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1. 发明授权

US07248697B2 Apparatus and method for scrambling and descrambling data wordwise in optical disk system 失效
标题翻译：用于在光盘系统中逐字加扰和解扰数据的装置和方法
公开(公告)号：US07248697B2
公开(公告)日：2007-07-24
申请号：US10632612
申请日：2003-08-01
申请人： Dae-Woong Kim , Soo-Woong Lee
发明人： Dae-Woong Kim , Soo-Woong Lee
IPC分类号： H04L9/00 , H04N7/167
CPC分类号： G11B20/10 , G11B20/00086 , G11B20/0021 , G11B2020/1461 , H04L25/03872 , H04N5/85 , H04N5/913 , H04N9/8042 , H04N2005/91364
摘要： An apparatus and a method for scrambling and descrambling data wordwise in an optical disk system are provided. The apparatus includes a bit storing means which stores at least 15 bits, and a calculating means which calculates first through fifteenth bits of the bit storing means in parallel during one clock cycle and inputs the results of the calculation back into the bit storing means. The calculating means performs an XOR logic operation on a seventh bit and a fifteenth bit, on a first bit, an eighth bit, and a twelfth bit, on a second bit, a ninth bit, and a thirteenth bit, on a third bit, a tenth bit, and a fourteenth bit, on a fourth bit, an eleventh bit, and a fifteenth bit, on the first bit and a fifth bit, on the second bit and a sixth bit, on a third bit and the seventh bit, on the fourth bit and the eighth bit, on the fifth bit and the ninth bit, on the sixth bit and the tenth bit, on the seventh bit and the eleventh bit, on the eighth bit and the twelfth bit, on the ninth bit and the thirteenth bit, and on the tenth bit and the fourteenth bit, and inputs the results of the XOR logic operations into the bit storing means.
摘要翻译：提供了一种用于在光盘系统中逐字加扰和解扰数据的装置和方法。该装置包括存储至少15位的比特存储装置，以及一个在一个时钟周期内并行计算比特存储装置的第一到第十五比特的计算装置，并将计算结果输入到比特存储装置中。计算装置对第三位和第十五位在第三位上的第二位，第九位和第十三位上的第一位，第八位和第十二位执行异或逻辑运算，在第三位和第七位上的第二位和第六位上的第一位和第五位上的第四位，第十位和第十五位，第十位和第十四位，在第五位和第九位，第六位和第十位，第七位和第十位，第八位和第十二位，第九位和第十三位，以及第十位和第十四位，并将XOR逻辑运算的结果输入位存储装置。

2. 发明授权

US08576638B2 Non-volatile memory device and non-volatile memory system having the same 有权
标题翻译：具有相同的非易失性存储器件和非易失性存储器系统
公开(公告)号：US08576638B2
公开(公告)日：2013-11-05
申请号：US13095159
申请日：2011-04-27
申请人： Hyung-Gon Kim , Hyuk-Jun Yoo , Youn-Yeol Lee , Soo-Woong Lee , Kyung-Min Kim
发明人： Hyung-Gon Kim , Hyuk-Jun Yoo , Youn-Yeol Lee , Soo-Woong Lee , Kyung-Min Kim
IPC分类号： G11C7/10
CPC分类号： G11C29/846 , G11C16/0483
摘要： A non-volatile memory device may include a memory cell array, a page buffer, a column decoder, a column selection circuit and a repair circuit. The memory cell array includes normal memory cells and redundancy memory cells. In one example, the page buffer may load normal data and redundancy data from the memory cell array. The column decoder may generate a normal column selection signal and a redundancy column selection signal in response to a column address. The column selection circuit may select the normal data and redundancy data in response to the normal column selection signal and redundancy column selection signal. The repair circuit may then output one of the normal data and redundancy data.
摘要翻译：非易失性存储器件可以包括存储单元阵列，页缓冲器，列解码器，列选择电路和修复电路。存储单元阵列包括正常存储单元和冗余存储单元。在一个示例中，页面缓冲器可以从存储器单元阵列加载正常数据和冗余数据。列解码器可以响应于列地址而生成正常列选择信号和冗余列选择信号。列选择电路可以响应于正常列选择信号和冗余列选择信号来选择正常数据和冗余数据。然后，修复电路可以输出正常数据和冗余数据之一。

3. 发明申请

US20110267899A1 NON-VOLATILE MEMORY DEVICE AND NON-VOLATILE MEMORY SYSTEM HAVING THE SAME 有权
标题翻译：非易失性存储器件和非易失性存储器系统
公开(公告)号：US20110267899A1
公开(公告)日：2011-11-03
申请号：US13095159
申请日：2011-04-27
申请人： Hyung-Gon Kim , Hyuk-Jun Yoo , Youn-Yeol Lee , Soo-Woong Lee , Kyung-Min Kim
发明人： Hyung-Gon Kim , Hyuk-Jun Yoo , Youn-Yeol Lee , Soo-Woong Lee , Kyung-Min Kim
IPC分类号： G11C7/10 , G11C29/04
CPC分类号： G11C29/846 , G11C16/0483
摘要： A non-volatile memory device may include a memory cell array, a page buffer, a column decoder, a column selection circuit and a repair circuit. The memory cell array includes normal memory cells and redundancy memory cells. In one example, the page buffer may load normal data and redundancy data from the memory cell array. The column decoder may generate a normal column selection signal and a redundancy column selection signal in response to a column address. The column selection circuit may select the normal data and redundancy data in response to the normal column selection signal and redundancy column selection signal. The repair circuit may then output one of the normal data and redundancy data.
摘要翻译：非易失性存储器件可以包括存储单元阵列，页缓冲器，列解码器，列选择电路和修复电路。存储单元阵列包括正常存储单元和冗余存储单元。在一个示例中，页面缓冲器可以从存储器单元阵列加载正常数据和冗余数据。列解码器可以响应于列地址而生成正常列选择信号和冗余列选择信号。列选择电路可以响应于正常列选择信号和冗余列选择信号来选择正常数据和冗余数据。然后，修复电路可以输出正常数据和冗余数据之一。

4. 发明申请

US20050032371A1 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20050032371A1
公开(公告)日：2005-02-10
申请号：US10783940
申请日：2004-02-20
申请人： Ju-Jin An , Soo-Woong Lee
发明人： Ju-Jin An , Soo-Woong Lee
IPC分类号： H01L21/027 , H01L21/033 , H01L21/306 , H01L21/3213 , H01L21/8242 , G11C16/06 , G11C11/34 , H01L21/302 , H01L21/461
CPC分类号： H01L21/32139 , H01L21/02052 , H01L21/0332 , H01L27/10855
摘要： A method of forming patterns in a semiconductor device comprises: forming a conductive film on a substrate; forming an anti-reflective layer on the conductive film; cleaning oxide residues on the anti-reflective layer using a first cleaning solution; cleaning the oxide residues on the anti-reflective layer using a second cleaning solution; forming a photoresist pattern on the anti-reflective layer; and patterning the conductive film using the photoresist pattern.
摘要翻译：在半导体器件中形成图案的方法包括：在衬底上形成导电膜; 在导电膜上形成抗反射层; 使用第一清洁溶液清洁抗反射层上的氧化物残留物; 使用第二清洁溶液清洁抗反射层上的氧化物残留物; 在抗反射层上形成光刻胶图形; 以及使用光致抗蚀剂图案来图案化导电膜。

5. 发明申请

US20120218817A1 NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件，包括其的存储器系统以及操作非易失性存储器件的方法
公开(公告)号：US20120218817A1
公开(公告)日：2012-08-30
申请号：US13342239
申请日：2012-01-03
申请人： Sangchul Kang , Seokcheon Kwon , Soo-Woong Lee
发明人： Sangchul Kang , Seokcheon Kwon , Soo-Woong Lee
IPC分类号： G11C16/10 , G11C16/06
CPC分类号： G11C16/30 , G11C11/5628 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/3436
摘要： A non-volatile memory device includes a non-volatile memory cell array including a plurality of word lines, a voltage generator configured to generate a first high-voltage using a supply voltage and a second high-voltage using an external voltage which is higher than the supply voltage, and a word line selection circuit configured. The word line selection circuit is configured apply, during a program operation of the memory cell array, the first high-voltage to a selected word line among the plurality of word lines, and the second high-voltage to unselected word lines among the plurality of word lines
摘要翻译：一种非易失性存储器件包括包括多个字线的非易失性存储单元阵列，电压发生器，其被配置为使用高于该电压的外部电压产生使用电源电压的第一高电压和第二高电压，电源电压和配置的字线选择电路。字线选择电路被配置为在存储单元阵列的编程操作期间将第一高电压施加到多个字线中的选定字线，并且多个字线中的第二高电压至未选字线字线

6. 发明授权

US06996453B2 Substrate processing apparatus and method of processing substrate while controlling for contamination in substrate transfer module 失效
标题翻译：基板处理装置和处理基板的方法，同时控制基板传送模块中的污染
公开(公告)号：US06996453B2
公开(公告)日：2006-02-07
申请号：US10684436
申请日：2003-10-15
申请人： Yo-Han Ahn , Ki-Doo Kim , Soo-Woong Lee , Jung-Sung Hwang , Hyeog-Ki Kim
发明人： Yo-Han Ahn , Ki-Doo Kim , Soo-Woong Lee , Jung-Sung Hwang , Hyeog-Ki Kim
IPC分类号： G06F7/00
CPC分类号： H01L21/00 , H01L21/67017 , Y10S414/139
摘要： A substrate processing apparatus for processing substrates prevents the substrates from contaminating as they are transferred. The apparatus includes a container, like a FOUP, for containing substrates, at least one processing chamber where the substrates are processed, a substrate transferring module including a substrate transfer chamber and at least one load port for supporting a container, and a contamination controlling system for the substrate transfer chamber. The contamination controlling system includes a purge gas supply inlet connected to the substrate transfer chamber, and a gas circulating tube for recycling the purging gas to circulate through the chamber. The substrate transfer chamber is purged using the purging gas to remove moisture and contaminating materials from the substrate transfer chamber. The formation of particles on the substrate otherwise caused by a reaction between the moisture and contaminating materials while the substrate is standing by in the container can be prevented.
摘要翻译：用于处理基板的基板处理装置防止基板在被转印时被污染。该装置包括用于容纳衬底的容器，如FOUP，用于处理衬底的至少一个处理室，包括衬底传送室的衬底传送模块和用于支撑容器的至少一个负载端口，以及污染控制系统用于衬底传送室。污染控制系统包括连接到基板传送室的吹扫气体供给入口和用于使净化气体循环通过室的气体循环管。使用净化气体清洗基板传送室，以从基板传送室去除水分和污染材料。可以防止在衬底上的颗粒在容器中待机时由水分和污染物质之间的反应引起的颗粒的形成。

7. 发明授权

US07342286B2 Electrical node of transistor and method of forming the same 失效
标题翻译：晶体管节点及其形成方法
公开(公告)号：US07342286B2
公开(公告)日：2008-03-11
申请号：US11319724
申请日：2005-12-29
申请人： Seung-Mok Shin , Jin-Hong Kim , Soo-Woong Lee
发明人： Seung-Mok Shin , Jin-Hong Kim , Soo-Woong Lee
IPC分类号： H01L29/94 , H01L21/4763
CPC分类号： H01L21/76802 , H01L21/76831 , H01L27/115 , H01L27/11521 , H01L29/7881
摘要： According to example embodiments of the present invention, there are provided an electrical node of a transistor and a method of forming the same, which may reduce or minimize current leakage between the electrical node and a semiconductor substrate when a buried contact hole exposing at least the side of an active region is arranged on the semiconductor substrate. Two gate patterns may be formed on the active region of the semiconductor substrate. Conductive layer patterns may be formed in the gate patterns and in the semiconductor substrate between the gate patterns. A buried interlayer insulating layer may be formed on the semiconductor substrate to cover the gate patterns. A buried contact hole which passes through the buried interlayer insulating layer and exposes the conductive layer pattern of the semiconductor substrate may be formed. The buried contact hole may be formed to expose at least the side of the active region. An impurity region may be formed in the semiconductor substrate below the buried contact hole. A contact hole spacer covering the sidewall of the buried contact hole may be formed. A buried conductive layer which covers the contact hole spacer and fills the buried contact hole may be formed.
摘要翻译：根据本发明的示例性实施例，提供了一种晶体管的电节点及其形成方法，其可以减少或最小化电节点和半导体衬底之间的电流泄漏，当埋入式接触孔至少暴露于有源区的一侧设置在半导体衬底上。可以在半导体衬底的有源区上形成两个栅极图案。可以在栅极图案和栅极图案之间的半导体衬底中形成导电层图案。掩埋层间绝缘层可以形成在半导体衬底上以覆盖栅极图案。可以形成通过掩埋层间绝缘层并暴露半导体衬底的导电层图案的掩埋接触孔。埋入的接触孔可以形成为暴露至少有源区域的一侧。可以在掩埋接触孔下方的半导体衬底中形成杂质区域。可以形成覆盖埋入接触孔的侧壁的接触孔间隔物。可以形成覆盖接触孔间隔物并填充埋入接触孔的掩埋导电层。

8. 发明授权

US07297638B2 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07297638B2
公开(公告)日：2007-11-20
申请号：US10783940
申请日：2004-02-20
申请人： Ju-Jin An , Soo-Woong Lee
发明人： Ju-Jin An , Soo-Woong Lee
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/32139 , H01L21/02052 , H01L21/0332 , H01L27/10855
摘要： A method of forming patterns in a semiconductor device comprises: forming a conductive film on a substrate; forming an anti-reflective layer on the conductive film; cleaning oxide residues on the anti-reflective layer using a first cleaning solution; cleaning the oxide residues on the anti-reflective layer using a second cleaning solution; forming a photoresist pattern on the anti-reflective layer; and patterning the conductive film using the photoresist pattern.
摘要翻译：在半导体器件中形成图案的方法包括：在衬底上形成导电膜; 在导电膜上形成抗反射层; 使用第一清洁溶液清洁抗反射层上的氧化物残留物; 使用第二清洁溶液清洁抗反射层上的氧化物残留物; 在抗反射层上形成光刻胶图形; 以及使用光致抗蚀剂图案来图案化导电膜。

9. 发明授权

US06658686B1 Rotary disc toothbrush 失效
标题翻译：旋转盘牙刷
公开(公告)号：US06658686B1
公开(公告)日：2003-12-09
申请号：US10339841
申请日：2003-01-10
申请人： Soo-Woong Lee
发明人： Soo-Woong Lee
IPC分类号： A46B904
CPC分类号： A46B7/08 , A46B2200/1066
摘要： A toothbrush design which more effectively permits bristle penetration into the spaces between tooth and gum for removal of plaque and food debris lodged within these spaces. The toothbrush design incorporates a rotatable brush disc having a plurality of radially outward extending bristles but where the width of the bristle disc and number of bristles are preferably limited so that the bristle tips can penetrate into the space between tooth and gum and preferably be of sufficient length to penetrate to the bottom of the space.
摘要翻译：牙刷设计更有效地允许刷毛渗透到牙齿和牙龈之间的空间中以去除在这些空间内的斑块和食物碎屑。牙刷设计包括具有多个径向向外延伸的刷毛的可旋转刷盘，但是其中刷毛盘的宽度和刷毛数量优选地被限制，使得刷毛尖端可以渗透到牙齿和牙龈之间的空间中，并且优选地足够长度穿透到空间的底部。

10. 发明申请

US20150036435A1 NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件，包括其的存储器系统以及操作非易失性存储器件的方法
公开(公告)号：US20150036435A1
公开(公告)日：2015-02-05
申请号：US14518176
申请日：2014-10-20
申请人： Sangchul Kang , Seokcheon Kwon , Soo-Woong Lee
发明人： Sangchul Kang , Seokcheon Kwon , Soo-Woong Lee
IPC分类号： G11C16/30
CPC分类号： G11C16/30 , G11C11/5628 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/3436
摘要： A non-volatile memory device includes a non-volatile memory cell array including a plurality of word lines, a voltage generator configured to generate a first high-voltage using a supply voltage and a second high-voltage using an external voltage which is higher than the supply voltage, and a word line selection circuit configured. The word line selection circuit is configured apply, during a program operation of the memory cell array, the first high-voltage to a selected word line among the plurality of word lines, and the second high-voltage to unselected word lines among the plurality of word lines
摘要翻译：一种非易失性存储器件包括包括多个字线的非易失性存储单元阵列，电压发生器，其被配置为使用高于该电压的外部电压产生使用电源电压的第一高电压和第二高电压，电源电压和配置的字线选择电路。字线选择电路被配置为在存储单元阵列的编程操作期间将第一高电压施加到多个字线中的选定字线，并且多个字线中的第二高电压至未选字线字线

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