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1. 发明申请

US20090078675A1 METHOD OF REMOVING PHOTORESIST 审中-公开
标题翻译：去除光电离子的方法
公开(公告)号：US20090078675A1
公开(公告)日：2009-03-26
申请号：US11861284
申请日：2007-09-26
申请人： Darrell LaRue McReynolds , Lakshmi C.S. , Yao Fu , Kia Silverbrook
发明人： Darrell LaRue McReynolds , Lakshmi C.S. , Yao Fu , Kia Silverbrook
IPC分类号： G11B5/127
CPC分类号： G03F7/427 , B41J2/1601 , B41J2/1628 , B41J2/1631 , B41J2/1639 , B41J2/1642 , B41J2002/14475 , B41J2202/11 , B81B2201/052 , B81C1/00476 , B81C2201/0108 , H01L21/31138
摘要： A method of photoresist removal is provided. The method employs a plasma formed from a gas chemistry comprising NH3. The method is particularly suitable for use in MEMS fabrication processes, such as inkjet printhead fabrication.
摘要翻译：提供了光刻胶去除方法。该方法采用由包含NH 3的气体化学物质形成的等离子体。该方法特别适用于MEMS制造工艺，例如喷墨打印头制造。

2. 发明申请

US20090078674A1 Reactive Ion Etching Process for Etching Metals 审中-公开
标题翻译：腐蚀金属的反应离子蚀刻工艺
公开(公告)号：US20090078674A1
公开(公告)日：2009-03-26
申请号：US11861282
申请日：2007-09-26
申请人： Darrell LaRue McReynolds , Lakshmi C.S. , Kia Silverbrook
发明人： Darrell LaRue McReynolds , Lakshmi C.S. , Kia Silverbrook
IPC分类号： C03C25/68 , C23F1/00 , G01D15/00
CPC分类号： C23F4/00 , B41J2/1404 , B41J2/1412 , B41J2/1601 , B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1639 , B41J2/1642 , B41J2/1645 , B41J2002/1437 , B41J2002/14403 , B41J2002/14475 , B41J2202/11 , B81C1/00531 , B81C2201/0132 , C22C19/05 , C22C19/07 , C22C38/18
摘要： A method of etching a metal by a reactive ion etching process is provided. The etchant gas chemistry for the reactive ion etching process consists essentially of NH3. The process is particularly suitable for etching superalloys, which etch only slowly using conventional metal etching techniques.
摘要翻译：提供了通过反应离子蚀刻工艺蚀刻金属的方法。用于反应离子蚀刻工艺的蚀刻剂气体化学主要由NH 3组成。该方法特别适用于蚀刻超级合金，其仅使用常规金属蚀刻技术缓慢地蚀刻。

3. 发明授权

US07837887B2 Method of forming an ink supply channel 有权
标题翻译：形成供墨通道的方法
公开(公告)号：US07837887B2
公开(公告)日：2010-11-23
申请号：US12542659
申请日：2009-08-17
申请人： Darrell LaRue McReynolds , Kia Silverbrook
发明人： Darrell LaRue McReynolds , Kia Silverbrook
IPC分类号： G11B5/127
CPC分类号： H01L21/02057 , B41J2/1412 , B41J2/1601 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/164 , B81B2201/052 , B81B2203/033 , B81C1/00849 , B81C2201/0112 , B81C2201/0132
摘要： A method of forming an ink supply channel for an inkjet printhead comprises the steps of: (i) providing a wafer having a frontside and a backside; (ii) etching a plurality of frontside trenches into the frontside; (iii) filling each of the trenches with a photoresist plug; (iv) forming nozzle structures on the frontside using MEMS fabrication processes; (v) etching a backside trench from the backside, the backside trench meeting with one or more of the plugs; (vi) removing a portion of each photoresist plug via the backside trench by subjecting the backside to a biased oxygen plasma etch, thereby exposing sidewall features in the backside trench; (vii) modifying the exposed sidewall features; and (viii) removing the photoresist plugs to form the ink supply channel. The ink supply channel connects the backside to the frontside.
摘要翻译：一种形成用于喷墨打印头的供墨通道的方法包括以下步骤：（i）提供具有前侧和后侧的晶片; （ii）将多个前侧沟槽蚀刻到前侧; （iii）用光致抗蚀剂插塞填充每个沟槽; （iv）使用MEMS制造工艺在前侧形成喷嘴结构; （v）从背面蚀刻背面沟槽，所述背面沟槽与一个或多个所述插头相会合; （vi）通过使背面经受偏压的氧等离子体蚀刻，从而暴露背面沟槽中的侧壁特征，通过背侧沟槽去除每个光致抗蚀剂插塞的一部分; （vii）修改暴露的侧壁特征; 和（viii）去除光致抗蚀剂插头以形成供墨通道。供墨通道将背面连接到前侧。

4. 发明申请

US20110024389A1 METHOD OF ETCHING BACKSIDE INK SUPPLY CHANNELS FOR AN INKJET PRINTHEAD 审中-公开
标题翻译：用于喷墨打印机的背面墨水通道的方法
公开(公告)号：US20110024389A1
公开(公告)日：2011-02-03
申请号：US12905078
申请日：2010-10-15
申请人： Darrell LaRue McReynolds , Kia Silverbrook
发明人： Darrell LaRue McReynolds , Kia Silverbrook
IPC分类号： C23F1/00
CPC分类号： H01L21/02057 , B41J2/1412 , B41J2/1601 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/164 , B81B2201/052 , B81B2203/033 , B81C1/00849 , B81C2201/0112 , B81C2201/0132
摘要： A method of etching backside ink supply channels for an inkjet printhead. The method includes the steps of: (a) attaching a frontside of the printhead to a handle wafer; (b) etching the backside of the printhead using an anisotropic DRIE process to form a plurality of ink supply channels, the DRIE process including alternating etching and passivation steps, the passivation steps depositing a polymeric coating on sidewalls of the ink supply channels; and (c) removing the polymeric coating by etching the backside of the printhead in a biased plasma etching chamber using an O2 plasma. The chamber temperature is in the range of 90 to 180° C.
摘要翻译：一种蚀刻用于喷墨打印头的背面供墨通道的方法。该方法包括以下步骤：（a）将打印头的前侧连接到手柄晶片; （b）使用各向异性DRIE工艺蚀刻打印头的背面以形成多个供墨通道，所述DRIE工艺包括交替的蚀刻和钝化步骤，所述钝化步骤在所述供墨通道的侧壁上沉积聚合物涂层; 和（c）通过使用O 2等离子体在偏压等离子体蚀刻室中蚀刻打印头的背面去除聚合物涂层。室温度在90至180℃的范围内

5. 发明申请

US20090301999A1 Method Of Forming An Ink Supply Channel 有权
标题翻译：形成供墨通道的方法
公开(公告)号：US20090301999A1
公开(公告)日：2009-12-10
申请号：US12542659
申请日：2009-08-17
申请人： Darrell LaRue McReynolds , Kia Silverbrook
发明人： Darrell LaRue McReynolds , Kia Silverbrook
IPC分类号： G11B5/127
CPC分类号： H01L21/02057 , B41J2/1412 , B41J2/1601 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/164 , B81B2201/052 , B81B2203/033 , B81C1/00849 , B81C2201/0112 , B81C2201/0132
摘要： A method of forming an ink supply channel for an inkjet printhead comprises the steps of: (i) providing a wafer having a frontside and a backside; (ii) etching a plurality of frontside trenches into the frontside; (iii) filling each of the trenches with a photoresist plug; (iv) forming nozzle structures on the frontside using MEMS fabrication processes; (v) etching a backside trench from the backside, the backside trench meeting with one or more of the plugs; (vi) removing a portion of each photoresist plug via the backside trench by subjecting the backside to a biased oxygen plasma etch, thereby exposing sidewall features in the backside trench; (vii) modifying the exposed sidewall features; and (viii) removing the photoresist plugs to form the ink supply channel. The ink supply channel connects the backside to the frontside.
摘要翻译：一种形成用于喷墨打印头的供墨通道的方法包括以下步骤：（i）提供具有前侧和后侧的晶片; （ii）将多个前侧沟槽蚀刻到前侧; （iii）用光致抗蚀剂插塞填充每个沟槽; （iv）使用MEMS制造工艺在前侧形成喷嘴结构; （v）从背面蚀刻背面沟槽，所述背面沟槽与一个或多个所述插头相会合; （vi）通过使背面经受偏压的氧等离子体蚀刻，从而暴露背面沟槽中的侧壁特征，通过背侧沟槽去除每个光致抗蚀剂插塞的一部分; （vii）修改暴露的侧壁特征; 和（viii）去除光致抗蚀剂插头以形成供墨通道。供墨通道将背面连接到前侧。

6. 发明授权

US07588693B2 Method of modifying an etched trench 有权
标题翻译：修改蚀刻沟槽的方法
公开(公告)号：US07588693B2
公开(公告)日：2009-09-15
申请号：US11242916
申请日：2005-10-05
申请人： Darrell LaRue McReynolds , Kia Silverbrook
发明人： Darrell LaRue McReynolds , Kia Silverbrook
IPC分类号： C23F1/00 , G01D15/00
CPC分类号： H01L21/02057 , B41J2/1412 , B41J2/1601 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/164 , B81B2201/052 , B81B2203/033 , B81C1/00849 , B81C2201/0112 , B81C2201/0132
摘要： A process for facilitating modification of an etched trench is provided. The process comprises: (a) providing a wafer comprising an etched trench, the trench having a photoresist plug at its base; and (b) removing a portion of the photoresist by subjecting the wafer to a biased oxygen plasma etch. The process is particularly suitable for preparing a trench for subsequent argon ion milling. Printhead integrated circuits fabricated by a process according to the invention have improved ink channel surface profiles and/or surface properties.
摘要翻译：提供了一种便于修改蚀刻沟槽的工艺。该方法包括：（a）提供包括蚀刻沟槽的晶片，所述沟槽在其底部具有光致抗蚀剂插塞; 和（b）通过对晶片进行偏压氧等离子体蚀刻来去除一部分光致抗蚀剂。该方法特别适用于制备后续氩离子研磨的沟槽。通过根据本发明的方法制造的印刷头集成电路具有改进的油墨通道表面轮廓和/或表面性质。

7. 发明授权

US07481943B2 Method suitable for etching hydrophillic trenches in a substrate 有权
标题翻译：适用于蚀刻衬底中的亲水沟槽的方法
公开(公告)号：US07481943B2
公开(公告)日：2009-01-27
申请号：US11198235
申请日：2005-08-08
申请人： Gregory John McAvoy , Darrell LaRue McReynolds , Kia Silverbrook
发明人： Gregory John McAvoy , Darrell LaRue McReynolds , Kia Silverbrook
IPC分类号： B44C1/22
CPC分类号： B41J2/1601 , B41J2/14145 , B41J2/1628 , B41J2/1631 , B41J2/1646
摘要： A method suitable for etching hydrophilic trenches into a substrate, such as silicon, is provided. The method comprises etching and sidewall passivation processes for achieving anisotropy. Sidewalls of the etched trench are made hydrophilic during the etch by virtue of a hydrophilizing dopant in a passivating gas plasma. The method is useful for etching ink supply channels in inkjet printheads.
摘要翻译：提供了一种适合于将亲水沟槽蚀刻成诸如硅的衬底的方法。该方法包括用于实现各向异性的蚀刻和侧壁钝化工艺。通过钝化气体等离子体中的亲水化掺杂剂，蚀刻沟槽的侧壁在蚀刻期间被制成亲水性。该方法对于蚀刻喷墨打印头中的墨水供应通道是有用的。

8. 发明申请

US20090095709A1 METHOD OF ETCHING INK SUPPLY CHANNEL WITH HYDROPHILIC SIDEWALLS 审中-公开
标题翻译：用HYPOPLILIC SIDEWALLS蚀刻墨水通道的方法
公开(公告)号：US20090095709A1
公开(公告)日：2009-04-16
申请号：US12277150
申请日：2008-11-24
申请人： Gregory John McAvoy , Darrell LaRue McReynolds , Kia Silverbrook
发明人： Gregory John McAvoy , Darrell LaRue McReynolds , Kia Silverbrook
IPC分类号： B41J2/135 , B44C1/22
CPC分类号： B41J2/1601 , B41J2/14145 , B41J2/1628 , B41J2/1631 , B41J2/1646
摘要： A method of etching an ink supply channel for an inkjet printhead. The method comprises simultaneous etching and passivation processes. A single etching and passivating gas plasma comprises: (a) a passivating gas comprising oxygen; (b) an inert sputtering gas; (c) a fluorinated etching gas; and (d) a hydrophilizing dopant. The resultant ink supply channel has relatively hydrophilic sidewalls.
摘要翻译：一种蚀刻用于喷墨打印头的供墨通道的方法。该方法包括同时蚀刻和钝化工艺。单个蚀刻和钝化气体等离子体包括：（a）包含氧的钝化气体; （b）惰性溅射气体; （c）氟化蚀刻气体; 和（d）亲水化掺杂剂。所得的供墨通道具有相对亲水的侧壁。

9. 发明申请

US20060250454A1 MEMS device with nanocrystalline heater 有权
标题翻译：具有纳米晶体加热器的MEMS器件
公开(公告)号：US20060250454A1
公开(公告)日：2006-11-09
申请号：US11482977
申请日：2006-07-10
申请人： Kia Silverbrook , Roger Foote , Angus North , Jennifer Fishburn , Paul Lunsmann , Alexandra Papadakis , Lakshmi C.S. , Frederik Crous , Matthew Walker
发明人： Kia Silverbrook , Roger Foote , Angus North , Jennifer Fishburn , Paul Lunsmann , Alexandra Papadakis , Lakshmi C.S. , Frederik Crous , Matthew Walker
IPC分类号： B41J2/05
CPC分类号： B41J2/0458 , B41J2/1412 , B41J2/1601 , B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1639 , B41J2/1642 , B41J2/1645 , B41J2/1646 , B41J2002/1437 , B41J2002/14403 , B41J2002/14475
摘要： A MEMS vapor bubble generator with a chamber for holding liquid and a heater positioned in the chamber for heating the liquid above its bubble nucleation point to form a vapour bubble; wherein, the heater has a microstructure with a grain size less than 100 nanometres.
摘要翻译：具有用于保持液体的腔室和位于腔室中的加热器的MEMS蒸气发生器，用于将液体加热到其气泡成核点以上以形成蒸气泡; 其中，加热器具有粒径小于100纳米的微结构。

10. 发明申请

US20060250453A1 MEMS bubble generator 有权
标题翻译： MEMS气泡发生器
公开(公告)号：US20060250453A1
公开(公告)日：2006-11-09
申请号：US11482953
申请日：2006-07-10
申请人： Kia Silverbrook , Roger Foote , Angus North , Jennifer Fishburn , Paul Lunsmann , Alexandra Papadakis , Lakshmi C.S. , Frederik Crous , Matthew Walker
发明人： Kia Silverbrook , Roger Foote , Angus North , Jennifer Fishburn , Paul Lunsmann , Alexandra Papadakis , Lakshmi C.S. , Frederik Crous , Matthew Walker
IPC分类号： B41J2/05
CPC分类号： B41J2/1601 , B41J2/1412 , B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1639 , B41J2/1645 , B41J2/1646 , B41J2002/1437 , B41J2002/14403 , B41J2002/14475 , B41J2202/03
摘要： A MEMS vapor bubble generator with a chamber for holding liquid and a heater positioned in the chamber for heating the liquid above its bubble nucleation point to form a vapour bubble; wherein, the heater is formed from a superalloy.
摘要翻译：具有用于保持液体的腔室和位于腔室中的加热器的MEMS蒸气发生器，用于将液体加热到其气泡成核点以上以形成蒸气泡; 其中，所述加热器由超级合金形成。

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