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1. 发明授权

US09964562B2 Capacitance type physical quantity sensor 有权
公开(公告)号：US09964562B2
公开(公告)日：2018-05-08
申请号：US14405177
申请日：2013-06-06
申请人： DENSO CORPORATION
发明人： Akira Ogawa
IPC分类号： G01P15/135 , G01P15/13 , G01P15/125 , G01P15/08 , G01P15/18 , G01C19/5747
CPC分类号： G01P15/135 , G01C19/5747 , G01P15/0802 , G01P15/125 , G01P15/13 , G01P15/18 , G01P2015/0882
摘要： A capacitance type physical quantity sensor including a movable electrode formed in a weight part, and a fixed electrode facing the movable electrode is provided. A first movable sensing electrode and a first fixed sensing electrode face each other in a first y direction. A second movable sensing electrode and a second fixed sensing electrode face each other in a second y direction. A first movable damping electrode is located in the middle between two first fixed damping electrodes, faces one of the first fixed damping electrodes in the first y direction and faces the other of the first fixed damping electrodes in the second y direction. A plurality of the first movable damping electrodes are located point-symmetrically with respect to the center of the weight part or line-symmetrically with respect to a center line passing the center in the y direction.

2. 发明授权

US10479675B2 Method of production of semiconductor device having semiconductor layer and support substrate spaced apart by recess 有权
公开(公告)号：US10479675B2
公开(公告)日：2019-11-19
申请号：US15757672
申请日：2016-09-09
申请人： DENSO CORPORATION
发明人： Akira Ogawa , Yoshitaka Noda , Tetsuo Yoshioka , Yuhei Shimizu
IPC分类号： B81C1/00 , G01P15/08 , G01P15/125
摘要： A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.

3. 发明申请

US20150143906A1 CAPACITANCE TYPE PHYSICAL QUANTITY SENSOR 有权
标题翻译：电容式物理量传感器
公开(公告)号：US20150143906A1
公开(公告)日：2015-05-28
申请号：US14405177
申请日：2013-06-06
申请人： DENSO CORPORATION
发明人： Akira Ogawa
IPC分类号： G01P15/125
CPC分类号： G01P15/135 , G01C19/5747 , G01P15/0802 , G01P15/125 , G01P15/13 , G01P15/18 , G01P2015/0882
摘要： A capacitance type physical quantity sensor including a movable electrode formed in a weight part, and a fixed electrode facing the movable electrode is provided. A first movable sensing electrode and a first fixed sensing electrode face each other in a first y direction. A second movable sensing electrode and a second fixed sensing electrode face each other in a second y direction. A first movable damping electrode is located in the middle between two first fixed damping electrodes, faces one of the first fixed damping electrodes in the first y direction and faces the other of the first fixed damping electrodes in the second y direction. A plurality of the first movable damping electrodes are located point-symmetrically with respect to the center of the weight part or line-symmetrically with respect to a center line passing the center in the y direction.
摘要翻译：提供一种电容型物理量传感器，包括形成在重量部分中的可动电极和面对可动电极的固定电极。第一可移动感测电极和第一固定感测电极在第一y方向上彼此面对。第二可移动感测电极和第二固定感测电极在第二y方向上彼此面对。第一可动阻尼电极位于两个第一固定阻尼电极之间的中间，在第一y方向上面向第一固定阻尼电极中的一个并且在第二y方向上面对另一个第一固定阻尼电极。多个第一可动阻尼电极相对于重量部分的中心点对称地相对于通过y方向中心的中心线对称地定位。

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