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1. 发明授权

US08710545B2 Latch-up free ESD protection 有权
标题翻译：免维护ESD保护
公开(公告)号：US08710545B2
公开(公告)日：2014-04-29
申请号：US13533959
申请日：2012-06-26
申请人： Da-Wei Lai , Handoko Linewih
发明人： Da-Wei Lai , Handoko Linewih
IPC分类号： H01L29/74
CPC分类号： H01L27/0262 , H01L29/7436
摘要： An ESD module having a first portion (FP) and a second portion (SP) in a substrate is presented. The FP includes a FP well of a second polarity type and first and second FP contact regions. The first FP contact region is of a first polarity type and the second FP contact region is of a second polarity type. The SP includes a SP well of a first polarity type and first and second SP contact regions. The first SP contact region is of a first polarity type and the second SP contact region is of a second polarity type. An intermediate portion (IP) is disposed in the substrate between the FP and SP in the substrate. The IP includes a well of the second polarity type. The IP increases trigger current and holding voltage of the module to prevent latch up during normal device operation.
摘要翻译：提出了一种在衬底中具有第一部分（FP）和第二部分（SP）的ESD模块。 FP包括第二极性类型的FP阱和第一和第二FP接触区域。第一FP接触区域是第一极性类型，第二FP接触区域是第二极性类型。 SP包括第一极性类型和第一和第二SP接触区域的SP阱。第一SP接触区域是第一极性类型，第二SP接触区域是第二极性类型。在衬底中的FP和SP之间的衬底中设置中间部分（IP）。 IP包括第二极性类型的阱。 IP增加模块的触发电流和保持电压，以防止在正常设备操作期间锁定。

2. 发明授权

US08913359B2 Latch-up free RC-based NMOS ESD power clamp in HV use 有权
标题翻译：高压使用中的无闩锁RC型NMOS ESD功率钳
公开(公告)号：US08913359B2
公开(公告)日：2014-12-16
申请号：US13710700
申请日：2012-12-11
申请人： Da-Wei Lai , Ying-Chang Lin , Handoko Linewih
发明人： Da-Wei Lai , Ying-Chang Lin , Handoko Linewih
IPC分类号： H02H3/22 , H02H9/04
CPC分类号： H02H9/044 , H01L27/0274 , H01L27/0277 , H02H9/046
摘要： An RC-based electrostatic discharge protection device provides an extended snapback trigger voltage range, thereby avoiding latch-up. Two parallel current discharge paths are provided between supply terminals during an electrostatic discharge event by virtue of an added external resistor. The first current discharge path includes body resistance of the protection device and the second current discharge path includes the external resistor.
摘要翻译：基于RC的静电放电保护装置提供扩展的快速恢复触发电压范围，从而避免闩锁。在静电放电事件期间，通过附加的外部电阻器，在电源端子之间提供两个并联电流放电路径。第一电流放电路径包括保护装置的体电阻，第二电流放电路径包括外部电阻器。

3. 发明授权

US08891215B2 High noise immunity with latch-up free ESD clamp 有权
标题翻译：高抗噪声，具有无闩锁的ESD钳位
公开(公告)号：US08891215B2
公开(公告)日：2014-11-18
申请号：US13711141
申请日：2012-12-11
申请人： Da-Wei Lai , Handoko Linewih , Ying-Chang Lin
发明人： Da-Wei Lai , Handoko Linewih , Ying-Chang Lin
IPC分类号： H02H9/00 , H02H9/04 , H01C7/12 , H02H1/00 , H02H1/04 , H02H3/22
CPC分类号： H02H9/04 , H01L27/0274 , H01L27/0285 , H02H9/043 , H02H9/046 , Y10T29/49117
摘要： A triple stack NMOS integrated circuit structure protection circuit for a plurality of terminals operative at respective voltage levels is coupled between the plurality of terminals. First and second NMOS elements of the triple stack NMOS share a common active region. A third NMOS element, vertically positioned with respect to the first and second NMOS elements, has an active region separate from the active region of the first and second NMOS elements. The first, second and third NMOS elements are connected in series between two terminals of the plurality of terminals.
摘要翻译：用于在各个电压电平下工作的多个终端的三重堆叠的NMOS集成电路结构保护电路耦合在多个终端之间。三重堆叠NMOS的第一和第二NMOS元件共享公共有源区。相对于第一和第二NMOS元件垂直定位的第三NMOS元件具有与第一和第二NMOS元件的有源区分离的有源区。第一，第二和第三NMOS元件串联连接在多个端子的两个端子之间。

4. 发明授权

US08913358B2 Latch-up immune ESD protection 有权
标题翻译：锁定免疫ESD保护
公开(公告)号：US08913358B2
公开(公告)日：2014-12-16
申请号：US13535314
申请日：2012-06-27
申请人： Da-Wei Lai , Mahadeva Iyer Natarajan
发明人： Da-Wei Lai , Mahadeva Iyer Natarajan
IPC分类号： H02H9/00
CPC分类号： H01L27/0262
摘要： An ESD module is presented. The ESD module includes an ESD circuit and a latch-up (LU) control circuit. The ESD circuit has a pad terminal and a low power source terminal. The LU control circuit includes a first LU terminal coupled to a high power source and an LU output terminal coupled to the ESD circuit. The ESD module has first and second operating modes. In the first operating mode, the LU control circuit is deactivated and the ESD circuit has a first triggering current It1 which is less than 100 mA. In the second operating mode, the LU control circuit is activated and the ESD circuit has a second triggering current It2 which is greater than 100 mA.
摘要翻译：介绍了ESD模块。 ESD模块包括ESD电路和闭锁（LU）控制电路。 ESD电路具有焊盘端子和低电源端子。 LU控制电路包括耦合到高电源的第一LU端子和耦合到ESD电路的LU输出端子。 ESD模块具有第一和第二操作模式。在第一种工作模式下，LU控制电路被停用，ESD电路具有小于100mA的第一触发电流It1。在第二种工作模式下，LU控制电路被激活，ESD电路具有大于100mA的第二触发电流It2。

5. 发明授权

US08879221B2 ESD protection without latch-up 有权
标题翻译： ESD保护无闩锁
公开(公告)号：US08879221B2
公开(公告)日：2014-11-04
申请号：US13406537
申请日：2012-02-28
申请人： Da-Wei Lai , Mahadeva Iyer Natarajan , Manjunatha Govinda Prabhu , Ryan Shan
发明人： Da-Wei Lai , Mahadeva Iyer Natarajan , Manjunatha Govinda Prabhu , Ryan Shan
IPC分类号： H02H9/04 , H02H3/20
CPC分类号： H02H9/046 , Y10T29/49117
摘要： A device having an ESD module is disclosed. The ESD module includes an ESD circuit coupled between first and second rails and a control circuit coupled between the rails and to the ESD circuit. When the control circuit senses an ESD event, it causes the ESD circuit to create a current path between the rails to dissipate ESD current. When no ESD event is sensed, the control circuit ensures that no current path is created between the rails to prevent latch-up.
摘要翻译：公开了具有ESD模块的装置。 ESD模块包括耦合在第一和第二导轨之间的ESD电路和耦合在轨道和ESD电路之间的控制电路。当控制电路感测到ESD事件时，会使ESD电路在轨道之间产生电流路径，以消耗ESD电流。当没有感测到ESD事件时，控制电路确保在轨道之间不产生电流路径以防止闩锁。

6. 发明授权

US08724271B2 ESD-robust I/O driver circuits 有权
标题翻译： ESD稳健的I / O驱动电路
公开(公告)号：US08724271B2
公开(公告)日：2014-05-13
申请号：US13415178
申请日：2012-03-08
申请人： Da-Wei Lai , Ying-Chang Lin , Mahadeva Iyer Natarajan
发明人： Da-Wei Lai , Ying-Chang Lin , Mahadeva Iyer Natarajan
IPC分类号： H02H3/22
CPC分类号： H02H9/046
摘要： An ESD-robust I/O driver circuit is disclosed. Embodiments include providing a first NMOS transistor having a first source, a first drain, and a first gate; coupling the first source to a ground rail and the first drain to an I/O pad; coupling a gate driver control circuit to the first drain and the first gate; and providing a ground potential to the first gate, via the gate driver control circuit, during an ESD event occurring from the I/O pad to the ground rail.
摘要翻译：公开了一种ESD稳健的I / O驱动器电路。实施例包括提供具有第一源极，第一漏极和第一栅极的第一NMOS晶体管; 将第一源耦合到接地导轨，将第一漏极耦合到I / O焊盘; 将栅极驱动器控制电路耦合到所述第一漏极和所述第一栅极; 以及在从I / O焊盘发生到地轨的ESD事件期间，经由栅极驱动器控制电路向第一栅极提供接地电位。

7. 发明授权

US08797698B2 Electrostatic discharge (ESD) protection and operating method thereof 有权
标题翻译：静电放电（ESD）保护及其操作方法
公开(公告)号：US08797698B2
公开(公告)日：2014-08-05
申请号：US13770544
申请日：2013-02-19
申请人： Da-Wei Lai , Wade Ma
发明人： Da-Wei Lai , Wade Ma
IPC分类号： H02H9/00
CPC分类号： H02H9/046
摘要： An electrostatic discharge (ESD) protection circuit includes a clamp transistor, and inverter, a resistance-capacitance (RC) circuit, and a current mirror. The clamp transistor is coupled between a first supply node and a second supply node. The inverter has an input end and an output end, and the output end of the inverter is coupled with a gate of the clamp transistor. The RC circuit is coupled to the first supply node. The current mirror includes a first transistor and a second transistor. The first transistor is coupled between the input end of the inverter and the second supply node, and the second transistor is coupled between the RC circuit and the second supply node.
摘要翻译：静电放电（ESD）保护电路包括钳位晶体管，反相器，电阻电容（RC）电路和电流镜。钳位晶体管耦合在第一电源节点和第二电源节点之间。逆变器具有输入端和输出端，反相器的输出端与钳位晶体管的栅极耦合。 RC电路耦合到第一电源节点。电流镜包括第一晶体管和第二晶体管。第一晶体管耦合在反相器的输入端和第二电源节点之间，第二晶体管耦合在RC电路和第二电源节点之间。

8. 发明授权

US08767360B2 ESD protection device for circuits with multiple power domains 有权
标题翻译：具有多个电源域的电路的ESD保护装置
公开(公告)号：US08767360B2
公开(公告)日：2014-07-01
申请号：US13482413
申请日：2012-05-29
申请人： Ying-Chang Lin , Da-Wei Lai
发明人： Ying-Chang Lin , Da-Wei Lai
IPC分类号： H02H9/00
CPC分类号： H02H9/046 , H01L2924/0002 , Y10T29/49117 , H01L2924/00
摘要： A ESD protection scheme is disclosed for circuits with multiple power domains. Embodiments include: coupling a first power clamp to a first power rail and a first ground rail of a first domain; coupling a second power clamp to a second power rail and a second ground rail of a second domain; providing a blocking circuit for blocking current from an ESD event; providing an I/O interface connection in the first domain for transmitting signals from the first domain to the blocking circuit; providing a core interface connection in the second domain for transmitting signals from the blocking circuit to the second domain; coupling an input connection of the blocking circuit to the I/O interface connection; and coupling an output connection of the blocking circuit to a core interface connection.
摘要翻译：公开了具有多个电源域的电路的ESD保护方案。实施例包括：将第一电源钳连接到第一电源轨和第一磁畴的第一接地轨; 将第二电力钳耦合到第二电力轨道和第二区域的第二接地轨道; 提供阻塞来自ESD事件的电流的阻塞电路; 在第一域中提供I / O接口连接，用于将信号从第一域传输到阻塞电路; 在第二域中提供核心接口连接，用于将信号从阻塞电路传输到第二域; 将阻塞电路的输入连接耦合到I / O接口连接; 并将阻塞电路的输出连接耦合到核心接口连接。

9. 发明申请

US20130321962A1 ESD-ROBUST I/O DRIVER CIRCUITS 有权
标题翻译： ESD-ROBUST I / O驱动电路
公开(公告)号：US20130321962A1
公开(公告)日：2013-12-05
申请号：US13482423
申请日：2012-05-29
申请人： Da-Wei Lai , Ying-Chang Lin
发明人： Da-Wei Lai , Ying-Chang Lin
IPC分类号： H02H9/04 , H01L21/60
CPC分类号： H01L27/0292 , H01L2924/0002 , H02H9/046 , H01L2924/00
摘要： An ESD-robust I/O driver circuit is disclosed. Embodiments include providing a first NMOS transistor having a first source, a first drain, and a first gate; coupling the first source is coupled to a ground rail, and the first drain to an I/O pad; providing a gate driver control circuit including a second NMOS transistor having a second source, a second drain, and a second gate; and coupling the second drain to the first gate, the second source to the ground rail, wherein the gate driver control circuit provides a ground potential to the first gate during an ESD event occurring from the I/O pad to the ground rail.
摘要翻译：公开了一种ESD稳健的I / O驱动器电路。实施例包括提供具有第一源极，第一漏极和第一栅极的第一NMOS晶体管; 耦合第一源耦合到接地导轨，并且第一漏极耦合到I / O焊盘; 提供包括具有第二源极，第二漏极和第二栅极的第二NMOS晶体管的栅极驱动器控制电路; 以及将所述第二漏极耦合到所述第一栅极，所述第二源极耦合到所述接地导轨，其中所述栅极驱动器控制电路在从所述I / O焊盘发生到所述接地导轨的ESD事件期间向所述第一栅极提供接地电位。

10. 发明申请

US20130321961A1 ESD PROTECTION DEVICE FOR CIRCUITS WITH MULTIPLE POWER DOMAINS 有权
标题翻译：具有多个电源域的电路的ESD保护装置
公开(公告)号：US20130321961A1
公开(公告)日：2013-12-05
申请号：US13482413
申请日：2012-05-29
申请人： Ying-Chang Lin , Da-Wei Lai
发明人： Ying-Chang Lin , Da-Wei Lai
IPC分类号： H02H9/04 , H05K13/00
CPC分类号： H02H9/046 , H01L2924/0002 , Y10T29/49117 , H01L2924/00
摘要： A ESD protection scheme is disclosed for circuits with multiple power domains. Embodiments include: coupling a first power clamp to a first power rail and a first ground rail of a first domain; coupling a second power clamp to a second power rail and a second ground rail of a second domain; providing a blocking circuit for blocking current from an ESD event; providing an I/O interface connection in the first domain for transmitting signals from the first domain to the blocking circuit; providing a core interface connection in the second domain for transmitting signals from the blocking circuit to the second domain; coupling an input connection of the blocking circuit to the I/O interface connection; and coupling an output connection of the blocking circuit to a core interface connection.
摘要翻译：公开了具有多个电源域的电路的ESD保护方案。实施例包括：将第一电源钳连接到第一电源轨和第一磁畴的第一接地轨; 将第二电力钳耦合到第二电力轨道和第二区域的第二接地轨道; 提供阻塞来自ESD事件的电流的阻塞电路; 在第一域中提供I / O接口连接，用于将信号从第一域传输到阻塞电路; 在第二域中提供核心接口连接，用于将信号从阻塞电路传输到第二域; 将阻塞电路的输入连接耦合到I / O接口连接; 并将阻塞电路的输出连接耦合到核心接口连接。

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