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1. 发明申请

US20160005480A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR OPERATING THE SAME 审中-公开
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US20160005480A1
公开(公告)日：2016-01-07
申请号：US14788990
申请日：2015-07-01
申请人： DONG-GUN KIM , SEONG-JUN AHN , HYUN-SEOK KIM , YANG-WOO ROH , SUNG-HWAN BAE , JONG-YOUL LEE , SE-JEONG JANG
发明人： DONG-GUN KIM , SEONG-JUN AHN , HYUN-SEOK KIM , YANG-WOO ROH , SUNG-HWAN BAE , JONG-YOUL LEE , SE-JEONG JANG
IPC分类号： G11C16/26 , G11C16/04
CPC分类号： G11C16/26 , G11C16/0483 , G11C29/021 , G11C29/025 , G11C29/028 , G11C2029/1202 , G11C2029/4402
摘要： A method for operating the 3D NAND device includes providing first and second dies and initial read levels for the first and second dies, changing the initial read level for the first die to a first read level based on a first offset that is calculated in consideration of elapsed time from a time point when a program for the first die is completed, changing the initial read level for the second die to a second read level based on a second offset that is calculated in consideration of elapsed time from a time point when a program for the second die is completed, and reading data stored in the first die using the first read level or reading data stored in the second die using the second read level.
摘要翻译：一种用于操作3D NAND装置的方法包括：为第一和第二裸片提供第一和第二裸片和初始读取电平，基于考虑到第一裸片的第一偏移量计算出的第一偏移，将第一裸片的初始读取电平改变为第一读取电平从第一管芯的程序完成的时间点起经过的时间，基于考虑到从程序的时间点起的经过时间计算的第二偏移，将第二管芯的初始读取电平改变为第二读取电平并且使用第一读取级别读取存储在第一管芯中的数据，或者使用第二读取级别读取存储在第二管芯中的数据。

2. 发明申请

US20130128663A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR PROGRAMMING NON-VOLATILE MEMORY DEVICE 有权
标题翻译：用于编程非易失性存储器件的非易失性存储器件和方法
公开(公告)号：US20130128663A1
公开(公告)日：2013-05-23
申请号：US13599022
申请日：2012-08-30
申请人： HYUN-SEOK KIM , SUNG-BIN KIM , SUNG-HWAN BAE , JONG-NAM BAEK , SANG-HOON LEE
发明人： HYUN-SEOK KIM , SUNG-BIN KIM , SUNG-HWAN BAE , JONG-NAM BAEK , SANG-HOON LEE
IPC分类号： G11C16/10 , G11C16/04
CPC分类号： G11C16/04 , G11C11/5628 , G11C16/10 , G11C2211/5646
摘要： A method for programming a non-volatile memory device includes: providing a non-volatile memory device including data cells capable of storing N-bit data (N is a natural number) and a monitoring cell capable of monitoring whether the N-bit data has been programmed into the data cells; performing a first programming operation for the data cells while inhibiting programming of the monitoring cell; and performing a second programming operation for the monitoring cell while inhibiting programming of the data cells, wherein the second programming operation is performed differently from the first programming.
摘要翻译：一种用于编程非易失性存储器件的方法包括：提供包括能够存储N位数据（N为自然数）的数据单元的非易失性存储器件以及能够监视N位数据是否具有被编程到数据单元中; 对所述数据单元执行第一编程操作，同时禁止所述监视单元的编程; 以及在禁止所述数据单元的编程的同时对所述监视单元执行第二编程操作，其中所述第二编程操作与所述第一编程不同。

3. 发明申请

US20150301744A1 MEMORY SYSTEM AND METHOD OF OPERATING THE SAME 审中-公开
标题翻译：存储器系统及其操作方法
公开(公告)号：US20150301744A1
公开(公告)日：2015-10-22
申请号：US14601552
申请日：2015-01-21
申请人： HYUN-SEOK KIM , DAE-HO KIM , YONG-GEUN OH , SUNG-JIN MOON
发明人： HYUN-SEOK KIM , DAE-HO KIM , YONG-GEUN OH , SUNG-JIN MOON
IPC分类号： G06F3/06
CPC分类号： G06F3/0653 , G06F3/0616 , G06F3/0634 , G06F3/0659 , G06F3/0679 , G06F3/0688 , G06F11/3058
摘要： A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
摘要翻译：一种操作包括存储器控制器和至少一个非易失性存储器的存储器系统的方法包括在存储器系统中存储从设置在存储器系统外部的主机接收的与温度相关的性能级别信息，设置操作存储器系统的性能水平达到第一性能水平，根据第一性能水平操作存储器控制器和至少一个非易失性存储器件，检测存储器系统的内部温度，以及改变存储器系统的操作性能水平存储器系统到与第一性能级别不同的第二性能级别。操作性能水平由存储器系统的存储器控制器改变，并且改变操作性能水平是基于与温度相关的性能水平信息和检测到的内部温度。

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