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    • 2. 发明申请
    • METHOD FOR CHEMICAL SENSOR FABRICATION AND RELATED SENSOR
    • 化学传感器制造方法及相关传感器
    • US20090193874A1
    • 2009-08-06
    • US12362636
    • 2009-01-30
    • Cornel CobianuBogdan-Catalin Serban
    • Cornel CobianuBogdan-Catalin Serban
    • G01N7/00H01L41/22
    • G01N29/022B81B2201/0214B81C1/00206B81C1/00325B81C2203/0109B81C2203/019G01N29/2437G01N2291/0255G01N2291/0423Y10T29/42Y10T29/49002
    • A method includes forming a hole in a first wafer and forming a sensor structure in or on a second wafer. The second wafer includes a piezoelectric material. The method also includes bonding the first wafer and the second wafer, where the sensor structure is located between the wafers. The method further includes forming a sensing layer by depositing material between the wafers through the hole in the first wafer. The sensing layer could be formed by depositing a sensing layer material on the second wafer using direct printing. Also, the hole through the first wafer could be formed using ultrasonic milling, micro-drilling, laser drilling, wet etching, and/or plasma etching. A spacer material could be used to bond the wafers together, such as frit glass paste or an organic adhesive. Trenches could be formed in the first wafer to facilitate easier separation of multiple sensors.
    • 一种方法包括在第一晶片中形成孔并在第二晶片上形成传感器结构。 第二晶片包括压电材料。 该方法还包括将第一晶片和第二晶片接合,其中传感器结构位于晶片之间。 该方法还包括通过在第一晶片中的孔通过在晶​​片之间沉积材料来形成感测层。 感测层可以通过使用直接印刷在第二晶片上沉积感测层材料来形成。 此外,穿过第一晶片的孔可以使用超声波铣削,微钻孔,激光钻孔,湿蚀刻和/或等离子体蚀刻来形成。 可以使用间隔物材料将晶片粘合在一起,例如熔结玻璃浆料或有机粘合剂。 可以在第一晶片中形成沟槽,以便于更容易地分离多个传感器。
    • 4. 发明授权
    • Method for chemical sensor fabrication and related sensor
    • 化学传感器制造方法及相关传感器
    • US08372674B2
    • 2013-02-12
    • US12362636
    • 2009-01-30
    • Cornel CobianuBogdan-Catalin Serban
    • Cornel CobianuBogdan-Catalin Serban
    • H01L21/00
    • G01N29/022B81B2201/0214B81C1/00206B81C1/00325B81C2203/0109B81C2203/019G01N29/2437G01N2291/0255G01N2291/0423Y10T29/42Y10T29/49002
    • A method includes forming a hole in a first wafer and forming a sensor structure in or on a second wafer. The second wafer includes a piezoelectric material. The method also includes bonding the first wafer and the second wafer, where the sensor structure is located between the wafers. The method further includes forming a sensing layer by depositing material between the wafers through the hole in the first wafer. The sensing layer could be formed by depositing a sensing layer material on the second wafer using direct printing. Also, the hole through the first wafer could be formed using ultrasonic milling, micro-drilling, laser drilling, wet etching, and/or plasma etching. A spacer material could be used to bond the wafers together, such as frit glass paste or an organic adhesive. Trenches could be formed in the first wafer to facilitate easier separation of multiple sensors.
    • 一种方法包括在第一晶片中形成孔并在第二晶片上形成传感器结构。 第二晶片包括压电材料。 该方法还包括将第一晶片和第二晶片接合,其中传感器结构位于晶片之间。 该方法还包括通过在第一晶片中的孔通过在晶​​片之间沉积材料来形成感测层。 感测层可以通过使用直接印刷在第二晶片上沉积感测层材料来形成。 此外,穿过第一晶片的孔可以使用超声波铣削,微钻孔,激光钻孔,湿蚀刻和/或等离子体蚀刻来形成。 可以使用间隔物材料将晶片粘合在一起,例如熔结玻璃浆料或有机粘合剂。 可以在第一晶片中形成沟槽,以便于更容易地分离多个传感器。