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    • 5. 发明授权
    • Oscillator
    • 振荡器
    • US08653900B2
    • 2014-02-18
    • US12921668
    • 2009-03-13
    • Kenichi SatoTomoaki Yamamoto
    • Kenichi SatoTomoaki Yamamoto
    • H03B5/36
    • H03B5/36H03K5/003
    • There is provided an oscillator using a high-frequency crystal resonator which can satisfy the drive level needed for the crystal resonator and expand a variable frequency range. An oscillator having an oscillation circuit CC for oscillating the resonator SS is provided with a limiter circuit LM1 as a load of the resonator SS which is inductive and is a load circuit for limiting an oscillation amplitude. According to this configuration, the action of the limiter circuit LM1 allows satisfaction of the drive level needed for the crystal resonator and expansion of the variable frequency range.
    • 提供了使用能够满足晶体谐振器所需的驱动电平并扩大可变频率范围的高频晶体谐振器的振荡器。 具有用于振荡谐振器SS的振荡电路CC的振荡器设置有限制电路LM1作为感应式谐振器SS的负载,并且是用于限制振荡幅度的负载电路。 根据该结构,限幅电路LM1的作用使得满足晶体谐振器所需的驱动电平和扩大可变频率范围。
    • 6. 发明申请
    • PHOTODIODE ARRAY
    • 光斑阵列
    • US20130270666A1
    • 2013-10-17
    • US13881949
    • 2011-10-24
    • Kenichi SatoKazuhisa YamamuraShinji Ohsuka
    • Kenichi SatoKazuhisa YamamuraShinji Ohsuka
    • H01L27/144
    • H01L27/1446H01L27/146H01L27/14643H01L31/02027
    • This photodiode array 10 includes quenching resistors 7 which are connected in series to respective avalanche photodiodes APDs, a peripheral wiring WL which surrounds a region in which the plurality of avalanche photodiodes APDs are formed, and a plurality of relay wirings 8 which are electrically connected to the peripheral wiring WL, so as to respectively connect at least two places of the peripheral wiring WL. One of an anode and a cathode of each avalanche photodiode APD is electrically connected to any one of the relay wirings 8 via the quenching resistor 7, and the other of the anode and the cathode of each avalanche photodiode APD is electrically connected to another electrode 6 provided on a semiconductor substrate.
    • 该光电二极管阵列10包括与相应的雪崩光电二极管APD串联连接的淬火电阻器7,围绕形成有多个雪崩光电二极管APD的区域的外围布线WL,以及多个继电器布线8, 周边布线WL,以分别连接外围布线WL的至少两个位置。 每个雪崩光电二极管APD的阳极和阴极之一经由淬火电阻7与继电器布线8中的任何一个电连接,并且每个雪崩光电二极管APD的阳极和阴极中的另一个电连接到另一个电极6 设置在半导体基板上。
    • 10. 发明申请
    • PHOTODIODE ARRAY
    • 光斑阵列
    • US20110227183A1
    • 2011-09-22
    • US13116525
    • 2011-05-26
    • Kazuhisa YamamuraKenichi Sato
    • Kazuhisa YamamuraKenichi Sato
    • H01L31/02
    • H01L27/1446H01L27/14H01L27/14603H01L27/14605H01L27/14636H01L31/107
    • A photodiode array 1 has a plurality of photodetector channels 10 which are formed on an n-type substrate 2 having an n-type semiconductor layer 12, with a light to be detected being incident to the plurality of photodetector channels 10. The photodiode array 1 comprises: a p−-type semiconductor layer 13 formed on the n-type semiconductor layer 12 of the substrate 2; resistors 4 each of which is provided to each of the photodetector channels 10 and is connected to a signal conductor 3 at one end thereof; and an n-type separating part 20 formed between the plurality of photodetector channels 10. The p−-type semiconductor layer 13 forms a pn junction at the interface between the substrate 2, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels. The separating part 20 is formed so that each of the multiplication regions AM of the p−-type semiconductor layer 13 corresponds to each of the photodetector channels 10.
    • 光电二极管阵列1具有多个光电检测器通道10,其形成在具有n型半导体层12的n型衬底2上,待检测的光入射到多个光电检测器通道10.光电二极管阵列1 包括:形成在基板2的n型半导体层12上的ap型半导体层13; 电阻器4,每个电阻器4设置在每个光电检测器通道10上,并且在其一端连接到信号导体3; 以及形成在多个光电检测器通道10之间的n型分离部分20.p型半导体层13在衬底2之间的界面处形成pn结,并且包括用于载流子雪崩乘法的多个乘法区域AM 由所检测的光的入射产生,使得每个乘法区域对应于每个光电检测器通道。 分离部20被形成为使得p型半导体层13的每个乘法区域AM对应于每个光电检测器通道10。