从吸附剂容器和空隙空间初始抽出N 2之后仅收集回收的气体混合物，回收的Xe不被包含在吸附剂容器和空隙空间中的N 2稀释。回收的Xe的浓度可以通过增加（高纯度），同时少量的氙被丢失。在N2初始抽真空期间，将容器抽真空至小于1大气压，例如100至1托。

5. 发明申请

US20100022095A1 Selective Etching and Formation of Xenon Difluoride 有权
标题翻译：氙氟化物的选择性蚀刻和形成
公开(公告)号：US20100022095A1
公开(公告)日：2010-01-28
申请号：US12360588
申请日：2009-01-27
申请人： Dingjun Wu , Eugene Joseph Karwacki, JR. , Anupama Mallikarjunan , Andrew David Johnson
发明人： Dingjun Wu , Eugene Joseph Karwacki, JR. , Anupama Mallikarjunan , Andrew David Johnson
IPC分类号： H01L21/3065 , H01L21/302 , H01L21/306 , C01B23/00
CPC分类号： B08B7/0035 , C23C16/4405 , C23F4/00 , H01L21/32135 , H01L21/32136 , H01L21/67028
摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.
摘要翻译：本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体发电机及其混合物。

6. 发明授权

US07581549B2 Method for removing carbon-containing residues from a substrate 失效
标题翻译：从底物中除去含碳残留物的方法
公开(公告)号：US07581549B2
公开(公告)日：2009-09-01
申请号：US11178545
申请日：2005-07-12
申请人： Andrew David Johnson , Hoshang Subawalla , Bing Ji , Raymond Nicholas Vrtis , Eugene Joseph Karwacki, Jr. , Robert Gordon Ridgeway , Peter James Maroulis , Mark Leonard O'Neill , Aaron Scott Lukas , Stephen Andrew Motika
发明人： Andrew David Johnson , Hoshang Subawalla , Bing Ji , Raymond Nicholas Vrtis , Eugene Joseph Karwacki, Jr. , Robert Gordon Ridgeway , Peter James Maroulis , Mark Leonard O'Neill , Aaron Scott Lukas , Stephen Andrew Motika
IPC分类号： C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： C23C16/4405
摘要： A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.
摘要翻译：本文描述了用于从基底去除含碳残留物的方法。一方面，提供了从基材表面的至少一部分去除含碳残余物的方法，其包括：提供包含氧源，氟源和任选添加气体的工艺气体，其中摩尔比在工艺气体中所含的氧与氟的含量范围为约1至约10; 使用至少一个能量源来激活所述工艺气体以提供反应性物质; 并使基材的表面与反应性物质接触，从表面挥发并除去含碳残渣。

7. 发明授权

US06857433B2 Process for cleaning a glass-coating reactor using a reactive gas 失效
标题翻译：使用反应气体清洗玻璃涂层反应器的方法
公开(公告)号：US06857433B2
公开(公告)日：2005-02-22
申请号：US10201354
申请日：2002-07-22
申请人： Philip Bruce Henderson , Mario Joseph Moniz , Andrew David Johnson , Eugene Joseph Karwacki, Jr. , Richard R. Bodette , Christopher Robert Cording , Herbert David Johnson
发明人： Philip Bruce Henderson , Mario Joseph Moniz , Andrew David Johnson , Eugene Joseph Karwacki, Jr. , Richard R. Bodette , Christopher Robert Cording , Herbert David Johnson
IPC分类号： C23C14/00 , C23C16/44 , B08B3/08
CPC分类号： C23C16/4405 , Y10S438/905
摘要： A process for cleaning a glass-coating reactor includes: (a) providing the reactor to be cleaned, wherein the reactor contains a glass substrate within a chamber and the chamber has an internal surface coated with at least one substance selected from the group consisting of Si3N4 or SiO2; (b) terminating a flow of a deposition gas to the reactor; (c) adding to the reactor at least one cleaning gas to react with the at least one substance to form at least one volatile product; and (d) removing from the reactor the at least one volatile product.
摘要翻译：用于清洁玻璃包衣反应器的方法包括：（a）提供要清洁的反应器，其中反应器在室内包含玻璃基板，并且室具有涂覆有至少一种选自以下的物质的内表面： Si3N4或SiO2; （b）终止沉积气体流向反应器; （c）向所述反应器中加入至少一种清洁气体以与所述至少一种物质反应以形成至少一种挥发性产物; 和（d）从反应器中除去至少一种挥发性产物。

8. 发明授权

US08278222B2 Selective etching and formation of xenon difluoride 有权
标题翻译：选择性蚀刻和形成氙二氟化物
公开(公告)号：US08278222B2
公开(公告)日：2012-10-02
申请号：US12360588
申请日：2009-01-27
申请人： Dingjun Wu , Eugene Joseph Karwacki, Jr. , Anupama Mallikarjunan , Andrew David Johnson
发明人： Dingjun Wu , Eugene Joseph Karwacki, Jr. , Anupama Mallikarjunan , Andrew David Johnson
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B08B7/0035 , C23C16/4405 , C23F4/00 , H01L21/32135 , H01L21/32136 , H01L21/67028
摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.
摘要翻译：本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体发电机及其混合物。

9. 发明申请

US20100055921A1 Selective Etching of Silicon Dioxide Compositions 有权
标题翻译：二氧化硅组合物的选择性蚀刻
公开(公告)号：US20100055921A1
公开(公告)日：2010-03-04
申请号：US12504064
申请日：2009-07-16
申请人： Glenn Michael Mitchell , Stephen Andrew Motika , Andrew David Johnson
发明人： Glenn Michael Mitchell , Stephen Andrew Motika , Andrew David Johnson
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116
摘要： A process for selectively etching a material comprising SiO2 over silicon, the method comprising the steps of: placing a silicon substrate comprising a layer of a material comprising SiO2 within a reactor chamber equipped with an energy source; creating a vacuum within the chamber; introducing into the reactor chamber a reactive gas mixture comprising a fluorine compound, a polymerizable fluorocarbon, and an inert gas, wherein the reactive gas mixture is substantially free of added oxygen; activating the energy source to form a plasma activated reactive etching gas mixture within the chamber; and selectively etching the material comprising SiO2 preferentially to the silicon substrate.
摘要翻译：一种用于选择性地蚀刻包含硅上的SiO 2的材料的方法，所述方法包括以下步骤：将包含SiO 2的材料层的硅衬底放置在装备有能量源的反应器室内; 在室内产生真空; 向反应器室中引入包含氟化合物，可聚合碳氟化合物和惰性气体的反应性气体混合物，其中反应性气体混合物基本上不含加氧; 激活能量源以在室内形成等离子体激活的反应性蚀刻气体混合物; 并且选择性地将包含SiO 2的材料优选地蚀刻到硅衬底。

10. 发明申请

US20090095346A1 ANTIREFLECTIVE COATINGS FOR PHOTOVOLTAIC APPLICATIONS 有权
标题翻译：用于光伏应用的抗反射涂层
公开(公告)号：US20090095346A1
公开(公告)日：2009-04-16
申请号：US12244455
申请日：2008-10-02
申请人： Patrick Timothy Hurley , Robert Gordon Ridgeway , Raymond Nicholas Vrtis , Mark Leonard O'Neill , Andrew David Johnson
发明人： Patrick Timothy Hurley , Robert Gordon Ridgeway , Raymond Nicholas Vrtis , Mark Leonard O'Neill , Andrew David Johnson
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： C23C16/30 , H01L21/3148 , H01L31/02168 , H01L31/0236 , H01L31/02363 , H01L31/18 , Y02E10/50 , Y02E10/547
摘要： A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SivCxNuHyFz, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.
摘要翻译：提供了一种用于制造包括包括pn结的硅衬底的光伏器件的方法，该方法包括以下步骤：通过化学气相沉积在含硅化合物的组合物的化学气相沉积中在硅衬底的至少一个表面上形成非晶碳化硅抗反射涂层选自有机硅烷，氨基硅烷及其混合物的前体，其中非晶碳化硅抗反射涂层是由式SivCxNuHyFz表示的膜，其中v + x + u + y + z = 100％，v来自 1〜35原子％，x为5〜80原子％，u为0〜50原子％，y为10〜50原子％，z为0〜15原子％。

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