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1. 发明授权

US07626251B2 Microelectronic die assembly having thermally conductive element at a backside thereof and method of making same 有权
标题翻译：在其背面具有导热元件的微电子模具组件及其制造方法
公开(公告)号：US07626251B2
公开(公告)日：2009-12-01
申请号：US11529851
申请日：2006-09-29
申请人： Daoqiang Lu , Chuan Hu , Dongming He
发明人： Daoqiang Lu , Chuan Hu , Dongming He
IPC分类号： H01L23/10
CPC分类号： H01L23/433 , H01L21/563 , H01L23/3735 , H01L2924/0002 , H01L2924/16152 , H01L2924/00
摘要： A microelectronic die assembly. The die assembly includes a microelectronic die, and a thermally conductive element attached to the backside of the die with a thermal interface material. The thermally conductive element has lateral dimensions smaller than, substantially equal to, or larger than lateral dimensions of the die by up to a maximum amount, wherein the maximum amount is adapted to allow a mounting of the die assembly to a package substrate.
摘要翻译：微电子模组件。模具组件包括微电子管芯和导热元件，其通过热界面材料附接到管芯的背面。导热元件的横向尺寸小于，基本上等于或大于模具的横向尺寸直到最大量，其中最大量适于允许将模具组件安装到封装衬底。

2. 发明授权

US07009289B2 Fluxless die-to-heat spreader bonding using thermal interface material 失效
标题翻译：使用热界面材料的无焊模具散热器粘合
公开(公告)号：US07009289B2
公开(公告)日：2006-03-07
申请号：US10797755
申请日：2004-03-09
申请人： Chuan Hu , Daoqiang Lu
发明人： Chuan Hu , Daoqiang Lu
IPC分类号： H01L23/10
CPC分类号： H01L23/3735 , H01L24/75 , H01L2224/04026 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/10253 , H01L2924/12044 , H01L2924/0105 , H01L2924/01079 , H01L2924/00
摘要： A thinned semiconductor die is coupled to an integrated heat spreader with thermal interface material to form a semiconductor package. The method for forming the package comprises forming a metallization layer on a backside of a thinned semiconductor die. A thermal interface portion, including a solder layer including a fluxlessly-capable solder such as AuSn, is formed on a topside of the integrated heat spreader. The metallization layer and the solder layer are then forced together under load and heat without flux to bond the semiconductor die to the integrated heat spreader.
摘要翻译：减薄的半导体管芯与具有热界面材料的集成散热器耦合以形成半导体封装。用于形成封装的方法包括在薄化的半导体管芯的背面上形成金属化层。在集成散热器的顶侧上形成有包括无助焊剂如AuSn的焊料层的热界面部分。然后将金属化层和焊料层在负载和热力下一起被压在一起，而没有焊剂将半导体管芯结合到集成散热器。

3. 发明申请

US20080096324A1 ELECTRONIC ASSEMBLIES HAVING A LOW PROCESSING TEMPERATURE 有权
标题翻译：具有低加工温度的电子组件
公开(公告)号：US20080096324A1
公开(公告)日：2008-04-24
申请号：US11957355
申请日：2007-12-14
申请人： Daoqiang LU , Chuan Hu
发明人： Daoqiang LU , Chuan Hu
IPC分类号： H01L21/58
CPC分类号： H01L24/83 , H01L23/3735 , H01L24/32 , H01L2224/04026 , H01L2224/29111 , H01L2224/32507 , H01L2224/83193 , H01L2224/83801 , H01L2224/8381 , H01L2224/83825 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/15747 , H01L2924/01028 , H01L2924/00014
摘要： Embodiments relate to electronic assemblies and methods for forming electronic assemblies. One method includes providing a die and a copper heat spreader that are to be coupled to one another through a thermal interface material. A layer of tin is formed on the copper heat spreader. The heat spreader and the die are clamped together with the tin positioned between the heat spreader and the die. The assembly is heated so that the tin melts and forms at least one intermetallic compound with copper from the heat spreader. The heat spreader is then coupled to the die through the intermetallic compound.
摘要翻译：实施例涉及用于形成电子组件的电子组件和方法。一种方法包括提供待通过热界面材料彼此耦合的管芯和铜散热器。在铜散热器上形成一层锡。散热器和模具与放置在散热器和模具之间的锡夹紧在一起。加热组件使得锡从散热器中熔化并与铜形成至少一种金属间化合物。然后通过金属间化合物将散热器耦合到管芯。

4. 发明申请

US20070075420A1 Microelectronic package having direct contact heat spreader and method of manufacturing same 有权
标题翻译：具有直接接触式散热器的微电子封装及其制造方法
公开(公告)号：US20070075420A1
公开(公告)日：2007-04-05
申请号：US11242176
申请日：2005-09-30
申请人： Daoqiang Lu , Chuan Hu , Gilroy Vandentop , Shriram Ramanathan , Rajashree Baskaran , Valery Dubin
发明人： Daoqiang Lu , Chuan Hu , Gilroy Vandentop , Shriram Ramanathan , Rajashree Baskaran , Valery Dubin
IPC分类号： H01L23/34
CPC分类号： H01L24/83 , H01L21/4871 , H01L23/3735 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/83 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/18161 , H01L2924/19106 , H01L2924/00
摘要： A method of fabricating a microelectronic package having a direct contact heat spreader, a package formed according to the method, a die-heat spreader combination formed according to the method, and a system incorporating the package. The method comprises metallizing a backside of a microelectronic die to form a heat spreader body directly contacting and fixed to the backside of the die thus yielding a die-heat spreader combination. The package includes the die-heat spreader combination and a substrate bonded to the die.
摘要翻译：一种制造具有直接接触散热器的微电子封装的方法，根据该方法形成的封装，根据该方法形成的模具散热器组合以及包含封装的系统。该方法包括金属化微电子管芯的背面以形成直接接触并固定到管芯背面的散热器主体，从而产生模具散热器组合。该封装包括模具散热器组合和与模具结合的衬底。

5. 发明授权

US06833289B2 Fluxless die-to-heat spreader bonding using thermal interface material 失效
标题翻译：使用热界面材料的无焊模具散热器粘合
公开(公告)号：US06833289B2
公开(公告)日：2004-12-21
申请号：US10436677
申请日：2003-05-12
申请人： Chuan Hu , Daoqiang Lu
发明人： Chuan Hu , Daoqiang Lu
IPC分类号： H01L2150
CPC分类号： H01L23/3735 , H01L24/75 , H01L2224/04026 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/10253 , H01L2924/12044 , H01L2924/0105 , H01L2924/01079 , H01L2924/00
摘要： A thinned semiconductor die is coupled to an integrated heat spreader with thermal interface material to form a semiconductor package. The method for forming the package comprises forming a metallization layer on a backside of a thinned semiconductor die. A thermal interface portion, including a solder layer including a fluxlessly-capable solder such as AuSn, is formed on the topside of the integrated heat spreader. The metallization layer and the solder layer are then forced together under load and heat without flux to bond the semiconductor die to the integrated heat spreader.
摘要翻译：减薄的半导体管芯与具有热界面材料的集成散热器耦合以形成半导体封装。用于形成封装的方法包括在薄化的半导体管芯的背面上形成金属化层。在集成散热器的顶侧上形成有包括无助焊剂如AuSn的焊料层的热界面部分。然后将金属化层和焊料层在负载和热力下一起被压在一起，而没有焊剂将半导体管芯结合到集成散热器。

6. 发明申请

US20130344659A1 MICROELECTRONIC PACKAGE HAVING DIRECT CONTACT HEAT SPREADER AND METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：具有直接接触热交换器的微电子封装及其制造方法
公开(公告)号：US20130344659A1
公开(公告)日：2013-12-26
申请号：US13973975
申请日：2013-08-22
申请人： Daoqiang Lu , Chuan Hu , Gilroy J. Vandentop , Shriram Ramanathan , Rajashree Baskaran , Valery M. Dubin
发明人： Daoqiang Lu , Chuan Hu , Gilroy J. Vandentop , Shriram Ramanathan , Rajashree Baskaran , Valery M. Dubin
IPC分类号： H01L23/00
CPC分类号： H01L24/83 , H01L21/4871 , H01L23/3735 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/83 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/18161 , H01L2924/19106 , H01L2924/00
摘要： A method of fabricating a microelectronic package having a direct contact heat spreader, a package formed according to the method, a die-heat spreader combination formed according to the method, and a system incorporating the package. The method comprises metallizing a backside of a microelectronic die to form a heat spreader body directly contacting and fixed to the backside of the die thus yielding a die-heat spreader combination. The package includes the die-heat spreader combination and a substrate bonded to the die.
摘要翻译：一种制造具有直接接触散热器的微电子封装的方法，根据该方法形成的封装，根据该方法形成的模具散热器组合以及包含封装的系统。该方法包括金属化微电子管芯的背面以形成直接接触并固定到管芯背面的散热器主体，从而产生模具散热器组合。该封装包括模具散热器组合和与模具结合的衬底。

7. 发明授权

US07713839B2 Diamond substrate formation for electronic assemblies 有权
标题翻译：用于电子组件的金刚石基底形成
公开(公告)号：US07713839B2
公开(公告)日：2010-05-11
申请号：US10960303
申请日：2004-10-06
申请人： Chuan Hu , Gregory M. Chrysler , Daoqiang Lu
发明人： Chuan Hu , Gregory M. Chrysler , Daoqiang Lu
IPC分类号： H01L21/30
CPC分类号： H01L21/76259 , H01L23/3732 , H01L2924/0002 , Y10S148/012 , H01L2924/00
摘要： Electronic assemblies and methods for forming assemblies including a diamond substrate are described. One embodiment includes providing a diamond support and forming a porous layer of SiO2 on the diamond support. A diamond layer is formed by chemical vapor deposition on the porous layer so that the porous layer is between the diamond support and the diamond layer. A polycrystalline silicon layer is formed on the diamond layer. The polycrystalline silicon layer is polished to form a planarized surface. A semiconductor layer is coupled to the polysilicon layer. After coupling the semiconductor layer to the polysilicon layer, the diamond support is detached from the diamond layer by breaking the porous layer. The semiconductor layer on the diamond layer substrate is then further processed to form a semiconductor device.
摘要翻译：描述了包括金刚石基底的用于形成组件的电子组件和方法。一个实施方案包括提供金刚石载体并在金刚石载体上形成多孔SiO 2层。通过化学气相沉积在多孔层上形成金刚石层，使得多孔层位于金刚石支撑体和金刚石层之间。在金刚石层上形成多晶硅层。抛光多晶硅层以形成平坦化表面。半导体层耦合到多晶硅层。在将半导体层耦合到多晶硅层之后，金刚石支撑体通过破坏多孔层从金刚石层分离。然后将金刚石层基板上的半导体层进一步处理以形成半导体器件。

8. 发明授权

US07476568B2 Wafer-level assembly of heat spreaders for dual IHS packages 有权
标题翻译：用于双IHS封装的散热器的晶圆级组装
公开(公告)号：US07476568B2
公开(公告)日：2009-01-13
申请号：US11479740
申请日：2006-06-30
申请人： Daoqiang Lu , Rajashree Baskaran , Chuan Hu
发明人： Daoqiang Lu , Rajashree Baskaran , Chuan Hu
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L23/3675 , H01L21/4882 , H01L21/6835 , H01L23/42 , H01L24/27 , H01L2221/68309 , H01L2221/68359 , H01L2224/0401 , H01L2224/04026 , H01L2224/16 , H01L2224/16225 , H01L2224/274 , H01L2224/29111 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2924/01029 , H01L2924/01079 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/16152 , H01L2924/351 , H01L2924/00
摘要： An embodiment of the present invention is a technique to fabricate a package. A heat spreader (HS) array on a HS support substrate is formed. The HS array has a plurality of heat spreaders. A diced wafer supported by a wafer support substrate (WSS) is formed. The diced wafer has a plurality of thin dice. The thin dice in the diced wafer are bonded to the heat spreaders in the HS array to form HS-bonded thin dice between the HS support substrate and the WSS.
摘要翻译：本发明的一个实施例是一种制造包装的技术。形成HS支撑基板上的散热器（HS）阵列。 HS阵列具有多个散热器。形成由晶片支撑基板（WSS）支撑的切割晶片。切割晶片具有多个薄骰子。切割晶片中的薄骰子结合到HS阵列中的散热器上，以在HS支撑衬底和WSS之间形成HS结合的薄骰子。

9. 发明授权

US07319048B2 Electronic assemblies having a low processing temperature 有权
标题翻译：处理温度低的电子组件
公开(公告)号：US07319048B2
公开(公告)日：2008-01-15
申请号：US10933995
申请日：2004-09-03
申请人： Daoqiang Lu , Chuan Hu
发明人： Daoqiang Lu , Chuan Hu
IPC分类号： H01L21/44
CPC分类号： H01L24/83 , H01L23/3735 , H01L24/32 , H01L2224/04026 , H01L2224/29111 , H01L2224/32507 , H01L2224/83193 , H01L2224/83801 , H01L2224/8381 , H01L2224/83825 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/15747 , H01L2924/01028 , H01L2924/00014
摘要： Embodiments relate to electronic assemblies and methods for forming electronic assemblies. One method includes providing a die and a copper heat spreader that are to be coupled to one another through a thermal interface material. A layer of tin is formed on the copper heat spreader. The heat spreader and the die are clamped together with the tin positioned between the heat spreader and the die. The assembly is heated so that the tin melts and forms at least one intermetallic compound with copper from the heat spreader. The heat spreader is then coupled to the die through the intermetallic compound.
摘要翻译：实施例涉及用于形成电子组件的电子组件和方法。一种方法包括提供待通过热界面材料彼此耦合的管芯和铜散热器。在铜散热器上形成一层锡。散热器和模具与放置在散热器和模具之间的锡夹紧在一起。加热组件使得锡从散热器中熔化并与铜形成至少一种金属间化合物。然后通过金属间化合物将散热器耦合到管芯。

10. 发明申请

US20060073640A1 Diamond substrate formation for electronic assemblies 有权
标题翻译：用于电子组件的金刚石基底形成
公开(公告)号：US20060073640A1
公开(公告)日：2006-04-06
申请号：US10960303
申请日：2004-10-06
申请人： Chuan Hu , Gregory Chrysler , Daoqiang Lu
发明人： Chuan Hu , Gregory Chrysler , Daoqiang Lu
IPC分类号： H01L21/50
CPC分类号： H01L21/76259 , H01L23/3732 , H01L2924/0002 , Y10S148/012 , H01L2924/00
摘要： Electronic assemblies and methods for forming assemblies including a diamond substrate are described. One embodiment includes providing a diamond support and forming a porous layer of SiO2 on the diamond support. A diamond layer is formed by chemical vapor deposition on the porous layer so that the porous layer is between the diamond support and the diamond layer. A polycrystalline silicon layer is formed on the diamond layer. The polycrystalline silicon layer is polished to form a planarized surface. A semiconductor layer is coupled to the polysilicon layer. After coupling the semiconductor layer to the polysilicon layer, the diamond support is detached from the diamond layer by breaking the porous layer. The semiconductor layer on the diamond layer substrate is then further processed to form a semiconductor device.
摘要翻译：描述了包括金刚石基底的用于形成组件的电子组件和方法。一个实施方案包括提供金刚石载体并在金刚石载体上形成SiO 2的多孔层。通过化学气相沉积在多孔层上形成金刚石层，使得多孔层位于金刚石支撑体和金刚石层之间。在金刚石层上形成多晶硅层。抛光多晶硅层以形成平坦化表面。半导体层耦合到多晶硅层。在将半导体层耦合到多晶硅层之后，金刚石支撑体通过破坏多孔层从金刚石层分离。然后将金刚石层基板上的半导体层进一步处理以形成半导体器件。

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