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1. 发明申请

US20090200636A1 SUB-LITHOGRAPHIC DIMENSIONED AIR GAP FORMATION AND RELATED STRUCTURE 有权
标题翻译：亚平面尺寸空气隙形成和相关结构
公开(公告)号：US20090200636A1
公开(公告)日：2009-08-13
申请号：US12029800
申请日：2008-02-12
申请人： Daniel C. Edelstein , Nicholas C. M. Fuller , David V. Horak , Elbert E. Huang , Wai-Kin Li , Anthony D. Lisi , Satyanarayana V. Nitta , Shom Ponoth
发明人： Daniel C. Edelstein , Nicholas C. M. Fuller , David V. Horak , Elbert E. Huang , Wai-Kin Li , Anthony D. Lisi , Satyanarayana V. Nitta , Shom Ponoth
IPC分类号： H01L23/00 , H01L21/4763
CPC分类号： H01L21/7682 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： Sub-lithographic dimensioned air gap formation and related structure are disclosed. In one embodiment, a method includes forming a dielectric layer including interconnects on a substrate; depositing a cap layer on the dielectric layer; depositing a photoresist over the cap layer; patterning the photoresist to include a first trench pattern at most partially overlying the interconnects; forming a spacer within the first trench pattern to form a second trench pattern having a sub-lithographic dimension; transferring the second trench pattern into the cap layer and into the dielectric layer between the interconnects; and depositing another dielectric layer to form an air gap by pinching off the trench in the dielectric layer.
摘要翻译：公开了亚光刻尺寸气隙形成和相关结构。在一个实施例中，一种方法包括在衬底上形成包括互连的介质层; 在电介质层上沉积盖层; 在所述盖层上沉积光致抗蚀剂; 图案化光致抗蚀剂以包括最多部分地覆盖互连的第一沟槽图案; 在所述第一沟槽图案内形成间隔物以形成具有亚光刻尺寸的第二沟槽图案; 将所述第二沟槽图案转移到所述覆盖层中并进入所述互连之间的所述介电层; 并且通过夹住介电层中的沟槽而沉积另一介质层以形成气隙。

2. 发明授权

US07943480B2 Sub-lithographic dimensioned air gap formation and related structure 有权
标题翻译：亚光刻尺寸气隙形成及相关结构
公开(公告)号：US07943480B2
公开(公告)日：2011-05-17
申请号：US12029800
申请日：2008-02-12
申请人： Daniel C. Edelstein , Nicholas C. M. Fuller , David V. Horak , Elbert E. Huang , Wai-Kin Li , Anthony D. Lisi , Satyanarayana V. Nitta , Shom Ponoth
发明人： Daniel C. Edelstein , Nicholas C. M. Fuller , David V. Horak , Elbert E. Huang , Wai-Kin Li , Anthony D. Lisi , Satyanarayana V. Nitta , Shom Ponoth
IPC分类号： H01L23/00
CPC分类号： H01L21/7682 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： Sub-lithographic dimensioned air gap formation and related structure are disclosed. In one embodiment, a method includes forming a dielectric layer including interconnects on a substrate; depositing a cap layer on the dielectric layer; depositing a photoresist over the cap layer; patterning the photoresist to include a first trench pattern at most partially overlying the interconnects; forming a spacer within the first trench pattern to form a second trench pattern having a sub-lithographic dimension; transferring the second trench pattern into the cap layer and into the dielectric layer between the interconnects; and depositing another dielectric layer to form an air gap by pinching off the trench in the dielectric layer.
摘要翻译：公开了亚光刻尺寸气隙形成和相关结构。在一个实施例中，一种方法包括在衬底上形成包括互连的介质层; 在电介质层上沉积盖层; 在所述盖层上沉积光致抗蚀剂; 图案化光致抗蚀剂以包括最多部分地覆盖互连的第一沟槽图案; 在所述第一沟槽图案内形成间隔物以形成具有亚光刻尺寸的第二沟槽图案; 将所述第二沟槽图案转移到所述覆盖层中并进入所述互连之间的所述介电层; 并且通过夹住介电层中的沟槽而沉积另一介质层以形成气隙。

3. 发明申请

US20080175527A1 WAVEGUIDE POLARIZATION BEAM SPLITTERS AND METHOD OF FABRICATING A WAVEGUIDE WIRE-GRID POLARIZATION BEAM SPLITTER 有权
标题翻译：波导偏振光束分离器及波导波导极化分束器的制作方法
公开(公告)号：US20080175527A1
公开(公告)日：2008-07-24
申请号：US11870463
申请日：2007-10-11
申请人： Charles T. Black , Gian-Luca Bona , Timothy J. Dalton , Nicholas C. M. Fuller , Roland Germann , Maurice McGlashan-Powell , Chandrasekhar Narayan , Robert L. Sandstrom
发明人： Charles T. Black , Gian-Luca Bona , Timothy J. Dalton , Nicholas C. M. Fuller , Roland Germann , Maurice McGlashan-Powell , Chandrasekhar Narayan , Robert L. Sandstrom
IPC分类号： G02B6/00
CPC分类号： G02B6/126 , B29D11/00759 , G02B6/136 , G02B2006/1215
摘要： A method in effectuating the redirection of light which is propagated within a waveguide, and which eliminates the necessity for a bending of the waveguide, or the drawbacks encountered in directional changes in propagated light involving the need for sharp curves of essentially small-sized radii, which would resultingly lead to excessive losses in light. In this connection, the method relates to the fabricating and the provision of a wire-grid polarization beam splitter within an optical waveguide, which utilizes a diblock copolymer template to formulate the wire-grid.
摘要翻译：实现在波导内传播的光的重定向并且消除波导的弯曲的必要性的方法或者涉及需要基本上小的半径的尖锐曲线的传播光的方向性变化中遇到的缺点，这将导致轻微的过度损失。在这方面，该方法涉及在光波导内制造和提供线栅偏振分束器，其利用二嵌段共聚物模板来配制线栅。

4. 发明授权

US07352064B2 Multiple layer resist scheme implementing etch recipe particular to each layer 有权
标题翻译：多层抗蚀剂方案实现每层特有的蚀刻配方
公开(公告)号：US07352064B2
公开(公告)日：2008-04-01
申请号：US10904323
申请日：2004-11-04
申请人： Nicholas C. M. Fuller , Timothy J. Dalton , Raymond Joy , Yi-hsiung Lin , Chun Hui Low
发明人： Nicholas C. M. Fuller , Timothy J. Dalton , Raymond Joy , Yi-hsiung Lin , Chun Hui Low
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/4763
CPC分类号： H01L21/76802 , H01L21/0332 , H01L21/31138 , H01L21/31144
摘要： Methods of forming a metal line and/or via critical dimension (CD) in a single or dual damascene process on a semiconductor substrate, and the resist scheme implemented, are disclosed. The method includes forming a multiple layer resist scheme including a first planarizing layer of a first type material over the substrate, a second dielectric layer of a second type material over the planarizing layer, and a third photoresist layer of a third type material over the dielectric layer. The types of material alternate between organic and inorganic material. The third layer is patterned for the metal line and/or via CD. Sequential etching to form the metal line and/or via critical dimension using a tailored etch recipe particular to each of the first photoresist layer, the second dielectric layer and the third planarizing layer as each layer is exposed is then used. Accurate CD formation and adequate resist budget are provided.
摘要翻译：公开了在半导体衬底上的单镶嵌或双镶嵌工艺中形成金属线和/或通过临界尺寸（CD）的方法和实现的抗蚀剂方案。该方法包括形成多层抗蚀剂方案，该多层抗蚀剂方案包括在该衬底上的第一类型材料的第一平坦化层，平坦化层上的第二类型材料的第二电介质层，以及在电介质上的第三类型材料的第三光致抗蚀剂层层。有机材料和无机材料之间的材料类型是交替的。第三层被图案化为金属线和/或经由CD。然后使用对每一个被暴露的第一光致抗蚀剂层，第二介电层和第三平坦化层中的每一个特定的定制蚀刻配方进行顺序蚀刻以形成金属线和/或通过临界尺寸。提供准确的CD形成和足够的抗蚀剂预算。

5. 发明授权

US08232171B2 Structure with isotropic silicon recess profile in nanoscale dimensions 有权
标题翻译：具有纳米级尺寸的各向同性硅凹槽轮廓的结构
公开(公告)号：US08232171B2
公开(公告)日：2012-07-31
申请号：US12561704
申请日：2009-09-17
申请人： Sebastian Ulrich Engelmann , Nicholas C. M. Fuller , Eric Andrew Joseph , Isaac Lauer , Ryan M. Martin , James Vichiconti , Ying Zhang
发明人： Sebastian Ulrich Engelmann , Nicholas C. M. Fuller , Eric Andrew Joseph , Isaac Lauer , Ryan M. Martin , James Vichiconti , Ying Zhang
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L21/0237 , H01L21/02639 , H01L21/3065 , H01L21/3083 , H01L29/165 , H01L29/66636 , H01L29/78 , Y10S438/938
摘要： A trench is formed by an anisotropic etch in a semiconductor material layer employing a masking layer, which can be gate spacers. In one embodiment, an adsorbed fluorine layer is provided at a cryogenic temperature only on vertical sidewalls of the semiconductor structure including the sidewalls of the trench. The adsorbed fluorine layer removes a controlled amount of the underlying semiconductor material once the temperature is raised above the cryogenic temperature. The trench can be filled with another semiconductor material to generate stress in the semiconductor material layer. In another embodiment, the semiconductor material is laterally etched by a plasma-based etch at a controlled rate while a horizontal portion of a contiguous oxide liner prevents etch of the semiconductor material from the bottom surface of the trench.
摘要翻译：通过使用可以是栅极间隔物的掩模层的半导体材料层中的各向异性蚀刻形成沟槽。在一个实施例中，仅在包括沟槽的侧壁的半导体结构的垂直侧壁处在低温温度下提供吸附的氟层。一旦温度升高到低于低温的温度，吸附的氟层就可去除受控量的底层半导体材料。沟槽可以用另一种半导体材料填充以在半导体材料层中产生应力。在另一个实施例中，通过基于等离子体的蚀刻以受控的速率横向蚀刻半导体材料，而邻接氧化物衬垫的水平部分防止半导体材料从沟槽的底表面蚀刻。

6. 发明授权

US07298935B1 Waveguide polarization beam splitters and method of fabricating a waveguide wire-grid polarization beam splitter 有权
标题翻译：波导偏振分束器及制造波导线栅偏振光束分离器的方法
公开(公告)号：US07298935B1
公开(公告)日：2007-11-20
申请号：US11415923
申请日：2006-05-01
申请人： Charles T. Black , Gian-Luca Bona , Timothy J. Dalton , Nicholas C. M. Fuller , Roland Germann , Maurice McGlashan-Powell , Chandrasekhar Narayan , Robert L. Sandstrom
发明人： Charles T. Black , Gian-Luca Bona , Timothy J. Dalton , Nicholas C. M. Fuller , Roland Germann , Maurice McGlashan-Powell , Chandrasekhar Narayan , Robert L. Sandstrom
IPC分类号： G02B6/00
CPC分类号： G02B6/126 , B29D11/00759 , G02B6/136 , G02B2006/1215
摘要： A method in effectuating the redirection of light which is propagated within a waveguide, and which eliminates the necessity for a bending of the waveguide, or the drawbacks encountered in directional changes in propagated light involving the need for sharp curves of essentially small-sized radii, which would resultingly lead to excessive losses in light. In this connection, the method relates to the fabricating and the provision of a wire-grid polarization beam splitter within an optical waveguide, which utilizes a diblock copolymer template to formulate the wire-grid.
摘要翻译：实现在波导内传播的光的重定向并且消除波导的弯曲的必要性的方法或者涉及需要基本上小的半径的尖锐曲线的传播光的方向性变化中遇到的缺点，这将导致轻微的过度损失。在这方面，该方法涉及在光波导内制造和提供线栅偏振分束器，其利用二嵌段共聚物模板来配制线栅。

7. 发明授权

US07253116B2 High ion energy and reative species partial pressure plasma ash process 有权
标题翻译：高离子能量和反应物质分压等离子体灰分过程
公开(公告)号：US07253116B2
公开(公告)日：2007-08-07
申请号：US10904608
申请日：2004-11-18
申请人： Nicholas C. M. Fuller , Timothy J. Dalton
发明人： Nicholas C. M. Fuller , Timothy J. Dalton
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/76802 , G03F7/427 , H01L21/31138
摘要： A high ion energy and high pressure O2/CO-based plasma for ashing field photoresist material subsequent to via-level damascene processing. The optimized plasma ashing process is performed at greater than approximately 300 mT pressure and ion energy greater than approximately 500 W conditions with an oxygen partial pressure of greater than approximately 85%. The rapid ash rate of the high pressure/high ion energy process and minimal dissociation conditions (no “source” power is applied) allow minimal interaction between the interlevel dielectric and ash chemistry to achieve minimal overall sidewall modification of less than approximately 5 nm.
摘要翻译：用于经过层级镶嵌处理之后灰化场致光材料的高离子能量和高压O 2 2 / CO基等离子体。优化的等离子体灰化过程在大于约300mT的压力下进行，离子能量大于约500W条件，氧分压大于约85％。高压/高离子能量过程的快速灰分速率和最小解离条件（不施加“源”功率）允许层间电介质和灰分化学之间的最小相互作用，以实现小于约5nm的最小总体侧壁修饰。

8. 发明授权

US08916054B2 High fidelity patterning employing a fluorohydrocarbon-containing polymer 有权
标题翻译：采用含氟代烃基聚合物的高保真图案
公开(公告)号：US08916054B2
公开(公告)日：2014-12-23
申请号：US13281749
申请日：2011-10-26
申请人： Markus Brink , Sebastian U. Engelmann , Nicholas C. M. Fuller , Michael A. Guillorn , Hiroyuki Miyazoe , Masahiro Nakamura
发明人： Markus Brink , Sebastian U. Engelmann , Nicholas C. M. Fuller , Michael A. Guillorn , Hiroyuki Miyazoe , Masahiro Nakamura
IPC分类号： B44C1/22 , H01L21/033 , H01L21/311 , G03F7/40 , G03F7/09
CPC分类号： G03F7/094 , G03F7/091 , G03F7/40 , H01L21/0332 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , Y10T428/24479
摘要： A stack of a hard mask layer, a soft mask layer, and a photoresist is formed on a substrate. The photoresist is patterned to include at least one opening. The pattern is transferred into the soft mask layer by an anisotropic etch, which forms a carbon-rich polymer that includes more carbon than fluorine. The carbon-rich polymer can be formed by employing a fluorohydrocarbon-containing plasma generated with fluorohydrocarbon molecules including more hydrogen than fluorine. The carbon-rich polymer coats the sidewalls of the soft mask layer, and prevents widening of the pattern transferred into the soft mask. The photoresist is subsequently removed, and the pattern in the soft mask layer is transferred into the hard mask layer. Sidewalls of the hard mask layer are coated with the carbon-rich polymer to prevent widening of the pattern transferred into the hard mask.
摘要翻译：在基板上形成硬掩模层，软掩模层和光致抗蚀剂的堆叠。图案化光致抗蚀剂以包括至少一个开口。该图案通过各向异性蚀刻转移到软掩模层中，其形成包含比氟更多的碳的富碳聚合物。富含碳的聚合物可以通过使用包含比氟更多的氢的氟代烃分子产生的含氟代烃等离子体形成。富含碳的聚合物涂覆软掩模层的侧壁，并且防止转移到软掩模中的图案的加宽。随后去除光致抗蚀剂，并将软掩模层中的图案转移到硬掩模层中。用富含碳的聚合物涂覆硬掩模层的侧壁以防止转移到硬掩模中的图案变宽。

9. 发明授权

US07935637B2 Resist stripping methods using backfilling material layer 有权
标题翻译：使用回填材料层的抗剥落方法
公开(公告)号：US07935637B2
公开(公告)日：2011-05-03
申请号：US11839934
申请日：2007-08-16
申请人： Nicholas C. M. Fuller , Sivananda Kanakasabapathy , Ying Zhang
发明人： Nicholas C. M. Fuller , Sivananda Kanakasabapathy , Ying Zhang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31133 , H01L21/31058 , H01L21/31138
摘要： A method for fabricating a microelectronic structure provides for forming a backfilling material layer at least laterally adjacent, and preferably laterally adjoining, a resist layer located over a substrate. Preferably, the resist layer comprises a surface treated resist layer. Optionally, the backfilling material layer may be surface treated similarly to the surface treated resist layer. Under such circumstances: (1) surface portions of the backfilling material layer and resist layer; and (2) remaining portions of the backfilling material layer and resist layer, may be sequentially stripped using a two step etch method, such as a two step plasma etch method. Alternatively, a surface portion of the surface treated resist layer only may be stripped while using a first etch method, and the remaining portions of the resist layer and backfilling material layer may be planarized prior to being simultaneously stripped while using a second etch method.
摘要翻译：用于制造微电子结构的方法提供了形成位于衬底上方的至少侧向邻近且优选地横向邻接的抗蚀剂层的回填材料层。优选地，抗蚀剂层包括表面处理的抗蚀剂层。任选地，回填材料层可以与表面处理的抗蚀剂层类似地进行表面处理。在这种情况下：（1）回填材料层和抗蚀剂层的表面部分; 和（2）回填材料层和抗蚀剂层的剩余部分可以使用两步蚀刻方法，例如两步等离子体蚀刻方法来顺序剥离。或者，仅使用第一蚀刻方法剥离表面处理的抗蚀剂层的表面部分，并且可以在使用第二蚀刻方法同时剥离之前将抗蚀剂层和回填材料层的其余部分平坦化。

10. 发明授权

US07811926B2 Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics 有权
标题翻译：多层硬掩模方案，用于SiCOH电介质的无损双重镶嵌加工
公开(公告)号：US07811926B2
公开(公告)日：2010-10-12
申请号：US12198602
申请日：2008-08-26
申请人： Nicholas C. M. Fuller , Stephen McConnell Gates , Timothy J. Dalton
发明人： Nicholas C. M. Fuller , Stephen McConnell Gates , Timothy J. Dalton
IPC分类号： H01L21/00
CPC分类号： H01L21/0331 , H01L21/76811 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/12576 , Y10T428/12611 , Y10T428/31667 , H01L2924/00
摘要： Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.
摘要翻译：具有用于90nm以上的有机硅酸盐玻璃基材料的互连结构，其中描述了使用线路优先方法的多层硬掩模的BEOL技术。本发明的互连结构实现了相应的改进的器件/互连性能，并且由于不暴露OSG材料以抵抗去除等离子体以及由于交替的无机/有机多层硬掩模堆叠而提供了实质的双镶嵌工艺窗口。后一特征意味着对于在特定蚀刻步骤期间被蚀刻的每个无机层，该领域中相应的图案转移层是有机的，反之亦然。

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