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2. 发明申请

US20070044832A1 PHOTOVOLTAIC TEMPLATE 审中-公开
标题翻译：光伏模板
公开(公告)号：US20070044832A1
公开(公告)日：2007-03-01
申请号：US11467009
申请日：2006-08-24
申请人： Leslie Fritzemeier
发明人： Leslie Fritzemeier
IPC分类号： H01L31/00
CPC分类号： H01L31/0392 , H01L31/0304 , H01L31/03926 , H01L31/0693 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A template for growth of an anticipated semiconductor film has a deformation textured substrate. The template also has an intermediate epitaxial film coupled to the deformation textured substrate, the intermediate epitaxial film being chemically compatible and substantially lattice matched with the anticipated semiconductor film. A method of manufacturing a template for the growth of an anticipated semiconductor is also disclosed. A substrate is deformed to produce a textured surface. An intermediate epitaxial film, chemically compatible and substantially lattice matched with the anticipated semiconductor film, is deposited. A further disclosed photovoltaic device has a semiconductor layer, a deformation textured substrate, and an intermediate epitaxial film coupled to the deformation textured substrate. The intermediate epitaxial film is chemically compatible and substantially lattice matched with the semiconductor layer. The semiconductor layer is epitaxially grown on the intermediate epitaxial film.
摘要翻译：用于生长预期半导体膜的模板具有变形纹理化衬底。模板还具有耦合到变形织构化衬底的中间外延膜，中间外延膜化学兼容并且与预期的半导体膜基本上晶格匹配。还公开了制造用于生长预期半导体的模板的方法。基板变形以产生纹理表面。沉积与期望的半导体膜化学相容并且基本上晶格匹配的中间外延膜。进一步公开的光伏器件具有半导体层，变形织构化衬底和耦合到变形织构化衬底的中间外延膜。中间外延膜与化学兼容并且与半导体层基本上晶格匹配。在中间外延膜上外延生长半导体层。

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