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    • 1. 发明授权
    • System for parallel processing of workpieces
    • 工件并行加工系统
    • US06326755B1
    • 2001-12-04
    • US09547551
    • 2000-04-12
    • Daniel BabbsTimothy EwaldMatthew CoadyJae Kim
    • Daniel BabbsTimothy EwaldMatthew CoadyJae Kim
    • B25J922
    • B25J18/04B25J9/042H01L21/67766
    • A dual paddle end effector robot is disclosed which is capable of parallel processing of workpieces. The end effector includes a lower paddle rotatably coupled to an end of the distal link, and an upper paddle rotatably coupled to the lower paddle. The lower paddle supports a drive assembly capable of rotating the upper paddle with respect to the lower paddle. In one embodiment of the present invention, the dual paddle end effector robot may be used within a wafer sorter to perform parallel processing of workpieces on a pair of aligners within the sorter. In such an embodiment, the robot may first acquire a pair of workpieces from adjacent shelves within the workpiece cassette. After withdrawing from the cassette, the respective paddles on the end effector may fan out and transfer the wafers to the chucks of the respective aligners. After processing of the workpieces on the aligners is complete, the fanned end effector paddles may re acquire the workpieces, the upper paddle may return to its home position located directly over the lower paddle, and then return the processed workpieces to their original cassette or to a new cassette. Parallel processing of workpieces in this fashion provides significantly greater throughput than in conventional wafer sorter systems. Throughput may be improved still further by providing buffering locations for the workpieces at the respective aligners.
    • 公开了一种能够并行处理工件的双桨式末端执行器机器人。 末端执行器包括可旋转地联接到远侧连杆的端部的下桨,以及可旋转地联接到下桨的上桨。 下桨支撑能够使上桨相对于下桨旋转的驱动组件。 在本发明的一个实施例中,双桨式末端执行器机器人可以在晶片分拣机内使用,以在分拣机内的一对对准器上执行工件的并行处理。 在这样的实施例中,机器人可以首先从工件盒内的相邻货架获取一对工件。 在从盒子退出之后,端部执行器上的各个叶片可以扇出并将晶片传送到各个对准器的卡盘。 在对准器上的工件处理完成之后,扇形末端执行器桨叶可以重新获取工件,上部桨叶可以返回到位于下部桨叶正下方的原始位置,然后将经处理的工件返回到其原始盒子或 一个新的盒子。 以这种方式并行处理工件比传统的晶片分选机系统提供显着更大的生产量。 通过在相应的对准器处为工件提供缓冲位置,可以进一步改善生产量。
    • 8. 发明申请
    • METHOD OF FABRICATING FLASH MEMORY DEVICE USING SIDEWALL PROCESS
    • 使用边框工艺制作闪存存储器件的方法
    • US20070243681A1
    • 2007-10-18
    • US11766758
    • 2007-06-21
    • Jae Kim
    • Jae Kim
    • H01L21/336
    • H01L27/11521H01L27/115
    • A method of fabricating a flash memory device includes depositing and etching an insulating layer on a substrate having STI structures, depositing a first polysilicon layer over the insulating layer and the substrate, etching the first polysilicon layer to form floating gates and removing the insulating layer. The method also includes forming a first photoresist pattern, performing a first ion implantation using the first photoresist pattern to form first source/drain regions in the substrate and adjacent to the floating gate, removing the first photoresist pattern, depositing an ONO layer on the resulting structure, depositing a second polysilicon layer over the ONO layer, and etching the second polysilicon layer to form a control gate and at least one select gate. The method concludes by forming a second photoresist pattern and performing a second ion implantation using the second photoresist pattern to form second source/drain regions in the substrate and adjacent to the select gate.
    • 一种制造闪速存储器件的方法包括在具有STI结构的衬底上沉积和蚀刻绝缘层,在绝缘层和衬底上沉积第一多晶硅层,蚀刻第一多晶硅层以形成浮动栅极并去除绝缘层。 该方法还包括形成第一光致抗蚀剂图案,使用第一光致抗蚀剂图案进行第一离子注入,以在衬底中形成第一源极/漏极区域并与浮置栅极相邻,去除第一光致抗蚀剂图案,在所得到的光刻胶图案上沉积ONO层 在所述ONO层上沉积第二多晶硅层,以及蚀刻所述第二多晶硅层以形成控制栅极和至少一个选择栅极。 该方法通过形成第二光致抗蚀剂图案并且使用第二光致抗蚀剂图案执行第二离子注入来形成第二源极/漏极区域并且邻近选择栅极。