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    • 1. 发明申请
    • APPARATUS AND METHOD FOR PROVIDING A REPROGRAMMABLE ELECTRICALLY PROGRAMMABLE FUSE
    • 提供可编程可编程保险丝的装置和方法
    • US20070081406A1
    • 2007-04-12
    • US11246586
    • 2005-10-07
    • David BoerstlerEskinder HailuSubramanian IyerJieming Qi
    • David BoerstlerEskinder HailuSubramanian IyerJieming Qi
    • G11C17/18
    • G11C17/18G11C17/16
    • An apparatus and method for providing a reprogrammable electrically programmable fuse (eFuse) are provided. With the apparatus and method, a pair of eFuses are provided coupled to programming current sources and sensing current sources. When the pair of eFuses is to be programmed, a first programming current is applied to a first eFuse to thereby increase the resistance of the first eFuse by an incremental amount. When the pair of eFuses is to be returned to an unprogrammed state, a second programming current source is applied to a second eFuse to thereby increase a resistance of the second eFuse to be greater than the resistance of the first eFuse. When the sensing current is applied to the eFuses, a difference in the resulting voltages across the eFuses is identified and used to indicate whether the reprogrammable eFuse is in a programmed state or unprogrammed state.
    • 提供了一种用于提供可再编程电可编程熔丝(eFuse)的设备和方法。 利用该装置和方法,提供一对耦合到编程电流源并感测电流源的eFuses。 当要对一对eFuse进行编程时,将第一编程电流施加到第一eFuse,从而增加第一eFuse的电阻增量。 当一对eFuse将返回到未编程状态时,第二编程电流源被施加到第二eFuse,从而将第二eFuse的电阻增加到大于第一eFuse的电阻。 当感应电流被施加到eFuse时,识别出eFuses上产生的电压的差异,并用于指示可重新编程的eFuse是否处于编程状态或未编程状态。
    • 2. 发明申请
    • APPARATUS AND METHOD FOR EXTRACTING A MAXIMUM PULSE WIDTH OF A PULSE WIDTH LIMITER
    • 提取脉冲宽度极限的最大脉冲宽度的装置和方法
    • US20070236266A1
    • 2007-10-11
    • US11278842
    • 2006-04-06
    • David BoerstlerEskinder HailuJieming Qi
    • David BoerstlerEskinder HailuJieming Qi
    • H03K3/017
    • H03K5/1534H03K5/156H03K2005/00293
    • An apparatus and method for extracting a maximum pulse width of a pulse width limiter are provided. The apparatus and method of the illustrative embodiments performs such extraction using a circuit that is configured to eliminate the majority of the delay cells utilized in the circuit arrangement described in commonly assigned and co-pending U.S. patent application Ser. No. 11/109,090 (hereafter referred to as the '090 application). The elimination of these delay cells is made possible in one illustrative embodiment by replacing an OR gate in the circuit configuration of the '090 application with an edge triggered re-settable latch. The replacement of the OR gate with the edge triggered re-settable latch reduces the amount of chip area used in addition to the power consumption of the circuit.
    • 提供了一种用于提取脉冲宽度限制器的最大脉冲宽度的装置和方法。 说明性实施例的装置和方法使用被配置为消除在共同转让和共同未决的美国专利申请Ser中描述的电路装置中使用的大多数延迟单元的电路来执行这种提取。 第11 / 109,090号(以下简称“090”)。 在一个说明性实施例中,通过用'边缘触发的可重新设定的锁存器'替换'090应用的电路配置中的或门,可以消除这些延迟单元。 利用边沿触发的可重新设置的锁存器替换或门可以减少除了电路功耗之外使用的芯片面积。
    • 4. 发明申请
    • Apparatus and method for automatically self-calibrating a duty cycle circuit for maximum chip performance
    • 用于自动自校准占空比电路以实现最大芯片性能的装置和方法
    • US20070079197A1
    • 2007-04-05
    • US11242677
    • 2005-10-04
    • David BoerstlerEskinder HailuJieming Qi
    • David BoerstlerEskinder HailuJieming Qi
    • G01R31/28
    • H03K5/1565G01R31/31727G01R31/3187
    • An apparatus and method for automatically calibrating a duty cycle circuit for maximum performance are provided. A chip level built-in circuit that automatically calibrates the duty cycle correction (DCC) circuit setting for each chip is provided. This chip level built-in circuit includes a clock generation macro unit, a simple duty cycle correction (DCC) circuit, an array slice and built-in self test unit, and a DCC circuit controller. Results of a built-in self test, i.e. pass or fail, of an array are provided to the DCC circuit controller. If the result of the built-in self test is a pass, then the current DCC circuit controller's DCC control bit setting is set as the setting for the chip. If the result from the built-in self test is a fail, the DCC circuit controller's DCC control bits setting is incremented to a next setting and the self-test is performed again.
    • 提供一种用于自动校准占空比电路以实现最大性能的装置和方法。 提供了自动校准每个芯片的占空比校正(DCC)电路设置的芯片级内置电路。 该芯片级内置电路包括时钟生成宏单元,简单占空比校正(DCC)电路,阵列片和内置自检单元以及DCC电路控制器。 向DCC电路控制器提供阵列的内置自检,即通过或失败的结果。 如果内置自检的结果是通过,则将当前DCC电路控制器的DCC控制位设置设置为芯片的设置。 如果内置自检的结果为失败,DCC电路控制器的DCC控制位设置将增加到下一个设置,并再次执行自检。
    • 5. 发明申请
    • System and method for on/off-chip characterization of pulse-width limiter outputs
    • 用于脉宽限幅器输出的片外特性的系统和方法
    • US20060232310A1
    • 2006-10-19
    • US11109090
    • 2005-04-19
    • David BoerstlerEskinder HailuJieming Qi
    • David BoerstlerEskinder HailuJieming Qi
    • H03K3/017
    • H03K5/156G01R31/31708G01R31/31725H03K5/05H03K5/26
    • The present invention provides for a method for characterization of pulse-width limiter outputs. A known clock signal is received. A pulse width of the received known clock signal is limited through a first pulse-width limiter to generate a first intermediate signal. The first intermediate signal is delayed by a known amount to generate a first delayed signal. The first intermediate signal is inverted to generate a first inverted signal. A pulse width of the first inverted signal is limited through a second pulse-width limiter to generate a second intermediate signal. The second intermediate signal is delayed by a known amount to generate a second delayed signal. A logic OR operation is performed on the first delayed signal and the second delayed signal to generate a clock out signal.
    • 本发明提供了用于表征脉冲宽度限制器输出的方法。 接收已知的时钟信号。 所接收的已知时钟信号的脉冲宽度通过第一脉冲宽度限制器来限制,以产生第一中间信号。 第一中间信号被延迟已知的量以产生第一延迟信号。 第一中间信号被反相以产生第一反相信号。 通过第二脉冲宽度限幅器限制第一反相信号的脉冲宽度以产生第二中间信号。 第二中间信号被延迟已知的量以产生第二延迟信号。 对第一延迟信号和第二延迟信号执行逻辑或运算以产生时钟输出信号。
    • 6. 发明申请
    • Duty Cycle Measurement Apparatus and Method
    • 占空比测量装置及方法
    • US20070260409A1
    • 2007-11-08
    • US11777370
    • 2007-07-13
    • David BoerstlerEskinder HailuJieming Qi
    • David BoerstlerEskinder HailuJieming Qi
    • G06F19/00
    • G01R29/02G01R31/2884
    • A mechanism for measuring duty cycle of a signal under test in an integrated circuit device, such as a microprocessor or system-on-a-chip is provided. The mechanism generates a frequency which is proportional to the duty cycle and which can be measured using common lab or manufacturing equipment. The mechanism may be implemented using simple circuits in a standard complementary metal oxide semiconductor process which requires very little area and can be powered off when it is not being used. The mechanism may include, for example, a low pass filter, a voltage divider for providing calibration reference voltage signals, a voltage to frequency converter, a frequency divider for dividing a frequency signal output so that the frequency of the signal is within a predetermined range, and an output driver and output pad. From the frequency output signal, a duty cycle of the signal under test may be calculated using off-chip equipment.
    • 提供了一种用于测量诸如微处理器或片上系统的集成电路器件中被测信号占空比的机构。 该机制产生与占空比成比例的频率,可以使用普通实验室或制造设备测量。 该机构可以使用标准互补金属氧化物半导体工艺中的简单电路来实现,其需要非常小的面积并且可以在不使用时关闭电源。 该机构可以包括例如低通滤波器,用于提供校准参考电压信号的分压器,电压到频率转换器,用于分频频率信号输出的分频器,使得信号的频率在预定范围内 ,以及输出驱动器和输出板。 从频率输出信号,可以使用片外设备来计算被测信号的占空比。
    • 7. 发明申请
    • METHOD AND APPARATUS FOR ON-CHIP DUTY CYCLE MEASUREMENT
    • 用于芯片周期测量的方法和装置
    • US20070255517A1
    • 2007-11-01
    • US11380982
    • 2006-05-01
    • David BoerstlerEskinder HailuJieming Qi
    • David BoerstlerEskinder HailuJieming Qi
    • G06F19/00
    • G01R31/31727G01R31/3004G01R31/31726
    • The disclosed methodology and apparatus measures the duty cycle of a reference clock signal that a clock circuit supplies to a duty cycle measurement (DCM) circuit located “on-chip”, namely on an integrated circuit (IC) in which the DCM circuit is incorporated. In one embodiment, the DCM circuit includes a capacitor driven by a charge pump. The reference clock signal drives the charge pump. The clock circuit varies the duty cycle of the reference clock signal among a number of known duty cycle values. The DCM circuit stores resultant capacitor voltage values corresponding to each of the known duty cycle values in a data store. The DCM circuit applies a test clock signal having an unknown duty cycle to the capacitor via the charge pump, thus charging the capacitor to a new voltage value that corresponds to the duty cycle of the test clock signal. Control software accesses the data store to determine the duty cycle to which the test clock signal corresponds.
    • 所公开的方法和装置测量时钟电路提供给位于“片上”的占空比测量(DCM)电路的参考时钟信号的占空比,即集成电路(IC),其中并入DCM电路 。 在一个实施例中,DCM电路包括由电荷泵驱动的电容器。 参考时钟信号驱动电荷泵。 时钟电路在多个已知的占空比值之间改变参考时钟信号的占空比。 DCM电路将对应于每个已知占空比值的合成电容电压值存储在数据存储器中。 DCM电路通过电荷泵向电容器施加具有未知占空比的测试时钟信号,从而将电容器充电到对应于测试时钟信号占空比的新电压值。 控制软件访问数据存储,以确定测试时钟信号对应的占空比。
    • 10. 发明申请
    • Thermal sensing method and apparatus using existing ESD devices
    • 使用现有ESD器件的热感测方法和设备
    • US20070075370A1
    • 2007-04-05
    • US11242675
    • 2005-10-04
    • David BoerstlerEskinder HailuKazuhiko MikiJieming Qi
    • David BoerstlerEskinder HailuKazuhiko MikiJieming Qi
    • H01L23/62
    • G01K7/01G01K2217/00
    • The present invention provides a method, an apparatus, and a computer program product for measuring the temperature of a microprocessor through the use of ESD circuitry. The present invention uses diodes and an I/O pad within ESD circuits to determine the temperature at the location of the ESD circuitry. First, a current measuring device connects to a diode. A user or a computer program disables the protected component or circuitry, and subsequently applies a predetermined voltage to the I/O pad. This creates a reverse saturation current through the diode, which is measured by the current measuring device. From this current the user or a computer program determines the temperature of the microprocessor at the diode through the use of a graphical representation of diode reverse saturation current and corresponding temperature.
    • 本发明提供了一种通过使用ESD电路来测量微处理器的温度的方法,装置和计算机程序产品。 本发明在ESD电路中使用二极管和I / O焊盘来确定ESD电路位置处的温度。 首先,电流测量装置连接到二极管。 用户或计算机程序禁用受保护的组件或电路,然后将预定电压施加到I / O焊盘。 这通过二极管产生反向饱和电流,由电流测量装置测量。 从该电流,用户或计算机程序通过使用二极管反向饱和电流和相应温度的图形表示来确定微处理器在二极管处的温度。