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    • 1. 发明申请
    • VACUUM CHANNEL TRANSISTOR AND MANUFACTURING METHOD THEREOF
    • 真空通道晶体管及其制造方法
    • US20090140626A1
    • 2009-06-04
    • US12241182
    • 2008-09-30
    • Dae Yong KIMHyun Tak KIM
    • Dae Yong KIMHyun Tak KIM
    • H01J1/15H01J9/04
    • H01J21/10
    • Disclosed are a vacuum channel transistor including a planar cathode layer formed of a material having a low work function or a planar cathode layer including a heat resistant layer formed of a material having a low work function, and a manufacturing method of the same. In the vacuum channel transistor, electrons can be emitted even when a low voltage is applied to a gate layer, a voltage of an anode layer has a small influence on electron emission of a cathode layer, and instability of emission current is obviated. Accordingly, high efficiency and a long lifespan can be achieved, and thus operational stability is secured.
    • 公开了一种真空沟道晶体管及其制造方法,该真空沟道晶体管包括由具有低功函数的材料形成的平面阴极层或包括由具有低功函数的材料形成的耐热层的平面阴极层。 在真空通道晶体管中,即使当向栅极层施加低电压时,也可以发射电子,阳极层的电压对阴极层的电子发射影响较小,并且消除了发射电流的不稳定性。 因此,可以实现高效率和长寿命,从而确保操作稳定性。
    • 2. 发明申请
    • VACUUM CHANNEL TRANSISTOR AND DIODE EMITTING THERMAL CATHODE ELECTRONS, AND METHOD OF MANUFACTURING THE VACUUM CHANNEL TRANSISTOR
    • 真空通道晶体管和二极管发射热阴极电子,以及制造真空通道晶体管的方法
    • US20100102325A1
    • 2010-04-29
    • US12606317
    • 2009-10-27
    • Dae Yong KIMHyun Tak Kim
    • Dae Yong KIMHyun Tak Kim
    • H01L29/78H01L29/04H01L21/336
    • H01J21/10
    • Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the vacuum channel transistor. The vacuum channel transistor includes: a motherboard; a micro heater member having a thin-film structure formed on the motherboard; a cathode member having a thin-film structure spaced apart from a center part of the micro heater member by a first interval and formed on the micro heater member; a gate member formed on both outer walls of upper parts of the cathode member; and an anode member spaced apart from the cathode member by a second interval through spacers disposed on the gate member, wherein a vacuum electron passing area is interposed between the cathode member and the anode member by the second interval.
    • 提供了晶体管和制造晶体管的方法,更具体地,是发射热阴极电子的真空沟道晶体管和制造真空沟道晶体管的方法。 真空通道晶体管包括:主板; 具有形成在母板上的薄膜结构的微加热器构件; 阴极构件,其具有薄膜结构,所述薄膜结构与所述微加热器构件的中心部分间隔开并形成在所述微加热器构件上; 形成在所述阴极部件的上部的两个外壁上的闸板部件; 以及阳极部件,其间隔设置在所述栅极部件上的间隔隔开所述阴极部件的第二间隔,其中,所述阴极部件与所述阳极部件之间以第二间隔插入真空电子通过区域。
    • 5. 发明申请
    • DEVICE AND METHOD FOR PROVIDING SHORTCUT IN A LOCKED SCREEN
    • 用于在锁定屏幕中提供短路的设备和方法
    • US20130067376A1
    • 2013-03-14
    • US13604546
    • 2012-09-05
    • Dae Yong KIMJae Mong KIM
    • Dae Yong KIMJae Mong KIM
    • G06F3/033G06F3/048
    • G06F3/0488G06F21/36
    • A method for executing an operation on a portable terminal in a locked state includes displaying a lockscreen on the portable terminal including state information of the portable terminal; receiving an input on the lockscreen; determining whether the input corresponds to an operation of an application with respect to the displayed state information; and executing the operation according to the determination. A portable terminal includes an interface unit to output a lockscreen when the portable terminal is in a locked state and to display state information on the lockscreen; an input unit to receive an input; a verification unit to determine whether the input corresponds to an operation of an application with respect to the determined state information; and an execution unit to execute the predetermine operation.
    • 一种在锁定状态下对便携式终端执行操作的方法包括在便携式终端上显示包含便携式终端的状态信息的锁屏; 在锁屏上接收输入; 确定所述输入是否对应于应用对于所显示的状态信息的操作; 并根据确定执行该操作。 便携式终端包括当便携式终端处于锁定状态时输出锁定屏幕并在锁屏上显示状态信息的接口单元; 用于接收输入的输入单元; 验证单元,用于确定所述输入是否对应于所述确定的状态信息的应用的操作; 以及执行单元,用于执行预定操作。