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1. 发明申请

US20120206722A1 High-Resolution Laser Induced Breakdown Spectroscopy Devices and Methods 审中-公开
标题翻译：高分辨率激光诱导分解光谱仪器及方法
公开(公告)号：US20120206722A1
公开(公告)日：2012-08-16
申请号：US13155207
申请日：2011-06-07
申请人： Costas P. Grigoropoulos , David Jen Hwang , Jong Hyun Yoo , Richard E. Russo
发明人： Costas P. Grigoropoulos , David Jen Hwang , Jong Hyun Yoo , Richard E. Russo
IPC分类号： G01J3/30
CPC分类号： G01N21/718
摘要： Provided are laser induced breakdown spectroscopy (LIBS) devices. Embodiments of the devices are configured to obtain a spatial resolution of 10 μm or less. Also provided are methods of using the subject LIBS devices to determine whether one or more elements of interest are present in a target sample. The devices and methods find use in a variety of applications, e.g., submicron and nanoscale chemical analysis applications.
摘要翻译：提供激光诱导击穿光谱（LIBS）器件。这些装置的实施例被配置成获得10μm或更小的空间分辨率。还提供了使用对象LIBS设备来确定目标样本中是否存在感兴趣的一个或多个元素的方法。这些装置和方法可用于各种应用，例如亚微米和纳米级化学分析应用。

2. 发明授权

US07994029B2 Method for patterning crystalline indium tin oxide using femtosecond laser 有权
标题翻译：使用飞秒激光图案化结晶铟锡氧化物的方法
公开(公告)号：US07994029B2
公开(公告)日：2011-08-09
申请号：US12358046
申请日：2009-01-22
申请人： Chung-Wei Cheng , Costas P. Grigoropoulos , David Jen Hwang , Moosung Kim
发明人： Chung-Wei Cheng , Costas P. Grigoropoulos , David Jen Hwang , Moosung Kim
IPC分类号： H01L21/20 , H01L21/36 , H01L21/44
CPC分类号： H01J9/02 , H01J61/06
摘要： A method for patterning crystalline indium tin oxide (ITO) using femtosecond laser is disclosed, which comprises steps of: (a) providing a substrate with an amorphous ITO layer thereon; (b) transferring the amorphous ITO layer in a predetermined area into a crystalline ITO layer by emitting a femtosecond laser beam to the amorphous ITO layer in the predetermined area; and (c) removing the amorphous ITO layer on the substrate using an etching solution.
摘要翻译：公开了一种利用飞秒激光器对结晶铟锡氧化物（ITO）进行构图的方法，其中包括以下步骤：（a）在其上提供非晶ITO层的衬底; （b）通过将飞秒激光束发射到预定区域中的非晶ITO层，将预定区域中的非晶ITO层转移到结晶ITO层中; 和（c）使用蚀刻溶液去除衬底上的非晶ITO层。

3. 发明申请

US20100072645A1 METHOD FOR PRODUCING ACTIVE GLASS NANOPARTICLES BY LASER ABLATION 有权
标题翻译：通过激光雷射生产活性玻璃纳米粒子的方法
公开(公告)号：US20100072645A1
公开(公告)日：2010-03-25
申请号：US12512991
申请日：2009-07-31
申请人： Kuniaki Hiromatsu , David Jen Hwang , Costas P. Grigoropoulos
发明人： Kuniaki Hiromatsu , David Jen Hwang , Costas P. Grigoropoulos
IPC分类号： C09K11/77 , B82B3/00 , B29C35/08
CPC分类号： C03B19/1005 , B82Y30/00 , C01G29/00 , C01P2002/52 , C01P2004/04 , C01P2004/51 , C01P2004/64 , C03C4/12 , C03C12/00 , C03C23/0025 , Y02P40/57 , Y10S977/889
摘要： A method for producing active glass nanoparticles that exhibit upconversion is described. The method employs pulsed-laser ablation of an active glass substrate using, for example, a high repetition rate ultra-short pulse duration laser under normal atmospheric conditions or in a liquid environment.
摘要翻译：描述了显示上转换的活性玻璃纳米颗粒的制备方法。该方法使用例如在正常大气条件下或在液体环境中的高重复率超短脉冲持续时间激光器对活性玻璃衬底进行脉冲激光烧蚀。

4. 发明申请

US20110318695A1 ARBITRARY PATTERN DIRECT NANOSTRUCTURE FABRICATION METHODS AND SYSTEM 有权
公开(公告)号：US20110318695A1
公开(公告)日：2011-12-29
申请号：US13156221
申请日：2011-06-08
申请人： David Jen Hwang , Costas P. Grigoropoulos
发明人： David Jen Hwang , Costas P. Grigoropoulos
IPC分类号： G03F7/20 , G03B27/00 , B82Y30/00
CPC分类号： B82Y30/00 , B82Y40/00 , G03F1/50 , G03F7/70325
摘要： Methods of producing a nanostructure in a target film are provided. The method includes selectively irradiating at least one focusing element of a near-field focusing array that is in near-field focusing relationship with a target film in a manner sufficient to produce a nanostructure from the target film. Also provided are systems for practicing methods of the invention, as well as objects produced thereby.
摘要翻译：提供了在靶膜中制备纳米结构的方法。该方法包括以足以从目标膜产生纳米结构的方式选择性地照射与靶膜近场聚焦关系的近场聚焦阵列的至少一个聚焦元件。还提供了用于实施本发明的方法的系统，以及由此产生的物体。

5. 发明授权

US07985367B2 Method for producing active glass nanoparticles by laser ablation 有权
标题翻译：通过激光烧蚀制备活性玻璃纳米粒子的方法
公开(公告)号：US07985367B2
公开(公告)日：2011-07-26
申请号：US12512991
申请日：2009-07-31
申请人： Kuniaki Hiromatsu , David Jen Hwang , Costas P. Grigoropoulos
发明人： Kuniaki Hiromatsu , David Jen Hwang , Costas P. Grigoropoulos
IPC分类号： B29C35/08
CPC分类号： C03B19/1005 , B82Y30/00 , C01G29/00 , C01P2002/52 , C01P2004/04 , C01P2004/51 , C01P2004/64 , C03C4/12 , C03C12/00 , C03C23/0025 , Y02P40/57 , Y10S977/889
摘要： A method for producing active glass nanoparticles that exhibit upconversion is described. The method employs pulsed-laser ablation of an active glass substrate using, for example, a high repetition rate ultra-short pulse duration laser under normal atmospheric conditions or in a liquid environment.
摘要翻译：描述了显示上转换的活性玻璃纳米颗粒的制备方法。该方法使用例如在正常大气条件下或在液体环境中的高重复率超短脉冲持续时间激光器对活性玻璃衬底进行脉冲激光烧蚀。

6. 发明授权

US08728720B2 Arbitrary pattern direct nanostructure fabrication methods and system 有权
标题翻译：任意模式直接纳米结构制造方法和系统
公开(公告)号：US08728720B2
公开(公告)日：2014-05-20
申请号：US13156221
申请日：2011-06-08
申请人： David Jen Hwang , Costas P. Grigoropoulos
发明人： David Jen Hwang , Costas P. Grigoropoulos
IPC分类号： G03F7/00
CPC分类号： B82Y30/00 , B82Y40/00 , G03F1/50 , G03F7/70325
摘要： Methods of producing a nanostructure in a target film are provided. The method includes selectively irradiating at least one focusing element of a near-field focusing array that is in near-field focusing relationship with a target film in a manner sufficient to produce a nanostructure from the target film. Also provided are systems for practicing methods of the invention, as well as objects produced thereby.
摘要翻译：提供了在靶膜中制备纳米结构的方法。该方法包括以足以从目标膜产生纳米结构的方式选择性地照射与靶膜近场聚焦关系的近场聚焦阵列的至少一个聚焦元件。还提供了用于实施本发明的方法的系统，以及由此产生的物体。

7. 发明授权

US07786024B2 Selective processing of semiconductor nanowires by polarized visible radiation 有权
标题翻译：通过极化可见辐射选择性处理半导体纳米线
公开(公告)号：US07786024B2
公开(公告)日：2010-08-31
申请号：US11936590
申请日：2007-11-07
申请人： David P. Stumbo , Yaoling Pan , Costas P. Grigoropoulos , Nipun Misra
发明人： David P. Stumbo , Yaoling Pan , Costas P. Grigoropoulos , Nipun Misra
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B23K26/073 , B82Y10/00 , H01L21/26513 , H01L21/268 , H01L29/0673 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： Methods, systems, and apparatuses for annealing semiconductor nanowires and for fabricating electrical devices are provided. Nanowires are deposited on a substrate. A plurality of electrodes is formed. The nanowires are in electrical contact with the plurality of electrodes. The nanowires are doped. A polarized laser beam is applied to the nanowires to anneal at least a portion of the nanowires. The nanowires may be aligned substantially parallel to an axis. The laser beam may be polarized in various ways to modify absorption of radiation of the applied laser beam by the nanowires. For example, the laser beam may be polarized in a direction substantially parallel to the axis or substantially perpendicular to the axis to enable different nanowire absorption profiles.
摘要翻译：提供了用于退火半导体纳米线并用于制造电气器件的方法，系统和装置。纳米线沉积在基底上。形成多个电极。纳米线与多个电极电接触。纳米线是掺杂的。将极化激光束施加到纳米线以退火至少一部分纳米线。纳米线可以基本上平行于轴线对准。激光束可以以各种方式被极化，以通过纳米线来改变施加的激光束的辐射的吸收。例如，激光束可以在基本上平行于轴线或基本上垂直于轴线的方向上极化，以实现不同的纳米线吸收曲线。

8. 发明授权

US06635932B2 Thin film crystal growth by laser annealing 失效
公开(公告)号：US06635932B2
公开(公告)日：2003-10-21
申请号：US10213698
申请日：2002-08-06
申请人： Costas P. Grigoropoulos , Mutsuko Hatano , Ming-Hong Lee , Seung-Jae Moon
发明人： Costas P. Grigoropoulos , Mutsuko Hatano , Ming-Hong Lee , Seung-Jae Moon
IPC分类号： H01L2362
CPC分类号： H01L21/02686 , H01L21/2026
摘要： A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature. However, the central part of the liquid pool subjected to continued heating by the first laser beam cools down slowly. Grains nucleated in the periphery of the fully molten spot can therefore grow into the liquid-Si and extend in length until they collide at the center of the first laser beam spot. The first laser beam prolongs the molten Si phase and induces grain growth in a certain direction. The second laser beam triggers nucleation and controls grain location leading to subsequent lateral grain growth.

9. 发明授权

US08580130B2 Laser-assisted nanomaterial deposition, nanomanufacturing, in situ monitoring and associated apparatus 有权
标题翻译：激光辅助纳米材料沉积，纳米制造，原位监测及相关设备
公开(公告)号：US08580130B2
公开(公告)日：2013-11-12
申请号：US12743550
申请日：2008-12-16
申请人： Samuel S. Mao , Costas P. Grigoropoulos , David J. Hwang , Andrew M. Minor
发明人： Samuel S. Mao , Costas P. Grigoropoulos , David J. Hwang , Andrew M. Minor
IPC分类号： B44C1/22
CPC分类号： C23C16/047 , G01Q80/00 , G03F1/72 , G03F1/82 , G03F7/0002 , Y10T156/1158
摘要： Laser-assisted apparatus and methods for performing nanoscale material processing, including nanodeposition of materials, can be controlled very precisely to yield both simple and complex structures with sizes less than 100 nm. Optical or thermal energy in the near field of a photon (laser) pulse is used to fabricate submicron and nanometer structures on a substrate. A wide variety of laser material processing techniques can be adapted for use including, subtractive (e.g., ablation, machining or chemical etching), additive (e.g., chemical vapor deposition, selective self-assembly), and modification (e.g., phase transformation, doping) processes. Additionally, the apparatus can be integrated into imaging instruments, such as SEM and TEM, to allow for real-time imaging of the material processing.
摘要翻译：可以非常精确地控制用于进行纳米尺度材料加工的激光辅助装置和方法，包括材料的纳米沉积，以产生尺寸小于100nm的简单和复杂结构。在光子（激光）脉冲的近场中的光学或热能用于在衬底上制造亚微米和纳米结构。各种激光材料加工技术可以适用于包括减法（例如，消融，机械加工或化学蚀刻），添加剂（例如化学气相沉积，选择性自组装）和修饰（例如相变，掺杂）进程。此外，该装置可以集成到诸如SEM和TEM的成像仪器中，以允许材料处理的实时成像。

10. 发明授权

US06451631B1 Thin film crystal growth by laser annealing 失效
标题翻译：薄膜晶体通过激光退火生长
公开(公告)号：US06451631B1
公开(公告)日：2002-09-17
申请号：US09637325
申请日：2000-08-10
申请人： Costas P. Grigoropoulos , Mutsuko Hatano , Ming-Hong Lee , Seung-Jae Moon
发明人： Costas P. Grigoropoulos , Mutsuko Hatano , Ming-Hong Lee , Seung-Jae Moon
IPC分类号： H01L2100
CPC分类号： H01L21/02686 , H01L21/2026
摘要： A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature. However, the central part of the liquid pool subjected to continued heating by the first laser beam cools down slowly. Grains nucleated in the periphery of the fully molten spot can therefore grow into the liquid-Si and extend in length until they collide at the center of the first laser beam spot. The first laser beam prolongs the molten Si phase and induces grain growth in a certain direction. The second laser beam triggers nucleation and controls grain location leading to subsequent lateral grain growth.
摘要翻译：通过施加能量束的能量将材料层从第一状态转变到第二状态。例如，大的方向和位置控制的p-Si晶粒生长利用来自叠加激光照射的非晶硅的再结晶。叠加的激光照射控制确定所得晶体结构的冷却和凝固过程。具体地，使用第一脉冲持续时间的第一激光束来熔化非晶硅（a-Si）膜并产生温度梯度。在初始延迟之后，具有较短脉冲持续时间的第二激光束与第一激光束重叠。当由第二激光束照射a-Si时，被第一激光束加热的区域完全熔化。当液体Si温度下降到成核温度以下时，过冷的液态Si开始自发成核。然而，经受第一激光束的持续加热的液池的中心部分缓慢地冷却。因此，在完全熔融点的周边成核的晶粒可以生长成液态Si，并且长度延伸直到它们在第一激光束点的中心碰撞。第一激光束延长了熔融的Si相并在一定方向上引起晶粒生长。第二激光束触发成核并控制晶粒位置，导致随后的横向晶粒生长。

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