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1. 发明申请

US20140140659A1 ADIABATIC PLANAR WAVEGUIDE COUPLER TRANSFORMER 有权
标题翻译： ADIABATIC平面波导耦合器变压器
公开(公告)号：US20140140659A1
公开(公告)日：2014-05-22
申请号：US14078168
申请日：2013-11-12
申请人： Demaray LLC
发明人： R. Ernest Demaray
IPC分类号： G02B6/26 , G02B6/132 , F16H25/20
CPC分类号： G02B6/122 , C23C14/044 , C23C14/083 , G02B6/0003 , G02B6/1228 , G02B6/132 , G02B6/14 , G02B6/305 , G02B6/4212 , G02B19/0042 , G02B2006/12147 , Y10T74/18576
摘要： Methods of depositing materials to provide for efficient coupling of light from a first device to a second device are disclosed. In general, these methods include mounting one or more wafers on a rotating table that is continuously rotated under one or more source targets. A process gas can be provided and one or more of the source targets powered while the wafers are biased to deposit optical dielectric films on the one or more wafers. In some embodiments, a shadow mask can be laterally translated across the one or more wafers during deposition. In some embodiments, deposited films can have lateral and/or horizontal variation in index of refraction and/or lateral variation in thickness.
摘要翻译：公开了沉积材料以提供光从第一装置到第二装置的有效耦合的方法。通常，这些方法包括将一个或多个晶片安装在一个或多个源目标下连续旋转的旋转台上。可以提供工艺气体，并且一个或多个源极靶被驱动，同时晶片被偏置以在一个或多个晶片上沉积光学介电膜。在一些实施例中，荫罩可以在沉积期间横跨一个或多个晶片横向平移。在一些实施例中，沉积膜可以具有折射率和/或厚度的横向变化的横向和/或水平变化。

2. 发明申请

US20180045886A1 ADIABATIC PLANAR WAVEGUIDE COUPLER TRANSFORMER 有权
公开(公告)号：US20180045886A1
公开(公告)日：2018-02-15
申请号：US15791001
申请日：2017-10-23
申请人： Demaray, LLC
发明人： R. Ernest Demaray
IPC分类号： G02B6/122 , C23C14/04 , G02B19/00 , G02B6/30 , G02B6/14 , F21V8/00 , C23C14/08 , G02B6/132 , G02B6/42 , G02B6/12
CPC分类号： G02B6/122 , C23C14/044 , C23C14/083 , G02B6/0003 , G02B6/1228 , G02B6/132 , G02B6/14 , G02B6/305 , G02B6/4212 , G02B19/0042 , G02B2006/12147 , Y10T74/18576
摘要： Methods of depositing materials to provide for efficient coupling of light from a first device to a second device are disclosed. In general, these methods include mounting one or more wafers on a rotating table that is continuously rotated under one or more source targets. A process gas can be provided and one or more of the source targets powered while the wafers are biased to deposit optical dielectric films on the one or more wafers. In some embodiments, a shadow mask can be laterally translated across the one or more wafers during deposition. In some embodiments, deposited films can have lateral and/or horizontal variation in index of refraction and/or lateral variation in thickness.

3. 发明申请

US20180331349A1 DEPOSITION OF LiCoO2 审中-公开
公开(公告)号：US20180331349A1
公开(公告)日：2018-11-15
申请号：US15887848
申请日：2018-02-02
申请人： DEMARAY, LLC
发明人： Hongmei Zhang , R. Ernest Demaray
IPC分类号： H01M4/04 , H01M4/66 , C23C14/08 , C23C14/35 , C23C14/58 , H01M10/0585 , H01M10/0562 , H01M10/052 , H01M6/46 , H01M6/18 , H01M4/525 , H01M4/1391 , H01M4/131 , H01M4/02
CPC分类号： H01M4/0426 , C23C14/08 , C23C14/35 , C23C14/5806 , H01M4/0423 , H01M4/0428 , H01M4/0471 , H01M4/131 , H01M4/1391 , H01M4/525 , H01M4/66 , H01M4/661 , H01M4/667 , H01M6/185 , H01M6/188 , H01M6/46 , H01M10/052 , H01M10/0562 , H01M10/0585 , H01M2004/028 , H01M2300/002 , H01M2300/0071 , Y10T29/49115
摘要： In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired or orientation. Some embodiments of the deposition address the need for high rate deposition of LiCoO2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery, Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the LiCoO2 layer.

4. 发明授权

US09989701B2 Adiabatic planar waveguide coupler transformer 有权
公开(公告)号：US09989701B2
公开(公告)日：2018-06-05
申请号：US15791001
申请日：2017-10-23
申请人： Demaray, LLC
发明人： R. Ernest Demaray
IPC分类号： G02B6/26 , G02B6/122 , G02B6/30 , G02B6/14 , C23C14/08 , C23C14/04 , F21V8/00 , G02B6/42 , G02B19/00 , G02B6/132 , G02B6/12
CPC分类号： G02B6/122 , C23C14/044 , C23C14/083 , G02B6/0003 , G02B6/1228 , G02B6/132 , G02B6/14 , G02B6/305 , G02B6/4212 , G02B19/0042 , G02B2006/12147 , Y10T74/18576
摘要： Methods of depositing materials to provide for efficient coupling of light from a first device to a second device are disclosed. In general, these methods include mounting one or more wafers on a rotating table that is continuously rotated under one or more source targets. A process gas can be provided and one or more of the source targets powered while the wafers are biased to deposit optical dielectric films on the one or more wafers. In some embodiments, a shadow mask can be laterally translated across the one or more wafers during deposition. In some embodiments, deposited films can have lateral and/or horizontal variation in index of refraction and/or lateral variation in thickness.

5. 发明授权

US09798082B2 Adiabatic planar waveguide coupler transformer 有权
公开(公告)号：US09798082B2
公开(公告)日：2017-10-24
申请号：US15149492
申请日：2016-05-09
申请人： DEMARAY, LLC
发明人： R. Ernest Demaray
IPC分类号： G02B6/00 , G02B6/122 , G02B6/132 , G02B6/30 , G02B6/14 , C23C14/04 , C23C14/08 , F21V8/00 , G02B6/42 , G02B19/00 , G02B6/12
CPC分类号： G02B6/122 , C23C14/044 , C23C14/083 , G02B6/0003 , G02B6/1228 , G02B6/132 , G02B6/14 , G02B6/305 , G02B6/4212 , G02B19/0042 , G02B2006/12147 , Y10T74/18576
摘要： Methods of depositing materials to provide for efficient coupling of light from a first device to a second device are disclosed. In general, these methods include mounting one or more wafers on a rotating table that is continuously rotated under one or more source targets. A process gas can be provided and one or more of the source targets powered while the wafers are biased to deposit optical dielectric films on the one or more wafers. In some embodiments, a shadow mask can be laterally translated across the one or more wafers during deposition. In some embodiments, deposited films can have lateral and/or horizontal variation in index of refraction and/or lateral variation in thickness.

6. 发明授权

US10818909B2 Energy storage device with a first metal layer formed from a precursor layer upon charge and diffused into a cathode during discharge 有权
公开(公告)号：US10818909B2
公开(公告)日：2020-10-27
申请号：US15590887
申请日：2017-05-09
申请人： DEMARAY, LLC
发明人： R. Ernest Demaray , James Kaschmitter , Pavel Khokhlov
IPC分类号： H01M6/40 , H01M4/04 , H01M4/36 , H01M10/42 , H01M4/66 , H01M4/13 , H01M10/0585 , H01M10/052 , H01M4/139 , C01G23/00 , H01M4/64 , H01M10/04
摘要： Embodiments of the present invention are in the field of materials, apparatus, process, methods, and designs for manufacture of a thin film energy storage devices with a capacity greater then 1 mA-hr-cm−2 including thin film Lithium metal and Li+ ion batteries and capacitors having high energy density and high cycle life due to the incorporation of at least one vacuum thin film with respect to protection and electrical conductivity of the electrodes, and at least one vacuum thin film electrolyte for electrical insulation of the electrodes and ion conduction after assembly for low self discharge and high cycle life battery cells.

7. 发明授权

US10120130B2 Adiabatic planar waveguide coupler transformer 有权
公开(公告)号：US10120130B2
公开(公告)日：2018-11-06
申请号：US15987742
申请日：2018-05-23
申请人： Demaray, LLC
发明人： R. Ernest Demaray
IPC分类号： G02B6/26 , G02B6/122 , G02B6/132 , G02B6/30 , C23C14/08 , G02B19/00 , F21V8/00 , G02B6/14 , G02B6/42 , C23C14/04 , G02B6/12
摘要： A solar cell includes a waveguide core for receiving light, a first layer formed on the waveguide core, a second layer formed on the first layer, a third layer formed on the second layer, first metalization coupled to the first layer, and second metalization coupled to the third layer. The first layer comprises a first optical film which varies in an index of refraction in a lateral direction between a first input end where the light is received and a first output end where the light is emitted. In some embodiments, wherein one or more of the first, second, or third layers has a tapered lateral thickness. In some embodiments, the first, second, and third layers form a PIN device. In some embodiments, the waveguide core has a first index of refraction that is lower than respective indexes of refraction for the first, second, and third layers.

8. 发明申请

US20140332371A1 TRANSPARENT CONDUCTIVE OXIDES 审中-公开
标题翻译：透明导电氧化物
公开(公告)号：US20140332371A1
公开(公告)日：2014-11-13
申请号：US14282832
申请日：2014-05-20
申请人： DEMARAY, LLC
发明人： R. Ernest Demaray , Mukundan Narasimhan
IPC分类号： H01B13/00 , C23C14/00 , C23C14/08
CPC分类号： H01B13/0026 , C23C14/0036 , C23C14/0042 , C23C14/086
摘要： A method of deposition of a transparent conductive film from a metallic target is presented. A method of forming a transparent conductive oxide film according to embodiments of the present invention include depositing the transparent conductive oxide film in a pulsed DC reactive ion process with substrate bias, and controlling at least one process parameter to affect at least one characteristic of the conductive oxide film. The resulting transparent oxide film, which in some embodiments can be an indium-tin oxide film, can exhibit a wide range of material properties depending on variations in process parameters. For example, varying the process parameters can result in a film with a wide range of resistive properties and surface smoothness of the film.
摘要翻译：提出了一种从金属靶沉积透明导电膜的方法。根据本发明的实施方案的形成透明导电氧化物膜的方法包括在具有衬底偏压的脉冲DC反应离子过程中沉积透明导电氧化物膜，并且控制至少一个工艺参数以影响导电的至少一个特性氧化膜。所得到的透明氧化物膜（在一些实施方案中可以是铟锡氧化物膜）可以根据工艺参数的变化显示宽范围的材料性质。例如，改变工艺参数可以产生具有宽范围的电阻性质和膜的表面平滑度的膜。

9. 发明申请

US20180275341A1 ADIABATIC PLANAR WAVEGUIDE COUPLER TRANSFORMER 审中-公开
公开(公告)号：US20180275341A1
公开(公告)日：2018-09-27
申请号：US15987742
申请日：2018-05-23
申请人： Demaray, LLC
发明人： R. Ernest Demaray
IPC分类号： G02B6/122 , G02B6/14 , C23C14/04 , G02B19/00 , G02B6/42 , G02B6/30 , G02B6/132 , F21V8/00 , C23C14/08 , G02B6/12
CPC分类号： G02B6/122 , C23C14/044 , C23C14/083 , G02B6/0003 , G02B6/1228 , G02B6/132 , G02B6/14 , G02B6/305 , G02B6/4212 , G02B19/0042 , G02B2006/12147 , H05K999/99 , Y10T74/18576
摘要： A solar cell includes a waveguide core for receiving light, a first layer formed on the waveguide core, a second layer formed on the first layer, a third layer formed on the second layer, first metallization coupled to the first layer, and second metallization coupled to the third layer. The first layer comprises a first optical film which varies in an index of refraction in a lateral direction between a first input end where the light is received and a first output end where the light is emitted. In some embodiments, wherein one or more of the first, second, or third layers has a tapered lateral thickness. In some embodiments, the first, second, and third layers form a PIN device. In some embodiments, the waveguide core has a first index of refraction that is lower than respective indexes of refraction for the first, second, and third layers.

10. 发明授权

US09366816B2 Adiabatic planar waveguide coupler transformer 有权
标题翻译：绝热平面波导耦合器变压器
公开(公告)号：US09366816B2
公开(公告)日：2016-06-14
申请号：US14078168
申请日：2013-11-12
申请人： DEMARAY LLC
发明人： R. Ernest Demaray
IPC分类号： G02B6/00 , G02B6/132 , G02B6/30 , G02B6/14
CPC分类号： G02B6/122 , C23C14/044 , C23C14/083 , G02B6/0003 , G02B6/1228 , G02B6/132 , G02B6/14 , G02B6/305 , G02B6/4212 , G02B19/0042 , G02B2006/12147 , Y10T74/18576
摘要： Methods of depositing materials to provide for efficient coupling of light from a first device to a second device are disclosed. In general, these methods include mounting one or more wafers on a rotating table that is continuously rotated under one or more source targets. A process gas can be provided and one or more of the source targets powered while the wafers are biased to deposit optical dielectric films on the one or more wafers. In some embodiments, a shadow mask can be laterally translated across the one or more wafers during deposition. In some embodiments, deposited films can have lateral and/or horizontal variation in index of refraction and/or lateral variation in thickness.
摘要翻译：公开了沉积材料以提供光从第一装置到第二装置的有效耦合的方法。通常，这些方法包括将一个或多个晶片安装在一个或多个源目标下连续旋转的旋转台上。可以提供工艺气体，并且一个或多个源极靶被驱动，同时晶片被偏置以在一个或多个晶片上沉积光学介电膜。在一些实施例中，荫罩可以在沉积期间横跨一个或多个晶片横向平移。在一些实施例中，沉积膜可以具有折射率和/或厚度的横向变化的横向和/或水平变化。

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