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1. 发明申请

US20230040765A1 ULTRAVIOLET LIGHT RECEIVING DEVICE 有权
公开(公告)号：US20230040765A1
公开(公告)日：2023-02-09
申请号：US17759040
申请日：2021-01-15
申请人： DOWA HOLDINGS Co., Ltd. , DOWA Electronics Materials Co., Ltd.
发明人： Ryuichi TOBA , Yasuhiro WATANABE
IPC分类号： H01L31/108 , H01L31/0304 , H01L31/0224
摘要： Provided is an ultraviolet light receiving device having photosensitivity effective to target wavelengths in the ultraviolet region. A Schottky junction ultraviolet light receiving device has the photosensitivity peak wavelength in an ultraviolet region of 230 nm or more and 320 nm or less, and exhibits a rejection ratio of 105 or more, the rejection ratio being the ratio of the responsivity Rp to the peak photosensitivity wavelength to the average of the responsivity Rv to a visible region of 400 nm or more and 680 nm or less (Rp/Rv).

2. 发明申请

US20200287087A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20200287087A1
公开(公告)日：2020-09-10
申请号：US16497564
申请日：2018-03-23
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Yasuhiro WATANABE
IPC分类号： H01L33/32 , H01L33/14 , H01L33/40 , H01L33/00 , H01L33/12 , H01L33/06
摘要： Provided are a group III nitride semiconductor light emitting element and a method of manufacturing the same. A group III nitride semiconductor light emitting element of the present disclosure comprises in this order, in a substrate, an n-type semiconductor layer, a light emitting layer, a p-type electron blocking layer, a p-type contact layer made of AlxGa1-xN, and a p-side reflection electrode, wherein a center emission wavelength of light emitted from the light emitting layer is 270 nm or greater and 330 nm or smaller, the p-type contact layer is in contact with the p-side reflection electrode, and has a thickness of 20 nm or greater and 80 nm or smaller, and the Al composition ratio x of the p-type contact layer satisfies the following Formula: 2.09−0.006×λp≤x≤2.25−0.006×λp where λp is the center emission wavelength in nanometer.

3. 发明申请

US20190006558A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME 审中-公开
公开(公告)号：US20190006558A1
公开(公告)日：2019-01-03
申请号：US15748620
申请日：2016-06-22
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Yasuhiro WATANABE , Takehiko FUJITA
IPC分类号： H01L33/32 , H01L33/06 , H01L33/14 , H01L33/36 , H01L33/00
CPC分类号： H01L33/325 , H01L33/0075 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/36
摘要： A group III nitride semiconductor light-emitting element having longer element life than conventional group III nitride semiconductor light-emitting elements and a method of manufacturing the same are provided. A group III nitride semiconductor light-emitting element 100 comprises, in the following order: an n-type group III nitride semiconductor layer 30; a group III nitride semiconductor laminated body 40 obtained by alternately laminating a barrier layer 40a and a well layer 40b narrower in bandgap than the barrier layer 40a in the stated order so that the number of barrier layers 40a and the number of well layers 40b are both N, where N is an integer; an AlN guide layer 60; and a p-type group III nitride semiconductor layer 70, wherein the AlN guide layer 60 has a thickness of 0.5 nm or more and 2.0 nm or less.

4. 发明申请

US20210193874A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME 有权
公开(公告)号：US20210193874A1
公开(公告)日：2021-06-24
申请号：US17176181
申请日：2021-02-16
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Yasuhiro WATANABE , Takehiko FUJITA
IPC分类号： H01L33/32 , H01L33/06 , H01L33/14 , H01L33/00 , H01L33/36
摘要： A group III nitride semiconductor light-emitting element comprises, in the following order: an n-type group III nitride semiconductor layer; a group III nitride semiconductor laminated body obtained by alternately laminating a barrier layer and a well layer narrower in bandgap than the barrier layer in the stated order so that the number of barrier layers and the number of well layers are both N, where N is an integer; an AlN guide layer; and a p-type group III nitride semiconductor layer. The AlN guide layer has a thickness of 0.7 nm or more and 1.7 nm or less. A final barrier layer wider in bandgap than the well layer and narrower in bandgap than the AlN guide layer is provided between an Nth well layer in the group III nitride semiconductor laminated body and the AlN guide layer.

5. 发明申请

US20200235260A1 DEEP ULTRAVIOLET LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING SAME 审中-公开
公开(公告)号：US20200235260A1
公开(公告)日：2020-07-23
申请号：US16651352
申请日：2018-09-28
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Yasuhiro WATANABE
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00 , H01L33/14
摘要： Disclosed is a deep ultraviolet light-emitting device which includes on a substrate 10 in order: an n-type semiconductor layer 30, a light-emitting layer 40, a p-type electron block layer 60, and a p-type contact layer 70, wherein the p-type contact layer 70 comprises a superlattice structure having an alternating stack of: a first layer 71 made of AlxGa1-xN having an Al composition ratio x higher than an Al composition ratio w0 of a layer configured to emit deep ultraviolet light in the light-emitting layer; and a second layer 72 made of AlyGa1-yN having an Al composition ratio y lower than the Al composition ratio x, and the Al composition ratio w0, the Al composition ratio x, the Al composition ratio y, and a thickness average Al composition ratio z of the p-type contact layer satisfy the formula [1] 0.030

6. 发明申请

US20190081203A1 METHOD OF PRODUCING III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20190081203A1
公开(公告)日：2019-03-14
申请号：US16188293
申请日：2018-11-13
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Takehiko FUJITA , Yasuhiro WATANABE
IPC分类号： H01L33/00 , C23C16/34 , H01L21/02 , H01L33/06 , H01L33/14 , H01L33/30 , H01L33/32 , H01S5/343
摘要： Provided is a method of producing a III nitride semiconductor light-emitting device having an n-type semiconductor layer, a light emitting layer, a barrier layer, and a p-type semiconductor layer. The p-type semiconductor layer is formed by forming an electron blocking layer on the light emitting layer; supplying a carrier gas containing nitrogen to a surface of the electron blocking layer; and forming a second p-type contact layer made of AlyGa1-yN on the electron blocking layer after the nitrogen carrier gas supply step. The second p-type contact formation step is performed using a carrier gas containing hydrogen. Source gases of Al and Ga are supplied to form a first p-type contact layer made of AlxGa1-xN with a thickness of more than 0 nm and 30 nm or less directly on the electron blocking layer and directly under the second p-type contact layer.

7. 发明申请

US20180166604A1 METHOD OF PRODUCING III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20180166604A1
公开(公告)日：2018-06-14
申请号：US15533482
申请日：2015-12-08
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Takehiko FUJITA , Yasuhiro WATANABE
IPC分类号： H01L33/00
CPC分类号： H01L33/005 , B82Y40/00 , C23C16/34 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/00 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/14 , H01L33/30 , H01L33/32 , H01S5/343
摘要： We propose a method of producing a III nitride semiconductor light-emitting device 1 having a p-type semiconductor layer 150 in this order, wherein the p-type semiconductor layer 150 is formed by the steps comprising: an electron blocking layer formation step for forming an electron blocking layer 51 having an Al content higher than that of the barrier layer 42, on the light emitting layer 40; a nitrogen carrier gas supply step for supplying at least a carrier gas containing nitrogen as a main component to a surface of the electron blocking layer 51; and a second p-type contact formation step for forming a second p-type contact layer 55 made of AlyGa1-yN on the electron blocking layer 51 after the nitrogen carrier gas supply step, and wherein the second p-type contact formation step is performed using a carrier gas containing hydrogen as a main component.

8. 发明申请

US20180019375A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF PRODUCING THE SAME 审中-公开
公开(公告)号：US20180019375A1
公开(公告)日：2018-01-18
申请号：US15547866
申请日：2016-02-03
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Takehiko FUJITA , Yasuhiro WATANABE
IPC分类号： H01L33/14 , H01L33/00 , H01L33/06 , H01L33/32
CPC分类号： H01L33/145 , H01L33/007 , H01L33/06 , H01L33/32 , H01L33/325
摘要： Provided is a III-nitride semiconductor light-emitting device having excellent device lifetime as compared with conventional devices and a method of producing the same. A III-nitride semiconductor light-emitting device 100 has an n-type semiconductor layer 30, a light emitting layer 40 containing at least Al, an electron blocking layer 50, and a p-type semiconductor layer 60 in this order. The light emitting layer 40 has a quantum well structure having well layers 41 and barrier layers 42. The electron blocking layer 50 is adjacent to the light emitting layer 40 and is formed from a layer having an Al content higher than that of the barrier layers 42 and the p-type semiconductor layer 60. The electron blocking layer 50 has a Si-based doped region layer 50a.

9. 发明申请

US20160268477A1 III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译： III型氮化物半导体发光器件及其制造方法
公开(公告)号：US20160268477A1
公开(公告)日：2016-09-15
申请号：US15066234
申请日：2016-03-10
申请人： DOWA ELECTRONICS MATERIALS CO., LTD.
发明人： Takehiko FUJITA , Yasuhiro WATANABE
IPC分类号： H01L33/32 , H01L33/00 , H01L33/14
CPC分类号： H01L33/32 , H01L33/007 , H01L33/145
摘要： A long-life III nitride semiconductor light emitting device and a method of producing the same. A III nitride semiconductor light-emitting device includes an n-type semiconductor layer; a light emitting layer containing at least Al; and a p-type semiconductor layer obtained by sequentially stacking an electron blocking layer, a p-type cladding layer, and a p-type contact layer, in this order. The electron blocking layer is made of AlxGa1-xN (0.55≦x≦1.0), the p-type contact layer is made of AlyGa1-yN (0≦y≦0.1), the p-type cladding layer is made of AlzGa1-zN having an Al content z which gradually decreases over the whole thickness of the p-type cladding layer from the electron blocking layer side toward the p-type contact layer side, and the reduction rate of the Al content z of the p-type cladding layer in the thickness direction is 0.01/nm or more and 0.025/nm or less.
摘要翻译：一种长寿命III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光器件包括n型半导体层; 至少含有Al的发光层; 以及依次层叠电子阻挡层，p型覆层，p型接触层而得到的p型半导体层。电子阻挡层由Al x Ga 1-x N（0.55≤x≤1.0）构成，p型接触层由Al y Ga 1-y N（0≤y≤0.1）构成，p型覆层由AlzGa1-zN 具有从p型包覆层的整个厚度从电子阻挡层侧朝向p型接触层侧逐渐减小的Al含量z，并且p型覆层的Al含量z的还原率厚度方向为0.01nm以上且0.025nm以下。

10. 发明申请

US20200006599A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME 审中-公开
公开(公告)号：US20200006599A1
公开(公告)日：2020-01-02
申请号：US16568716
申请日：2019-09-12
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Yasuhiro WATANABE , Takehiko FUJITA
IPC分类号： H01L33/32 , H01L33/06 , H01L33/14 , H01L33/00 , H01L33/36
摘要： A group III nitride semiconductor light-emitting element comprises, in the following order: an n-type group III nitride semiconductor layer; a group III nitride semiconductor laminated body obtained by alternately laminating a barrier layer and a well layer narrower in bandgap than the barrier layer in the stated order so that the number of barrier layers and the number of well layers are both N, where N is an integer; an AlN guide layer; and a p-type group III nitride semiconductor layer. The AlN guide layer has a thickness of 0.7 nm or more and 1.7 nm or less. An Nth well layer in the group III nitride semiconductor laminated body and the AlN guide layer are in contact with each other, or a final barrier layer is further provided between the Nth well layer and the AlN guide layer.

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