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1. 发明授权

US4603469A Fabrication of complementary modulation-doped filed effect transistors 失效
标题翻译：互补调制掺杂场效应晶体管的制造
公开(公告)号：US4603469A
公开(公告)日：1986-08-05
申请号：US715698
申请日：1985-03-25
申请人： Craig A. Armiento , Peter E. Norris
发明人： Craig A. Armiento , Peter E. Norris
IPC分类号： H01L21/8252 , H01L21/20 , H01L21/265
CPC分类号： H01L21/8252
摘要： Method of fabricating a monolithic integrated circuit structure incorporating a complementary pair of GaAs/AlGaAs modulation-doped field effect transistors (MODFET's) including providing a substrate of semi-insulating GaAs, depositing an epitaxial layer of undoped AlGaAs on its surface, and ion-implanting a heavily doped N-type donor region and a heavily doped P-type acceptor region in the undoped AlGaAs. A thin spacer layer of undoped AlGaAs is epitaxially deposited on the previously deposited AlGaAs layer, and an epitaxial layer of undoped GaAs is deposited on the spacer layer. First and second gate members which form Schottky barriers with the GaAs are placed on the GaAs layer overlying portions of the N-type donor region and P-type acceptor region, respectively. N-type source and drain zones are formed in the GaAs layer on opposite sides of the first gate member, and P-type source and drain zones are formed in the GaAs layer on opposite sides of the second gate member. A first MODFET is provided by the N-type donor region, the N-type source and drain, the region of undoped GaAs between the source and drain which form a two-dimensional electron gas region, and the first gate member. A second MODFET complementary to the first is provided by the P-type acceptor region, the P-type source and drain, the region of undoped GaAs between the source and drain which form a two-dimensional hole gas region, and the second gate member.
摘要翻译：制造包含互补对的GaAs / AlGaAs调制掺杂场效应晶体管（MODFET）的单片集成电路结构的方法，包括提供半绝缘GaAs的衬底，在其表面上沉积未掺杂的AlGaAs的外延层，以及离子注入重掺杂的N型施主区域和未掺杂的AlGaAs中的重掺杂的P型受主区域。在先前沉积的AlGaAs层上外延沉积未掺杂的AlGaAs的薄间隔层，并且在间隔层上沉积未掺杂的GaAs的外延层。分别在GaAs层上叠置形成肖特基势垒的第一和第二栅极元件，分别覆盖N型施主区域和P型受主区域的部分。在第一栅极部件的相对侧上的GaAs层中形成有N型源极和漏极区域，并且在第二栅极部件的相对侧的GaAs层中形成P型源极和漏极区域。第一MODFET由N型施主区域，N型源极和漏极，源极和漏极之间的未掺杂GaAs的区域形成二维电子气区域和第一栅极部件提供。与第一个互补的第二个MODFET由P型受主区域，P型源极和漏极，源极和漏极之间的未掺杂GaAs的区域形成二维空穴气体区域，第二栅极部件。

2. 发明授权

US08452383B2 Temperature profile mapping and guided thermotherapy 有权
标题翻译：温度剖面图和引导式热疗
公开(公告)号：US08452383B2
公开(公告)日：2013-05-28
申请号：US12920309
申请日：2009-03-02
申请人： Peter E. Norris , Xiao-Li Li , Andrey Vertikov
发明人： Peter E. Norris , Xiao-Li Li , Andrey Vertikov
IPC分类号： A61B6/00
CPC分类号： A61B18/18 , A61B1/00096 , A61B1/00172 , A61B5/0066 , A61B5/0084 , A61B5/015 , A61B5/6852 , A61B17/320068 , A61B18/20
摘要： Techniques, apparatus and systems that use an optical probe head to deliver light to a target and to collect light from the target for imaging and monitoring a target while a separate radiation is applied to treat the target.
摘要翻译：技术，设备和系统，其使用光学探针头将光传送到目标物体并从目标物体收集光线，以便在施加单独的辐射来对目标物进行成像和监测目标物。

3. 发明授权

US5443647A Method and apparatus for depositing a refractory thin film by chemical vapor deposition 失效
$Method and apparatus for depositing a refractory thin film by chemical vapor deposition$
标题翻译：通过化学气相沉积沉积耐火薄膜的方法和装置
公开(公告)号：US5443647A
公开(公告)日：1995-08-22
申请号：US273054
申请日：1994-07-11
申请人： Thomas R. Aucoin , Richard H. Wittstruck , Jing Zhao , Peter A. Zawadzki , William R. Baarck , Peter E. Norris
发明人： Thomas R. Aucoin , Richard H. Wittstruck , Jing Zhao , Peter A. Zawadzki , William R. Baarck , Peter E. Norris
IPC分类号： C23C16/458 , C30B25/12 , C23C16/00
CPC分类号： C23C16/4584 , C30B25/12
摘要： The present invention provides for a chemical vapor deposition reactor cher which is fitted with a rotatable and vertically movable susceptor/wafer carrier. The susceptor/wafer carrier, which is a large diameter disk, provides the reactor with the capability of varying the plasma-substrate distance. As those skilled in the art will appreciate, such a susceptor allows high deposition rates to be achieved for a given power level because the flux of the reactant can be increased due to the high speed rotation which will decrease boundary layer thickness during growth. The ability to adjust the source-substrate distance gives more flexibility than fixed dimensional systems. Further, it allows damage in the thin films to be minimized by simple adjustments to the susceptor/wafer carrier. Because the damage to the thin films is minimized, it makes pulsed operation practical and therefore, the films may be grown in an atomic layer epitaxy mode to produce films of high quality and uniformity.
摘要翻译：本发明提供了一种化学气相沉积反应室，其配有可旋转和垂直移动的基座/晶片载体。作为大直径盘的基座/晶片载体为反应器提供改变等离子体 - 衬底距离的能力。如本领域技术人员将理解的那样，这种基座允许在给定功率水平下实现高沉积速率，因为由于高速旋转可以增加反应物的通量，这将降低生长期间的边界层厚度。调整源 - 衬底距离的能力比固定尺寸系统提供了更大的灵活性。此外，通过对基座/晶片载体的简单调整，可以使薄膜中的损伤最小化。因为对薄膜的损伤被最小化，所以使得脉冲操作变得实用，因此可以以原子层外延模式生长薄膜以产生高质量和均匀的薄膜。

4. 发明授权

US4787696A Mounting apparatus for optical fibers and lasers 失效
标题翻译：光纤和激光器的安装装置
公开(公告)号：US4787696A
公开(公告)日：1988-11-29
申请号：US135808
申请日：1987-12-18
申请人： Peter E. Norris , Robert J. Regan
发明人： Peter E. Norris , Robert J. Regan
IPC分类号： G02B6/42 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/40 , G02B6/36
CPC分类号： H01S5/02252 , G02B6/4202 , G02B6/4234 , G02B6/4249 , H01S5/02284 , H01L2224/48091 , H01S5/0683 , H01S5/4031
摘要： Apparatus for supporting a group of optical fibers in proper alignment with associated laser devices and rear-facet photodetectors. The photodetectors and grooves for supporting the optical fibers are fabricated in a carrier member of device quality silicon. An array of a row of laser devices is moved laterally along a slot in the carrier member transverse to the grooves so as to align each laser device with a groove and with a photodetector. One or more carrier members may be mounted on a supporting structure adapted to receive them.

5. 发明授权

US4600932A Enhanced mobility buried channel transistor structure 失效
标题翻译：增强型移动掩埋沟道晶体管结构
公开(公告)号：US4600932A
公开(公告)日：1986-07-15
申请号：US660175
申请日：1984-10-12
申请人： Peter E. Norris
发明人： Peter E. Norris
IPC分类号： H01L29/778 , H01L29/80
CPC分类号： H01L29/7787
摘要： An enhanced mobility buried channel transistor structure in which the quasi-two-dimensional electron gas (2DEG) which forms the conducting channel in the structure is removed from the proximity of the heterointerface, and is placed in a region remote therefrom. A "tapered" layer of Al.sub.x Ga.sub.1-x As is provided, where x varies from maximum to minimum as the interface with an undoped layer of GaAs is approached.
摘要翻译：一种增强的移动性掩埋沟道晶体管结构，其中在结构中形成导电沟道的准二维电子气（2DEG）从异质界面附近去除，并且被放置在远离其的区域中。提供了Al x Ga 1-x As的“锥形”层，其中x随着与GaAs的未掺杂层的界面接近而从最大到最小变化。

6. 发明授权

US08498681B2 Cross-sectional mapping of spectral absorbance features 有权
标题翻译：光谱吸收特征的截面图
公开(公告)号：US08498681B2
公开(公告)日：2013-07-30
申请号：US11244418
申请日：2005-10-04
申请人： Feiling Wang , Xiao-Li Li , Peter E. Norris
发明人： Feiling Wang , Xiao-Li Li , Peter E. Norris
IPC分类号： A61B5/00
CPC分类号： G01N21/4795 , A61B5/0059 , A61B5/0066 , A61B5/441 , G01J3/02 , G01J3/021 , G01J3/0218 , G01J3/027 , G01J3/10 , G01J3/42 , G01J3/4338 , G01J3/447 , G01J3/453 , G01N21/39
摘要： Designs, implementations, and techniques for optically measuring a sample to obtain spectral absorbance map of the sample. Light at different wavelength bands may be used to detect different absorption features in the sample. Multiple light sources may be used including tunable lasers.
摘要翻译：用于光学测量样品以获得样品的光谱吸收图的设计，实现和技术。可以使用不同波段的光来检测样品中不同的吸收特征。可以使用多个光源，包括可调激光器。

7. 发明申请

US20120268578A1 OPTICAL TISSUE IMAGING BASED ON OPTICAL FREQUENCY DOMAIN IMAGING 有权
标题翻译：基于光学频域成像的光学组织成像
公开(公告)号：US20120268578A1
公开(公告)日：2012-10-25
申请号：US13392816
申请日：2010-08-26
申请人： Andrei Vertikov , Peter E. Norris , Xiao-Li Li
发明人： Andrei Vertikov , Peter E. Norris , Xiao-Li Li
IPC分类号： H04N7/18
CPC分类号： G01B9/02057 , A61B5/0066 , A61B5/6852 , G01B9/02004 , G01B9/0205 , G01B9/02064 , G01B9/0209 , G01B9/02091 , G01B2290/40 , G01B2290/70 , G02B6/241 , G02B6/2706 , G02B6/3624
摘要： Optical devices and techniques for imaging and measuring targeted objects, e.g., tissues.
摘要翻译：用于成像和测量目标物体（例如组织）的光学装置和技术。

8. 发明申请

US20110066035A1 TEMPERATURE PROFILE MAPPING AND GUIDED THERMOTHERAPY 有权
标题翻译：温度曲线绘图和导向热疗
公开(公告)号：US20110066035A1
公开(公告)日：2011-03-17
申请号：US12920309
申请日：2009-03-02
申请人： Peter E. Norris , Xiao-Li Li , Andrey Vertikov
发明人： Peter E. Norris , Xiao-Li Li , Andrey Vertikov
IPC分类号： A61B6/00 , A61B1/06 , A61B17/94 , A61B18/20
CPC分类号： A61B18/18 , A61B1/00096 , A61B1/00172 , A61B5/0066 , A61B5/0084 , A61B5/015 , A61B5/6852 , A61B17/320068 , A61B18/20
摘要： Techniques, apparatus and systems that use an optical probe head to deliver light to a target and to collect light from the target for imaging and monitoring a target while a separate radiation is applied to treat the target.
摘要翻译：技术，设备和系统，其使用光学探针头将光传送到目标物体并从目标物体收集光线，以在施加单独的辐射来对目标物进行成像和监测目标物。

9. 发明授权

US08467858B2 Image-guided thermotherapy based on selective tissue thermal treatment 有权
标题翻译：基于选择性组织热处理的图像引导式热疗
公开(公告)号：US08467858B2
公开(公告)日：2013-06-18
申请号：US12770713
申请日：2010-04-29
申请人： Andrei Vertikov , Peter E. Norris
发明人： Andrei Vertikov , Peter E. Norris
IPC分类号： A61B6/00
CPC分类号： A61N5/00 , A61B5/14532 , A61B5/14558 , A61B18/12 , A61B18/1815 , A61B18/24 , A61B90/30 , A61B90/36 , A61B90/361 , A61B2017/00084 , A61B2018/00023 , A61B2018/1861
摘要： Devices and techniques for thermotherapy based on optical imaging.
摘要翻译：基于光学成像的热疗设备和技术。

10. 发明授权

US07970458B2 Integrated disease diagnosis and treatment system 有权
标题翻译：综合疾病诊治体系
公开(公告)号：US07970458B2
公开(公告)日：2011-06-28
申请号：US11253242
申请日：2005-10-17
申请人： Peter E. Norris , Feiling Wang , Xiao-Li Li
发明人： Peter E. Norris , Feiling Wang , Xiao-Li Li
IPC分类号： A61B6/00
CPC分类号： A61B1/2676 , A61B1/00172 , A61B5/0066 , A61B5/0073 , A61B5/0075 , A61B5/0084 , A61B5/6852 , A61B18/22 , A61B2017/00057 , A61B2018/2065 , A61N5/0601
摘要： Designs, implementations, and techniques for optically measuring a sample and integrated systems that provide CT-scan, optical probing and therapy by electromagnetic radiation treatment (e.g. laser, RF, or microwave). Light at different wavelength bands may be used to detect different absorption features in the sample. Multiple light sources may be used including tunable lasers.
摘要翻译：用于光学测量通过电磁辐射处理（例如激光，RF或微波）提供CT扫描，光学探测和治疗的样品和集成系统的设计，实现和技术。可以使用不同波段的光来检测样品中不同的吸收特征。可以使用多个光源，包括可调激光器。

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