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1. 发明授权

US10749110B1 Memory stack liner comprising dielectric block layer material 有权
公开(公告)号：US10749110B1
公开(公告)日：2020-08-18
申请号：US15486529
申请日：2017-04-13
申请人： Crossbar, Inc.
发明人： Sundar Narayanan , Zhen Gu , Natividad Vasquez
IPC分类号： H01L45/00
摘要： Two-terminal memory devices can be formed in dielectric material that is electrically insulating and operates as a blocking layer to mitigate diffusion of material from a metal layer. A stack of layers of the two-terminal memory device can be covered with a liner layer that can comprise the dielectric material. Thus, in some implementations, the liner layer and the blocking layer can have a similar etch rate.

2. 发明授权

US10062845B1 Flatness of memory cell surfaces 有权
公开(公告)号：US10062845B1
公开(公告)日：2018-08-28
申请号：US15592982
申请日：2017-05-11
申请人： Crossbar, Inc.
发明人： Harry Yue Gee , Zhen Gu , Natividad Vasquez , Sundar Narayanan
IPC分类号： H01L21/77 , H01L21/8239 , H01L23/00 , H01L45/00 , G11C11/56
CPC分类号： H01L45/1253 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/16
摘要： A two-terminal memory device can be formed according to a manufacturing process that utilizes two distinct chemical-mechanical planarization (CMP) processes for each of bottom electrode/terminal (BE) and the top electrode/terminal (TE). The CMP processes can reduce planar height variations for a top surface of the BE and a top surface of the TE. The CMP processes can reduce height differences between the top surface of the BE and adjacent dielectric surfaces and reduce height differences between the top surface of the TE and adjacent dielectric surfaces.

3. 发明授权

US09412790B1 Scalable RRAM device architecture for a non-volatile memory device and method 有权
标题翻译：用于非易失性存储器件和方法的可扩展RRAM器件架构
公开(公告)号：US09412790B1
公开(公告)日：2016-08-09
申请号：US13705082
申请日：2012-12-04
申请人： Crossbar, Inc.
发明人： Mark Harold Clark , Natividad Vasquez , Steven Maxwell
IPC分类号： H01L21/332 , H01L27/24 , H01L45/00
CPC分类号： H01L27/2481 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1675
摘要： A method for forming a resistive switching device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region. A first wiring structure is formed overlying the first dielectric material. The method forms one or more first structure comprising a junction material overlying the first wiring structure. A second structure comprising a stack of material is formed overlying the first structure. The second structure includes a resistive switching material, an active conductive material overlying the resistive switching material, and a second wiring material overlying the active conductive material. The second structure is configured such that the resistive switching material is free from a coincident vertical sidewall region with the junction material.
摘要翻译：一种形成电阻式开关装置的方法。该方法包括提供具有表面区域并形成覆盖在表面区域上的第一电介质材料的衬底。第一布线结构形成在第一介电材料上。该方法形成包括覆盖在第一布线结构上的连接材料的一个或多个第一结构。包括第一结构的层叠材料的第二结构被形成。第二结构包括电阻开关材料，覆盖电阻开关材料的有源导电材料和覆盖有源导电材料的第二布线材料。第二结构被配置为使得电阻式开关材料与具有连接材料的重合的垂直侧壁区域无关。

4. 发明申请

US20210151671A1 USING ALUMINUM AS ETCH STOP LAYER 有权
公开(公告)号：US20210151671A1
公开(公告)日：2021-05-20
申请号：US17127462
申请日：2020-12-18
申请人： Crossbar, Inc.
发明人： Sundar Narayanan , Natividad Vasquez , Zhen Gu , Yunyu Wang
IPC分类号： H01L45/00
摘要： A two-terminal resistive switching device (TTRSD) such as a non-volatile two-terminal memory device or a volatile two-terminal selector device can be formed according to a manufacturing process. The process can include forming an etch stop layer that is made of aluminum and can include forming a buffer layer below the etch stop layer and/or between the etch stop layer and a top electrode of the TTRSD.

5. 发明申请

US20170365780A1 LINER LAYER FOR DIELECTRIC BLOCK LAYER 审中-公开
公开(公告)号：US20170365780A1
公开(公告)日：2017-12-21
申请号：US15480074
申请日：2017-04-05
申请人： Crossbar, Inc.
发明人： Sundar Narayanan , Zhen Gu , Natividad Vasquez
IPC分类号： H01L45/00
摘要： Two-terminal memory devices can be formed in part within a dielectric material that is electrically insulating and operates as a blocking layer to mitigate diffusion of metal particles employed in integrated circuit fabrication. This dielectric material can be protected from other fabrication processes corrosive to the dielectric material (e.g., CMP, HF clean, etc) by a silicon containing liner. Use of the silicon containing liner can enable a minimum thickness of the dielectric material to be preserved and can facilitate step height differences between adjacent material surfaces that form a two-terminal memory device to be on the order of less than about five angstroms. This small step height difference, particularly when underlying a switching layer of the two-terminal memory device, can yield excellent switching characteristics.

6. 发明授权

US10522754B2 Liner layer for dielectric block layer 有权
公开(公告)号：US10522754B2
公开(公告)日：2019-12-31
申请号：US15480074
申请日：2017-04-05
申请人： Crossbar, Inc.
发明人： Sundar Narayanan , Zhen Gu , Natividad Vasquez
IPC分类号： H01L45/00
摘要： Two-terminal memory devices can be formed in part within a dielectric material that is electrically insulating and operates as a blocking layer to mitigate diffusion of metal particles employed in integrated circuit fabrication. This dielectric material can be protected from other fabrication processes corrosive to the dielectric material (e.g., CMP, HF clean, etc) by a silicon containing liner. Use of the silicon containing liner can enable a minimum thickness of the dielectric material to be preserved and can facilitate step height differences between adjacent material surfaces that form a two-terminal memory device to be on the order of less than about five angstroms. This small step height difference, particularly when underlying a switching layer of the two-terminal memory device, can yield excellent switching characteristics.

7. 发明授权

US10192927B1 Semiconductor device for a non-volatile (NV) resistive memory and array structure for an array of NV resistive memory 有权
公开(公告)号：US10192927B1
公开(公告)日：2019-01-29
申请号：US15206056
申请日：2016-07-08
申请人： Crossbar, Inc.
发明人： Mark Harold Clark , Natividad Vasquez , Steven Maxwell
IPC分类号： H01L29/06 , H01L47/00 , H01L29/76 , H01L27/24 , H01L45/00 , H01L23/528
摘要： A method for forming a resistive switching device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region. A first wiring structure is formed overlying the first dielectric material. The method forms one or more first structure comprising a junction material overlying the first wiring structure. A second structure comprising a stack of material is formed overlying the first structure. The second structure includes a resistive switching material, an active conductive material overlying the resistive switching material, and a second wiring material overlying the active conductive material. The second structure is configured such that the resistive switching material is free from a coincident vertical sidewall region with the junction material.

8. 发明申请

US20170288139A1 USING ALUMINUM AS ETCH STOP LAYER 审中-公开
公开(公告)号：US20170288139A1
公开(公告)日：2017-10-05
申请号：US15468847
申请日：2017-03-24
申请人： Crossbar, Inc.
发明人： Sundar Narayanan , Natividad Vasquez , Zhen Gu , Yunyu Wang
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1233 , H01L45/04 , H01L45/1253 , H01L45/1675
摘要： A two-terminal resistive switching device (TTRSD) such as a non-volatile two-terminal memory device or a volatile two-terminal selector device can be formed according to a manufacturing process. The process can include forming an etch stop layer comprising aluminum and can include forming a buffer layer below the etch stop layer and/or between the etch stop layer and a top electrode of the TTRSD.

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