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1. 发明申请

US20060007045A1 Interdigitated geometry transducer for optimizing the irradiated acoustic beam 有权
标题翻译：用于优化辐射声束的交错几何传感器
公开(公告)号：US20060007045A1
公开(公告)日：2006-01-12
申请号：US11154577
申请日：2005-06-17
申请人： Danilo Fiasca , Giosue Caliano , Alessandro Caronti , Vittorio Foglietti , Elena Cianci , Massimo Pappalardo
发明人： Danilo Fiasca , Giosue Caliano , Alessandro Caronti , Vittorio Foglietti , Elena Cianci , Massimo Pappalardo
IPC分类号： H01Q1/26
CPC分类号： G01S15/8925 , G01S7/52047 , G01S15/8927
摘要： The invention relates to an ultrasonic transducer comprising a plurality of micro-cells, arranged in an array having M rows and N columns, and driving electronic means apt to connect in parallel to each other said micro-cells so as to form at least two sub-groups of said micro-cells, the micro-cells of each sub-group being connected in parallel to each other, at least one column of said array comprising micro-cells belonging to at least two different adjacent sub-groups, so that a radiation emitted in a direction perpendicular to the array columns by said at least one column has a phase that is intermediate between the phases of said at least two different adjacent sub-groups.
摘要翻译：本发明涉及一种超声波换能器，包括多个微电池，其排列成具有M行和N列的阵列，以及驱动电子装置，以便彼此平行地连接所述微电池，从而形成至少两个子 - 所述微细胞的组，每个子组的微细胞彼此并联连接，所述阵列的至少一列包括属于至少两个不同相邻亚组的微细胞，使得a 由所述至少一个列在垂直于阵列的方向上发射的辐射具有位于所述至少两个不同相邻子组的相位之间的相位。

2. 发明授权

US08033997B2 Interdigitated geometry transducer for optimizing the irradiated acoustic beam 有权
标题翻译：用于优化辐射声束的交错几何传感器
公开(公告)号：US08033997B2
公开(公告)日：2011-10-11
申请号：US11154577
申请日：2005-06-17
申请人： Danilo Fiasca , Giosuè Caliano , Alessandro Caronti , Vittorio Foglietti , Elena Cianci , Massimo Pappalardo
发明人： Danilo Fiasca , Giosuè Caliano , Alessandro Caronti , Vittorio Foglietti , Elena Cianci , Massimo Pappalardo
IPC分类号： A61B8/14
CPC分类号： G01S15/8925 , G01S7/52047 , G01S15/8927
摘要： The invention relates to an ultrasonic transducer comprising a plurality of micro-cells, arranged in an array having M rows and N columns, and driving electronic means apt to connect in parallel to each other said micro-cells so as to form at least two sub-groups of said micro-cells, the micro-cells of each sub-group being connected in parallel to each other, at least one column of said array comprising micro-cells belonging to at least two different adjacent sub-groups, so that a radiation emitted in a direction perpendicular to the array columns by said at least one column has a phase that is intermediate between the phases of said at least two different adjacent sub-groups.
摘要翻译：本发明涉及一种超声波换能器，包括多个微电池，其排列成具有M行和N列的阵列，以及驱动电子装置，以便彼此平行地连接所述微电池，从而形成至少两个子 - 所述微细胞的组，每个子组的微细胞彼此并联连接，所述阵列的至少一列包括属于至少两个不同相邻亚组的微细胞，使得a 由所述至少一个列在垂直于阵列的方向上发射的辐射具有位于所述至少两个不同相邻子组的相位之间的相位。

3. 发明申请

US20080212407A1 Surface Micromechanical Process For Manufacturing Micromachined Capacitive Ultra-Acoustic Transducers and Relevant Micromachined Capacitive Ultra-Acoustic Transducer 有权
标题翻译：用于制造微加工电容式超声波传感器的表面微机械工艺和相关微加工电容式超声换能器
公开(公告)号：US20080212407A1
公开(公告)日：2008-09-04
申请号：US11817621
申请日：2006-03-02
申请人： Giosue Caliano , Alessandro Caronti , Vittorio Foglietti , Elena Cianci , Antonio Minotti , Alessandro Nencioni , Massimo Pappalardo
发明人： Giosue Caliano , Alessandro Caronti , Vittorio Foglietti , Elena Cianci , Antonio Minotti , Alessandro Nencioni , Massimo Pappalardo
IPC分类号： B06B1/00 , H04R31/00 , B05D5/12
CPC分类号： B06B1/0292 , Y10T29/49005
摘要： The invention concerns a manufacturing process, and the related micromachined capacitive ultra-acoustic transducer, that uses commercial silicon wafer 8 already covered on at least one or, more preferably, on both faces by an upper layer 9 and by a lower layer 9′ of silicon nitride deposited with low pressure chemical vapour deposition technique, or deposition LPCVD deposition. One of the two layers 9 or 9′ of silicon nitride, of optimal quality, covering the wafer 8 is used as emitting membrane of the transducer. As a consequence, the micro-cell array 6 forming the CMUT transducer is grown onto one of the two layers of silicon nitride, i.e. it is grown at the back of the transducer with a sequence of steps that is reversed with respect to the classical technology.
摘要翻译：本发明涉及一种制造工艺和相关的微加工电容式超声换能器，其使用已经在至少一个或更优选地在两个表面上由上层9和下层9'覆盖的商业硅晶片8 用低压化学气相沉积技术沉积的氮化硅或沉积LPCVD沉积。覆盖晶片8的最佳质量的氮化硅的两层9或9'之一被用作换能器的发射膜。因此，形成CMUT换能器的微单元阵列6生长在两层氮化硅之一上，即它在传感器的背面以相对于经典技术颠倒的一系列步骤生长。

4. 发明授权

US07790490B2 Surface micromechanical process for manufacturing micromachined capacitive ultra-acoustic transducers and relevant micromachined capacitive ultra-acoustic transducer 有权
标题翻译：用于制造微加工电容式超声换能器和相关微加工电容式超声换能器的表面微机械工艺
公开(公告)号：US07790490B2
公开(公告)日：2010-09-07
申请号：US11817621
申请日：2006-03-02
申请人： Giosuè Caliano , Alessandro Caronti , Vittorio Foglietti , Elena Cianci , Antonio Minotti , Alessandro Nencioni , Massimo Pappalardo
发明人： Giosuè Caliano , Alessandro Caronti , Vittorio Foglietti , Elena Cianci , Antonio Minotti , Alessandro Nencioni , Massimo Pappalardo
IPC分类号： H01L21/00
CPC分类号： B06B1/0292 , Y10T29/49005
摘要： The invention concerns a manufacturing process, and the related micromachined capacitive ultra-acoustic transducer, that uses commercial silicon wafer 8 already covered on at least one or, more preferably, on both faces by an upper layer 9 and by a lower layer 9′ of silicon nitride deposited with low pressure chemical vapour deposition technique, or deposition LPCVD deposition. One of the two layers 9 or 9′ of silicon nitride, of optimal quality, covering the wafer 8 is used as emitting membrane of the transducer. As a consequence, the micro-cell array 6 forming the CMUT transducer is grown onto one of the two layers of silicon nitride, i.e. it is grown at the back of the transducer with a sequence of steps that is reversed with respect to the classical technology.
摘要翻译：本发明涉及一种制造工艺和相关的微加工电容式超声换能器，其使用商业硅晶片8，其已经被上层9和下层9'覆盖在至少一个或更优选地在两个表面上的商业硅晶片8上用低压化学气相沉积技术沉积的氮化硅或沉积LPCVD沉积。覆盖晶片8的最佳质量的氮化硅的两层9或9'之一被用作换能器的发射膜。因此，形成CMUT换能器的微单元阵列6生长在两层氮化硅之一上，即它在传感器的背面以相对于经典技术颠倒的一系列步骤生长。

5. 发明授权

US07074634B2 Surface micromachining process for manufacturing electro-acoustic transducers, particularly ultrasonic transducers, obtained transducers and intermediate products 失效
标题翻译：用于制造电声换能器，特别是超声换能器，获得的换能器和中间产品的表面微加工工艺
公开(公告)号：US07074634B2
公开(公告)日：2006-07-11
申请号：US10476254
申请日：2002-05-09
申请人： Vittorio Foglietti , Elena Cianci , Daniele Memmi , Giosué Caliano , Massimo Pappalardo
发明人： Vittorio Foglietti , Elena Cianci , Daniele Memmi , Giosué Caliano , Massimo Pappalardo
IPC分类号： H01L21/00
CPC分类号： H04R19/00
摘要： A surface micromachining process for manufacturing Electro-acoustic transducers, particularly ultrasonic transducers, the transducers comprising a silicon semiconductor substrate (1), on an upper surface of which one or more membranes (18) of resilient materials are supported by a structural layer (11) of insulating material, rigidly connected to the semiconductor substrate (1), the resilient material having a Young's modulus not lower than 50 GPa, the membranes (18) being metallised, the transducers including one or more lower electrodes (23, 25), rigidly connected to the semiconductor substrate. The process is characterised in that the structural layer (11) includes silicon monoxide. The invention further relates to an Electro-acoustic transducer, particularly an ultrasonic transducer, characterised in that the insulating material of the structural layer (11) is silicon monoxide. The invention also relates to an intermediate product for utilisation in the process for realising Electro-acoustic transducers, particularly ultrasonic transducers.
摘要翻译：一种用于制造电声换能器，特别是超声换能器的表面微加工方法，包括硅半导体衬底（1）的换能器在其上表面上，一个或多个弹性材料膜（18）由结构层（11 ）绝缘材料，刚性地连接到所述半导体衬底（1），所述弹性材料具有不低于50GPa的杨氏模量，所述膜（18）被金属化，所述换能器包括一个或多个下电极（23,25），刚性地连接到半导体衬底。该方法的特征在于结构层（11）包括一氧化硅。本发明还涉及一种电声换能器，特别是超音波换能器，其特征在于结构层（11）的绝缘材料是一氧化硅。本发明还涉及用于实现电声换能器，特别是超声换能器的过程中的中间产品。

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