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1. 发明授权

US08795184B2 Wireless plethysmogram sensor unit, a processing unit for plethysmogram and a plethysmogram system 有权
标题翻译：无线体积描记传感器单元，体积描记图处理单元和体积描记图系统
公开(公告)号：US08795184B2
公开(公告)日：2014-08-05
申请号：US13179814
申请日：2011-07-11
申请人： Daisuke Niwa , Koji Terumoto , Kazuhiro Oguchi , Masahide Tanaka , Ken Nakahara
发明人： Daisuke Niwa , Koji Terumoto , Kazuhiro Oguchi , Masahide Tanaka , Ken Nakahara
IPC分类号： A61B5/02 , A61B5/024 , A61B5/1455 , A61B5/16 , A61B5/00
CPC分类号： A61B5/002 , A61B5/0022 , A61B5/02416 , A61B5/14551 , A61B5/164 , A61B5/165 , A61B5/4815 , A61B5/6802 , A61B5/6826 , A61B2503/10 , A61B2503/12 , A61B2503/40 , A61B2505/07
摘要： A wireless plethysmogram sensor unit is capable of obtaining a plethysmogram from a living tissue of a measuring object and of transmitting the plethysmogram to a processing unit outside the wireless plethysmogram sensor unit. The sensor unit includes a light source to emit measuring light into the living tissue and a light receiving element to receive light emerging from the tissue, which is accompanied by pulsation caused by absorption by arteries in the tissue. A memory stores a plethysmogram obtained in accordance with the light received by the light receiving element. A short range wireless communicator transmits the plethysmogram to the processing unit. A power source provides power to other elements in the sensor unit, and a controller controls the elements of the sensor unit.
摘要翻译：无线体积描记传感器单元能够从测量对象的生物体组织获取体积图，并将体积图传送到无线体积描记传感器单元外部的处理单元。传感器单元包括用于将测量光发射到生物体组织中的光源和用于接收从组织出射的光的光接收元件，其伴随着由组织中的动脉的吸收引起的脉动。存储器存储根据由光接收元件接收的光获得的体积图。短距离无线通信器将体积图传送到处理单元。电源为传感器单元中的其他元件提供电力，并且控制器控制传感器单元的元件。

2. 发明申请

US20120022382A1 WIRELESS PLETHYSMOGRAM SENSOR UNIT, A PROCESSING UNIT FOR PLETHYSMOGRAM AND A PLETHYSMOGRAM SYSTEM 有权
标题翻译：无线传感器传感器单元，PLTHYSMOGRAM和PLTHYSMOGRAM系统的处理单元
公开(公告)号：US20120022382A1
公开(公告)日：2012-01-26
申请号：US13179814
申请日：2011-07-11
申请人： Niwa Daisuke , Koji Terumoto , Kazuhiro Oguchi , Masahide Tanaka , Ken Nakahara
发明人： Niwa Daisuke , Koji Terumoto , Kazuhiro Oguchi , Masahide Tanaka , Ken Nakahara
IPC分类号： A61B5/02
CPC分类号： A61B5/002 , A61B5/0022 , A61B5/02416 , A61B5/14551 , A61B5/164 , A61B5/165 , A61B5/4815 , A61B5/6802 , A61B5/6826 , A61B2503/10 , A61B2503/12 , A61B2503/40 , A61B2505/07
摘要： A wireless plethysmogram sensor unit is capable of obtaining a plethysmogram from a living tissue of a measuring object and of transmitting the plethysmogram to a processing unit outside the wireless plethysmogram sensor unit. The sensor unit includes a light source to emit measuring light into the living tissue and a light receiving element to receive light emerging from the tissue, which is accompanied by pulsation caused by absorption by arteries in the tissue. A memory stores a plethysmogram obtained in accordance with the light received by the light receiving element. A short range wireless communicator transmits the plethysmogram to the processing unit. A power source provides power to other elements in the sensor unit, and a controller controls the elements of the sensor unit.
摘要翻译：无线体积描记传感器单元能够从测量对象的生物体组织获取体积图，并将体积图传送到无线体积描记传感器单元外部的处理单元。传感器单元包括用于将测量光发射到生物体组织中的光源和用于接收从组织出射的光的光接收元件，其伴随着由组织中的动脉的吸收引起的脉动。存储器存储根据由光接收元件接收的光获得的体积图。短距离无线通信器将体积图传送到处理单元。电源为传感器单元中的其他元件提供电力，并且控制器控制传感器单元的元件。

3. 发明授权

US08941105B2 Zinc oxide based compound semiconductor light emitting device 有权
标题翻译：氧化锌类化合物半导体发光元件
公开(公告)号：US08941105B2
公开(公告)日：2015-01-27
申请号：US11886918
申请日：2006-03-23
申请人： Ken Nakahara
发明人： Ken Nakahara
IPC分类号： H01L29/10 , H01S5/327 , H01L33/28 , H01L21/02 , H01L33/16 , H01S5/042 , H01S5/22 , H01S5/223
CPC分类号： H01S5/327 , H01L21/02403 , H01L21/02414 , H01L21/02433 , H01L21/02554 , H01L21/02576 , H01L21/02579 , H01L21/02609 , H01L21/02631 , H01L33/16 , H01L33/28 , H01S5/0422 , H01S5/2224 , H01S5/2231
摘要： There is provided a semiconductor light emitting device in which light emitting efficiency is totally improved in case of emitting a light having a short wavelength of 400 nm or less by raising internal quantum efficiency by enhancing crystallinity of semiconductor layers laminated and by raising external quantum efficiency by taking out the light emitted by preventing the light emitted from being absorbed in the substrate or the like, as much as possible. In case of laminating ZnO compound semiconductor layers (2 to 6) so as to form a light emitting layer forming portion (7) for emitting the light having a wavelength of 400 nm or less on a substrate (1), a substrate composed of MgxZn1-xO (0≦x≦0.5) is used as the substrate (1).
摘要翻译：提供了一种半导体发光器件，其中通过提高层叠的半导体层的结晶度并通过提高外部量子效率来提高内部量子效率，并且通过提高外部量子效率来发射具有400nm或更小的短波长的光的发光效率得到全面改善通过防止发射的光被吸收在基板等中而发出的光被尽可能多地取出。在层叠ZnO化合物半导体层（2〜6）以在基板（1）上形成发光波长为400nm以下的光的发光层形成部（7）的情况下，将由Mg x Zn 1 -xO（0＆nlE; x＆nlE; 0.5）用作衬底（1）。

4. 发明授权

US07948003B2 Transparent electrode 有权
标题翻译：透明电极
公开(公告)号：US07948003B2
公开(公告)日：2011-05-24
申请号：US12177090
申请日：2008-07-21
申请人： Ken Nakahara
发明人： Ken Nakahara
IPC分类号： H01L33/42
CPC分类号： H01L33/42
摘要： In order to emit a light from an electrode side, in semiconductor light emitting devices such as LED and the like, and liquid crystal, the electrode is formed of a transparent material so as to transmit a light through the transparent electrode and exit the light. A ZnO, which constitutes a material for the transparent electrode, is subject to erosion by acid and alkali, thus, as the case may cause loss of a reliability of the electrode under the influence of ion-containing moisture. In order to solve such a problem, this invention has as its aim a transparent electrode film provided with stability capable of preventing any degradation under the influence of any ion-containing moisture, while being kept acid-proof and alkali-proof. In order to accomplish the above-mentioned aim, this invention provides a transparent electrode made up of a ZnO as its main material, wherein its surface is covered with a Mg-doped ZnO film.
摘要翻译：为了从电极侧发出光，在诸如LED等的半导体发光器件和液晶中，电极由透明材料形成，以便透过透明电极发出光并离开光。构成透明电极的材料的ZnO被酸碱侵蚀，因此在离子含水分的影响的情况下可能导致电极的可靠性降低。为了解决这个问题，本发明的目的是提供具有稳定性的透明电极膜，其能够在保持耐酸碱性的同时防止在任何含离子的水分的影响下的任何劣化。为了实现上述目的，本发明提供一种由ZnO作为其主要材料的透明电极，其表面被掺杂了Mg的ZnO膜覆盖。

5. 发明申请

US20100323160A1 ZnO-BASED THIN FILM 审中-公开
标题翻译：基于ZnO的薄膜
公开(公告)号：US20100323160A1
公开(公告)日：2010-12-23
申请号：US12526113
申请日：2008-02-06
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： B32B33/00 , C30B29/16 , B32B9/00
CPC分类号： H01L21/02554 , C30B23/02 , C30B29/16 , H01L21/02403 , H01L21/0243 , H01L21/02433 , H01L21/0262 , Y10T428/24355 , Y10T428/2457 , Y10T428/24612
摘要： Provided is a ZnO-based thin film for growing a flat film when the ZnO-based thin film is formed on a substrate. In FIG. 1(a), a ZnO-based film 2 is formed on a ZnO-based substrate 1. Meanwhile, in FIG. 1(b), a ZnO-based laminated body 10 that is a laminated body of ZnO-based thin films is formed on the ZnO-based substrate 1. The ZnO-based laminated body 10 is the laminated body in which multiple ZnO-based thin films including a ZnO-based thin film 3, a ZnO-based thin film 4 and the like are laminated. When forming the ZnO-based thin film 2 or the ZnO-based laminated body 10, the film or the body is formed at a growth temperature of 750° C. or above, or alternatively, a step structure on a surface of the film is formed into a predetermined structure such that roughness on the surface of the film is in a predetermined range.
摘要翻译：提供了当在基板上形成ZnO基薄膜时用于生长平坦膜的ZnO基薄膜。在图如图1（a）所示，在ZnO系基板1上形成ZnO系膜2。如图1（b）所示，在ZnO系基板1上形成作为ZnO系薄膜的层叠体的ZnO系叠层体10. ZnO系叠层体10为多层ZnO系层叠包含ZnO系薄膜3，ZnO系薄膜4等的薄膜。当形成ZnO基薄膜2或ZnO基层叠体10时，在750℃以上的生长温度下形成薄膜或者本体，或者也可以在薄膜的表面上形成台阶结构形成为预定结构，使得薄膜表面上的粗糙度处于预定范围内。

6. 发明申请

US20100308327A1 ZnO-BASED SUBSTRATE, METHOD FOR PROCESSING ZnO-BASED SUBSTRATE, AND ZnO-BASED SEMICONDUCTOR DEVICE 审中-公开
标题翻译：基于ZnO的衬底，用于处理基于ZnO的衬底的方法和基于ZnO的半导体器件
公开(公告)号：US20100308327A1
公开(公告)日：2010-12-09
申请号：US12865550
申请日：2009-01-30
申请人： Ken Nakahara , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： H01L29/22 , H01L21/36
CPC分类号： C30B29/16 , C30B33/12
摘要： Provided are a ZnO-based substrate having a high-quality surface suitable for crystal growth, a method for processing the ZnO-based substrate, and a ZnO-based semiconductor device. The ZnO-based substrate is formed such that any one of a carboxyl group and a carbonate group is substantially absent in a principal surface on a crystal growth side. Also, in order for a carboxyl group or a carbonate group to be substantially absent, any one of oxygen radicals, oxygen plasma and ozone is brought into contact with the surface of the ZnO-based substrate before the crystal growth is started. Consequently, cleanness of the surface of the ZnO substrate is enhanced, thereby enabling fabrication of a high-quality ZnO-based thin film on the substrate.
摘要翻译：提供具有适合于晶体生长的高质量表面的ZnO基衬底，用于处理ZnO基衬底的方法和ZnO类半导体器件。形成ZnO基基板，使得在晶体生长侧的主表面上基本上不存在羧基和碳酸酯基中的任何一个。此外，为了基本上不存在羧基或碳酸酯基，在晶体生长开始之前，使氧自由基，氧等离子体和臭氧中的任一种与ZnO基基板的表面接触。因此，提高了ZnO基板表面的清洁度，从而能够在基板上制造高质量的ZnO基薄膜。

7. 发明申请

US20100289004A1 ZNO-BASED THIN FILM AND ZNO-BASED SEMICONDUCTOR ELEMENT 失效
标题翻译：基于ZNO的薄膜和基于ZNO的半导体元件
公开(公告)号：US20100289004A1
公开(公告)日：2010-11-18
申请号：US12664397
申请日：2008-06-13
申请人： Ken Nakahara , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： H01L29/15 , H01L29/12
CPC分类号： H01L29/7813 , H01L21/02403 , H01L21/02433 , H01L21/02472 , H01L21/02483 , H01L21/02507 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/02631 , H01L29/155 , H01L29/225 , H01L33/04 , H01L33/06 , H01L33/28
摘要： Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based thin film is formed by employing as a basic structure a superlattice structure of a MgZnO/ZnO super lattice layer 3. This superlattice component is formed with a laminated structure which includes acceptor-doped MgZnO layers 3b and acceptor-doped ZnO layers 3a. Hence, it is possible to improve controllability and reproducibility of the doping, and to prevent a change in a crystalline structure due to a doping material.
摘要翻译：提供了一种ZnO基薄膜和一种ZnO基半导体器件，其允许：减少制造装置的负担; 改善掺杂的可控性和再现性; 并获得p型导电而不改变晶体结构。为了形成p型ZnO系薄膜，通过以MgZnO / ZnO超晶格层3的超晶格结构为基本结构，形成ZnO系薄膜。该超晶格部件形成为层状结构，其包括受主掺杂的MgZnO层3b和受主掺杂的ZnO层3a。因此，可以提高掺杂的可控性和再现性，并且可以防止由掺杂材料引起的晶体结构的变化。

8. 发明申请

US20100270533A1 ZnO-BASED SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：基于ZnO的半导体元件
公开(公告)号：US20100270533A1
公开(公告)日：2010-10-28
申请号：US12733440
申请日：2008-09-05
申请人： Ken Nakahara , Hiroyuki Yuji , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： H01L29/15 , H01L29/22
CPC分类号： H01L33/16 , H01L21/02403 , H01L21/02414 , H01L21/02433 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/02609 , H01L33/0083 , H01L33/28
摘要： Provided is a ZnO-based semiconductor device capable of achieving easier conversion into p-type by alleviating the self-compensation effect and by preventing donor impurities from mixing in. The ZnO-based semiconductor device includes a MgxZn1-xO substrate (0≦x≦1) having such a principal surface that: a projection axis obtained by projecting a normal line to the principal surface onto a plane formed by an a-axis and a c-axis of substrate crystal axes is inclined towards the a-axis by an angle of φa degrees; a projection axis obtained by projecting the normal line to the principal surface onto a plane formed by an m-axis and the c-axis of the substrate crystal axes is inclined towards the m-axis by an angle of Φm degrees; the angle Φa satisfies 70≦{90−(180/π)arctan(tan(πΦa/180)/tan(πΦm/180))≦110; and the angle Φm≧1. Accordingly, a ZnO-based semiconductor layer formed on the principal surface can be easily converted into p-type because the donor impurities are prevented from mixing in and the self-compensation effect is alleviated. Thus, the desired ZnO-based semiconductor device can be fabricated.
摘要翻译：提供了一种通过减轻自补偿效应并防止供体杂质混入，可以实现更容易地转换成p型的ZnO基半导体器件。ZnO基半导体器件包括Mg x Zn 1-x O衬底（0＆amp; nlE; x＆ 1）具有这样的主表面：使通过将主线垂直于基体晶轴的a轴和c轴所形成的平面投影到由a轴和c轴构成的平面而获得的投影轴向a轴倾斜一定角度一度; 通过将由主体的法线投影到由m轴形成的平面和基板晶体轴的c轴而获得的投影轴朝向m轴倾斜Φm度的角度; 角度Φa满足70＆nlE; {90-（180 /＆pgr;）arctan（tan（＆pgr;Φa/ 180）/ tan（＆pgr;Φm/ 180））＆角度Φm≥1。因此，由于防止供体杂质混入，因此能够容易地将形成在主面上的ZnO系半导体层变为p型，从而可以缓和自补偿效果。因此，可以制造所需的ZnO基半导体器件。

9. 发明申请

US20100224892A1 Nitride Semiconductor Light Emitting Element 有权
标题翻译：氮化物半导体发光元件
公开(公告)号：US20100224892A1
公开(公告)日：2010-09-09
申请号：US12223172
申请日：2007-01-23
申请人： Ken Nakahara
发明人： Ken Nakahara
IPC分类号： H01L33/46
CPC分类号： H01L33/10 , H01L33/32 , H01L33/405 , H01L33/44
摘要： Provided is a nitride semiconductor light emitting element that has improved light extraction efficiency and a wide irradiation angle of outgoing light irrespective of the reflectance of a metal used for an electrode. An n side anti-reflection layer 2 and a p side Bragg reflection layer 4 are formed so as to sandwich an MQW active layer 3 that serves as a light emitting region, and the nitride semiconductor light emitting element has a double hetero structure. On top of the n side anti-reflection layer 2, an n electrode 1 is formed. Meanwhile, at the lower side of the p side Bragg reflection layer 4, a p electrode 5, a reflection film 7, and a pad electrode 8 are formed, and the pad electrode is bonded to a support substrate 10 with a conductive bonding layer 9 interposed in between. Both the n side anti-reflection layer 2 and the p side Bragg reflection layer 4 also serve as contact layers. The n side anti-reflection layer 2 is disposed on the light-extracting-direction side while the p side Bragg reflection layer 4 is disposed on the opposite side to the light-extracting-direction side. Consequently, the light extraction efficiency is improved.
摘要翻译：提供了与用于电极的金属的反射率无关的具有提高的光提取效率和出射光的宽的照射角的氮化物半导体发光元件。形成n侧防反射层2和p侧布拉格反射层4，以夹持用作发光区域的MQW有源层3，并且氮化物半导体发光元件具有双异质结构。在n侧防反射层2的顶部，形成n电极1。同时，在p侧布拉格反射层4的下侧形成有p电极5，反射膜7和焊盘电极8，并且将焊盘电极与导电接合层9插入的支撑基板10接合之间。 n侧防反射层2和p侧布拉格反射层4也用作接触层。 n侧防反射层2设置在取光方向侧，而p侧布拉格反射层4设置在与光提取方向相反的一侧。因此，光提取效率提高。

10. 发明授权

US07718450B2 Method for manufacturing nitride semiconductor device 有权
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US07718450B2
公开(公告)日：2010-05-18
申请号：US11920043
申请日：2006-05-08
申请人： Ken Nakahara
发明人： Ken Nakahara
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/268 , H01L29/66462 , H01L33/305
摘要： There is provided a method for manufacturing a nitride semiconductor device which has a p-type nitride semiconductor layer having a high carrier concentration (low resistance) by activating an acceptor without raising a problem of forming nitrogen vacancies which are generated when a high temperature annealing is carried out over an extended time. A semiconductor lamination portion (6) made of nitride semiconductor is formed on a substrate (1) so as to form a light emitting layer, and irradiated by a laser beam having a wavelength λ of λ=h·c/E or less (E is energy capable of separating off the bonding between Mg and H) from the front surface side of the semiconductor lamination portion. Then, a heat treatment is carried out at a temperature of 300 to 400° C. And, similarly to a process for normal nitride semiconductor LED, a light transmitting conductive layer (7) is provided, an n-side electrode (9) is formed on an n-type layer (3) exposed by removing a part of the semiconductor lamination portion by etching, and a p-side electrode (8) is formed on a surface of the light transmitting conductive layer, thereby a LED is obtained.
摘要翻译：提供了一种通过激活受主而具有具有高载流子浓度（低电阻）的p型氮化物半导体层的氮化物半导体器件的制造方法，而不会产生当高温退火时产生的形成氮空位的问题进行了漫长的时间。在基板（1）上形成由氮化物半导体构成的半导体层叠部（6），形成发光层，用波长λ为λ= h·c / E以下的激光（E 是能够分离Mg和H）之间的结合的能量与半导体层叠部分的前表面侧。然后，在300〜400℃的温度下进行热处理。与普通氮化物半导体LED的工序相同，设置透光导电层（7），n侧电极（9）为形成在通过蚀刻去除一部分半导体层叠部分而露出的n型层（3）上，并且在透光导电层的表面上形成p侧电极（8），由此获得LED。

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