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1. 发明申请

US20150131375A1 METHOD OF DRIVING NONVOLATILE MEMORY DEVICES 有权
标题翻译：驱动非易失性存储器件的方法
公开(公告)号：US20150131375A1
公开(公告)日：2015-05-14
申请号：US14446351
申请日：2014-07-30
申请人： DONG-HUN KWAK , KI-TAE PARK
发明人： DONG-HUN KWAK , KI-TAE PARK
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/3404
摘要： A method of driving a nonvolatile memory device, includes; forward shifting threshold voltages of nonvolatile memory cells by executing a first program loop with respect to the nonvolatile memory cells, and thereafter, reverse shifting the threshold voltages of the nonvolatile memory cells, and again forward shifting the threshold voltages of the nonvolatile memory cells by executing a second program loop with respect to the nonvolatile memory cells.
摘要翻译：一种驱动非易失性存储装置的方法，包括：通过相对于非易失性存储单元执行第一程序循环，非易失性存储单元的正向移位阈值电压，然后反向移位非易失性存储单元的阈值电压，并且再次通过执行非易失性存储单元的阈值电压相对于非易失性存储单元的第二程序循环。

2. 发明申请

US20140104955A1 PROGRAMMING NONVOLATILE MEMORY DEVICE USING PROGRAM VOLTAGE WITH VARIABLE OFFSET 有权
标题翻译：使用可变偏置的程序电压编程非易失性存储器件
公开(公告)号：US20140104955A1
公开(公告)日：2014-04-17
申请号：US13969651
申请日：2013-08-19
申请人： DONG-HUN KWAK , HYUN-WOOK PARK , HYUN JUN YOON , DOOHYUN KIM , KI-TAE PARK
发明人： DONG-HUN KWAK , HYUN-WOOK PARK , HYUN JUN YOON , DOOHYUN KIM , KI-TAE PARK
IPC分类号： G11C16/12
CPC分类号： G11C16/28 , G11C11/5628 , G11C16/00 , G11C16/0483 , G11C16/10 , G11C16/12 , G11C16/3454 , G11C16/3459 , G11C29/021 , G11C29/028 , G11C2029/0409 , H01L27/11556 , H01L27/1157 , H01L27/11582
摘要： A method of programming a nonvolatile memory device comprises applying at least one test program pulse to selected memory cells located in a scan read area, performing a scan read operation on the selected memory cells following application of the at least one test program pulse to detect at least one one-shot upper cell, calculating an offset voltage corresponding to a scan read region at which the scan read operation is performed, setting a program start bias using the offset voltage, and executing at least one program loop using the program start bias.
摘要翻译：一种对非易失性存储器件进行编程的方法包括将至少一个测试程序脉冲施加到位于扫描读取区域中的选定存储器单元，在施加至少一个测试程序脉冲之后对所选存储单元执行扫描读取操作，以在计算对应于执行扫描读取操作的扫描读取区域的偏移电压，使用偏移电压设置程序开始偏置，以及使用程序启动偏差执行至少一个程序循环。

3. 发明申请

US20130088928A1 MEMORY SYSTEM COMPRISING NON-VOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION 有权
标题翻译：包含非易失性存储器件的存储器系统及其相关操作方法
公开(公告)号：US20130088928A1
公开(公告)日：2013-04-11
申请号：US13547441
申请日：2012-07-12
申请人： DONG-HUN KWAK
发明人： DONG-HUN KWAK
IPC分类号： G11C7/00 , G11C7/10
CPC分类号： G11C11/5642 , G11C7/10 , G11C11/5628 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/26 , G11C16/34 , G11C2211/5641 , G11C2211/5646
摘要： A nonvolatile memory device comprises a first memory region and a second memory region. The nonvolatile memory device is programmed by storing program data in the first memory region, performing coarse programming and fine programming to store the program data in the second memory region, and in response to a read request, accessing the program data from the first memory region or the second memory region according to a fine program flag indicating whether the coarse programming has been completed.
摘要翻译：非易失性存储器件包括第一存储区和第二存储区。通过将程序数据存储在第一存储器区域中，执行粗略编程和精细编程以将程序数据存储在第二存储器区域中，并且响应于读取请求，从第一存储器区域访问程序数据来编程非易失性存储器件或第二存储器区域，该精细程序标志指示粗略编程是否已经完成。

4. 发明申请

US20130100737A1 NONVOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION 有权
标题翻译：非易失性存储器件及其相关操作方法
公开(公告)号：US20130100737A1
公开(公告)日：2013-04-25
申请号：US13540951
申请日：2012-07-03
申请人： DONG-HUN KWAK
发明人： DONG-HUN KWAK
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3459 , H01L27/1157 , H01L27/11582
摘要： A nonvolatile memory comprises a memory block having memory cells stacked in a three dimensional structure. The nonvolatile memory device performs an erase operation to erase a selected sub block among sub blocks of the memory block, a verification operation to determine whether program states of memory cells of an unselected sub block of the memory block have changed as a consequence of the erase operation, and a reprogramming operation to reprogram at least a portion of the unselected sub block upon determining that at least one of the program states have changed as a consequence of the erase operation.
摘要翻译：非易失性存储器包括具有以三维结构堆叠的存储单元的存储块。非易失性存储器件执行擦除操作以擦除存储块的子块之间的所选择的子块，验证操作以确定存储块的未选择的子块的存储器单元的编程状态是否已经被擦除的结果而改变操作和重新编程操作，以便在确定至少一个编程状态由于擦除操作而改变时，对未选择的子块的至少一部分进行重新编程。

5. 发明申请

US20130107653A1 NONVOLATILE MEMORY HAVING STACKED STRUCTURE AND RELATED METHOD OF OPERATION 有权
标题翻译：具有堆叠结构的非易失性存储器及其相关操作方法
公开(公告)号：US20130107653A1
公开(公告)日：2013-05-02
申请号：US13600327
申请日：2012-08-31
申请人： DONG-HUN KWAK
发明人： DONG-HUN KWAK
IPC分类号： G11C7/00
CPC分类号： G11C7/00 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3436 , G11C16/3454 , G11C2211/5621 , G11C2211/5644 , G11C2211/5648 , H01L27/1157 , H01L27/11582
摘要： A method is provided for operating a nonvolatile memory comprising memory cells stacked on a substrate. The method comprises counting a number of program loops performed in a first program operation of selected memory cells connected to a selected wordline, and controlling an increment of a program voltage between successive program loops of a second program operation of the selected memory cells according to the counted number.
摘要翻译：提供一种用于操作包括堆叠在基板上的存储单元的非易失性存储器的方法。该方法包括对连接到所选字线的选定存储单元的第一编程操作中执行的程序循环数进行计数，以及根据所选择的存储单元的所选存储单元的第二程序操作的连续程序循环之间的程序电压的增量计数

6. 发明申请

US20140047167A1 NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING SUSPENSION OF COMMAND EXECUTION OF THE SAME 有权
标题翻译：非易失性存储器件及其控制暂停执行该命令的方法
公开(公告)号：US20140047167A1
公开(公告)日：2014-02-13
申请号：US13919028
申请日：2013-06-17
申请人： DONG-HUN KWAK
发明人： DONG-HUN KWAK
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G11C16/00 , G11C16/10 , G11C16/24
摘要： A nonvolatile memory device includes a memory cell array, a row decoder, a page buffer, and control logic. The memory cell array includes memory cells connected to word lines and bit lines, the memory cell array being configured to store data. The row decoder is configured to selectively activate a string selection line, a ground selection line, and the word lines of the memory cell array. The page buffer is configured to temporarily store external data and to apply a predetermined voltage to the bit lines according to the stored data during a program operation, and to sense data stored in selected memory cells using the bit lines during a read operation or a verification operation. The control logic is configured to control the row decoder and the page buffer. During execution of commands, when a request to suspend the execution of the commands is retrieved, chip information is backed up to a storage space separate from the control logic.
摘要翻译：非易失性存储器件包括存储单元阵列，行解码器，页缓冲器和控制逻辑。存储单元阵列包括连接到字线和位线的存储器单元，存储单元阵列被配置为存储数据。行解码器被配置为选择性地激活字符串选择线，地选择线和存储单元阵列的字线。页面缓冲器被配置为临时存储外部数据，并且在编程操作期间根据所存储的数据将预定电压施加到位线，并且在读取操作或验证期间使用位线来感测存储在选择的存储器单元中的数据操作。控制逻辑被配置为控制行解码器和页缓冲器。在执行命令期间，当检索到暂停执行命令的请求时，将芯片信息备份到与控制逻辑分开的存储空间。

7. 发明申请

US20130138869A1 NONVOLATILE MEMORY AND MEMORY DEVICE INCLUDING THE SAME 审中-公开
标题翻译：非易失性存储器和存储器件，包括它们
公开(公告)号：US20130138869A1
公开(公告)日：2013-05-30
申请号：US13599076
申请日：2012-08-30
申请人： DONG-HUN KWAK
发明人： DONG-HUN KWAK
IPC分类号： G06F12/02
CPC分类号： G11C16/20 , G06F12/0246 , G06F2212/7207
摘要： A nonvolatile memory has a first memory block including a plurality of sub memory blocks stacked in a direction perpendicular to a substrate, and a second memory block including a plurality of sub memory blocks stacked in a direction perpendicular to the substrate, the second memory block being parallel to the first memory block. Management data unchanged after it is programmed once is stored in at least one sub memory block of the first memory block and main data is stored in sub memory blocks of the second memory block. Meta data may be stored in a sub memory block of the first memory block of in any memory block that does not contain the management data.
摘要翻译：非易失性存储器具有第一存储块，该第一存储块包括在垂直于衬底的方向上堆叠的多个子存储块;以及第二存储块，包括沿与衬底垂直的方向堆叠的多个子存储块，第二存储块为平行于第一个内存块。将其编程一次后不变的管理数据被存储在第一存储器块的至少一个子存储块中，并且主数据被存储在第二存储器块的子存储块中。元数据可以存储在不包含管理数据的任何存储器块中的第一存储器块的子存储器块中。

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